Gate-induced blueshift and quenching of photoluminescence in suspended single-walled carbon nanotubes

Gate-voltage effects on photoluminescence spectra of suspended single-walled carbon nanotubes are investigated. Photoluminescence microscopy and excitation spectroscopy are used to identify individual nanotubes and to determine their chiralities. Under an application of gate voltage, we observe slight blueshifts in the emission energy and strong quenching of photoluminescence. The blueshifts are similar for different chiralities investigated, suggesting extrinsic mechanisms. In addition, we find that the photoluminescence intensity quenches exponentially with gate voltage.Comment: 4 pages, 4 figure

Photoluminescence upconversion at GaAs/InGaP2 interfaces driven by a sequential two-photon absorption mechanism

This paper reports on the results of an investigation into the nature of photoluminescence upconversion at GaAs/InGaP2 interfaces. Using a dual-beam excitation experiment, we demonstrate that the upconversion in our sample proceeds via a sequential two-photon optical absorption mechanism. Measurements of photoluminescence and upconversion photoluminescence revealed evidence of the spatial localization of carriers in the InGaP2 material, arising from partial ordering of the InGaP2. We also observed the excitation of a two-dimensional electron gas at the GaAs/InGaP2 heterojunction that manifests as a high-energy shoulder in the GaAs photoluminescence spectrum. Furthermore, the results of upconversion photoluminescence excitation spectroscopy demonstrate that the photon energy onset of upconversion luminescence coincides with the energy of the two-dimensional electron gas at the GaAs/InGaP2 interface, suggesting that charge accumulation at the interface can play a crucial role in the upconversion process

Band structure and optical properties of germanium sheet polymers

The band structure of H-terminated Ge sheet polymers is calculated using density-functional theory in the local density approximation and compared to the optical properties of epitaxial polygermyne layers as determined from reflection, photoluminescence, and photoluminescence excitation measurements. A direct band gap of 1.7 eV is predicted and a near resonant excitation of the photoluminescence is observed experimentally close to this energy

Comparison of the photoluminescence properties of semiconductor quantum dots and non-blinking diamond nanoparticles. Observation of the diffusion of diamond nanoparticles in living cells

Long-term observations of photoluminescence at the single-molecule level were until recently very diffcult, due to the photobleaching of organic ?uorophore molecules. Although inorganic semiconductor nanocrystals can overcome this diffculty showing very low photobleaching yield, they suffer from photoblinking. A new marker has been recently introduced, relying on diamond nanoparticles containing photoluminescent color centers. In this work we compare the photoluminescence of single quantum dots (QDs) to the one of nanodiamonds containing a single-color center. Contrary to other markers, photoluminescent nanodiamonds present a perfect photostability and no photoblinking. At saturation of their excitation, nanodiamonds photoluminescence intensity is only three times smaller than the one of QDs. Moreover, the bright and stable photoluminescence of nanodiamonds allows wide field observations of single nanoparticles motion. We demonstrate the possibility of recording the tra jectory of such single particle in culture cells

Photoluminescence of nanocrystals embedded in oxide matrices

We used the theory of finite periodic systems to explain the photoluminescence spectra dependence on the average diameter of nanocrystals embedded in oxide matrices. Because of the broad matrix band gap, the photoluminescence response is basically determined by isolated nanocrystals and sequences of a few of them. With this model we were able to reproduce the shape and displacement of the experimentally observed photoluminescence spectra.Comment: 4 pages, 3 figure