Forward Body Biased Low Power 4.0-10.6 GHz Wideband Low Noise Amplifier

A forward body biased low power Low Noise Amplifier (LNA) is designed using Common Gate (CG) topology. By using current reuse technique between the first stage and second stage Common Source topology accompanied with forward body biasing leads to low power dissipation. A series to parallel tank circuit at this stage leads to wideband design. A shunt peaking inductor at the drain terminal of second stage causes the higher frequency peak to increase leading to wide bandwidth. Two CS cascade stages are used to increase the overall gain of the proposed LNA with a buffer stage at the output for output matching. The proposed LNA attained maximum gain of 26.39 dB with a gain greater than 16 dB over entire range. The circuit gives reflection coefficient less than – 10 dB with NF 2.7 dB. With Vdd of 0.925 V, a DC current of 8.32 mA is consumed giving 7.7 mW power consumption

Mixed Linearity Improvement Techniques for Ultra-wideband Low Noise Amplifier

We present the linearization of an ultra-wideband low noise amplifier (UWB-LNA) operating from 2GHz to 11GHz through combining two linearization methods. The used linearization techniques are the combination of post-distortion cancellation and derivative-superposition linearization methods. The linearized UWB-LNA shows an improved linearity (IIP3) of +12dBm, a minimum noise figure (NFmin.) of 3.6dB, input and output insertion losses (S11 and S22)  below -9dB over the entire working bandwidth, midband gain of 6dB at 5.8GHz, and overall circuit power consumption of 24mW supplied from a 1.5V voltage source. Both UWB-LNA and linearized UWB-LNA designs are verified and simulated with ADS2016.01 software using BSIM3v3 TSMC 180nm CMOS model files. In addition, the linearized UWB-LNA performance is compared with other recent state-of-the-art LNAs

Characterization of 28 nm FDSOI MOS and application to the design of a low-power 2.4 GHz LNA

IoT is expected to connect billions of devices all over world in the next years, and in a near future, it is expected to use LR-WPAN in a wide variety of applications. Not all the devices will require of high performance but will require of low power hungry systems since most of them will be powered with a battery. Conventional CMOS technologies cannot cover these needs even scaling it to very small regimes, which appear other problems. Hence, new technologies are emerging to cover the needs of this devices. One promising technology is the UTBB FDSOI, which achieves good performance with very good energy efficiency. This project characterizes this technology to obtain a set of parameters of interest for analog/RF design. Finally, with the help of a low-power design methodology (gm/Id approach), a design of an ULP ULV LNA is performed to check the suitability of this technology for IoT

Ultra-Wideband CMOS Transceiver Front-End for Bio-Medical Radar Sensing

Since the Federal Communication Commission released the unlicensed 3.1-10.6 GHz frequency band for commercial use in early 2002, the ultra wideband (UWB) has developed from an emerging technology into a mainstream research area. The UWB technology, which utilizes wide spectrum, opens a new era of possibility for practical applications in radar sensing, one of which is the human vital sign monitoring. The aim of this thesis is to study and research the possibility of a new generation humanrespiration monitoring sensor using UWB radar technology and to develop a new prototype of UWB radar sensor for system-on-chip solutions in CMOS technology. In this thesis, a lowpower Gaussian impulse UWB mono-static radar transceiver architecture is presented. The UWB Gaussian pulse transmitter and receiver are implemented and fabricated using 90nm CMOS technology. Since the energy of low order Gaussian pulse is mostly condensed at lower frequency, in order to transmit the pulse in a very efficient way, higher order Gaussian derivative pulses are desired as the baseband signal. This motivates the advancement of the design into UWB high-order pulse transmitter. Both the Gaussian impulse UWB transmitter and Gaussian higher-order impulse UWB transmitter take the low-power and high-speed advantage of digital circuit to generate different waveforms. The measurement results are analyzed and discussed. This thesis also presents a low-power UWB mono-static radar transceiver architecture exploiting the full benefit of UWB bandwidth in radar sensing applications. The transceiver includes a full UWB band transmitter, an UWB receiver front-end, and an on-chip diplexer. The non-coherent UWB transmitter generates pulse modulated baseband signals at different carrier frequencies within the designated 3-10 GHz band using a digitally controlled pulse generator. The test shows the proposed radar transceiver can detect the human respiration pattern within 50 cm distance. The applications of this UWB radar sensing solution in commercialized standard CMOS technology include constant breathing pattern monitoring for gated radiation therapy, realtime monitoring of patients, and any other breathing monitoring. The research paves the way to wireless technology integration with health care and bio-sensor network

Survey on individual components for a 5 GHz receiver system using 130 nm CMOS technology

La intención de esta tesis es recopilar información desde un punto de vista general sobre los diferentes tipos de componentes utilizados en un receptor de señales a 5 GHz utilizando tecnología CMOS. Se ha realizado una descripción y análisis de cada uno de los componentes que forman el sistema, destacando diferentes tipos de configuraciones, figuras de mérito y otros parámetros. Se muestra una tabla resumen al final de cada sección, comparando algunos diseños que se han ido presentando a lo largo de los años en conferencias internacionales de la IEEE.The intention of this thesis is to gather information from an overview point about the different types of components used in a 5 GHz receiver using CMOS technology. A review of each of the components that form the system has been made, highlighting different types of configurations, figure of merits and parameters. A summary table is shown at the end of each section, comparing many designs that have been presented over the years at international conferences of the IEEE.Departamento de Ingeniería Energética y FluidomecánicaGrado en Ingeniería en Electrónica Industrial y Automátic

LOW-POWER IMPULSE-RADIO ULTRA-WIDEBAND TECHNIQUES FOR BIOMEDICAL APPLICATIONS.

Ph.DDOCTOR OF PHILOSOPH

Parametric analog signal amplification applied to nanoscale cmos wireless digital transceivers

Thesis presented in partial fulfillment of the requirements for the degree of Doctor of Philosophy in the subject of Electrical and Computer Engineering by the Universidade Nova de Lisboa,Faculdade de Ciências e TecnologiaSignal amplification is required in almost every analog electronic system. However noise is also present, thus imposing limits to the overall circuit performance, e.g., on the sensitivity of the radio transceiver. This drawback has triggered a major research on the field, which has been producing several solutions to achieve amplification with minimum added noise. During the Fifties, an interesting out of mainstream path was followed which was based on variable reactance instead of resistance based amplifiers. The principle of these parametric circuits permits to achieve low noise amplifiers since the controlled variations of pure reactance elements is intrinsically noiseless. The amplification is based on a mixing effect which enables energy transfer from an AC pump source to other related signal frequencies. While the first implementations of these type of amplifiers were already available at that time, the discrete-time version only became visible more recently. This discrete-time version is a promising technique since it is well adapted to the mainstream nanoscale CMOS technology. The technique itself is based on the principle of changing the surface potential of the MOS device while maintaining the transistor gate in a floating state. In order words, the voltage amplification is achieved by changing the capacitance value while maintaining the total charge unchanged during an amplification phase. Since a parametric amplifier is not intrinsically dependent on the transconductance of the MOS transistor, it does not directly suffer from the intrinsic transconductance MOS gain issues verified in nanoscale MOS technologies. As a consequence, open-loop and opamp free structures can further emerge with this additional contribution. This thesis is dedicated to the analysis of parametric amplification with special emphasis on the MOS discrete-time implementation. The use of the latter is supported on the presentation of several circuits where the MOS Parametric Amplifier cell is well suited: small gain amplifier, comparator, discrete-time mixer and filter, and ADC. Relatively to the latter, a high speed time-interleaved pipeline ADC prototype is implemented in a,standard 130 nm CMOS digital technology from United Microelectronics Corporation (UMC). The ADC is fully based on parametric MOS amplification which means that one could achieve a compact and MOS-only implementation. Furthermore, any high speed opamp has not been used in the signal path, being all the amplification steps implemented with open-loop parametric MOS amplifiers. To the author’s knowledge, this is first reported pipeline ADC that extensively used the parametric amplification concept.Fundação para a Ciência e Tecnologia through the projects SPEED, LEADER and IMPAC

Ultra-Wideband Transceiver with Error Correction for Cortical Interfaces in NanometerCMOS Process

This dissertation reports a high-speed wideband wireless transmission solution for the tight power constraints of cortical interface application. The proposed system deploysImpulse Radio Ultra-wideband (IR-UWB) technique to achieve very high-rate communication. However, impulse radio signals suffer from significant attenuation within the body,and power limitations force the use of very low-power receiver circuits which introduce additional noise and jitter. Moreover, the coils’ self-resonance has to be suppressed to minimize the pulse distortion and inter-symbol interference, adding significant attenuation. To compensate these losses, an Error correction code (ECC) layer is added for functioning reliably to the system. The performance evaluation is made by modeling a pair of physically fabricated coils, and the results show that the ECC is essential to obtain the system’s reliability. Furthermore, the gm/ID methodology, which is based on the complete exploration ofall inversion regions that the transistors are biased, is studied and explored for optimizingthe system at the circuit-level. Specific focuses are on the RF blocks: the low noise am-plifier (LNA) and the injection-locked voltage controlled oscillator (IL-VCO). Through the analytical deduction of the circuit’s features as the function of the gm/ID for each transistor, it is possible to select the optimum operating region for the circuit to achieve the target specification. Other circuit blocks, including the phase shifter, frequency divider,mixer, etc. are also described and analyzed. The prototype is fabricated in a 65-nm CMOS(Complementary Metal-Oxide-Semiconductor) process

A Review of CMOS Low Noise Amplifier for UWB System

A number of CMOS low noise amplifier (LNA) design for ultra-wideband (UWB) application had been produced with a various topology and techniques from year 2004 to 2016. The performance of LNA such as frequency bandwidth, noise figure, input and output matching and gain depend with the choice of the topology and technique used. Among the techniques introduced are current reuse, common source, resistive feedback, common gate, Chebyshev filter, distributed amplifier, folded cascade and negative feedback. This paper presents the collection of review about design of low noise amplifier used for UWB application in term of topology circuit. Thus, the problem and limitation of the CMOS LNA for UWB application are reviewed. Furthermore, recent developments of CMOS LNAs are examined and a comparison of the performance criteria of various topologies is presented

High frequency of low noise amplifier architecture for WiMAX application: A review

The low noise amplifier (LNA) circuit is exceptionally imperative as it promotes and initializes general execution performance and quality of the mobile communication system. LNA's design in radio frequency (R.F.) circuit requires the trade-off numerous imperative features' including gain, noise figure (N.F.), bandwidth, stability, sensitivity, power consumption, and complexity. Improvements to the LNA's overall performance should be made to fulfil the worldwide interoperability for microwave access (WiMAX) specifications' prerequisites. The development of front-end receiver, particularly the LNA, is genuinely pivotal for long-distance communications up to 50 km for a particular system with particular requirements. The LNA architecture has recently been designed to concentrate on a single transistor, cascode, or cascade constrained in gain, bandwidth, and noise figure