2,398 research outputs found

    Optimizing hardward granularity in parallel systems

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    On the Area of Hypercube Layouts

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    This paper precisely analyzes the wire density and required area in standard layout styles for the hypercube. The most natural, regular layout of a hypercube of N^2 nodes in the plane, in a N x N grid arrangement, uses floor(2N/3)+1 horizontal wiring tracks for each row of nodes. (The number of tracks per row can be reduced by 1 with a less regular design.) This paper also gives a simple formula for the wire density at any cut position and a full characterization of all places where the wire density is maximized (which does not occur at the bisection).Comment: 8 pages, 4 figures, LaTe

    Reconfigurable architecture for very large scale microelectronic systems

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    Spiropyran modified micro-fluidic chip channels as photonically controlled self-indicating system for metal ion accumulation and release

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    In this paper, we show how through integrating the beneficial characteristics of micro-fluidic devices and spiropyrans dyes, a simple and very innovative chip configured as an on-line photonically controlled self-indicating system for metal ion accumulation and release can be realised. The micro-fluidic device consists of five independent 94 μm depth, 150 μm width channels fabricated in polydimethylsiloxane. The spiropyran 1’-(3-carboxypropyl)-3,3’-dimethyl-6-nitrospiro-1-benzopyran-2,2’-indoline is immobilised by physical adsorption into a polydimethylsiloxane matrix and covalently on the ozone plasma activated polydimehylsiloxane micro-channel walls. When the colourless, inactive, spiropyran coating absorbs UV light it switches to the highly coloured merocyanine form, which also has an active binding site for certain metal ions. Therefore metal ion uptake can be triggered using UV light and subsequently reversed on demand by shining white light on the coloured complex, which regenerates the inactive spiropyran form, and releases the metal ion. When stock solutions of several metal ions (Ca2+, Zn2+, Hg2+, Cu2+, Co2+) are pumped independently through the five channels, different optical responses were observed for each metal, and the platform can therefore be regarded as a micro-structured device for online self-indicating metal ion complexation, accumulation and release

    High-Density Solid-State Memory Devices and Technologies

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    This Special Issue aims to examine high-density solid-state memory devices and technologies from various standpoints in an attempt to foster their continuous success in the future. Considering that broadening of the range of applications will likely offer different types of solid-state memories their chance in the spotlight, the Special Issue is not focused on a specific storage solution but rather embraces all the most relevant solid-state memory devices and technologies currently on stage. Even the subjects dealt with in this Special Issue are widespread, ranging from process and design issues/innovations to the experimental and theoretical analysis of the operation and from the performance and reliability of memory devices and arrays to the exploitation of solid-state memories to pursue new computing paradigms

    An Empirical Comparison of Area-Universal and Other Parallel Computing Networks

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    This paper provides empirical comparison of the communication capabilities of two area-universal networks, the fat-tree and the fat-pyramid, to the popular mesh and hypercube networks for parallel computation. While area-universal networks have been proven capable of simulating, with modest slowdown, any computation of any other network of comparable area, prior work has generally left open the question of how area-universal networks compare to other networks in practice. Comparisons are performed using techniques of throughput and latency analysis that have previously been applied to k-ary n-cube networks and using various existing models to equate the hardware cost of the networks being compared. The increasingly popular wormhole routing model is used throughout

    A critical review on recent progress of solution-processed monolayer assembly of nanomaterials and applications

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    The rapid development in nanotechnology has necessitated accurate and efficient assembly strategies for nanomaterials. Monolayer assembly of nanomaterials (MAN) represents an extreme challenge in manufacturing and is critical in understanding interactions among nanomaterials, solvents, and substrates. MAN enables highly tunable performance in electronic and photonic devices. This review summarizes the recent progress on the methods to achieve MAN and discusses important control factors. Moreover, the importance of MAN is elaborated by a broad range of applications in electronics and photonics. In the end, we outlook the opportunities as well as challenges in manufacturing and new applications
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