Sequential Adaptive Detection for In-Situ Transmission Electron Microscopy (TEM)

We develop new efficient online algorithms for detecting transient sparse signals in TEM video sequences, by adopting the recently developed framework for sequential detection jointly with online convex optimization [1]. We cast the problem as detecting an unknown sparse mean shift of Gaussian observations, and develop adaptive CUSUM and adaptive SSRS procedures, which are based on likelihood ratio statistics with post-change mean vector being online maximum likelihood estimators with $\ell_1$. We demonstrate the meritorious performance of our algorithms for TEM imaging using real data

A combined FEG-SEM and TEM study of silicon nanodot assembly

Nanodots forming dense assembly on a substrate are difficult to characterize in terms of size, density, morphology and cristallinity. The present study shows how valuable information can be obtained by a combination of electron microscopy techniques. A silicon nanodots deposit has been studied by Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) to estimate essentially the dot size and density, quantities emphasized because of their high interest for application. High resolution SEM indicates a density of 1.6 × 1012 dots/cm2 for a 5 nm to 10 nm dot size. TEM imaging using a phase retrieval treatment of a focus series gives a higher dot density (2 × 1012 dots/cm2) for a 5 nm dot size. High Resolution Transmission Electron Microscopy (HRTEM) indicates that the dots are crystalline which is confirmed by electron diffraction. According to HRTEM and electron diffraction, the dot size is about 3 nm which is significantly smaller than the SEM and TEM results. These differences are not contradictory but attributed to the fact that each technique is probing a different phenomenon. A core-shell structure for the dot is proposed which reconcile all the results. All along the study, Fourier transforms have been widely used under many aspects

Amorphous interface layer in thin graphite films grown on the carbon face of SiC

Cross-sectional transmission electron microscopy (TEM) is used to characterize an amorphous layer observed at the interface in graphite and graphene films grown via thermal decomposition of C-face 4H-SiC. The amorphous layer does not to cover the entire interface, but uniform contiguous regions span microns of cross-sectional interface. Annular dark field scanning transmission electron microscopy (ADF-STEM) images and electron energy loss spectroscopy (EELS) demonstrate that the amorphous layer is a carbon-rich composition of Si/C. The amorphous layer is clearly observed in samples grown at 1600{\deg}C for a range of growth pressures in argon, but not at 1500{\deg}C, suggesting a temperature-dependent formation mechanism

Microscopy of glazed layers formed during high temperature sliding wear at 750C

The evolution of microstructures in the glazed layer formed during high temperature sliding wear of Nimonic 80A against Stellite 6 at 750 ◦C using a speed of 0.314ms−1 under a load of 7N has been investigated using scanning electron microscopy (SEM), energy dispersive analysis by X-ray (EDX), X-ray diffraction (XRD) analysis, scanning tunnelling microscopy (STM) and transmission electron microscopy (TEM). The results indicate the formation of a wear resistant nano-structured glazed layer. The mechanisms responsible for the formation of the nano-polycrystalline glazed layer are discussed

TEM study of homoepitaxial diamond layers scheduled for high power devices: FIB method of sample preparation

Homoepitaxial diamond structure observation by transmission electron microscopy (TEM) is still a very hard job due to the difficulty in preparing electron transparent samples for the further observation. The present contribution details the experimental operations with their respective conditions step by step. Finally high resolution TEM (HREM) observations of a CVD grown epilayer on a unnintentionally doped HPHT (001) oriented substrate are present to show the high quality of the sample preparation method.4 page

Metal–oxide–diamond interface investigation by TEM: Toward MOS and Schottky power device behavior

Metal and oxide distribution in diamond metal–oxide– semiconductor (MOS) structures are characterized using several transmission electron microscopy (TEM) modes at nanometric scale. To understand their electrical behavior, oxygen distribution using electron energy loss spectroscopy (EELS) through the layer structure, high-resolution electron microscopy (HREM), and annular dark field (ADF) observations are reported. Oxide thickness variations, as well as oxygen content variations have been identified and characterized at an atomic resolution. The latter allows to understand the related electrical behavior as, for example, leakages or shortcuts.6 page

Transmission-electron-microscopy study of quasi-epitaxial tungsten-bronze (Sr2.5Ba2.5Nb10O30) thin film on perovskite (SrTiO3) single crystal

Strontium barium niobate (Sr2.5Ba2.5Nb10O30) thin films were deposited on (001) SrTiO3 single-crystalline substrates by pulsed laser deposition. The growth nature was investigated by transmission electron microscopy (TEM). Selected-area electron diffraction and high-resolution transmission electron microscopy revealed the existence of six types of grains. These grains grew on the substrate in a partially epitaxial fashion. Geometrical models were built, which were confirmed by TEM observations. Based on the TEM results and geometrical analysis, a crystallographic model was developed. The strain nature resulting from the growth columns is discussed in this repor