LPDDR5의 외장 자가 테스트를 위한 고속 송신기의 설계

학위논문(석사) -- 서울대학교대학원 : 공과대학 전기·정보공학부, 2022.2. 정덕균.To overcome the speed gap between Automatic Test Equipment (ATE) and memory, the concept of Built-out Self-test (BOST) was introduced. This thesis presents the design of a transmitter for BOST of LPDDR5. It transmits high-speed DQS and WCK to DRAM while receiving low-speed clocks from ATE. Since they don’t always have clock-toggle, a digital block generates some data patterns. Also, by phase interpolators, phases of the outputs are shifted by desired. The analog part of the transmitter consists of phase interpolators, serializers, and drivers. Phase interpolators and drivers are designed in a current mode to be resistant to supply noise. The divider of the serializer is newly proposed so that the timings of all outputs are the same. In addition, the time it takes to receive enabling signals from ATE and transmit outputs to DRAM is constant. As a result, the transmitter sends DQS and WCK with data patterns to DRAM at the desired timing. The proposed transmitter is fabricated in a 40 nm CMOS process. 1 TX lane consumes 31.4 mW and occupies 0.06 mm2. Measured DQS has a swing of 230 mV and an RMS jitter of 770 fs at 10 Gb/s with 50 Ω termination. And WCK has a swing of 185 mV and an RMS jitter of 894 fs at 10 Gb/s with 40 Ω termination.자동 테스트 장비 (ATE)와 메모리 간의 속도 차이를 극복하기 위해 외장 자가 테스트 (BOST) 개념이 도입되었다. 본 논문은 LPDDR5의 BOST를 위한 송신기 설계를 제시한다. 송신기는 ATE에서 저속 클럭을 받아서 고속 DQS와 WCK를 DRAM에 전송한다. 출력에 항상 클럭 토글만 있는 것은 아니므로 데이터 패턴이 디지털 블록에서 생성된다. 또한 위상 보간기로 출력의 위상을 원하는 대로 움직인다. 송신기의 아날로그 부분은 위상 보간기, 시리얼라이저, 드라이버로 구성된다. 위상 보간기와 드라이버는 공급 노이즈에 견고하도록 전류 모드로 설계되었다. 시리얼라이저의 디바이더가 새롭게 제안되어서 모든 출력의 타이밍이 같다. 또한 ATE에서 활성화 신호를 받아서 DRAM으로 출력을 전송하는데 걸리는 시간도 일정하다. 그 결과 송신기는 데이터 패턴이 있는 DQS와 WCK를 원하는 타이밍에 DRAM으로 전송한다. 제안된 송신기는 40 nm CMOS 공정으로 제작되었다. 송신기의 하나의 레인은 31.4 mW를 소비하고 0.06mm2를 차지한다. 측정된 DQS는 50 Ω 터미네이션일 때 10 Gb/s에서 230 mV의 스윙과 770 fs의 RMS 지터를 가진다. 그리고 WCK는 40 Ω 터미네이션일 때 10 Gb/s에서 185 mV의 스윙과 894 fs의 RMS 지터를 갖는다.ABSTRACT I CONTENTS II LIST OF FIGURES IV LIST OF TABLES VII CHAPTER 1 INTRODUCTION 1 1.1 MOTIVATION 1 1.2 THESIS ORGANIZATION 3 CHAPTER 2 BACKGROUND ON SERIAL LINK 4 2.1 OVERVIEW 4 2.2 BASIS OF MEMORY INTERFACE 7 2.3 BUILDING BLOCKS 9 2.3.1 PHASE INTERPOLATOR 9 2.3.2 SERIALIZER 14 2.3.3 DRIVER 18 CHAPTER 3 DESIGN OF TRANSMITTER FOR BOST 22 3.1 DESIGN CONSIDERATION 22 3.2 OVERALL ARCHITECTURE 24 3.3 CIRCUIT IMPLEMENTATION 26 3.3.1 CLOCK PATH 26 3.3.2 PHASE INTERPOLATOR 29 3.3.3 SERIALIZER 33 3.3.4 DRIVER 41 CHAPTER 4 MEASUREMENTS RESULTS 48 4.1 DIE PHOTOMICROGRAPH 48 4.2 MEASUREMENT SETUP 49 4.3 MEASUREMENT RESULTS 51 4.4 PERFORMANCE SUMMARY 57 CHAPTER 5 CONCLUSION 59 BIBLIOGRAPHY 60 초 록 63석

Diseño del módulo transmisor serial de datos de sistema SerDes para Protocolo PCI express 1

Serial communication protocols are developing and growing faster than any other communications protocols; this due to the economic advantages they offer because they use less communications channels, also the use of differential pairing techniques using two complementary signals that helps reduce the electromagnetic emissions and susceptibility, however, their complexity is higher than other available communications protocols. This technical report documents the design process of a serial transmitter with amplitude, pre-emphasis and programmable impedance coupling, the topology used for this implementation is the segmented self-series terminated transmitters (SSSTT) which manage the functions just described above, it does this efficiently, with low area use and lower power consumption than other conventional structures. The technology used is IBM 180nm CMOS technology (process IBM cmrf7sf) with MOSIS license. The process of design is from bottom-up methodology, because all the cells used are composed from repetitive basic cells; schematic designs were developed and tested first from basic to complex cells, using test benches. The layout of each cell is full custom; no standard cells were used because this is an analog design, despite the digital cell composition of it. For this first approach, only LVS tests were performed because individual cells are going to change their initial topology at the moment they are initially placed until the final layout site is determined, complex cells are built for the complete application. The final result was the design of a transmitter cell for one channel (+Tx) at schematic and layout level, verified with LVS test; DRC and other post layout evaluations will be performed during next design stage due to time constrains. The other channel (-Tx) is the duplication of channel +Tx.Consejo Nacional de Ciencia y Tecnologí

Design of energy-efficient high-speed wireline transceiver

Energy efficiency has become the most important performance metric of integrated circuits used in many applications ranging from mobile devices to high-performance processors. The power problem permeates both computing and communication systems alike. Especially in the era of Big Data, continuously growing demand for higher communication bandwidth is driving the need for energy-efficient high-speed I/O serial links. However, the rate at which the energy efficiency of serial links is improving is much slower than the rate at which the required data transfer bandwidth is increasing. This dissertation explores two design approaches for energy-efficient communication systems. The first design approach maximizes the energy efficiency of a transceiver without any performance loss, and as a prototype, a source-synchronous multi-Gb/s transceiver that achieves excellent energy efficiency lower than 0.3pJ/bit is presented. To this end, the proposed transceiver employs aggressive supply voltage scaling, and multiplexed transmitter and receiver synchronized by low-rate multi-phase clocks are adopted to achieve high data rate even at a supply voltage close to the device threshold voltage. Phase spacing errors resulting from device mismatches are corrected using a self-calibration scheme. The proposed phase calibration method uses a single digital delay-locked loop (DLL) for calibrating all the phases, which makes the calibration process insensitive to the supply voltage level. Thanks to this technique, the proposed multi-Gb/s transceiver operates robustly and energy-efficiently at a very low supply voltage. Fabricated in a 65nm CMOS process, the energy efficiency and data rate of the prototype transceiver vary from 0.29pJ/bit to 0.58pJ/bit and 1Gb/s to 6Gb/s, respectively, as the supply voltage is varied from 0.45V to 0.7V. In the second approach, observing that the data traffic in a real system is bursty, a full-rate burst-mode transceiver that achieves rapid on/off operation needed for energy-proportional systems is presented. By injecting input data edges into the oscillator embedded in a classical type-II digital clock and data recovery (CDR) circuit, the proposed receiver achieves instantaneous phase-locking and input jitter filtering simultaneously. In other words, the proposed CDR combines the advantages of conventional feed-forward and feedback architectures to achieve energy-proportional operation. By controlling the number of data edges injected into the oscillator, both the jitter transfer bandwidth and the jitter tolerance corner are accurately controlled. The feedback loop also corrects for any frequency error and helps improve the CDR's immunity to oscillator frequency drift during the power-on and -off states. This also improves the CDR's tolerance to consecutive identical digits present in the input data. Fabricated in a 90nm CMOS process, the prototype receiver instantaneously locks onto the very first data edge and consumes 6.1mW at 2.2Gb/s. Owing to its short power-on time, the overall transceiver's energy efficiency varies only from 5.4pJ/bit to 10.7pJ/bit when the effective data rate is varied from 2.2Gb/s to 0.22Gb/s

고속 DRAM 인터페이스를 위한 전압 및 온도에 둔감한 클록 패스와 위상 오류 교정기 설계

학위논문 (박사) -- 서울대학교 대학원 : 공과대학 전기·정보공학부, 2021. 2. 정덕균.To cope with problems caused by the high-speed operation of the dynamic random access memory (DRAM) interface, several approaches are proposed that are focused on the clock path of the DRAM. Two delay-locked loop (DLL) based schemes, a forwarded-clock (FC) receiver (RX) with self-tracking loop and a quadrature error corrector, are proposed. Moreover, an open-loop based scheme is presented for drift compensation in the clock distribution. The open-loop scheme consumes less power consumption and reduces design complexity. The FC RX uses DLLs to compensate for voltage and temperature (VT) drift in unmatched memory interfaces. The self-tracking loop consists of two-stage cascaded DLLs to operate in a DRAM environment. With the write training and the proposed DLL, the timing relationship between the data and the sampling clock is always optimal. The proposed scheme compensates for delay drift without relying on data transitions or re-training. The proposed FC RX is fabricated in 65-nm CMOS process and has an active area containing 4 data lanes of 0.0329 mm2. After the write training is completed at the supply voltage of 1 V, the measured timing margin remains larger than 0.31-unit interval (UI) when the supply voltage drifts in the range of 0.94 V and 1.06 V from the training voltage, 1 V. At the data rate of 6.4 Gb/s, the proposed FC RX achieves an energy efficiency of 0.45 pJ/bit. Contrary to the aforementioned scheme, an open-loop-based voltage drift compensation method is proposed to minimize power consumption and occupied area. The overall clock distribution is composed of a current mode logic (CML) path and a CMOS path. In the proposed scheme, the architecture of the CML-to-CMOS converter (C2C) and the inverter is changed to compensate for supply voltage drift. The bias generator provides bias voltages to the C2C and inverters according to supply voltage for delay adjustment. The proposed clock tree is fabricated in 40 nm CMOS process and the active area is 0.004 mm2. When the supply voltage is modulated by a sinusoidal wave with 1 MHz, 100 mV peak-to-peak swing from the center of 1.1 V, applying the proposed scheme reduces the measured root-mean-square (RMS) jitter from 3.77 psRMS to 1.61 psRMS. At 6 GHz output clock, the power consumption of the proposed scheme is 11.02 mW. A DLL-based quadrature error corrector (QEC) with a wide correction range is proposed for the DRAM whose clocks are distributed over several millimeters. The quadrature error is corrected by adjusting delay lines using information from the phase error detector. The proposed error correction method minimizes increased jitter due to phase error correction by setting at least one of the delay lines in the quadrature clock path to the minimum delay. In addition, the asynchronous calibration on-off scheme reduces power consumption after calibration is complete. The proposed QEC is fabricated in 40 nm CMOS process and has an active area of 0.048 mm2. The proposed QEC exhibits a wide correctable error range of 101.6 ps and the remaining phase errors are less than 2.18° from 0.8 GHz to 2.3 GHz clock. At 2.3 GHz, the QEC contributes 0.53 psRMS jitter. Also, at 2.3 GHz, the power consumption is reduced from 8.89 mW to 3.39 mW when the calibration is off.본 논문에서는 동적 랜덤 액세스 메모리 (DRAM)의 속도가 증가함에 따라 클록 패스에서 발생할 수 있는 문제에 대처하기 위한 세 가지 회로들을 제안하였다. 제안한 회로들 중 두 방식들은 지연동기루프 (delay-locked loop) 방식을 사용하였고 나머지 한 방식은 면적과 전력 소모를 줄이기 위해 오픈 루프 방식을 사용하였다. DRAM의 비정합 수신기 구조에서 데이터 패스와 클록 패스 간의 지연 불일치로 인해 전압 및 온도 변화에 따라 셋업 타임 및 홀드 타임이 줄어드는 문제를 해결하기 위해 지연동기루프를 사용하였다. 제안한 지연동기루프 회로는 DRAM 환경에서 동작하도록 두 개의 지연동기루프로 나누었다. 또한 초기 쓰기 훈련을 통해 데이터와 클록을 타이밍 마진 관점에서 최적의 위치에 둘 수 있다. 따라서 제안하는 방식은 데이터 천이 정보가 필요하지 않다. 65-nm CMOS 공정을 이용하여 만들어진 칩은 6.4 Gb/s에서 0.45 pJ/bit의 에너지 효율을 가진다. 또한 1 V에서 쓰기 훈련 및 지연동기루프를 고정시키고 0.94 V에서 1.06 V까지 공급 전압이 바뀌었을 때 타이밍 마진은 0.31 UI보다 큰 값을 유지하였다. 다음으로 제안하는 회로는 클록 분포 트리에서 전압 변화로 인해 클록 패스의 지연이 달라지는 것을 앞서 제시한 방식과 달리 오픈 루프 방식으로 보상하였다. 기존 클록 패스의 인버터와 CML-to-CMOS 변환기의 구조를 변경하여 바이어스 생성 회로에서 생성한 공급 전압에 따라 바뀌는 바이어스 전압을 가지고 지연을 조절할 수 있게 하였다. 40-nm CMOS 공정을 이용하여 만들어진 칩의 6 GHz 클록에서의 전력 소모는 11.02 mW로 측정되었다. 1.1 V 중심으로 1 MHz, 100 mV 피크 투 피크를 가지는 사인파 성분으로 공급 전압을 변조하였을 때 제안한 방식에서의 지터는 기존 방식의 3.77 psRMS에서 1.61 psRMS로 줄어들었다. DRAM의 송신기 구조에서 다중 위상 클록 간의 위상 오차는 송신된 데이터의 데이터 유효 창을 감소시킨다. 이를 해결하기 위해 지연동기루프를 도입하게 되면 증가된 지연으로 인해 위상이 교정된 클록에서 지터가 증가한다. 본 논문에서는 증가된 지터를 최소화하기 위해 위상 교정으로 인해 증가된 지연을 최소화하는 위상 교정 회로를 제시하였다. 또한 유휴 상태에서 전력 소모를 줄이기 위해 위상 오차를 교정하는 회로를 입력 클록과 비동기식으로 끌 수 있는 방법 또한 제안하였다. 40-nm CMOS 공정을 이용하여 만들어진 칩의 위상 교정 범위는 101.6 ps이고 0.8 GHz 부터 2.3 GHz까지의 동작 주파수 범위에서 위상 교정기의 출력 클록의 위상 오차는 2.18°보다 작다. 제안하는 위상 교정 회로로 인해 추가된 지터는 2.3 GHz에서 0.53 psRMS이고 교정 회로를 껐을 때 전력 소모는 교정 회로가 켜졌을 때인 8.89 mW에서 3.39 mW로 줄어들었다.Chapter 1 Introduction 1 1.1 Motivation 1 1.2 Thesis Organization 4 Chapter 2 Background on DRAM Interface 5 2.1 Overview 5 2.2 Memory Interface 7 Chapter 3 Background on DLL 11 3.1 Overview 11 3.2 Building Blocks 15 3.2.1 Delay Line 15 3.2.2 Phase Detector 17 3.2.3 Charge Pump 19 3.2.4 Loop filter 20 Chapter 4 Forwarded-Clock Receiver with DLL-based Self-tracking Loop for Unmatched Memory Interfaces 21 4.1 Overview 21 4.2 Proposed Separated DLL 25 4.2.1 Operation of the Proposed Separated DLL 27 4.2.2 Operation of the Digital Loop Filter in DLL 31 4.3 Circuit Implementation 33 4.4 Measurement Results 37 4.4.1 Measurement Setup and Sequence 38 4.4.2 VT Drift Measurement and Simulation 40 Chapter 5 Open-loop-based Voltage Drift Compensation in Clock Distribution 46 5.1 Overview 46 5.2 Prior Works 50 5.3 Voltage Drift Compensation Method 52 5.4 Circuit Implementation 57 5.5 Measurement Results 61 Chapter 6 Quadrature Error Corrector with Minimum Total Delay Tracking 68 6.1 Overview 68 6.2 Prior Works 70 6.3 Quadrature Error Correction Method 73 6.4 Circuit Implementation 82 6.5 Measurement Results 88 Chapter 7 Conclusion 96 Bibliography 98 초록 102Docto

Design Techniques for Energy Efficient Multi-GB/S Serial I/O Transceivers

Total I/O bandwidth demand is growing in high-performance systems due to the emergence of many-core microprocessors and in mobile devices to support the next generation of multi-media features. High-speed serial I/O energy efficiency must improve in order to enable continued scaling of these parallel computing platforms in applications ranging from data centers to smart mobile devices. The first work, a low-power forwarded-clock I/O transceiver architecture is presented that employs a high degree of output/input multiplexing, supply-voltage scaling with data rate, and low-voltage circuit techniques to enable low-power operation. The transmitter utilizes a 4:1 output multiplexing voltage-mode driver along with 4-phase clocking that is efficiently generated from a passive poly-phase filter. The output driver voltage swing is accurately controlled from 100-200 mV_(ppd) using a low-voltage pseudo-differential regulator that employs a partial negative-resistance load for improved low frequency gain. 1:8 input de-multiplexing is performed at the receiver equalizer output with 8 parallel input samplers clocked from an 8-phase injection-locked oscillator that provides more than 1UI de-skew range. Low-power high-speed serial I/O transmitters which include equalization to compensate for channel frequency dependent loss are required to meet the aggressive link energy efficiency targets of future systems. The second work presents a low power serial link transmitter design that utilizes an output stage which combines a voltage-mode driver, which offers low static-power dissipation, and current-mode equalization, which offers low complexity and dynamic-power dissipation. The utilization of current-mode equalization decouples the equalization settings and termination impedance, allowing for a significant reduction in pre-driver complexity relative to segmented voltage-mode drivers. Proper transmitter series termination is set with an impedance control loop which adjusts the on-resistance of the output transistors in the driver voltage-mode portion. Further reductions in dynamic power dissipation are achieved through scaling the serializer and local clock distribution supply with data rate. Finally, it presents that a scalable quarter-rate transmitter employs an analog-controlled impedance-modulated 2-tap voltage-mode equalizer and achieves fast power-state transitioning with a replica-biased regulator and ILO clock generation. Capacitively-driven 2 mm global clock distribution and automatic phase calibration allows for aggressive supply scaling

Equalized on-chip interconnect : modeling, analysis, and design

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.Cataloged from PDF version of thesis.Includes bibliographical references (p. 115-118).This thesis work explores the use of equalization techniques to improve throughput and reduce power consumption of on-chip interconnect. A theoretical model for an equalized on-chip interconnect is first suggested to provide mathematical formulation for the link behavior. Based on the model, a fast-design space exploration methodology is demonstrated to search for the optimal link design parameters (wire and circuit) and to generate the optimal performance-power trade-off curve for the equalized interconnects. This thesis also proposes new circuit techniques, which improve the revealed demerits of the conventional circuit topologies. The proposed charge-injection transmitter directly conducts pre-emphasis current from the supply into the channel, eliminating the power overhead of analog current subtraction in the conventional transmit pre-emphasis, while significantly relaxing the driver coefficient accuracy requirements. The transmitter utilizes a power efficient nonlinear driver by compensating non-linearity with pre-distorted equalization coefficients. A trans-impedance amplifier at the receiver achieves low static power consumption, large signal amplitude, and high bandwidth by mitigating limitations of purely-resistive termination. A test chip is fabricated in 90-nm bulk CMOS technology and tested over a 10 mm, 2[micro]m pitched on-chip differential wire. The transceiver consumes 0.37-0.63 pJ/b with 2-6 Gb/s/ch.by Byungsub Kim.Ph.D

Analysis and Design of High Speed Serial Interfaces for Automotive Applications

The demand for an enriched end-user experience and increased performance in next generation electronic applications is never ending, and it is a common trend for a wide spectrum of applications owing to different markets, like computing, mobile communication and automotive. For this reason High Speed Serial Interface have become widespread components for nowadays electronics with a constant demand for power reduction and data rate increase. In the frame of gigabit serial systems, the work discussed in this thesis develops in two directions: on one hand, the aim is to support the continuous data rate increase with the development of novel link modeling approaches that will be employed for system level evaluation and as support in the design and characterization phases. On the other hand, the design considerations and challenges in the implementation of the transmitter, one of the most delicate blocks for the signal integrity performance of the link, are central. The first part of the activity regarding link performance predictions lead to the development of an enhanced statistical simulation approach, capable to account for the transmitter waveform shape in the ISI analysis, a characteristic that is missed by the available state-ofthe- art simulation approaches. The proposed approach has been extensively tested by comparison with traditional simulation approaches (Spice-like simulators) and validated against experimental characterization of a test system, with satisfactory results. The second part of the activity consists in the design of a high speed transmitter in a deeply scaled CMOS technology, spanning from the concept of the circuit, its implementation and characterization. Targets of the design are to achieve a data rate of 5 Gb/s with a minimum voltage swing of 800 mV, thus doubling the data rate of the current transmitter implementation, and reduce the power dissipation adopting a voltage mode architecture. The experimental characterization of the fabricated lot draws a twofold picture, with some of the performance figures showing a very good qualitative and quantitative agreement with pre-silicon simulations, and others revealing a poor performance level, especially for the eye diagram. Investigation of the root causes by the analysis of the physical silicon design, of the bonding scheme of the prototypes and of the pre-silicon simulations is reported. Guidelines for the redesign of the circuit are also given.Nel panorama delle applicazioni elettroniche il miglioramento delle performance di un prodotto da una generazione alla successiva ha lo scopo di offrire all\u2019utilizzatore finale nuove funzioni e migliorare quelle esistenti. Negli ultimi anni grazie al costante avanzamento della tecnologia integrata, si \ue8 assistito ad un enorme sviluppo della capacit\ue0 computazionale dei dispositivi in tutti i segmenti di mercato, quali ad esempio l\u2019information technology, la comunicazione mobile e l\u2019automotive. La conseguente necessit\ue0 di mettere in comunicazione dispostivi diversi all\u2019interno della stessa applicazione e di traferire grosse quantit\ue0 di dati ha provocato una capillare diffusione delle interfacce seriali ad alta velocit\ue0, o High Speed Serial Interfaces (HSSIs). La necessit\ue0 di ridurre il consumo di potenza e aumentare il bit rate per questo tipo di applicazioni \ue8 diventata dunque un ambito di ricerca di estremo interesse. Il lavoro discusso in questa tesi si colloca nell\u2019ambito della trasmissione di dati seriali a bit rate superiori ad 1Gb/s e si sviluppa in due direzioni: da un lato, a sostegno del continuo aumento del bit rate nelle nuove generazioni di interfacce, \ue8 stato affrontato lo sviluppo di nuovi approcci di modellazione del sistema, che possano essere impiegati nella valutazione delle prestazioni dell\u2019interfaccia e a supporto delle fasi di progettazione e di caratterizzazione. Dall\u2019altro lato, si \ue8 focalizzata l\u2019attenzione sulle sfide e sulle problematiche inerenti il progetto di uno dei blocchi pi\uf9 delicati per le prestazioni del sistema, il trasmettitore. La prima parte della tesi ha come oggetto lo sviluppo di un approccio di simulazione statistico innovativo, in grado di includere nell\u2019analisi degli effetti dell\u2019interferenza di intersimbolo anche la forma d\u2019onda prodotta all\u2019uscita del trasmettitore, una caratteristica che non \ue8 presente in altri approcci di simulazione proposti in letteratura. La tecnica proposta \ue8 ampiamente testata mediante il confronto con approcci di simulazione tradizionali (di tipo Spice) e mediante il confronto con la caratterizzazione sperimentale di un sistema di test, con risultati pienamente soddisfacenti. La seconda parte dell\u2019attivit\ue0 riguarda il progetto di un trasmettitore integrato high speed in tecnologia CMOS a 40nm e si estende dallo studio di fattibilit\ue0 del circuito fino alla sua realizzazione e caratterizzazione. Gli obiettivi riguardano il raggiungimento di un bit rate pari a 5 Gb/s, raddoppiando cos\uec il bit rate dell\u2019attuale implementazione, e di una tensione differenziale di uscita minima di 800mV (picco-picco) riducendo allo stesso tempo la potenza dissipata mediante l\u2019adozione di una architettura Voltage Mode. I risultati sperimentali ottenuti dal primo lotto fabbricato non delineano un quadro univoco: alcune performance mostrano un ottimo accordo qualitativo e quantitativo con le simulazioni pre-fabbricazione, mentre prestazioni non soddisfacenti sono state ottenute in particolare per il diagramma ad occhio. Grazie all\u2019analisi del layout del prototipo, del bonding tra silicio e package e delle simulazioni pre-fabbricazione \ue8 stato possibile risalire ai fattori responsabili del degrado delle prestazioni rispetto alla previsioni pre-fabbricazione, permettendo inoltre di delineare le linee guida da seguire nella futura progettazione di un nuovo prototipo

메모리 인터페이스를 위한 20Gbps급 직렬화 송수신기 설계

학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2013. 8. 정덕균.Various types of serial link for current and future memory interface are presented in this thesis. At first, PHY design for commercial GDDR3 memory is proposed. GDDR3 PHY is consists of read path, write path, command path. Write path and command path calibrate skew by using VDL (Variable delay line), while read path calibrates skew by using DLL (Delay locked loop) and VDL. There are four data channels and one command/address channel. Each data channel consists of one clock signal (DQS) and eight data signals (DQ). Data channel operates in 1.2Gbps (1.08Gbps~1.2Gbps), and command/address channel operates 600Mbps (540Mbps~600Mbps). In particular, DLL design for high speed and for SSN (simultaneous switching noise) is concentrated in this thesis. Secondly, serial link design for silicon photonics is proposed. Silicon photonics is the strongest candidate for next generation memory interface. Modulator driver for modulator, TIA (trans-impedance amplifier) and LA (limiting amplifier) for photo diode design are discussed. It operates above 12.5Gbps but it consumes much power 7.2mW/Gbps (transmitter core), 2mW/Gbps (receiver core) because it is connected with optical device which has large parasitic capacitance. Overall receiver which includes CDR (clock and data recovery) is also implemented. Many chips are fabricated in 65nm, 0.13um CMOS process. Finally, electrical serial link for 20Gbps memory link is proposed. Overall architecture is forwarded clocking architecture, and is very simple and intuitive. It does not need additional synchronizer. This open loop delay matched stream line receiver finds optimum sampling point with DCDL (Digitally controlled delay line) controller and expects to consume low power structurally. Only two phase half rate clock is transmitted through clock channel, but half rate time interleaved way sampling is performed by aid of initial value settable PRBS chaser. A CMOS Chip is fabricated by 65nm process and it occupies 2500um x 2500um (transceiver). It is expected that about 2.6mW(2.4mW)/Gbps (transmitter), 4.1mW(2.7mW)/Gbps (receiver). Power consumption improvement is expected in advanced process.ABSTRACT I CONTENTS V LIST OF FIGURES VII LIST OF TABLES XII CHAPTER 1 INTRODUCTION １ 1.1 MOTIVATION １ 1.2 THESIS ORGANIZATION １０ CHAPTER 2 A SERIAL LINK PHY DESIGN FOR GDDR3 MEMORY INTERFACE 11 2.1 INTRODUCTION 11 2.2 GDDR3 MEMORY INTERFACE ARCHITECTURE 12 2.2.1 READ PATH ARCHITECTURE 15 2.2.2 WRITE PATH ARCHITECTURE 17 2.2.3 COMMAND PATH ARCHITECTURE 19 2.3 DLL DESIGN FOR MEMORY INTERFACE 20 2.3.1 SSN(SIMULTANEOUS SWITCHING NOISE) 20 2.3.2 DLL ARCHITECTURE 21 2.3.3 VOLTAGE CONTROLLED DELAY LINE (VCDL) 22 2.3.4 HYSTERESIS COARSE LOCK DETECTOR (HCLD) 23 2.3.5 DYNAMIC PHASE DETECTOR AND CHARGE PUMP 26 2.4 SIMULATION RESULT 29 2.5 CONCLUSION 32 CHAPTER 3 OPTICAL FRONT-END SERIAL LINK DESIGN FOR 20 GBPS MEMORY INTERFACE 35 3.1 SILICON PHOTONICS INTRODUCTION 35 3.2 OPTICAL FRONT-END TRANSMITTER DESIGN 45 3.2.1 MODULATOR DRIVER REQUIREMENTS 46 3.2.2 MODULATOR DRIVER DESIGN - CURRENT MODE DRIVER 47 3.2.3 MODULATOR DRIVER DESIGN - CURRENT MODE DRIVER 50 3.3 OPTICAL FRONT-END RECEIVER DESIGN 55 3.3.1 OPTICAL RECEIVER BACK END REQUIREMENTS 56 3.3.2 OPTICAL RECEIVER BACK END DESIGN – TIA 57 3.3.3 OPTICAL RECEIVER BACK END DESIGN – LA, DRIVER 63 3.3.4 OPTICAL RECEIVER BACK END DESIGN – CDR 66 3.4 MEASUREMENT AND SIMULATION RESULTS 70 3.4.1 MEASUREMENT AND SIMULATION ENVIRONMENTS 70 3.4.2 OPTICAL TX FRONT END MEASUREMENT AND SIMULATION 74 3.4.3 OPTICAL RX FRONT END MEASUREMENT AND SIMULATION 77 3.4.4 OPTICAL RX BACK END SIMULATION 79 3.4.5 OPTICAL-ELECTRICAL OVERALL MEASUREMENTS 80 3.4.6 DIE PHOTO AND LAYOUT 82 3.5 CONCLUSION 86 CHAPTER 4 ELECTRICAL FRONT-END SERIAL LINK DESIGN FOR 20GBPS MEMORY INTERFACE 87 4.1 INTRODUCTION 87 4.2 CONVENTIONAL ELECTRICAL FRONT-END HIGH SPEED SERIAL LINK ARCHITECTURES 90 4.3 DESIGN CONCEPT AND PROPOSED SERIAL LINK ARCHITECTURE – OPEN LOOP DELAY MATCHED STREAM LINED RECEIVER. 95 4.3.1 PROPOSED OVERALL ARCHITECTURE 95 4.3.2 DESIGN CONCEPT 97 4.3.3 PROPOSED PROTOCOL AND LOCKING PROCESS 100 4.4 OPTIMUM POINT SEARCH ALGORITHM BASED DCDL CONTROLLER DESIGN 102 4.5 DCDL (DIGITALLY CONTROLLED DELAY LINE) DESIGN 112 4.6 DFE (DECISION FEEDBACK EQUALIZER) AND OTHER BLOCKS DESIGN 115 4.7 SIMULATION RESULTS 117 4.8 POWER EXPECTATION AND CHIP LAYOUT 122 4.9 CONCLUSION 124 CHAPTER 5 CONCLUSION 126 BIBLIOGRAPHY 128Docto