학위논문 (박사)-- 서울대학교 대학원 : 전기·컴퓨터공학부, 2013. 8. 정덕균.Various types of serial link for current and future memory interface are presented in this thesis.
At first, PHY design for commercial GDDR3 memory is proposed. GDDR3 PHY is consists of read path, write path, command path. Write path and command path calibrate skew by using VDL (Variable delay line), while read path calibrates skew by using DLL (Delay locked loop) and VDL. There are four data channels and one command/address channel. Each data channel consists of one clock signal (DQS) and eight data signals (DQ). Data channel operates in 1.2Gbps (1.08Gbps~1.2Gbps), and command/address channel operates 600Mbps (540Mbps~600Mbps). In particular, DLL design for high speed and for SSN (simultaneous switching noise) is concentrated in this thesis.
Secondly, serial link design for silicon photonics is proposed. Silicon photonics is the strongest candidate for next generation memory interface. Modulator driver for modulator, TIA (trans-impedance amplifier) and LA (limiting amplifier) for photo diode design are discussed. It operates above 12.5Gbps but it consumes much power 7.2mW/Gbps (transmitter core), 2mW/Gbps (receiver core) because it is connected with optical device which has large parasitic capacitance. Overall receiver which includes CDR (clock and data recovery) is also implemented. Many chips are fabricated in 65nm, 0.13um CMOS process.
Finally, electrical serial link for 20Gbps memory link is proposed. Overall architecture is forwarded clocking architecture, and is very simple and intuitive. It does not need additional synchronizer. This open loop delay matched stream line receiver finds optimum sampling point with DCDL (Digitally controlled delay line) controller and expects to consume low power structurally. Only two phase half rate clock is transmitted through clock channel, but half rate time interleaved way sampling is performed by aid of initial value settable PRBS chaser. A CMOS Chip is fabricated by 65nm process and it occupies 2500um x 2500um (transceiver). It is expected that about 2.6mW(2.4mW)/Gbps (transmitter), 4.1mW(2.7mW)/Gbps (receiver). Power consumption improvement is expected in advanced process.ABSTRACT I
CONTENTS V
LIST OF FIGURES VII
LIST OF TABLES XII
CHAPTER 1 INTRODUCTION １
1.1 MOTIVATION １
1.2 THESIS ORGANIZATION １０
CHAPTER 2 A SERIAL LINK PHY DESIGN FOR GDDR3 MEMORY INTERFACE 11
2.1 INTRODUCTION 11
2.2 GDDR3 MEMORY INTERFACE ARCHITECTURE 12
2.2.1 READ PATH ARCHITECTURE 15
2.2.2 WRITE PATH ARCHITECTURE 17
2.2.3 COMMAND PATH ARCHITECTURE 19
2.3 DLL DESIGN FOR MEMORY INTERFACE 20
2.3.1 SSN(SIMULTANEOUS SWITCHING NOISE) 20
2.3.2 DLL ARCHITECTURE 21
2.3.3 VOLTAGE CONTROLLED DELAY LINE (VCDL) 22
2.3.4 HYSTERESIS COARSE LOCK DETECTOR (HCLD) 23
2.3.5 DYNAMIC PHASE DETECTOR AND CHARGE PUMP 26
2.4 SIMULATION RESULT 29
2.5 CONCLUSION 32
CHAPTER 3 OPTICAL FRONT-END SERIAL LINK DESIGN FOR 20 GBPS MEMORY INTERFACE 35
3.1 SILICON PHOTONICS INTRODUCTION 35
3.2 OPTICAL FRONT-END TRANSMITTER DESIGN 45
3.2.1 MODULATOR DRIVER REQUIREMENTS 46
3.2.2 MODULATOR DRIVER DESIGN - CURRENT MODE DRIVER 47
3.2.3 MODULATOR DRIVER DESIGN - CURRENT MODE DRIVER 50
3.3 OPTICAL FRONT-END RECEIVER DESIGN 55
3.3.1 OPTICAL RECEIVER BACK END REQUIREMENTS 56
3.3.2 OPTICAL RECEIVER BACK END DESIGN – TIA 57
3.3.3 OPTICAL RECEIVER BACK END DESIGN – LA, DRIVER 63
3.3.4 OPTICAL RECEIVER BACK END DESIGN – CDR 66
3.4 MEASUREMENT AND SIMULATION RESULTS 70
3.4.1 MEASUREMENT AND SIMULATION ENVIRONMENTS 70
3.4.2 OPTICAL TX FRONT END MEASUREMENT AND SIMULATION 74
3.4.3 OPTICAL RX FRONT END MEASUREMENT AND SIMULATION 77
3.4.4 OPTICAL RX BACK END SIMULATION 79
3.4.5 OPTICAL-ELECTRICAL OVERALL MEASUREMENTS 80
3.4.6 DIE PHOTO AND LAYOUT 82
3.5 CONCLUSION 86
CHAPTER 4 ELECTRICAL FRONT-END SERIAL LINK DESIGN FOR 20GBPS MEMORY INTERFACE 87
4.1 INTRODUCTION 87
4.2 CONVENTIONAL ELECTRICAL FRONT-END HIGH SPEED SERIAL LINK ARCHITECTURES 90
4.3 DESIGN CONCEPT AND PROPOSED SERIAL LINK ARCHITECTURE – OPEN LOOP DELAY MATCHED STREAM LINED RECEIVER. 95
4.3.1 PROPOSED OVERALL ARCHITECTURE 95
4.3.2 DESIGN CONCEPT 97
4.3.3 PROPOSED PROTOCOL AND LOCKING PROCESS 100
4.4 OPTIMUM POINT SEARCH ALGORITHM BASED DCDL CONTROLLER DESIGN 102
4.5 DCDL (DIGITALLY CONTROLLED DELAY LINE) DESIGN 112
4.6 DFE (DECISION FEEDBACK EQUALIZER) AND OTHER BLOCKS DESIGN 115
4.7 SIMULATION RESULTS 117
4.8 POWER EXPECTATION AND CHIP LAYOUT 122
4.9 CONCLUSION 124
CHAPTER 5 CONCLUSION 126
BIBLIOGRAPHY 128Docto
