280 research outputs found

    Design of Energy-Efficient A/D Converters with Partial Embedded Equalization for High-Speed Wireline Receiver Applications

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    As the data rates of wireline communication links increases, channel impairments such as skin effect, dielectric loss, fiber dispersion, reflections and cross-talk become more pronounced. This warrants more interest in analog-to-digital converter (ADC)-based serial link receivers, as they allow for more complex and flexible back-end digital signal processing (DSP) relative to binary or mixed-signal receivers. Utilizing this back-end DSP allows for complex digital equalization and more bandwidth-efficient modulation schemes, while also displaying reduced process/voltage/temperature (PVT) sensitivity. Furthermore, these architectures offer straightforward design translation and can directly leverage the area and power scaling offered by new CMOS technology nodes. However, the power consumption of the ADC front-end and subsequent digital signal processing is a major issue. Embedding partial equalization inside the front-end ADC can potentially result in lowering the complexity of back-end DSP and/or decreasing the ADC resolution requirement, which results in a more energy-effcient receiver. This dissertation presents efficient implementations for multi-GS/s time-interleaved ADCs with partial embedded equalization. First prototype details a 6b 1.6GS/s ADC with a novel embedded redundant-cycle 1-tap DFE structure in 90nm CMOS. The other two prototypes explain more complex 6b 10GS/s ADCs with efficiently embedded feed-forward equalization (FFE) and decision feedback equalization (DFE) in 65nm CMOS. Leveraging a time-interleaved successive approximation ADC architecture, new structures for embedded DFE and FFE are proposed with low power/area overhead. Measurement results over FR4 channels verify the effectiveness of proposed embedded equalization schemes. The comparison of fabricated prototypes against state-of-the-art general-purpose ADCs at similar speed/resolution range shows comparable performances, while the proposed architectures include embedded equalization as well

    A 1.67 pJ/Conversion-step 8-bit SAR-Flash ADC Architecture in 90-nm CMOS Technology

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    A novice advanced architecture of 8-bit analog todigital converter is introduced and analyzed in this work. Thestructure of proposed ADC is based on the sub-ranging ADCarchitecture in which a 4-bit resolution flash-ADC is utilized. Theproposed ADC architecture is designed by employing a comparatorwhich is equipped with common mode current feedback andgain boosting technique (CMFD-GB) and a residue amplifier. Theproposed 8 bits ADC structure can achieve the speed of 140 megasamplesper second. The proposed ADC architecture is designedat a resolution of 8 bits at 10 MHz sampling frequency. DNL andINL values of the proposed design are -0.94/1.22 and -1.19/1.19respectively. The ADC design dissipates a power of 1.24 mWwith the conversion speed of 0.98 ns. The magnitude of SFDRand SNR from the simulations at Nyquist input is 39.77 and 35.62decibel respectively. Simulations are performed on a SPICE basedtool in 90 nm CMOS technology. The comparison shows betterperformance for the proposed ADC design in comparison toother ADC architectures regarding speed, resolution and powerconsumption

    A 1.67 pJ/Conversion-step 8-bit SAR-Flash ADC Architecture in 90-nm CMOS Technology

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    A novice advanced architecture of 8-bit analog todigital converter is introduced and analyzed in this work. Thestructure of proposed ADC is based on the sub-ranging ADCarchitecture in which a 4-bit resolution flash-ADC is utilized. Theproposed ADC architecture is designed by employing a comparatorwhich is equipped with common mode current feedback andgain boosting technique (CMFD-GB) and a residue amplifier. Theproposed 8 bits ADC structure can achieve the speed of 140 megasamplesper second. The proposed ADC architecture is designedat a resolution of 8 bits at 10 MHz sampling frequency. DNL andINL values of the proposed design are -0.94/1.22 and -1.19/1.19respectively. The ADC design dissipates a power of 1.24 mWwith the conversion speed of 0.98 ns. The magnitude of SFDRand SNR from the simulations at Nyquist input is 39.77 and 35.62decibel respectively. Simulations are performed on a SPICE basedtool in 90 nm CMOS technology. The comparison shows betterperformance for the proposed ADC design in comparison toother ADC architectures regarding speed, resolution and powerconsumption

    Wideband CMOS Data Converters for Linear and Efficient mmWave Transmitters

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    With continuously increasing demands for wireless connectivity, higher\ua0carrier frequencies and wider bandwidths are explored. To overcome a limited transmit power at these higher carrier frequencies, multiple\ua0input multiple output (MIMO) systems, with a large number of transmitters\ua0and antennas, are used to direct the transmitted power towards\ua0the user. With a large transmitter count, each individual transmitter\ua0needs to be small and allow for tight integration with digital circuits. In\ua0addition, modern communication standards require linear transmitters,\ua0making linearity an important factor in the transmitter design.In this thesis, radio frequency digital-to-analog converter (RF-DAC)-based transmitters are explored. They shift the transition from digital\ua0to analog closer to the antennas, performing both digital-to-analog\ua0conversion and up-conversion in a single block. To reduce the need for\ua0computationally costly digital predistortion (DPD), a linear and wellbehaved\ua0RF-DAC transfer characteristic is desirable. The combination\ua0of non-overlapping local oscillator (LO) signals and an expanding segmented\ua0non-linear RF-DAC scaling is evaluated as a way to linearize\ua0the transmitter. This linearization concept has been studied both for\ua0the linearization of the RF-DAC itself and for the joint linearization of\ua0the cascaded RF-DAC-based modulator and power amplifier (PA) combination.\ua0To adapt the linearization, observation receivers are needed.\ua0In these, high-speed analog-to-digital converters (ADCs) have a central\ua0role. A high-speed ADC has been designed and evaluated to understand\ua0how concepts used to increase the sample rate affect the dynamic performance

    Voltage-to-Time Converter for High-Speed Time-Based Analog-to-Digital Converters

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    In modern complementary metal oxide semiconductor (CMOS) technologies, the supply voltage scales faster than the threshold voltage (Vth) of the transistors in successive smaller nodes. Moreover, the intrinsic gain of the transistors diminishes as well. Consequently, these issues increase the difficulty of designing higher speed and larger resolution analog-to-digital converters (ADCs) employing voltage-domain ADC architectures. Nevertheless, smaller transistor dimensions in state-of-the-art CMOS technologies leads to reduced capacitance, resulting in lower gate delays. Therefore, it becomes beneficial to first convert an input voltage to a 'time signal' using a voltage-to-time converter (VTC), instead of directly converting it into a digital output. This 'time-signal' could then be converted to a digital output through a time-to-digital converter (TDC) for complete analog-to-digital conversion. However, the overall performance of such an ADC will still be limited to the performance level of the voltage-to-time conversion process. Hence, this thesis presents the design of a linear VTC for a high-speed time-based ADC in 28 nm CMOS process. The proposed VTC consists of a sample-and-hold (S/H) circuit, a ramp generator and a comparator to perform the conversion of the input signal from the voltage to the time domain. Larger linearity is attained by integrating a constant current (with high output impedance) over a capacitor, generating a linear ramp. The VTC operates at 256 MSPS consuming 1.3 mW from 1 V supply with a full-scale 1 V pk-pk differential input signal, while achieving a time-domain output signal with a spurious-free-dynamic-range (SFDR) of 77 dB and a signal-to-noise-and-distortion ratio (SNDR) of 56 dB at close to Nyquist frequency (f = 126.5 MHz). The proposed VTC attains an output range of 2.7 ns, which is the highest linear output range for a VTC at this speed, published to date

    Ring-oscillator with multiple transconductors for linear analog-to-digital conversion

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    This paper proposes a new circuit-based approach to mitigate nonlinearity in open-loop ring-oscillator-based analog-to-digital converters (ADCs). The approach consists of driving a current-controlled oscillator (CCO) with several transconductors connected in parallel with different bias conditions. The current injected into the oscillator can then be properly sized to linearize the oscillator, performing the inverse current-to-frequency function. To evaluate the approach, a circuit example has been designed in a 65-nm CMOS process, leading to a more than 3-ENOB enhancement in simulation for a high-swing differential input voltage signal of 800-mVpp, with considerable less complex design and lower power and expected area in comparison to state-of-the-art circuit based solutions. The architecture has also been checked against PVT and mismatch variations, proving to be highly robust, requiring only very simple calibration techniques. The solution is especially suitable for high-bandwidth (tens of MHz) medium-resolution applications (10–12 ENOBs), such as 5G or Internet-of-Things (IoT) devices.This research was funded by Project TEC2017-82653-R, Spain
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