A survey of carbon nanotube interconnects for energy efficient integrated circuits

This article is a review of the state-of-art carbon nanotube interconnects for Silicon application with respect to the recent literature. Amongst all the research on carbon nanotube interconnects, those discussed here cover 1) challenges with current copper interconnects, 2) process & growth of carbon nanotube interconnects compatible with back-end-of-line integration, and 3) modeling and simulation for circuit-level benchmarking and performance prediction. The focus is on the evolution of carbon nanotube interconnects from the process, theoretical modeling, and experimental characterization to on-chip interconnect applications. We provide an overview of the current advancements on carbon nanotube interconnects and also regarding the prospects for designing energy efficient integrated circuits. Each selected category is presented in an accessible manner aiming to serve as a survey and informative cornerstone on carbon nanotube interconnects relevant to students and scientists belonging to a range of fields from physics, processing to circuit design

Carbon Nanotube Interconnects for End-of-Roadmap Semiconductor Technology Nodes

Advances in semiconductor technology due to aggressive downward scaling of on-chip feature sizes have led to rapid rises in resistivity and current density of interconnect conductors. As a result, current interconnect materials, Cu and W, are subject to performance and reliability constraints approaching or exceeding their physical limits. Therefore, alternative materials such as nanocarbons, metal silicides, and Ag nanowires are actively considered as potential replacements to meet such constraints. Among nanocarbons, carbon nanotube (CNT) is among the leading replacement candidate for on-chip interconnect vias due to its high aspect-ratio nanostructure and superior currentcarrying capacity to those of Cu, W, and other potential candidates. However, contact resistance of CNT with metal is a major bottleneck in device functionalization. To meet the challenge posed by contact resistance, several techniques are designed and implemented. First, the via fabrication and CNT growth processes are developed to increase the CNT packing density inside via and to ensure no CNT growth on via sidewalls. CNT vias with cross-sections down to 40 nm 40 nm are fabricated, which have linewidths similar to those used for on-chip interconnects in current integrated circuit manufacturing technology nodes. Then the via top contact is metallized to increase the total CNT area interfacing with the contact metal and to improve the contact quality and reproducibility. Current-voltage characteristics of individual fabricated CNT vias are measured using a nanoprober and contact resistance is extracted with a first-reported contact resistance extraction scheme for 40 nm linewidth. Based on results for 40 nm and 60 nm top-contact metallized CNT vias, we demonstrate that not only are their current-carrying capacities two orders of magnitude higher than their Cu and W counterparts, they are enhanced by reduced via resistance due to contact engineering. While the current-carrying capacities well exceed those projected for end-of-roadmap technology nodes, the via resistances remain a challenge to replace Cu and W, though our results suggest that further innovations in contact engineering could begin to overcome such challenge

Fundamental Characterization of Low Dimensional Carbon Nanomaterials for 3D Electronics Packaging

Transistor miniaturization has over the last half century paved the way for higher value electronics every year along an exponential pace known as \u27Moore\u27s law\u27. Now, as the industry is reaching transistor features that no longer makes economic sense, this way of developing integrated circuits (ICs) is coming to its definitive end. As a solution to this problem, the industry is moving toward higher hanging fruits that can enable larger sets of functionalities and ensuring a sustained performance increase to continue delivering more cost-effective ICs every product cycle. These design strategies beyond Moore\u27s law put emphasis on 3D stacking and heterogeneous integration, which if implemented correctly, will deliver a continued development of ICs for a foreseeable future. However, this way of building semiconductor systems does bring new issues to the table as this generation of devices will place additional demands on materials to be successful. The international roadmap of devices and systems (IRDS) highlights the need for improved materials to remove bottlenecks in contemporary as well as future systems in terms of thermal dissipation and interconnect performance. For this very purpose, low dimensional carbon nanomaterials such as graphene and carbon nanotubes (CNTs) are suggested as potential candidates due to their superior thermal, electrical and mechanical properties. Therefore, a successful implementation of these materials will ensure a continued performance to cost development of IC devices.This thesis presents a research study on some fundamental materials growth and reliability aspects of low dimensional carbon based thermal interface materials (TIMs) and interconnects for electronics packaging applications. Novel TIMs and interconnects based on CNT arrays and graphene are fabricated and investigated for their thermal resistance contributions as well electrical performance. The materials are studied and optimized with the support of chemical and structural characterization. Furthermore, a reliability study was performed which found delamination issues in CNT array TIMs due to high strains from thermal expansion mismatches. This study concludes that CNT length is an important factor when designing CNT based systems and the results show that by further interface engineering, reliability can be substantially improved with maintained thermal dissipation and electrical performance. Additionally, a heat treatment study was made that enables improvement of the bulk crystallinity of the materials which will enable even better performance in future applications

Preparation and characterization of Carbon Nanotube based vertical interconnections for integrated circuits: Preparation and characterization of Carbon Nanotube based verticalinterconnections for integrated circuits

(ULSI) causes an increase of the resistance of the wiring system by increased scattering of electrons at side walls and grain boundaries in the state of the art Cu technology, which increases the RC delay of the interconnect system and thus degrades the performance of the device. The outstanding properties of carbon nanotubes (CNT) such as a large mean free path, a high thermal conductance and a large resistance against electromigration make them an ideal candidate to replace Cu in future feature nodes. The present thesis contributes to the preparation and properties of CNT based vertical interconnections (vias). In addition, all processes applied during the fabrication are compatible to ULSI and an interface between CNT based vias and a Cu metallization is studied. The methodology for the evaluation of CNT based vias is improved; it is highlighted that by measuring the resistance of one multiwall CNT and taking into account the CNT density, the performance of the CNT based vias can be predicted accurately. This provides the means for a systematic evaluation of different integration procedures and materials. The lowest contact resistance is obtained for carbide forming metals, as long as oxidation during the integration is avoided. Even though metal-nitrides exhibit an enhanced contact resistance, they are recommended to be used at the bottom metallization in order to minimize the oxidation of the metal-CNT contact during subsequent processing steps. Overall a ranking for the materials from the lowest to the highest contact resistance is obtained: Ta < Ti < TaN < TiN « TiO2 « Ta2O5 Furthermore the impact of post CNT growth procedures as chemical mechanical planarization, HF treatment and annealing procedures after the CNT based via fabrication are evaluated. The conductance of the incorporated CNTs and the applicable electrical transport regime relative to the CNT quality and the CNT length is discussed. In addition, a strong correlation between the temperature coefficient of resistance and the initial resistance of the CNT based vias at room temperature has been observed.Die kontinuierliche Miniaturisierung der charakteristischen Abmessungen in hochintegrierten Schaltungen (ULSI) verursacht einen Anstieg des Widerstandes im Zuleitungssystem aufgrund der erhöhten Streuung von Elektronen an Seitenwänden und Korngrenzen in der Cu-Technologie, wodurch die Verzögerungszeit des Zuleitungssystems ansteigt. Die herausragenden Eigenschaften von Kohlenstoffnanoröhren (CNT), wie eine große mittlere freie Weglänge, hohe thermische Leitfähigkeit und eine starke Resistenz gegenüber Elektromigration machen diese zu einem idealen Kandidaten, um Cu in zukünftigen Technologiegenerationen zu ersetzen. Die vorliegende Arbeit beschreibt die Herstellung und daraus resultierenden Eigenschaften von Zwischenebenenkontakten (Vias) basierend auf CNTs. Alle verwendeten Prozessierungsschritte sind kompatibel mit der Herstellung von hochintegrierten Schaltkreisen und eine Schnittstelle zwischen den CNT Vias und einer Cu-Metallisierung ist vorhanden. Insbesondere das Verfahren zur Evaluierung von CNT Vias wurde durch den Einsatz verschiedener Methoden verbessert. Insbesondere soll hervorgehoben werden, dass durch die Messung des Widerstandes eines einzelnen CNTs, bei bekannter CNT Dichte, der Via Widerstand sehr genau vorausgesagt werden kann. Dies ermöglicht eine systematische Untersuchung des Einflusses der verschiedenen Prozessschritte und der darin verwendeten Materialien auf den Via Widerstand. Der niedrigste Kontaktwiderstand wird für Karbidformierende Metalle erreicht, solange Oxidationsprozesse ausgeschlossen werden können. Obwohl Metallnitride einen höheren Kontaktwiderstand aufweisen, sind diese für die Unterseitenmetallisierung zu empfehlen, da dadurch die Oxidation der leitfähigen Schicht minimiert wird. Insgesamt kann eine Reihenfolge beginnend mit dem niedrigsten zum höchsten Kontaktwiderstand aufgestellt werden: Ta < Ti < TaN < TiN « TiO2 « Ta2O5 Desweiteren wurde der Einfluss von Verfahren nach dem CNTWachstum wie die chemischmechanische Planarisierung, eine HF Behandlung und einer Temperaturbehandlung evaluiert, sowie deren Einfluss auf die elektrischen Parameter des Vias untersucht. Die Leitfähigkeit der integrierten CNTs und die daraus resultierenden elektrischen Transporteigenschaften in Abhängigkeit der CNT Qualität und Länge werden besprochen. Ebenso wird die starke Korrelation zwischen dem Temperaturkoeffizienten des elektrischen Widerstandes und des Ausgangswiderstandes der CNT basierten Vias bei Raumtemperatur diskutiert

Carbonaceous materials for their use as aircraft lightning strike protection

The main motivation behind this work, was to substitute the current technology used as lightning strike protection in the aircraft industry. This protection is composed of metallic meshes of foils, normally bronze, copper, and in some exceptional cases, for example in some fairings, aluminum in which cases, Glass Fiber Reinforced Polymer (GFRP) material will be added to avoid corrosion that direct contact between the Carbon Fiber (from the structural Carbon Fiber Reinforced Polymer material (CFRP)) and the Al might cause [1]. The bronze mesh adapts better to parts with complex geometries and is cheaper than cooper materials, however, its electrical conductivity is lower than the ones exhibited by copper meshes or foils. For those areas that need, not only Lightning Strike Protection (LSP), but also electromagnetic shielding, copper mesh or foils will be used such as Expanded Copper Foils (ECF), which is an epoxy pre-impregnated expanded copper foil that allows automated placement on the CFRP part.Programa de Doctorado en Ciencia e Ingeniería de Materiales por la Universidad Carlos III de MadridPresidente: Mauricio Terrones - Secretario: Francisco Javier Velasco Lopez - Vocal: José Sánchez Góme

Mechanocapillary Forming of Filamentary Materials.

The hierarchical structure and organization of filaments within natural materials determine their collective chemical and physical functionalities. Synthetic nanoscale filaments such as carbon nanotubes (CNTs) are known for their outstanding properties including high stiffness and strength at low density, and high electrical conductivity and current carrying capacity. Ordered assemblies of densely packed CNTs are therefore expected to enable the synthesis of new materials having outstanding multifunctional performance. However, current methods of CNT synthesis have inadequate control of quality, density and order. In pursuit of these needs, a new technique called capillary forming is used to manipulate vertically aligned (VA-) CNTs, and to enable their integration in applications ranging from microsystems to macroscale functional films. Capillary forming relies on shape-directed capillary rise during solvent condensation; followed by evaporation-induced shrinkage. Three-dimensional geometric transformations result from the heterogeneous strain distribution within the microstructures during the vapor-liquid-solid interface shrinkage. A portfolio of microscale CNT assemblies with highly ordered internal structure and freeform geometries including straight, bent, folded and helical profiles, are fabricated using this technique. The mechanical stiffness and electrical conductivity of capillary formed CNT micropillars are 5 GPa and 104 S/m respectively. These values are at least hundred-fold higher than as-grown CNT properties, and exceed the properties of typical microfabrication polymers. Responsive CNT-hydrogel composites are prototyped by combining isotropic moisture-induced swelling of the hydrogel with the anisotropic stiffness of CNTs to induce reversible self-directed shape changes of up to 30% stroke. Centimeter scale sheets are fabricated by mechanical rolling and capillary assisted joining of CNTs. The mechanical stiffness, strength and electrical conductivity of CNT sheets are comparable to those of continuous CNT microstructures; and can be tuned by engineering the morphology of the CNT joints. Finally, the applicability of mechanocapillary forming to other nanoscale filaments is demonstrated using silicon nanowires synthesized by metal assisted chemical etching. Further work using the methods developed in this dissertation could enable applications such as directional liquid transport, adhesives, and biosensors; toward an end goal of creating multifunctional surfaces having arbitrary structural, interfacial, and optical responsiveness.Ph.D.Mechanical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91466/1/stawfick_1.pdfhttp://deepblue.lib.umich.edu/bitstream/2027.42/91466/2/stawfick_2.pd

Exploration of Metal Composites and Carbon Nanotubes for Thermal Interfaces

Modern microelectronics are perpetually pushing against limitations caused by inadequate heat dissipation. One of the critical bottlenecks is at the interfaces between different materials and components. Thermal interface materials (TIM) are used to improve the heat transfer at these interfaces, and to improve TIMs is one of the critical research areas in order to reduce the total thermal resistance for electronics systems.A TIM requires both high thermal conductivity, ability to conform to mating surfaces, and the ability to absorb stress from thermal expansion mismatch during thermal cycling. Solder based TIMs utilize solder to form a strong connection between the mating surfaces with high thermal conductivity, but their stiffness prevents adequate absorption of thermal expansion mismatch. In this thesis, the solder is combined with a fiber network phase, which modifies the mechanical properties, while maintaining the continuous heat paths within the solder. This solder matrix fiber network composite TIM allows for the tailoring of the mechanical properties of solder based TIM while retaining thermal performance. Another promising TIM candidate is based on arrays of vertically aligned CNTs. CNT arrays can achieve good thermal performance, but the reliability had not previously been investigated experimentally. A thorough investigation of the reliability of CNT array TIM revealed that reliability is not guaranteed, but requires careful matching between CNT array height, bonding method and substrate configuration.Furthermore, we developed a new joule self-heating chemical vapor deposition (CVD) method for the synthesis of double-sided CNT arrays on thin foils, which can be used both as TIM or as supercapacitor electrodes. Double-sided arrays are challenging with conventional CNT array synthesis methods, but the Joule heating CVD method allows for rapid, scalable and uniform synthesis of large area double-sided arrays. Finally, this method was used to study the effect of heat treatment of CNT arrays on graphite. The heat treatment serves to simultaneously improve the CNT crystallinity, eliminate catalyst residues, and form a seamless connection between CNT arrays and graphite

Mechanical analysis of a growing carbon nanotube forest

Carbon nanotube forests are vertically oriented and entangled tubes that grow normal to a given substrate. The excellent thermal, mechanical, and electronic properties of individual carbon nanotubes motivates their study. Herein, two and three dimensional finite element models are developed to perform a mechanical analysis and parametric growth studies of actively growing carbon nanotube forests. Nanotube growth rate distribution, orientation angle, and diameter are varied to examine their effects on the resulting forest morphology. Individual carbon nanotubes are modeled as linear frame elements interconnected at adjacent nodes. The van der Waals interaction between carbon nanotubes is modeled as bar elements. The fastest-growing carbon nanotube in the forest are restricted by surrounding tubes, thereby generating a compressive force that is transmitted to the base of the carbon nanotube. The slowest growing carbon nanotube transmits tensile forces. The simulated forest morphology exhibits a strong consistency with observed carbon nanotube forests whilst maintaining mechanical phenomena like buckling, translation and rotation as seen in electron micrographs. This modeling approach is a paradigm shift in the study of carbon nanotube forest growth mechanics and establishes a framework for further thermal and electrical analyses

A vector light sensor for 3D proximity applications: Designs, materials, and applications

In this thesis, a three-dimensional design of a vector light sensor for angular proximity detection applications is realized. 3D printed mesa pyramid designs, along with commercial photodiodes, were used as a prototype for the experimental verification of single-pixel and two-pixel systems. The operation principles, microfabrication details, and experimental verification of micro-sized mesa and CMOS-compatible inverse vector light pixels in silicon are presented, where p-n junctions are created on pyramid’s facets as photodiodes. The one-pixel system allows for angular estimations, providing spatial proximity of incident light in 2D and 3D. A two-pixel system was further demonstrated to have a wider-angle detection. Multilayered carbon nanotubes, graphene, and vanadium oxide thin films as well as carbon nanoparticles-based composites were studied along with cost effective deposition processes to incorporate these films onto 3D mesa structures. Combining such design and materials optimizations produces sensors with a unique design, simple fabrication process, and readout integrated circuits’ compatibility. Finally, an approach to utilize such sensors in smart energy system applications as solar trackers, for automated power generation optimizations, is explored. However, integration optimizations in complementary-Si PV solar modules were first required. In this multi-step approach, custom composite materials are utilized to significantly enhance the reliability in bifacial silicon PV solar modules. Thermal measurements and process optimizations in the development of imec’s novel interconnection technology in solar applications are discussed. The interconnection technology is used to improve solar modules’ performance and enhance the connectivity between modules’ cells and components. This essential precursor allows for the effective powering and consistent operations of standalone module-associated components, such as the solar tracker and Internet of Things sensing devices, typically used in remote monitoring of modules’ performance or smart energy systems. Such integrations and optimizations in the interconnection technology improve solar modules’ performance and reliability, while further reducing materials and production costs. Such advantages further promote solar (Si) PV as a continuously evolving renewable energy source that is compatible with new waves of smart city technology and systems

DEVELOPMENT OF METAL MATRIX COMPOSITE GRIDLINES FOR SPACE PHOTOVOLTAICS

Space vehicles today are primarily powered by multi-junction photovoltaic cells due to their high efficiency and high radiation hardness in the space environment. While multi-junction solar cells provide high efficiency, microcracks develop in the crystalline semiconductor due to a variety of reasons, including: growth defects, film stress due to lattice constant mismatch, and external mechanical stresses introduced during shipping, installation, and operation. These microcracks have the tendency to propagate through the different layers of the semiconductor reaching the metal gridlines of the cell, resulting in electrically isolated areas from the busbar region, ultimately lowering the power output of the cell and potentially reducing the lifetime of the space mission. Pre-launch inspection are often expensive and difficult to perform, in which individual cells and entire modules must be replaced. In many cases, such microcracks are difficult to examine even with a thorough inspection. While repairs are possible pre-launch of the space vehicle, and even to some extent in low-to-earth missions, they are virtually impossible for deep space missions, therefore, efforts to mitigate the effects of these microcracks have substantial impact on the cell performance and overall success of the space mission. In this effort, we have investigated the use of multi-walled carbon nanotubes as mechanical reinforcement to the metal gridlines capable of bridging gaps generated in the underlying semiconductor while providing a redundant electrical conduction pathway. The carbon nanotubes are embedded in a silver matrix to create a metal matrix composite, which are later integrated onto commercial triple-junction solar cells