Small Form Factor Hybrid CMOS/GaN Buck Converters for 10W Point of Load Applications

abstract: Point of Load (PoL) converters are important components to the power distribution system in computer power supplies as well as automotive, space, nuclear, and medical electronics. These converters often require high output current capability, low form factor, and high conversion ratios (step-down) without sacrificing converter efficiency. This work presents hybrid silicon/gallium nitride (CMOS/GaN) power converter architectures as a solution for high-current, small form-factor PoL converters. The presented topologies use discrete GaN power devices and CMOS integrated drivers and controller loop. The presented power converters operate in the tens of MHz range to reduce the form factor by reducing the size of the off-chip passive inductor and capacitor. Higher conversion ratio is achieved through a fast control loop and the use of GaN power devices that exhibit low parasitic gate capacitance and minimize pulse swallowing. This work compares three discrete buck power converter architectures: single-stage, multi-phase with 2 phases, and stacked-interleaved, using components-off-the-shelf (COTS). Each of the implemented power converters achieves over 80% peak efficiency with switching speeds up-to 10MHz for high conversion ratio from 24V input to 5V output and maximum load current of 10A. The performance of the three architectures is compared in open loop and closed loop configurations with respect to efficiency, output voltage ripple, and power stage form factor. Additionally, this work presents an integrated CMOS gate driver solution in CMOS 0.35um technology. The CMOS integrated circuit (IC) includes the gate driver and the closed loop controller for directly driving a single-stage GaN architecture. The designed IC efficiently drives the GaN devices up to 20MHz switching speeds. The presented controller technique uses voltage mode control with an innovative cascode driver architecture to allow a 3.3V CMOS devices to effectively drive GaN devices that require 5V gate signal swing. Furthermore, the designed power converter is expected to operate under 400MRad of total dose, thus enabling its use in high-radiation environments for the large hadron collider at CERN and nuclear facilities.Dissertation/ThesisMasters Thesis Electrical Engineering 201

A Low-Power Interface for Capacitive Sensors With PWM Output and Intrinsic Low Pass Characteristic

A compact, low power interface for capacitive sensors, is described. The output signal is a pulse width modulated (PWM) signal, where the pulse duration is linearly proportional to the sensor differential capacitance. The original conversion approach consists in stimulating the sensor capacitor with a triangular-like voltage waveform in order to obtain a square-like current waveform, which is subsequently demodulated and integrated over a clock period. The charge obtained in this way is then converted into the output pulse duration by an approach that includes an intrinsic tunable low pass function. The main non idealities are thoroughly investigated in order to provide useful design indications and evaluate the actual potentialities of the proposed circuit. The theoretical predictions are compared with experimental results obtained with a prototype, designed and fabricated using 0.32 mu M CMOS devices from the BCD6s process of STMicroelectroncs. The prototype occupies a total area of 1025 x 515 mm(2) and is marked by a power consuption of 84 mu W. The input capacitance range is 0-256 fF, with a resolution of 0.8 fF and a temperature sensitivity of 300 ppm/degrees C

High Performance Local Oscillator Design for Next Generation Wireless Communication

Local Oscillator (LO) is an essential building block in modern wireless radios. In modern wireless radios, LO often serves as a reference of the carrier signal to modulate or demod- ulate the outgoing or incoming data. The LO signal should be a clean and stable source, such that the frequency or timing information of the carrier reference can be well-defined. However, as radio architecture evolves, the importance of LO path design has become much more important than before. Of late, many radio architecture innovations have exploited sophisticated LO generation schemes to meet the ever-increasing demands of wireless radio performances. The focus of this thesis is to address challenges in the LO path design for next-generation high performance wireless radios. These challenges include (1) Congested spectrum at low radio frequency (RF) below 5GHz (2) Continuing miniaturization of integrated wireless radio, and (3) Fiber-fast (>10Gb/s) mm-wave wireless communication. The thesis begins with a brief introduction of the aforementioned challenges followed by a discussion of the opportunities projected to overcome these challenges. To address the challenge of congested spectrum at frequency below 5GHz, novel ra- dio architectures such as cognitive radio, software-defined radio, and full-duplex radio have drawn significant research interest. Cognitive radio is a radio architecture that opportunisti- cally utilize the unused spectrum in an environment to maximize spectrum usage efficiency. Energy-efficient spectrum sensing is the key to implementing cognitive radio. To enable energy-efficient spectrum sensing, a fast-hopping frequency synthesizer is an essential build- ing block to swiftly sweep the carrier frequency of the radio across the available spectrum. Chapter 2 of this thesis further highlights the challenges and trade-offs of the current LO gen- eration scheme for possible use in sweeping LO-based spectrum analysis. It follows by intro- duction of the proposed fast-hopping LO architecture, its implementation and measurement results of the validated prototype. Chapter 3 proposes an embedded phase-shifting LO-path design for wideband RF self-interference cancellation for full-duplex radio. It demonstrates a synergistic design between the LO path and signal to perform self-interference cancellation. To address the challenge of continuing miniaturization of integrated wireless radio, ring oscillator-based frequency synthesizer is an attractive candidate due to its compactness. Chapter 4 discussed the difficulty associated with implementing a Phase-Locked Loop (PLL) with ultra-small form-factor. It further proposes the concept sub-sampling PLL with time- based loop filter to address these challenges. A 65nm CMOS prototype and its measurement result are presented for validation of the concept. In shifting from RF to mm-wave frequencies, the performance of wireless communication links is boosted by significant bandwidth and data-rate expansion. However, the demand for data-rate improvement is out-pacing the innovation of radio architectures. A >10Gb/s mm-wave wireless communication at 60GHz is required by emerging applications such as virtual-reality (VR) headsets, inter-rack data transmission at data center, and Ultra-High- Definition (UHD) TV home entertainment systems. Channel-bonding is considered to be a promising technique for achieving >10Gb/s wireless communication at 60GHz. Chapter 5 discusses the fundamental radio implementation challenges associated with channel-bonding for 60GHz wireless communication and the pros and cons of prior arts that attempted to address these challenges. It is followed by a discussion of the proposed 60GHz channel- bonding receiver, which utilizes only a single PLL and enables both contiguous and non- contiguous channel-bonding schemes. Finally, Chapter 6 presents the conclusion of this thesis

Design, analysis and implementation of voltage sensor for power-constrained systems

PhD ThesisThanks to an extensive effort by the global research community, the electronic technology has significantly matured over the last decade. This technology has enabled certain operations which humans could not otherwise easily perform. For instance, electronic systems can be used to perform sensing, monitoring and even control operations in environments such as outer space, underground, under the sea or even inside the human body. The main difficulty for electronics operating in these environments is access to a reliable and permanent source of energy. Using batteries as the immediate solution for this problem has helped to provide energy for limited periods of time; however, regular maintenance and replacement are required. Consequently, battery solutions fail wherever replacing them is not possible or operation for long periods is needed. For such cases, researchers have proposed harvesting ambient energy and converting it into an electrical form. An important issue with energy harvesters is that their operation and output power depend critically on the amount of energy they receive and because ambient energy often tends to be sporadic in nature, energy harvesters cannot produce stable or fixed levels of power all of the time. Therefore, electronic devices powered in this way must be capable of adapting their operation to the energy status of the harvester. To achieve this, information on the energy available for use is needed. This can be provided by a sensor capable of measuring voltage. However, stable and fixed voltage and time references are a prerequisite of most traditional voltage measurement devices, but these generally do not exist in energy harvesting environments. A further challenge is that such a sensor also needs to be powered by the energy harvester’s unstable voltage. In this thesis, the design of a reference-free voltage sensor, which can operate with a varying voltage source, is provided based on the capture of a portion of the total energy which is directly related to II the energy being sensed. This energy is then used to power a computation which quantifies captured energy over time, with the information directly generated as digital code. The sensor was fabricated in the 180 nm technology node and successfully tested by performing voltage measurements over the range 1.8 V to 0.8 V

Design and Implementation of High-Efficiency, Lightweight, System-Friendly Solid-State Circuit Breaker

Direct current (DC) distribution system has shown potential over the alternative current (AC) distribution system in some application scenarios, e.g., electrified transportation, renewable energy, data center, etc. Because of the fast response speed, DC solid-state circuit breaker (SSCB) becomes a promising technology for the future power electronics intensive DC energy system with fault-tolerant capability. First, a thorough literature survey is performed to review the DC-SSCB technology. The key components for DC-SSCB, including power semiconductors, topologies, energy absorption units, and fault detection circuits, are studied. It is observed that the prior studies mainly focus on the basic interruption capability of the DC-SSCB. There are not so many studies on SSCB’s size optimization or system-friendly functions. Second, an insulated gate bipolar transistor (IGBT) based lightweight SSCB is proposed. With the reduced gate voltage, the proposed SSCB can limit the peak fault current without the bulky and heavy fault current limiting the inductor, which exists in the conventional SSCB circuit. Thus, the specific power density of the SSCB is substantially improved compared with the conventional design. Meanwhile, to understand the impact of different design parameters on the performance of SSCB, an analytical model is built to establish the relationship between SSCB dynamic performance and operating conditions considering the key components and circuit parasitics. Simulation and test results demonstrate the accuracy of the proposed model. To limit the fault current with the proposed SSCB without a current limiting inductor, power semiconductors need to operate in the active region temporarily. During this interval, a severe voltage oscillation has been observed experimentally, leading to the DC-SSCB overstress and eventually the failure. A detailed MATLAB/Simulink model is built to understand the mechanism causing the voltage oscillation. Three suppression methods using enhanced gate drive circuitry are proposed and compared. Test results based on a 2kV/1kA SSCB prototype demonstrate the effectiveness of the proposed oscillation mitigation method and the accuracy of the derived model. Meanwhile, when the system fault impedance is close to zero (e.g., high di/dt), the influence of the parasitic inductance contributed by interconnection (e.g., bus bar, module package, etc.) cannot be neglected. To study the influence of the bus bar connections on SSCB with high di/dt, a Q3D extractor is adopted to extract the parasitic parameters of the SSCB and understand the influence of different bus bar connections. A vertical bus bar is proposed to suppress the side effect and verified by the Q3D extractor and experimental results. Finally, a system-friendly SSCB is demonstrated. The proposed gate drive enables the SSCB to operate in the current limitation mode for the overcurrent limitation. The current limitation level and limitation time can be tuned by the gate drive. Then, this dissertation provides an all-in-one solution with integrated circuitries as the fault detector, actuator for the semiconductor’s operating status regulation, and coordinated control. This allows the developed SSCB to limit system fault current not exceeding short-circuit current rating (SCCR) and also take different responses under different fault cases. The feasibility and the effectiveness of the proposed system-friendly SSCB are validated with experimental results based on a 200V/10A SSCB demonstrator

Design and test of digitally-controlled power management IPs in advanced CMOS technologies

Les technologies avancées de semi-conducteur permettent de mettre en œuvre un contrôleur numérique dédié aux convertisseurs à découpage, de faible puissance et de fréquence de découpage élevée sur FPGA et ASIC. Cette thèse vise à proposer des contrôleurs numériques des performances élevées, de faible consommation énergétique et qui peuvent être implémentés facilement. En plus des contrôleurs numériques existants comme PID, RST, tri-mode et par mode de glissement, un nouveau contrôleur numérique (DDP) pour le convertisseur abaisseur de tension est proposé sur le principe de la commande prédictive: il introduit une nouvelle variable de contrôle qui est la position de la largeur d'impulsion permettant de contrôler de façon simultanée le courant dans l'inductance et la tension de sortie. La solution permet une dynamique très rapide en transitoire, aussi bien pour la variation de la charge que pour les changements de tension de référence. Les résultats expérimentaux sur FPGA vérifient les performances de ce contrôleur jusqu'à la fréquence de découpage de 4MHz. Un contrôleur numérique nécessite une modulation numérique de largeur d'impulsion (DPWM). L'approche Sigma-Delta de la DPWM est un bon candidat en ce qui concerne le compromis entre la complexité et les performances. Un guide de conception d'étage Sigma-Delta pour le DPWM est présenté. Une architecture améliorée de traditionnelles 1-1 MASH Sigma-Delta DPWM est synthétisée sans détérioration de la stabilité en boucle fermée ainsi qu'en préservant un coût raisonnable en ressources matérielles. Les résultats expérimentaux sur FPGA vérifient les performances des DPWM proposées en régimes stationnaire et transitoire. Deux ASICs sont portés en CMOS 0,35 m: le contrôleur en tri-mode pour le convertisseur abaisseur de tension et la commande par mode de glissement pour les convertisseurs abaisseur et élévateur de tension. Les bancs de test sont conçus pour conduire à un modèle d'évaluation de consommation énergétique. Pour le contrôleur en tri-mode, la consommation de puissance mesurée est seulement de 24,56mW/MHz lorsque le ratio de temps en régime de repos (stand-by) est 0,7. Les consommations de puissance de command par mode de glissement pour les convertisseurs abaisseur et élévateur de tension sont respectivement de 4,46mW/MHz et 4,79mW/MHz. En utilisant le modèle de puissance, une consommation de la puissance estimée inférieure à 1mW/MHz est envisageable dans des technologies CMOS plus avancées. Comparé aux contrôlés homologues analogiques de l'état de l'art, les prototypes ASICs illustrent la possibilité d'atteindre un rendement comparable pour les applications de faible et de moyen puissance mais avec l'avantage d'une meilleure précision et une meilleure flexibilité.Owing to the development of modern semiconductor technology, it is possible to implement a digital controller for low-power high switching frequency DC-DC power converter in FPGA and ASIC. This thesis is intended to propose digital controllers with high performance, low power consumption and simple implementation architecture. Besides existing digital control-laws, such as PID, RST, tri-mode and sliding-mode (SM), a novel digital control-law, direct control with dual-state-variable prediction (DDP control), for the buck converter is proposed based on the principle of predictive control. Compared to traditional current-mode predictive control, the predictions of the inductor current and the output voltage are performed at the same time by adding a control variable to the DPWM signal. DDP control exhibits very high dynamic transient performances under both load variations and reference changes. Experimental results in FPGA verify the performances at switching frequency up to 4MHz. For the boost converter exhibiting more serious nonlinearity, linear PID and nonlinear SM controllers are designed and implemented in FPGA to verify the performances. A digital control requires a DPWM. Sigma-Delta DPWM is therefore a good candidate regarding the implementation complexity and performances. An idle-tone free condition for Sigma-Delta DPWM is considered to reduce the inherent tone-noise under DC-excitation compared to the classic approach. A guideline for Sigma-Delta DPWM helps to satisfy proposed condition. In addition, an 1-1 MASH Sigma-Delta DPWM with a feasible dither generation module is proposed to further restrain the idle-tone effect without deteriorating the closed-loop stability as well as to preserve a reasonable cost in hardware resources. The FPGA-based experimental results verify the performances of proposed DPWM in steady-state and transient-state. Two ASICs in 0.35 m CMOS process are implemented including the tri-mode controller for buck converter and the PID and SM controllers for the buck and boost converters respectively. The lab-scale tests are designed to lead to a power assessment model suggesting feasible applications. For the tri-mode controller, the measured power consumption is only 24.56mW/MHz when the time ratio of stand-by operation mode is 0.7. As specific power optimization strategies in RTL and system-level are applied to the latter chip, the measured power consumptions of the SM controllers for buck converter and boost converter are 4.46mW/MHz and 4.79mW/MHz respectively. The power consumption is foreseen as less than 1mW/MHz when the process scales down to nanometer technologies based on the power-scaling model. Compared to the state-of-the-art analog counterpart, the prototype ICs are proven to achieve comparable or even higher power efficiency for low-to-medium power applications with the benefit of better accuracy and better flexibility.VILLEURBANNE-DOC'INSA-Bib. elec. (692669901) / SudocSudocFranceF

Extreme Temperature Switch Mode Power Supply Based on Vee-square Control Using Silicon Carbide, Silicon on Sapphire, Hybrid Technology

Switch mode power supplies, commonly known as SMPS are basic building blocks of the electronic systems. SMPS performs power regulation by accepting a raw input voltage and transforming it to required voltage at output with desired characteristics. Electronic systems used in applications such as deep well oil drilling, geothermal wells and deep space explorations is expected to operate under extremely harsh conditions like elevated temperature, high pressure and radiation prone environments. To support the onboard electronics in these applications, SMPS capable of operating at extreme temperatures are of high interest.This research work deals with the design and development of a switch mode power supply capable of operating over the temperature range of 300 degree centigrade (�C). Silicon carbide field effect transistors are used as power devices in the design to tolerate these extreme high ambient temperatures without compromising power handling capability. The simplest yet robust vee square control architecture is adopted for control mechanism. The control electronics are implemented as an integrated circuit in 0.5 �m silicon on sapphire process. The supporting components like high temperature tolerant inductors and capacitors are identified by evaluating various samples at elevated temperature. This is the first demonstration of SMPS capable of operating at 275�C as a standalone component. Also for the first time, a gate drive mechanism based on planar transformer architecture is studied and presented for high temperature operation. A low cost packaging technique suited for harsh environment operation is proposed based on gold on aluminum nitride thin film technology. The basic analog building blocks of the system, such as comparator, voltage reference and rail-to-rail amplifiers are made available in discrete packages for use at temperatures above 275�C. A SMPS prototype on a 1.8 square inches substrate is developed and tested. Test results indicate that the system is capable of operating continuously at 275�C for extended period of time, providing the desired performance characteristics.School of Electrical & Computer Engineerin

Fault Diagnosis and Condition Monitoring of Power Electronic Components Using Spread Spectrum Time Domain Reflectometry (SSTDR) and the Concept of Dynamic Safe Operating Area (SOA)

Title from PDF of title page viewed April 1, 2021Dissertation advisors: Faisal Khan and Yong ZengVitaIncludes bibliographical references ( page 117-132)Thesis (Ph.D.)--School of Computing and Engineering and Department of Mathematics and Statistics. University of Missouri--Kansas City, 2021Fault diagnosis and condition monitoring (CM) of power electronic components with a goal of improving system reliability and availability have been one of the major focus areas in the power electronics field in the last decades. Power semiconductor devices such as metal oxide semiconductor field-effect transistor (MOSFET) and insulated-gate bipolar transistor (IGBT) are considered to be the most fragile element of the power electronic systems and their reliability degrades with time due to mechanical and thermo-electrical stresses, which ultimately leads to a complete failure of the overall power conversion systems. Therefore, it is important to know the present state of health (SOH) of the power devices and the remaining useful life (RUL) of a power converter in order to perform preventive scheduled maintenance, which will eventually lead to increased system availability and reduced cost. In conventional practice, device aging and lifetime prediction techniques rely on the estimation of the meantime to failure (MTTF), a value that represents the expected lifespan of a device. MTTF predicts expected lifespan, but cannot adequately predict failures attributed to unusual circumstances or continuous overstress and premature degradation. This inability is due in large part to the fact that it considers the device safe operating area (SOA) or voltage and current ride-through capability to be independent of SOH. However, we experimentally proved that SOA of any semiconductor device goes down with the increased level of aging, and therefore, the probability of occurrence of over-voltage/current situation increases. As a result, the MTTF of the device as well as the overall converter reliability reduces with aging. That said, device degradation can be estimated by accomplishing an accurate online degradation monitoring tool that will determine the dynamic SOA. The correlation between aging and dynamic SOA gives us the useful remaining life of the device or the availability of a circuit. For this monitoring tool, spread spectrum time domain reflectometry (SSTDR) has been proposed and was successfully implemented in live power converters. In SSTDR, a high-frequency sine-modulated pseudo-noise sequence (SMPNS) is sent through the system, and reflections from age-related impedance discontinuities return to the test end where they are analyzed. In the past, SSTDR has been successfully used for device degradation detection in power converters while running at static conditions. However, the rapid variation in impedance throughout the entire live converter circuit caused by the fast-switching operation makes CM more challenging while using SSTDR. The algorithms and techniques developed in this project have overcome this challenge and demonstrated that the SSTDR test data are consistent with the aging of the power devices and do not affect the switching performance of the modulation process even the test signal is applied across the gate-source interface of the power MOSFET. This implies that the SSTDR technique can be integrated with the gate driver module, thereby creating a new platform for an intelligent gate-driver architecture (IGDA) that enables real-time health monitoring of power devices while performing features offered by a commercially available driver. Another application of SSTDR in power electronic systems is the ground fault prediction and detection technique for PV arrays. Protecting PV arrays from ground faults that lead to fire hazards and power loss is imperative to maintaining safe and effective solar power operations. Unlike many standard detection methods, SSTDR does not depend on fault current, therefore, can be implemented for testing ground faults at night or low illumination. However, wide variation in impedance throughout different materials and interconnections makes fault location more challenging than fault detection. This barrier was surmounted by the SSTDR-based fault detection algorithm developed in this project. The proposed algorithm was accounted for any variation in the number of strings, fault resistance, and the number of faults. In addition to its general utility for fault detection, the proposed algorithm can identify the location of multiple faults using only a single measurement point, thereby working as a preventative measure to protect the entire system at a reduced cost. Within the scope of the research work on SSTDR-based fault diagnosis and CM of power electronic components, a cell-level SOH measurement tool has been proposed that utilizes SSTDR to detect the location and aging of individual degraded cells in a large series-parallel connected Li-ion battery pack. This information of cell level SOH along with the respective cell location is critical to calculating the SOH of a battery pack and its remaining useful lifetime since the initial SOH of Li-ion cells varies under different manufacturing processes and operating conditions, causing them to perform inconsistently and thereby affect the performance of the entire battery pack in real-life applications. Unfortunately, today’s BMS considers the SOH of the entire battery pack/cell string as a single SOH and therefore, cannot monitor the SOH at the cell level. A healthy battery string has a specific impedance between the two terminals, and any aged cell in that string will change the impedance value. Since SSTDR can characterize the impedance change in its propagation path along with its location, it can successfully locate the degraded cell in a large battery pack and thereby, can prevent premature failure and catastrophic danger by performing scheduled maintenance.Introduction -- Background study and literature review -- Fundamentals of Spread Spectrum Time Domain Reflectometry (SSTDR): A new method for testing electronics live -- Accelerated aging test bench: design and implementation -- Condition monitoring of power switching in live power switching devices in live power electronic converters using SSTDR -- An irradiance-independent, robust ground-fault detection scheme for PV arrays based on SSTDR -- Detection of degraded/aged cell in a LI-Ion battery pack using SSTDR -- Dynamiv safe operating area (SOA) of power semiconductor devices -- Conclusion and future researc