A Mixed-Signal Demodulator for a Low-Complexity IR-UWB Receiver: Methodology, Simulation and Design

This works presents an integrated 0.18μm CMOS 2-PPM demodulator based on a switched capacitor network for an Energy Detection Impulse-Radio UWB receiver. The circuit has been designed using a top-down methodology that allows to discover the impact of low-level non-idealities on system-level performance. Through the use of a mixed signal simulation environment, performance figures have been obtained which helped evaluate the influence at system-level of the non-idealities of the most critical block. Results show that the circuit allows the replacement of the ADC typically employed in Energy Detection receivers and provides about infinite equivalent quantization resolution. The demodulator achieves 190 pJ/bit at 1.8V

Low power VCO-based analog-to-digital conversion

textThis dissertation presents novel two stage ADC architecture with a VCO based second stage. With the scaling of the supply voltages in modern CMOS process it is difficult to design high gain operational amplifiers needed for traditional voltage domain two-stage analog to digital converters. However time resolution continues to improve with the advancement in CMOS technology making VCO-based ADC more attractive. The nonlinearity in voltage-to-frequency transfer function is the biggest challenge in design of VCO based ADC. The hybrid approach used in this work uses a voltage domain first stage to determine the most significant bits and uses a VCO based second stage to quantize the small residue obtained from first stage. The architecture relaxes the gain requirement on the the first stage opamp and also relaxes the linearity requirements on the second stage VCO. The prototype ADC built in 65nm CMOS process achieves 63.7dB SNDR in 10MHz bandwidth while only consuming 1.1mW of power. The performance of the prototype chip is comparable to the state-of-art in terms of figure-of-merit but this new architecture uses significantly less circuit area.Electrical and Computer Engineerin

Design techniques for low-power SAR ADCs in nano-scale CMOS technologies

This thesis presents low power design techniques for successive approximation register (SAR) analog-to-digital converters (ADCs) in nano-scale CMOS technologies. Low power SAR ADCs face two major challenges especially at high resolutions: (1) increased comparator power to suppress the noise, and (2) increased DAC switching energy due to the large DAC size. To improve the comparator’s power efficiency, a statistical estimation based comparator noise reduction technique is presented. It allows a low power and noisy comparator to achieve high signal-to-noise ratio (SNR) by estimating the conversion residue. A first prototype ADC in 65nm CMOS has been developed to validate the proposed noise reduction technique. It achieves 4.5 fJ/conv-step Walden figure of merit and 64.5 dB signal-to-noise and distortion ratio (SNDR). In addition, a bidirectional single-side switching technique is developed to reduce the DAC switching power. It can reduce the DAC switching power and the total number of unit capacitors by 86% and 75%, respectively. A second prototype ADC with the proposed switching technique is designed and fabricated in 180nm CMOS technology. It achieves an SNDR of 63.4 dB and consumes only 24 Wat 1MS/s, leading to aWalden figure of merit of 19.9 fJ/conv-step. This thesis also presents an improved loop-unrolled SAR ADC, which works at high frequency with reduced SAR logic power and delay. It employs the bidirectional single-side switching technique to reduce the comparator common-mode voltage variation. In addition, it uses a Vcm-adaptive offset calibration technique which can accurately calibrate comparator’s offset at its operating Vcm. A prototype ADC designed in 40nm CMOS achieves 35 dB at 700 MS/s sampling rate and consumes only 0.95 mW, leading to a Walden figure of merit of 30 fJ/conv-step.Electrical and Computer Engineerin

Time-encoding analog-to-digital converters : bridging the analog gap to advanced digital CMOS? Part 2: architectures and circuits

The scaling of CMOS technology deep into the nanometer range has created challenges for the design of highperformance analog ICs: they remain large in area and power consumption in spite of process scaling. Analog circuits based on time encoding [1], [2], where the signal information is encoded in the waveform transitions instead of its amplitude, have been developed to overcome these issues. While part one of this overview article [3] presented the basic principles of time encoding, this follow-up article describes and compares the main time-encoding architectures for analog-to-digital converters (ADCs) and discusses the corresponding design challenges of the circuit blocks. The focus is on structures that avoid, as much as possible, the use of traditional analog blocks like operational amplifiers (opamps) or comparators but instead use digital circuitry, ring oscillators, flip-flops, counters, an so on. Our overview of the state of the art will show that these circuits can achieve excellent performance. The obvious benefit of this highly digital approach to realizing analog functionality is that the resulting circuits are small in area and more compatible with CMOS process scaling. The approach also allows for the easy integration of these analog functions in systems on chip operating at "digital" supply voltages as low as 1V and lower. A large part of the design process can also be embedded in a standard digital synthesis flow

A Low-Power Silicon-Photomultiplier Readout ASIC for the CALICE Analog Hadronic Calorimeter

The future e + e − collider experiments, such as the international linear collider, provide precise measurements of the heavy bosons and serve as excellent tests of the underlying fundamental physics. To reconstruct these bosons with an unprecedented resolution from their multi-jet final states, a detector system employing the particle flow approach has been proposed, requesting calorimeters with imaging capabilities. The analog hadron calorimeter based on the SiPM-on-tile technology is one of the highly granular candidates of the imaging calorimeters. To achieve the compactness, the silicon-photomultiplier (SiPM) readout electronics require a low-power monolithic solution. This thesis presents the design of such an application-specific integrated circuit (ASIC) for the charge and timing readout of the SiPMs. The ASIC provides precise charge measurement over a large dynamic range with auto-triggering and local zero-suppression functionalities. The charge and timing information are digitized using channel-wise analog-to-digital and time-to-digital converters, providing a fully integrated solution for the SiPM readout. Dedicated to the analog hadron calorimeter, the power-pulsing technique is applied to the full chip to meet the stringent power consumption requirement. This work also initializes the commissioning of the calorimeter layer with the use of the designed ASIC. An automatic calibration procedure has been developed to optimized the configuration settings for the chip. The new calorimeter base unit with the designed ASIC has been produced and its functionality has been tested

INTEGRATED SINGLE-PHOTON SENSING AND PROCESSING PLATFORM IN STANDARD CMOS

Practical implementation of large SPAD-based sensor arrays in the standard CMOS process has been fraught with challenges due to the many performance trade-offs existing at both the device and the system level [1]. At the device level the performance challenge stems from the suboptimal optical characteristics associated with the standard CMOS fabrication process. The challenge at the system level is the development of monolithic readout architecture capable of supporting the large volume of dynamic traffic, associated with multiple single-photon pixels, without limiting the dynamic range and throughput of the sensor. Due to trade-offs in both functionality and performance, no general solution currently exists for an integrated single-photon sensor in standard CMOS single photon sensing and multi-photon resolution. The research described herein is directed towards the development of a versatile high performance integrated SPAD sensor in the standard CMOS process. Towards this purpose a SPAD device with elongated junction geometry and a perimeter field gate that features a large detection area and a highly reduced dark noise has been presented and characterized. Additionally, a novel front-end system for optimizing the dynamic range and after-pulsing noise of the pixel has been developed. The pixel is also equipped with an output interface with an adjustable pulse width response. In order to further enhance the effective dynamic range of the pixel a theoretical model for accurate dead time related loss compensation has been developed and verified. This thesis also introduces a new paradigm for electrical generation and encoding of the SPAD array response that supports fully digital operation at the pixel level while enabling dynamic discrete time amplitude encoding of the array response. Thus offering a first ever system solution to simultaneously exploit both the dynamic nature and the digital profile of the SPAD response. The array interface, comprising of multiple digital inputs capacitively coupled onto a shared quasi-floating sense node, in conjunction with the integrated digital decoding and readout electronics represents the first ever solid state single-photon sensor capable of both photon counting and photon number resolution. The viability of the readout architecture is demonstrated through simulations and preliminary proof of concept measurements

Towards Data Reliable, Low-Power, and Repairable Resistive Random Access Memories

A series of breakthroughs in memristive devices have demonstrated the potential of memristor arrays to serve as next generation resistive random access memories (ReRAM), which are fast, low-power, ultra-dense, and non-volatile. However, memristors' unique device characteristics also make them prone to several sources of error. Owing to the stochastic filamentary nature of memristive devices, various recoverable errors can affect the data reliability of a ReRAM. Permanent device failures further limit the lifetime of a ReRAM. This dissertation developed low-power solutions for more reliable and longer-enduring ReRAM systems. In this thesis, we first look into a data reliability issue known as write disturbance. Writing into a memristor in a crossbar could disturb the stored values in other memristors that are on the same memory line as the target cell. Such disturbance is accumulative over time which may lead to complete data corruption. To address this problem, we propose the use of two regular memristors on each word to keep track of the disturbance accumulation and trigger a refresh to restore the weakened data, once it becomes necessary. We also investigate the considerable variation in the write-time characteristics of individual memristors. With such variation, conventional fixed-pulse write schemes not only waste significant energy, but also cannot guarantee reliable completion of the write operations. We address such variation by proposing an adaptive write scheme that adjusts the width of the write pulses for each memristor. Our scheme embeds an online monitor to detect the completion of a write operation and takes into account the parasitic effect of line-shared devices in access-transistor-free memristive arrays. We further investigate the use of this method to shorten the test time of memory march algorithms by eliminating the need of a verifying read right after a write, which is commonly employed in the test sequences of march algorithms.Finally, we propose a novel mechanism to extend the lifetime of a ReRAM by protecting it against hard errors through the exploitation of a unique feature of bipolar memristive devices. Our solution proposes an unorthodox use of complementary resistive switches (a particular implementation of memristive devices) to provide an ``in-place spare'' for each memory cell at negligible extra cost. The in-place spares are then utilized by a repair scheme to repair memristive devices that have failed at a stuck-at-ON state at a page-level granularity. Furthermore, we explore the use of in-place spares in lieu of other memory reliability and yield enhancement solutions, such as error correction codes (ECC) and spare rows. We demonstrate that with the in-place spares, we can yield the same lifetime as a baseline ReRAM with either significantly fewer spare rows or a lighter-weight ECC, both of which can save on energy consumption and area