2,652 research outputs found

    Tunable n-path notch filters for blocker suppression: modeling and verification

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    N-path switched-RC circuits can realize filters with very high linearity and compression point while they are tunable by a clock frequency. In this paper, both differential and single-ended N-path notch filters are modeled and analyzed. Closed-form equations provide design equations for the main filtering characteristics and nonidealities such as: harmonic mixing, switch resistance, mismatch and phase imbalance, clock rise and fall times, noise, and insertion loss. Both an eight-path single-ended and differential notch filter are implemented in 65-nm CMOS technology. The notch center frequency, which is determined by the switching frequency, is tunable from 0.1 to 1.2 GHz. In a 50- environment, the N-path filters provide power matching in the passband with an insertion loss of 1.4–2.8 dB. The rejection at the notch frequency is 21–24 dB,P1 db> + 2 dBm, and IIP3 > + 17 dBm

    A general theory of phase noise in electrical oscillators

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    A general model is introduced which is capable of making accurate, quantitative predictions about the phase noise of different types of electrical oscillators by acknowledging the true periodically time-varying nature of all oscillators. This new approach also elucidates several previously unknown design criteria for reducing close-in phase noise by identifying the mechanisms by which intrinsic device noise and external noise sources contribute to the total phase noise. In particular, it explains the details of how 1/f noise in a device upconverts into close-in phase noise and identifies methods to suppress this upconversion. The theory also naturally accommodates cyclostationary noise sources, leading to additional important design insights. The model reduces to previously available phase noise models as special cases. Excellent agreement among theory, simulations, and measurements is observed

    Characterizing an image intensifier in an full-field range image system

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    We are developing a high precision full-field range imaging system. An integral component in this system is an image intensifier, which is modulated at frequencies up to 100 MHz. The range measurement precision is dictated by the image intensifier performance, in particular, the achievable modulation frequency, modulation depth, and waveform shape. By characterizing the image intensifier response, undesirable effects can be observed and quantified with regards to the consequence on the resulting range measurements, and the optimal operating conditions can be selected to minimize these disturbances. The characterization process utilizes a pulsed laser source to temporally probe the gain of the image intensifier. The laser is pulsed at a repetition rate slightly different to the image intensifier modulation frequency, producing a continuous phase shift between the two signals. A charge coupled device samples the image intensifier output, capturing the response over a complete modulation period. Deficiencies in our measured response are clearly identifiable and simple modifications to the configuration of our electrical driver circuit improve the modulation performance

    A robust 2.4 GHz time-of-arrival based ranging system with sub-meter accuracy: feasibility study and realization of low power CMOS receiver

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    Draadloze sensornetwerken worden meer en meer aangewend om verschillende soorten informatie te verzamelen. De locatie, waar deze informatie verzameld is, is een belangerijke eigenschap en voor sommige toepassingen, zoals het volgen van personen of goederen, zelfs de meest belangrijke en mogelijkmakende factor. Om de positie van een sensor te bepalen, is een technologie nodig die de afstand tot een gekend referentiepunt schat. Door verschillende afstandsmetingen te combineren, is het mogelijk de absolute locatie van de node te berekenen

    Built-in-self-test of RF front-end circuitry

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    Fuelled by the ever increasing demand for wireless products and the advent of deep submicron CMOS, RF ICs have become fairly commonplace in the semiconductor market. This has given rise to a new breed of Systems-On-Chip (SOCs) with RF front-ends tightly integrated along with digital, analog and mixed signal circuitry. However, the reliability of the integrated RF front-end continues to be a matter of significant concern and considerable research. A major challenge to the reliability of RF ICs is the fact that their performance is also severely degraded by wide tolerances in on-chip passives and package parasitics, in addition to process related faults. Due to the absence of contact based testing solutions in embedded RF SOCs (because the very act of probing may affect the performance of the RF circuit), coupled with the presence of very few test access nodes, a Built In Self Test approach (BiST) may prove to be the most efficient test scheme. However due to the associated challenges, a comprehensive and low-overhead BiST methodology for on-chip testing of RF ICs has not yet been reported in literature. In the current work, an approach to RF self-test that has hitherto been unexplored both in literature and in the commercial arena is proposed. A sensitive current monitor has been used to extract variations in the supply current drawn by the circuit-under-test (CUT). These variations are then processed in time and frequency domain to develop signatures. The acquired signatures can then be mapped to specific behavioral anomalies and the locations of these anomalies. The CUT is first excited by simple test inputs that can be generated on-chip. The current monitor extracts the corresponding variations in the supply current of the CUT, thereby creating signatures that map to various performance metrics of the circuit. These signatures can then be post-processed by low overhead on-chip circuitry and converted into an accessible form. To be successful in the RF domain any BIST architecture must be minimally invasive, reliable, offer good fault coverage and present low real estate and power overheads. The current-based self-test approach successfully addresses all these concerns. The technique has been applied to RF Low Noise Amplifiers, Mixers and Voltage Controlled Oscillators. The circuitry and post-processing techniques have also been demonstrated in silicon (using the IBM 0.25 micron RF CMOS process). The entire self-test of the RF front-end can be accomplished with a total test time of approximately 30µs, which is several orders of magnitude better than existing commercial test schemes

    Characterizing an image intensifier in an full-field range image system

    Get PDF
    We are developing a high precision full-field range imaging system. An integral component in this system is an image intensifier, which is modulated at frequencies up to 100 MHz. The range measurement precision is dictated by the image intensifier performance, in particular, the achievable modulation frequency, modulation depth, and waveform shape. By characterizing the image intensifier response, undesirable effects can be observed and quantified with regards to the consequence on the resulting range measurements, and the optimal operating conditions can be selected to minimize these disturbances. The characterization process utilizes a pulsed laser source to temporally probe the gain of the image intensifier. The laser is pulsed at a repetition rate slightly different to the image intensifier modulation frequency, producing a continuous phase shift between the two signals. A charge coupled device samples the image intensifier output, capturing the response over a complete modulation period. Deficiencies in our measured response are clearly identifiable and simple modifications to the configuration of our electrical driver circuit improve the modulation performance

    52-GHz Millimetre-Wave PLL Synthesizer

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