A fast and energy-efficient two-stage level shifter using the controlled Wilson current mirror

Multiple voltage domains are commonplace in modern SoCs and level shifter (LS) circuits allow different voltage domains to be interfaced with each other. As the reduced supply voltages are extensively used in digital blocks for low-power operation, the conversion of sub-threshold voltage levels to full VDD signal becomes a particular problem. In this paper we present a new LS structure for the fast and energy-efficient conversion of extremely low voltage levels. The proposed LS is a two-stage structure consisting of a controlled Wilson current mirror and eliminates the negative feedback mechanism. Inverted output of the second stage controls the current through the first stage. If the input signal is logical high (VDDL) then the circuit will produce high output (VDDH) and the first stage is prepared to conduct the current for logical 0 input (0V). This improves the slew rate problem and enables fast and energy-efficient operation. Considering process corners at a 90-nm technology node, the proposed design reliably converts 150-mV input signal into 1 V output signal. Post-layout results show that the proposed LS exhibits a propagation delay of 16 ns, a total energy per transition of only 79 fJ, and a static power dissipation of 16.6 nW for a 200 mV input signal at 1-MHz, while loading 100 fF of capacitive load

Mixed Tunnel-FET/MOSFET Level Shifters: A New Proposal to Extend the Tunnel-FET Application Domain

In this paper, we identify the level shifter (LS) for voltage up-conversion from the ultralow-voltage regime as a key application domain of tunnel FETs (TFETs).We propose a mixed TFET\u2013MOSFET LS design methodology, which exploits the complementary characteristics of TFET and MOSFET devices. Simulation results show that the hybrid LS exhibits superior dynamic performance at the same static power consumption compared with the conventional MOSFET and pure TFET solutions. The advantage of the mixed design with respect to the conventional MOSFET approach is emphasized when lower voltage signals have to be up-converted, reaching an improvement of the energy-delay product up to three decades. When compared with the full MOSFET design, the mixed TFET\u2013MOSFET solution appears to be less sensitive toward threshold voltage variations in terms of dynamic figures of merit, at the expense of higher leakage variability. Similar results are obtained for four different LS topologies, thus indicating that the hybrid TFET\u2013MOSFET approach offers intrinsic advantages in the design of LS for voltage up-conversion from the ultralow-voltage regime compared with the conventional MOSFET and pure TFET solutions

Adaptive High Voltage Pulse Signal Generator Circuit Design

Ground Penetrating Radar (GPR) is widely used in area of geologic exploration, hidden stationary subject detection and quality inspection on various infrastructures. The pulse generator, which offers very accurate timing information, is the most cardinal component in GPR systems. It is easy to design a pulse generator which produces pulse with pre-settled peak value and pulse width in nanosecond scale. However, since the system is working in complicated environments, various pulses in different pulse widths and amplitudes are needed. In this background, pulse generators in tunability and stability are precious in value and universal in use. Indeed, a few adaptive high voltage pulse signal generators in UWB circuit level have been developed. A pulse generator with tunable pulse width and controllable voltage amplitude is proposed under these demands. The proposed circuit implementation combines System-On-Chip (SOC) design with Printed Circuit Board (PCB) design because we intend to realize modulation separately. We also design an easy input console named Binary Input Array in the research to realize control simplicity. Furthermore, we employ mathematical model to optimize parameters in each component in order to have an improved performance. Simulation data are obtained from Cadence Virtuoso and OrCAD Capture

유전알고리즘 및 강화학습을 사용한 고속 회로 설계 자동화 프레임워크

학위논문(석사) -- 서울대학교대학원 : 융합과학기술대학원 지능정보융합학과, 2022.2. 전동석.Although design automation is a key enabler of modern large-scale digital systems, automating the transistor-level circuit design process still remains a challenge. Some recent works suggest that deep learning algorithms could be adopted to find optimal transistor dimensions in relatively small circuitry such as analog amplifiers. However, those approaches are not capable of exploring different circuit structures to meet the given design constraints. In this work, we propose an automatic circuit design framework that can generate practical circuit structures from scratch as well as optimize the size of each transistor, considering performance and reliability. We employ the framework to design level shifter circuits, and the experimental results show that the framework produces novel level shifter circuit topologies and the automatically optimized designs achieve 2.8-5.3× lower PDP than prior arts designed by human experts.설계 자동화는 대규모 디지털 시스템을 가능하게 하는 핵심 요소이지만 트랜지스터 수준에서 회로 설계 프로세스를 자동화하는 것은 여전히 어려운 과제로 남아 있습니다. 최근 연구에서는 아날로그 앰프와 같은 비교적 작은 회로에서 최적의 성능을 보이는 트랜지스터 크기를 찾기 위해 deep learning 알고리즘을 활용할 수 있다고 말합니다. 그러나 이러한 접근 방식은 주어진 설계 constraint를 충족하는 다른 회로 구조 탐색에 적용하기 어렵습니다. 본 연구에서는 성능과 신뢰성을 고려하여 각 트랜지스터의 크기를 최적화할 뿐만 아니라 처음부터 실용적인 회로 구조를 생성할 수 있는 자동 회로 설계 framework를 제안합니다. 우리는 framework를 사용하여 level shifter 회로를 설계했으며 실험 결과는 프레임워크가 새로운 level shifter 회로 토폴로지를 생성하고 자동으로 최적화된 설계가 인간 전문가가 설계한 선행 기술보다 2.8-5.3배 더 낮은 PDP를 달성한다는 것을 보여줍니다.Abstract i Contents ii List of Tables iv List of Figures v List of Algorithms vi 1 Introduction 1 2 Related work 6 2.1 Genetic Algorithm 6 2.2 NeuroEvolution of Augmenting Topologies (NEAT) 7 2.3 Reinforcement Learning (RL) 10 2.4 DDPG, D4PG, and PPO 12 2.5 Level Shifter 14 3 Proposed circuit design framework 17 3.1 Topology Generator 17 3.2 Circuit Optimizer 25 4 Experiment Result 32 4.1 Level Shifter Design 32 4.2 Topology Generation 34 4.3 Circuit Optimization 36 4.4 Test Chip Fabrication 42 4.5 Applicability of Topology Generator 47 5 Conclusion 50 Abstract (In Korean) 57석

Digital and analog TFET circuits: Design and benchmark

In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions

Digital and analog TFET circuits: Design and benchmark

In this work, we investigate by means of simulations the performance of basic digital, analog, and mixed-signal circuits employing tunnel-FETs (TFETs). The analysis reviews and complements our previous papers on these topics. By considering the same devices for all the analysis, we are able to draw consistent conclusions for a wide variety of circuits. A virtual complementary TFET technology consisting of III-V heterojunction nanowires is considered. Technology Computer Aided Design (TCAD) models are calibrated against the results of advanced full-quantum simulation tools and then used to generate look-up-tables suited for circuit simulations. The virtual complementary TFET technology is benchmarked against predictive technology models (PTM) of complementary silicon FinFETs for the 10 nm node over a wide range of supply voltages (VDD) in the sub-threshold voltage domain considering the same footprint between the vertical TFETs and the lateral FinFETs and the same static power. In spite of the asymmetry between p- and n-type transistors, the results show clear advantages of TFET technology over FinFET for VDDlower than 0.4 V. Moreover, we highlight how differences in the I-V characteristics of FinFETs and TFETs suggest to adapt the circuit topologies used to implement basic digital and analog blocks with respect to the most common CMOS solutions

Design and Implementation of Low Power SRAM Using Highly Effective Lever Shifters

The explosive growth of battery-operated devices has made low-power design a priority in recent years. In high-performance Systems-on-Chip, leakage power consumption has become comparable to the dynamic component, and its relevance increases as technology scales. These trends are even more evident for SRAM memory devices since they are a dominant source of standby power consumption in low-power application processors. The on-die SRAM power consumption is particularly important for increasingly pervasive mobile and handheld applications where battery life is a key design and technology attribute. In the SRAM-memory design, SRAM cells also comprise the most significant portion of the total chip. Moreover, the increasing number of transistors in the SRAM memories and the MOSs\u27 increasing leakage current in the scaled technologies have turned the SRAM unit into a power-hungry block for both dynamic and static viewpoints. Although the scaling of the supply voltage enables low-power consumption, the SRAM cells\u27 data stability becomes a major concern. Thus, the reduction of SRAM leakage power has become a critical research concern. To address the leakage power consumption in high-performance cache memories, a stream of novel integrated circuit and architectural level techniques are proposed by researchers including leakage-current management techniques, cell array leakage reduction techniques, bitline leakage reduction techniques, and leakage current compensation techniques. The main goal of this work was to improve the cell array leakage reduction techniques in order to minimize the leakage power for SRAM memory design in low-power applications. This study performs the body biasing application to reduce leakage current as well. To adjust the NMOSs\u27 threshold voltage and consequently leakage current, a negative DC voltage could be applied to their body terminal as a second gate. As a result, in order to generate a negative DC voltage, this study proposes a negative voltage reference that includes a trimming circuit and a negative level shifter. These enhancements are employed to a 10kb SRAM memory operating at 0.3V in a 65nm CMOS process

Analysis and design of wideband voltage controlled oscillators using self-oscillating active inductors.

Voltage controlled oscillators (VCOs) are essential components of RF circuits used in transmitters and receivers as sources of carrier waves with variable frequencies. This, together with a rapid development of microelectronic circuits, led to an extensive research on integrated implementations of the oscillator circuits. One of the known approaches to oscillator design employs resonators with active inductors electronic circuits simulating the behavior of passive inductors using only transistors and capacitors. Such resonators occupy only a fraction of the silicon area necessary for a passive inductor, and thus allow to use chip area more eectively. The downsides of the active inductor approach include: power consumption and noise introduced by transistors. This thesis presents a new approach to active inductor oscillator design using selfoscillating active inductor circuits. The instability necessary to start oscillations is provided by the use of a passive RC network rather than a power consuming external circuit employed in the standard oscillator approach. As a result, total power consumption of the oscillator is improved. Although, some of the active inductors with RC circuits has been reported in the literature, there has been no attempt to utilise this technique in wideband voltage controlled oscillator design. For this reason, the dissertation presents a thorough investigation of self-oscillating active inductor circuits, providing a new set of design rules and related trade-os. This includes: a complete small signal model of the oscillator, sensitivity analysis, large signal behavior of the circuit and phase noise model. The presented theory is conrmed by extensive simulations of wideband CMOS VCO circuit for various temperatures and process variations. The obtained results prove that active inductor oscillator performance is obtained without the use of standard active compensation circuits. Finally, the concept of self-oscillating active inductor has been employed to simple and fast OOK (On-Off Keying) transmitter showing energy eciency comparable to the state of the art implementations reported in the literature