An Energy-Efficient Reconfigurable Mobile Memory Interface for Computing Systems

The critical need for higher power efficiency and bandwidth transceiver design has significantly increased as mobile devices, such as smart phones, laptops, tablets, and ultra-portable personal digital assistants continue to be constructed using heterogeneous intellectual properties such as central processing units (CPUs), graphics processing units (GPUs), digital signal processors, dynamic random-access memories (DRAMs), sensors, and graphics/image processing units and to have enhanced graphic computing and video processing capabilities. However, the current mobile interface technologies which support CPU to memory communication (e.g. baseband-only signaling) have critical limitations, particularly super-linear energy consumption, limited bandwidth, and non-reconfigurable data access. As a consequence, there is a critical need to improve both energy efficiency and bandwidth for future mobile devices.;The primary goal of this study is to design an energy-efficient reconfigurable mobile memory interface for mobile computing systems in order to dramatically enhance the circuit and system bandwidth and power efficiency. The proposed energy efficient mobile memory interface which utilizes an advanced base-band (BB) signaling and a RF-band signaling is capable of simultaneous bi-directional communication and reconfigurable data access. It also increases power efficiency and bandwidth between mobile CPUs and memory subsystems on a single-ended shared transmission line. Moreover, due to multiple data communication on a single-ended shared transmission line, the number of transmission lines between mobile CPU and memories is considerably reduced, resulting in significant technological innovations, (e.g. more compact devices and low cost packaging to mobile communication interface) and establishing the principles and feasibility of technologies for future mobile system applications. The operation and performance of the proposed transceiver are analyzed and its circuit implementation is discussed in details. A chip prototype of the transceiver was implemented in a 65nm CMOS process technology. In the measurement, the transceiver exhibits higher aggregate data throughput and better energy efficiency compared to prior works

ULTRA ENERGY-EFFICIENT SUB-/NEAR-THRESHOLD COMPUTING: PLATFORM AND METHODOLOGY

Ph.DDOCTOR OF PHILOSOPH

Design and analysis of SRAMs for energy harvesting systems

PhD ThesisAt present, the battery is employed as a power source for wide varieties of microelectronic systems ranging from biomedical implants and sensor net-works to portable devices. However, the battery has several limitations and incurs many challenges for the majority of these systems. For instance, the design considerations of implantable devices concern about the battery from two aspects, the toxic materials it contains and its lifetime since replacing the battery means a surgical operation. Another challenge appears in wire-less sensor networks, where hundreds or thousands of nodes are scattered around the monitored environment and the battery of each node should be maintained and replaced regularly, nonetheless, the batteries in these nodes do not all run out at the same time. Since the introduction of portable systems, the area of low power designs has witnessed extensive research, driven by the industrial needs, towards the aim of extending the lives of batteries. Coincidentally, the continuing innovations in the field of micro-generators made their outputs in the same range of several portable applications. This overlap creates a clear oppor-tunity to develop new generations of electronic systems that can be powered, or at least augmented, by energy harvesters. Such self-powered systems benefit applications where maintaining and replacing batteries are impossi-ble, inconvenient, costly, or hazardous, in addition to decreasing the adverse effects the battery has on the environment. The main goal of this research study is to investigate energy harvesting aware design techniques for computational logic in order to enable the capa- II bility of working under non-deterministic energy sources. As a case study, the research concentrates on a vital part of all computational loads, SRAM, which occupies more than 90% of the chip area according to the ITRS re-ports. Essentially, this research conducted experiments to find out the design met-ric of an SRAM that is the most vulnerable to unpredictable energy sources, which has been confirmed to be the timing. Accordingly, the study proposed a truly self-timed SRAM that is realized based on complete handshaking protocols in the 6T bit-cell regulated by a fully Speed Independent (SI) tim-ing circuitry. The study proved the functionality of the proposed design in real silicon. Finally, the project enhanced other performance metrics of the self-timed SRAM concentrating on the bit-line length and the minimum operational voltage by employing several additional design techniques.Umm Al-Qura University, the Ministry of Higher Education in the Kingdom of Saudi Arabia, and the Saudi Cultural Burea

The Design and Linearization of 60GHz Injection Locked Power Amplifier

The RF power amplifier is one of the most critical blocks of transceivers, as it is expected to provide a suitable output power with high gain, efficiency and linearity. In this paper, a 60-GHz power amplifier based on an injection locked structure is demonstrated in a standard 65 CMOS technology. The PA core consists of a cross-coupled pair of NMOS transistors with an NMOS current source. This structure can achieve large output power and high PAE, but with poor linearity performance. In order to improve the linearity, several linearization techniques are investigated, including adaptive biasing and predistortion. The results show that the adaptive biasing technique can enlarge the linear operation region, but results in poor AM-PM performance. By instead using the predistortion technique, the AM-PM performance can be improved, but the linear region only extends slightly. Considering theses two techniques different advantages, we combine them together to improve not only the linear region but also the AM-PM performance. Finally, a common source amplifier is added as the first stage. With proper bias, the linear operation region is then effectively extended by 7.3 dB. This two stage power amplifier achieves large output power, high linearity and high PAE simultaneously. It delivers a gain of 20dB, a Psat of 16.3dBm, a P1dB of 15.41dBm, and a PAE of 30%.Since the invention of radio-frequency (RF) wireless communication more than 100 years ago, mobile phones and other wireless communications products for civilian consumption have developed rapidly. Nowadays, the demand for larger high data rate and capacities is rising sharply. The traditional wireless bandwidth is no longer able to meet some high-rate applications requirement. However, 60GHz wireless communication system is our solution, and up to 7 GHz unlicensed wide band around 60GHz is open to use across much of the world. Furthermore, the power amplifier (PA) is a critical part of any transmitter to convert the signal to higher power and drive the antenna. For power amplifiers, efficiency and linearity are most important. Power amplifiers with low efficiency will result in high level of heat dissipation. Linearity is a measure of the signal distortion, which consists of gain compression (AM-AM distortion) and phase distortion (AM-PM distortion). In this thesis work, an injection locked power amplifier is used to reduce the input driving requirements and improve the efficiency. Simulations have been performed for implementation in 65nm standard CMOS, which is a low-cost technology for fabrication of integrated circuits (chips). The injection locked technique means that a self-oscillating circuit is forced to run at the same frequency as the input signal. Furthermore, an integrated balun is added to transfer between single-ended and differential signals. The results show that this PA can achieve high efficiency but with poor linearity performance. In order to improve the linearity, different linearization techniques are investigated, including adaptive biasing and predistortion. Adaptive biasing is a feedback technique. At high output levels, the power amplifier has less gain, which leads to signal distortion. The adaptive biasing unit can sense the output power in real time and adjust the bias. The bias is then increased at increased output power in order to restore the power gain at high output levels. Predistortion is another linearization technique. A predistorter, which has a gain expansion characteristic, is then introduced before the PA to compensate for its gain reduction. Then, considering the advantages of these two linearization techniques, we combine them together to achieve even better results. Finally, a two-stage power amplifier is proposed by adding a common source amplifier as the first stage. The first stage can also produce a gain boost at the high output levels, and this expansion gain can be made to match the second-stage gain reduction very well. The simulation results show that the amplifier can achieve high linearity and efficiency at the same time

Design and Analysis of Robust Low Voltage Static Random Access Memories.

Static Random Access Memory (SRAM) is an indispensable part of most modern VLSI designs and dominates silicon area in many applications. In scaled technologies, maintaining high SRAM yield becomes more challenging since they are particularly vulnerable to process variations due to 1) the minimum sized devices used in SRAM bitcells and 2) the large array sizes. At the same time, low power design is a key focus throughout the semiconductor industry. Since low voltage operation is one of the most effective ways to reduce power consumption due to its quadratic relationship to energy savings, lowering the minimum operating voltage (Vmin) of SRAM has gained significant interest. This thesis presents four different approaches to design and analyze robust low voltage SRAM: SRAM analysis method improvement, SRAM bitcell development, SRAM peripheral optimization, and advance device selection. We first describe a novel yield estimation method for bit-interleaved voltage-scaled 8-T SRAMs. Instead of the traditional trade-off between write and read, the trade-off between write and half select disturb is analyzed. In addition, this analysis proposes a method to find an appropriate Write Word-Line (WWL) pulse width to maximize yield. Second, low leakage 10-T SRAM with speed compensation scheme is proposed. During sleep mode of a sensor application, SRAM retaining data cannot be shut down so it is important to minimize leakage in SRAM. This work adopts several leakage reduction techniques while compensating performance. Third, adaptive write architecture for low voltage 8-T SRAMs is proposed. By adaptively modulating WWL width and voltage level, it is possible to achieve low power consumption while maintaining high yield without excessive performance degradation. Finally, low power circuit design based on heterojunction tunneling transistors (HETTs) is discussed. HETTs have a steep subthreshold swing beneficial for low voltage operation. Device modeling and design of logic and SRAM are proposed.Ph.D.Electrical EngineeringUniversity of Michigan, Horace H. Rackham School of Graduate Studieshttp://deepblue.lib.umich.edu/bitstream/2027.42/91569/1/daeyeonk_1.pd

Voltage controlled oscillator for mm-wave radio systems

Abstract. The advancement in silicon technology has accelerated the development of integrated millimeter-wave transceiver systems operating up to 100 GHz with sophisticated functionality at a reduced consumer cost. Due to the progress in the field of signal processing, frequency modulated continuous wave (FMCW) radar has become common in recent years. A high-performance local oscillator (LO) is required to generate reference signals utilized in these millimeter-wave radar transceivers. To accomplish this, novel design techniques in fundamental voltage controlled oscillators (VCO) are necessary to achieve low phase noise, wide frequency tuning range, and good power efficiency. Although integrated VCOs have been studied for decades, as we move higher in the radio frequency spectrum, there are new trade-offs in the performance parameters that require further characterization. The work described in this thesis aims to design a fully integrated fundamental VCO targeting to 150 GHz, i.e., D-Band. The purpose is to observe and analyze the design limitations at these high frequencies and their corresponding trade-offs during the design procedure. The topology selected for this study is the cross-coupled LC tank VCO. For the study, two design topologies were considered: a conventional cross-coupled LC tank VCO and an inductive divider cross-coupled LC tank VCO. The conventional LC tank VCO yields better performance in terms of phase noise and tuning range. It is observed that the VCO is highly sensitive to parasitic contributions by the transistors, and the layout interconnects, thus limiting the targeted frequency range. The dimensions of the LC tank and the transistors are selected carefully. Moreover, the VCO performance is limited by the low Q factor of the LC tank governed by the varactor that is degrading the phase noise performance and the tuning range, respectively. The output buffer loaded capacitance and the core power consumption of the VCO are optimized. The layout is drawn carefully with strategies to minimize the parasitic effects. Considering all the design challenges, a 126 GHz VCO with a tuning range of 3.9% is designed. It achieves FOMT (Figure-of-merit) of -172 dBc/Hz, and phase noise of -99.14 dBc/Hz at 10 MHz offset, Core power consumption is 8.9 mW from a 1.2 V supply. Just falling short of the targeted frequency, the design is suitable for FMCW radar applications for future technologies. The design was done using Silicon-on-Insulator (SOI) CMOS technology

Passive und aktive Radio Frequency Identification Tags im 60-GHz-Band

Die Einführung des millimeter-Wellen-Bandes eröffnet neue Perspektiven für die Radio Frequency Identification (RFID) Kommunikationssysteme. Der Enwurf des Systems im 60-GHz-Band ermöglicht die Implementierung der On-Chip Antenne und darüber hinaus die Implementierung eines RFID-Tags auf einem einzigen Chip. Dennoch ist es aufgrund der gesetzlichen Beschränkung der effektiven isotropen Strahlungsleistung (EIRP) des Lesegeräts und der erhöhten Freiraum-Dielektrikumsverluste eine Herausforderung, eine zuverlässige Kommunikationsreichweite von mehreren Millimetern zu erreichen. Neue Lösungen sind für jeden Block sowohl im Lesegerät als auch im Single-Chip-Tag erforderlich. Obwohl das Lesegerät batteriebetrieben ist, ist es immer noch eine Herausforderung, die maximal zulässigen 20 dBm IERP des Lesersenders energieeffizient zu erzeugen. Darüber hinaus sollte der Empfänger einen ausreichenden Dynamikbereich haben, um das vom Tag kommende Signal zu erkennen. Auf der Tag-Seite sind die Hauptherausforderungen das Co-Design der effizienten On-Chip-Antennen-Implementierung, die hochempfindliche Gleichrichter-Implementierung und das Rückkommunikationskonzept. Diese Arbeit konzentriert sich auf die Machbarkeitsstudie des Single-Chip-RFID-Tags und die Implementierung im Millimeterwellenbereich. Es werden zwei Rückkommunikationskonzepte untersucht - Backscattering-Rückkommunikation und eine Kommunikation unter Verwendung von Ultra-Low-Power (ULP) Radios. Beide werden in einem 22 nm FDSOI Prozess auf einem Substrat mit geringem Widerstand implementiert. Beide Tags arbeiten mit einer Versorgungsspannung von 0,4 V, um die Kommunikationsreichweite zu maximieren. Die Link-Budgets sind so ausgelegt, dass sie die regulatorischen Beschränkungen einhalten. Die Auswahl des Technologieknotens wird begründet. Verschiedene Aspekte im Zusammenhang mit der Technologie werden diskutiert, wie z. B. Geräteleistung, passiver Qualitätsfaktor, Leistungsdichte der Kondensatoren. Der Backscattering RFID-Tag wird zuerst entworfen, da er eine relativ einfachere Topologie hat. Die Probleme der Gleichrichterempfindlichkeit im Rahmen des analogen Frontends, der On-Chip-Antenneneffizienz und der konjugierten Anpassung beider werden untersucht. Eine Kommunikationsreichweite von 5 mm wird angestrebt und realisiert. Um die Kommunikationsreichweite weiter zu erhöhen, wird in der zweiten Phase ein Tag mit einer aktiven Rückkommunikation implementiert. Hier wird die Gleichrichterempfindlichkeit weiter verbessert. Es wird ein 0,4V ULP Radio entworfen, das sich die Antenne mit dem Gleichrichter über einen Single-Pole- Double-Through (SPDT) Schalter teilt. Ein Abstand von 2 cm erwies sich als realisierbar, wobei die gesetzlichen Bestimmungen eingehalten und der dynamische Bereich des Leseempfängers nicht überschritten wurde. Es wird die höchste normalisierte Kommunikationsreichweite pro Leser-EIRP erreicht. Weitere Verbesserungsmöglichkeiten werden diskutiert

無線センサネットワークのための超低消費電力と高感度CMOS RF受信機に関する研究

Wireless sensor networks (WSN) have been applied in wide range of applications and proved the more and more important contribution in the modern life. In order to evaluate a WSN, many metrics are considered such as cost, latency, power or quality of service. However, since the sensor nodes are usually deployed in large physical areas and inaccessible locations, the battery change becomes impossible. In this scenario, the power consumption is the most important metric. In a sensor node, the RF receiver is one of the communication devices, which consume a vast majority of power. Therefore, this thesis studies ultra low power RF receivers for the long lifetime of the sensor nodes. Currently, the WSNs use various frequency bands. However, for low power target, the sub-GHz frequency bands are preferred. In this study, ultra-low power 315 MHz and 920 MHz receivers will be proposed for short-range applications and long-range applications of the WSNs respectively. To achieve ultra-low power target, the thesis considers some issues in architecture, circuit design and fabrication technology for suitable choices. After considering different receiver architectures, the RF detection receiver with the On-Off-Keying (OOK) modulation is chosen. Then the thesis proposes solutions to reduce power consumption and concurrently guarantee high sensitivity for the receivers so that they can communicate at adequate distances for both short and long-range applications. First, a 920 MHz OOK receiver is designed for the long-range WSN applications. Typically, the RF amplifiers and local oscillators consume the most of power of RF receivers. In the RF detection receivers, the local oscillators are eliminated, however, the power consumption of the RF amplifiers is still dominant. By reducing the RF gain or removing the RF amplifier, the power consumption of the receivers can be reduced drastically. However, in this case the sensitivity is very limited. In order to overcome the trade-off between power consumption and sensitivity, the switched bias is applied to the RF amplifiers to reduce their power consumption substantially while guaranteeing high RF gain before RF detection. As a result, the receiver consumes only 53 W at 0.6 V supply with -82 dBm sensitivity at 10 kbps data rate. Next, an OOK receiver operating at 315 MHz for the short-range WSN applications with low complexity is proposed. In this receiver, the RF amplifier is controlled to operate intermittently for power reduction. Furthermore, taking advantage of the low carrier frequency, a comparator is used to convert the RF signal to a rail-to-rail stream and then data is demodulated in the digital domain. Therefore, no envelope detector or baseband amplifiers is required. The architecture of the receiver is verified by using discrete RF modules and FPGAs before it is designed on CMOS technology. By simulation with the physical layout, the 315 MHz OOK receiver consumes 27.6 W at 200 kbps and achieves -76.4 dBm sensitivity. Finally, the Synchronized-OOK (S-OOK) modulation scheme is proposed and then an S-OOK receiver operating in the 315 MHz frequency is developed to reduce power consumption more deeply. The S-OOK signal contains not only data but also clock information. By generating a narrow window, the RF front-end is enabled to receive signal only in a short period, therefore, power consumption of the receiver is reduced further. In addition, thank to the clock information contained in the input signal, the data and corresponding clock are demodulated simultaneously without a clock and data recovery circuit. The architecture of the S-OOK receiver is also verified by using discrete RF modules and FPGAs, then VLSI design is carried out. Physical layout simulation shows that the receiver can achieve -76.4 dBm sensitivity, consumes 8.39 W, 4.49 W, 1.36 W at 100 kbps, 50 kbps and 10 kbps respectively. In conclusion, with the objective is to look for solutions to minimize power consumption of receivers for extending the lifetime of sensor nodes while guaranteeing high sensitivity, this study proposed novel receiver architectures, which help reduce power consumption significantly. If using the coin battery CR2032 for power supply, the 920 MHz OOK receiver can work continuously in 1.45 years with communication distance of 259 meters; the 315 MHz OOK receivers can work continuously in 2.8 years with approximately 19 meters communication distance in free space. Whereas, the 315 MHz S-OOK receiver with the minimum power consumption of 1.36 W is suitable for batteryless sensor nodes.電気通信大学201