A 1.2-V 10- µW NPN-Based Temperature Sensor in 65-nm CMOS With an Inaccuracy of 0.2 °C (3σ) From 70 °C to 125 °C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 ◦C (3¾) and a trimmed inaccuracy of ±0.2 ◦C (3¾) over the temperature range from −70 ◦C to 125 ◦C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm2

Circuit Techniques for Low-Power and Secure Internet-of-Things Systems

The coming of Internet of Things (IoT) is expected to connect the physical world to the cyber world through ubiquitous sensors, actuators and computers. The nature of these applications demand long battery life and strong data security. To connect billions of things in the world, the hardware platform for IoT systems must be optimized towards low power consumption, high energy efficiency and low cost. With these constraints, the security of IoT systems become a even more difficult problem compared to that of computer systems. A new holistic system design considering both hardware and software implementations is demanded to face these new challenges. In this work, highly robust and low-cost true random number generators (TRNGs) and physically unclonable functions (PUFs) are designed and implemented as security primitives for secret key management in IoT systems. They provide three critical functions for crypto systems including runtime secret key generation, secure key storage and lightweight device authentication. To achieve robustness and simplicity, the concept of frequency collapse in multi-mode oscillator is proposed, which can effectively amplify the desired random variable in CMOS devices (i.e. process variation or noise) and provide a runtime monitor of the output quality. A TRNG with self-tuning loop to achieve robust operation across -40 to 120 degree Celsius and 0.6 to 1V variations, a TRNG that can be fully synthesized with only standard cells and commercial placement and routing tools, and a PUF with runtime filtering to achieve robust authentication, are designed based upon this concept and verified in several CMOS technology nodes. In addition, a 2-transistor sub-threshold amplifier based "weak" PUF is also presented for chip identification and key storage. This PUF achieves state-of-the-art 1.65% native unstable bit, 1.5fJ per bit energy efficiency, and 3.16% flipping bits across -40 to 120 degree Celsius range at the same time, while occupying only 553 feature size square area in 180nm CMOS. Secondly, the potential security threats of hardware Trojan is investigated and a new Trojan attack using analog behavior of digital processors is proposed as the first stealthy and controllable fabrication-time hardware attack. Hardware Trojan is an emerging concern about globalization of semiconductor supply chain, which can result in catastrophic attacks that are extremely difficult to find and protect against. Hardware Trojans proposed in previous works are based on either design-time code injection to hardware description language or fabrication-time modification of processing steps. There have been defenses developed for both types of attacks. A third type of attack that combines the benefits of logical stealthy and controllability in design-time attacks and physical "invisibility" is proposed in this work that crosses the analog and digital domains. The attack eludes activation by a diverse set of benchmarks and evades known defenses. Lastly, in addition to security-related circuits, physical sensors are also studied as fundamental building blocks of IoT systems in this work. Temperature sensing is one of the most desired functions for a wide range of IoT applications. A sub-threshold oscillator based digital temperature sensor utilizing the exponential temperature dependence of sub-threshold current is proposed and implemented. In 180nm CMOS, it achieves 0.22/0.19K inaccuracy and 73mK noise-limited resolution with only 8865 square micrometer additional area and 75nW extra power consumption to an existing IoT system.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/138779/1/kaiyuan_1.pd

Thermal-Aware Networked Many-Core Systems

Advancements in IC processing technology has led to the innovation and growth happening in the consumer electronics sector and the evolution of the IT infrastructure supporting this exponential growth. One of the most difficult obstacles to this growth is the removal of large amount of heatgenerated by the processing and communicating nodes on the system. The scaling down of technology and the increase in power density is posing a direct and consequential effect on the rise in temperature. This has resulted in the increase in cooling budgets, and affects both the life-time reliability and performance of the system. Hence, reducing on-chip temperatures has become a major design concern for modern microprocessors. This dissertation addresses the thermal challenges at different levels for both 2D planer and 3D stacked systems. It proposes a self-timed thermal monitoring strategy based on the liberal use of on-chip thermal sensors. This makes use of noise variation tolerant and leakage current based thermal sensing for monitoring purposes. In order to study thermal management issues from early design stages, accurate thermal modeling and analysis at design time is essential. In this regard, spatial temperature profile of the global Cu nanowire for on-chip interconnects has been analyzed. It presents a 3D thermal model of a multicore system in order to investigate the effects of hotspots and the placement of silicon die layers, on the thermal performance of a modern ip-chip package. For a 3D stacked system, the primary design goal is to maximise the performance within the given power and thermal envelopes. Hence, a thermally efficient routing strategy for 3D NoC-Bus hybrid architectures has been proposed to mitigate on-chip temperatures by herding most of the switching activity to the die which is closer to heat sink. Finally, an exploration of various thermal-aware placement approaches for both the 2D and 3D stacked systems has been presented. Various thermal models have been developed and thermal control metrics have been extracted. An efficient thermal-aware application mapping algorithm for a 2D NoC has been presented. It has been shown that the proposed mapping algorithm reduces the effective area reeling under high temperatures when compared to the state of the art.Siirretty Doriast

Toward realizing power scalable and energy proportional high-speed wireline links

Growing computational demand and proliferation of cloud computing has placed high-speed serial links at the center stage. Due to saturating energy efficiency improvements over the last five years, increasing the data throughput comes at the cost of power consumption. Conventionally, serial link power can be reduced by optimizing individual building blocks such as output drivers, receiver, or clock generation and distribution. However, this approach yields very limited efficiency improvement. This dissertation takes an alternative approach toward reducing the serial link power. Instead of optimizing the power of individual building blocks, power of the entire serial link is reduced by exploiting serial link usage by the applications. It has been demonstrated that serial links in servers are underutilized. On average, they are used only 15% of the time, i.e. these links are idle for approximately 85% of the time. Conventional links consume power during idle periods to maintain synchronization between the transmitter and the receiver. However, by powering-off the link when idle and powering it back when needed, power consumption of the serial link can be scaled proportionally to its utilization. This approach of rapid power state transitioning is known as the rapid-on/off approach. For the rapid-on/off to be effective, ideally the power-on time, off-state power, and power state transition energy must all be close to zero. However, in practice, it is very difficult to achieve these ideal conditions. Work presented in this dissertation addresses these challenges. When this research work was started (2011-12), there were only a couple of research papers available in the area of rapid-on/off links. Systematic study or design of a rapid power state transitioning in serial links was not available in the literature. Since rapid-on/off with nanoseconds granularity is not a standard in any wireline communication, even the popular test equipment does not support testing any such feature, neither any formal measurement methodology was available. All these circumstances made the beginning difficult. However, these challenges provided a unique opportunity to explore new architectural techniques and identify trade-offs. The key contributions of this dissertation are as follows. The first and foremost contribution is understanding the underlying limitations of saturating energy efficiency improvements in serial links and why there is a compelling need to find alternative ways to reduce the serial link power. The second contribution is to identify potential power saving techniques and evaluate the challenges they pose and the opportunities they present. The third contribution is the design of a 5Gb/s transmitter with a rapid-on/off feature. The transmitter achieves rapid-on/off capability in voltage mode output driver by using a fast-digital regulator, and in the clock multiplier by accurate frequency pre-setting and periodic reference insertion. To ease timing requirements, an improved edge replacement logic circuit for the clock multiplier is proposed. Mathematical modeling of power-on time as a function of various circuit parameters is also discussed. The proposed transmitter demonstrates energy proportional operation over wide variations of link utilization, and is, therefore, suitable for energy efficient links. Fabricated in 90nm CMOS technology, the voltage mode driver, and the clock multiplier achieve power-on-time of only 2ns and 10ns, respectively. This dissertation highlights key trade-off in the clock multiplier architecture, to achieve fast power-on-lock capability at the cost of jitter performance. The fourth contribution is the design of a 7GHz rapid-on/off LC-PLL based clock multi- plier. The phase locked loop (PLL) based multiplier was developed to overcome the limita- tions of the MDLL based approach. Proposed temperature compensated LC-PLL achieves power-on-lock in 1ns. The fifth and biggest contribution of this dissertation is the design of a 7Gb/s embedded clock transceiver, which achieves rapid-on/off capability in LC-PLL, current-mode transmit- ter and receiver. It was the first reported design of a complete transceiver, with an embedded clock architecture, having rapid-on/off capability. Background phase calibration technique in PLL and CDR phase calibration logic in the receiver enable instantaneous lock on power-on. The proposed transceiver demonstrates power scalability with a wide range of link utiliza- tion and, therefore, helps in improving overall system efficiency. Fabricated in 65nm CMOS technology, the 7Gb/s transceiver achieves power-on-lock in less than 20ns. The transceiver achieves power scaling by 44x (63.7mW-to-1.43mW) and energy efficiency degradation by only 2.2x (9.1pJ/bit-to-20.5pJ/bit), when the effective data rate (link utilization) changes by 100x (7Gb/s-to-70Mb/s). The sixth and final contribution is the design of a temperature sensor to compensate the frequency drifts due to temperature variations, during long power-off periods, in the fast power-on-lock LC-PLL. The proposed self-referenced VCO-based temperature sensor is designed with all digital logic gates and achieves low supply sensitivity. This sensor is suitable for integration in processor and DRAM environments. The proposed sensor works on the principle of directly converting temperature information to frequency and finally to digital bits. A novel sensing technique is proposed in which temperature information is acquired by creating a threshold voltage difference between the transistors used in the oscillators. Reduced supply sensitivity is achieved by employing junction capacitance, and the overhead of voltage regulators and an external ideal reference frequency is avoided. The effect of VCO phase noise on the sensor resolution is mathematically evaluated. Fabricated in the 65nm CMOS process, the prototype can operate with a supply ranging from 0.85V to 1.1V, and it achieves a supply sensitivity of 0.034oC/mV and an inaccuracy of ±0.9oC and ±2.3oC from 0-100oC after 2-point calibration, with and without static nonlinearity correction, respectively. It achieves a resolution of 0.3oC, resolution FoM of 0.3(nJ/conv)res2 , and measurement (conversion) time of 6.5μs

RF MEMS reference oscillators platform for wireless communications

A complete platform for RF MEMS reference oscillator is built to replace bulky quartz from mobile devices, thus reducing size and cost. The design targets LTE transceivers. A low phase noise 76.8 MHz reference oscillator is designed using material temperature compensated AlN-on-silicon resonator. The thesis proposes a system combining piezoelectric resonator with low loading CMOS cross coupled series resonance oscillator to reach state-of-the-art LTE phase noise specifications. The designed resonator is a two port fundamental width extensional mode resonator. The resonator characterized by high unloaded quality factor in vacuum is designed with low temperature coefficient of frequency (TCF) using as compensation material which enhances the TCF from - 3000 ppm to 105 ppm across temperature ranges of -40˚C to 85˚C. By using a series resonant CMOS oscillator, phase noise of -123 dBc/Hz at 1 kHz, and -162 dBc/Hz at 1MHz offset is achieved. The oscillator’s integrated RMS jitter is 106 fs (10 kHz–20 MHz), consuming 850 μA, with startup time is 250μs, achieving a Figure-of-merit (FOM) of 216 dB. Electronic frequency compensation is presented to further enhance the frequency stability of the oscillator. Initial frequency offset of 8000 ppm and temperature drift errors are combined and further addressed electronically. A simple digital compensation circuitry generates a compensation word as an input to 21 bit MASH 1 -1-1 sigma delta modulator incorporated in RF LTE fractional N-PLL for frequency compensation. Temperature is sensed using low power BJT band-gap front end circuitry with 12 bit temperature to digital converter characterized by a resolution of 0.075˚C. The smart temperature sensor consumes only 4.6 μA. 700 MHz band LTE signal proved to have the stringent phase noise and frequency resolution specifications among all LTE bands. For this band, the achieved jitter value is 1.29 ps and the output frequency stability is 0.5 ppm over temperature ranges from -40˚C to 85˚C. The system is built on 32nm CMOS technology using 1.8V IO device

Ultra-low Power Circuits for Internet of Things (IOT)

Miniaturized sensor nodes offer an unprecedented opportunity for the semiconductor industry which led to a rapid development of the application space: the Internet of Things (IoT). IoT is a global infrastructure that interconnects physical and virtual things which have the potential to dramatically improve people's daily lives. One of key aspect that makes IoT special is that the internet is expanding into places that has been ever reachable as device form factor continue to decreases. Extremely small sensors can be placed on plants, animals, humans, and geologic features, and connected to the Internet. Several challenges, however, exist that could possibly slow the development of IoT. In this thesis, several circuit techniques as well as system level optimizations to meet the challenging power/energy requirement for the IoT design space are described. First, a fully-integrated temperature sensor for battery-operated, ultra-low power microsystems is presented. Sensor operation is based on temperature independent/dependent current sources that are used with oscillators and counters to generate a digital temperature code. Second, an ultra-low power oscillator designed for wake-up timers in compact wireless sensors is presented. The proposed topology separates the continuous comparator from the oscillation path and activates it only for short period when it is required. As a result, both low power tracking and generation of precise wake-up signal is made possible. Third, an 8-bit sub-ranging SAR ADC for biomedical applications is discussed that takes an advantage of signal characteristics. ADC uses a moving window and stores the previous MSBs voltage value on a series capacitor to achieve energy saving compared to a conventional approach while maintaining its accuracy. Finally, an ultra-low power acoustic sensing and object recognition microsystem that uses frequency domain feature extraction and classification is presented. By introducing ultra-low 8-bit SAR-ADC with 50fF input capacitance, power consumption of the frontend amplifier has been reduced to single digit nW-level. Also, serialized discrete Fourier transform (DFT) feature extraction is proposed in a digital back-end, replacing a high-power/area-consuming conventional FFT.PHDElectrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttps://deepblue.lib.umich.edu/bitstream/2027.42/137157/1/seojeong_1.pd

Solid State Circuits Technologies

The evolution of solid-state circuit technology has a long history within a relatively short period of time. This technology has lead to the modern information society that connects us and tools, a large market, and many types of products and applications. The solid-state circuit technology continuously evolves via breakthroughs and improvements every year. This book is devoted to review and present novel approaches for some of the main issues involved in this exciting and vigorous technology. The book is composed of 22 chapters, written by authors coming from 30 different institutions located in 12 different countries throughout the Americas, Asia and Europe. Thus, reflecting the wide international contribution to the book. The broad range of subjects presented in the book offers a general overview of the main issues in modern solid-state circuit technology. Furthermore, the book offers an in depth analysis on specific subjects for specialists. We believe the book is of great scientific and educational value for many readers. I am profoundly indebted to the support provided by all of those involved in the work. First and foremost I would like to acknowledge and thank the authors who worked hard and generously agreed to share their results and knowledge. Second I would like to express my gratitude to the Intech team that invited me to edit the book and give me their full support and a fruitful experience while working together to combine this book

Design of a Digital Temperature Sensor based on Thermal Diffusivity in a Nanoscale CMOS Technology

Temperature sensors are widely used in microprocessors to monitor on-chip temperature gradients and hot-spots, which are known to negatively impact reliability. Such sensors should be small to facilitate floor planning, fast to track millisecond thermal transients, and easy to trim to reduce the associated costs. Recently, it has been shown that thermal diffusivity (TD) sensors can meet these requirements. These sensors operate by digitalizing the temperature-dependent delay associated with the diffusion of heat pulses through an electro-thermal filter (ETF), which, in standard CMOS, can be readily implemented as a resistive heater surrounded by a thermopile. Unlike BJT-based temperature sensors, their accuracy actually improves with CMOS scaling, since it is mainly limited by the accuracy of the heather/thermopile spacing. In this work is presented the electrical design of an highly digital TD sensor in 0.13 µm CMOS with an accuracy better than 1 ºC resolution at with 1 kS/s sampling rate, and which compares favourably to state-of-the-art sensors with similar accuracy and sampling rates [1][2][3][4]. This advance is mainly enabled by the adoption of a highly digital CCO-based phasedomain ΔΣ ADC. The TD sensor presented consists of an ETF, a transconductance stage, a current-controlled oscillator (CCO) and a 6 bit digital counter. In order to be easily ported to nanoscale CMOS technologies, it is proposed to use a sigmadelta modulator based on a CCO as an alternative to traditional modulators. And since 70% of the sensor’s area is occupied by digital circuitry, porting the sensor to latest CMOS technologies process should reduce substantially the occupied die area, and thus reduce significantly the total sensor area

Current-mode processing based Temperature-to-Digital Converters for MEMS applications

This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mm²); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results.This thesis presents novel Temperature-to-Digital Converters (TDCs) designed and fabricated in CMOS technology. These integrated smart temperature sensing circuits are widely employed in the Micro-Electro-Mechanical Systems (MEMS) field in order to mitigate the impact of the ambient temperature on their performance. In this framework, the increasingly stringent demands of the market have led the cost-effectiveness specification of these compensation solutions to an higher and higher level, directly translating into the requirement of more and more compact designs (< 0.1 mm²); in addition to this, considering that the great majority of the systems whose thermal drift needs to be compensated is battery supplied, ultra-low energy-per-conversion (< 10 nJ) is another requirement of primary importance. This thesis provides a detailed description of two different test-chips (mas fuerte and es posible) that have been designed with this orientation and that are the result of three years of research activity; for both devices, the conception, design, layout and testing phases are all described in detail and are supported by simulation and measurement results