1,548,642 research outputs found
Optimal Decentralized Protocols for Electric Vehicle Charging
We propose decentralized algorithms for optimally scheduling electric vehicle charging. The algorithms exploit the elasticity and controllability of electric vehicle related loads in order to fill the valleys in electric demand profile. We formulate a global optimization problem whose objective is to impose a generalized notion of valley-filling, study properties of the optimal charging profiles, and give decentralized offline and online algorithms to solve the problem. In each iteration of the proposed algorithms, electric vehicles choose their own charging profiles for the rest horizon according to the price profile broadcast by the utility, and the utility updates the price profile to guide their behavior. The offline algorithms are guaranteed to converge to optimal charging profiles irrespective of the specifications (e.g., maximum charging rate and deadline) of electric vehicles at the expense of a restrictive assumption that all electric vehicles are available for negotiation at the beginning of the planning horizon. The online algorithms relax this assumption by using a scalar prediction of future total charging demand at each time instance and yield near optimal charging profiles. The proposed algorithms need no coordination among the electric vehicles, hence their implementation requires low communication and computation capability. Simulation results are provided to support these results
Deep levels in a-plane, high Mg-content MgxZn1-xO epitaxial layers grown by molecular beam epitaxy
Deep level defects in n-type unintentionally doped a-plane MgxZn1−xO, grown by molecular beam epitaxy on r-plane sapphire were fully characterized using deep level optical spectroscopy (DLOS) and related methods. Four compositions of MgxZn1−xO were examined with x = 0.31, 0.44, 0.52, and 0.56 together with a control ZnO sample. DLOS measurements revealed the presence of five deep levels in each Mg-containing sample, having energy levels of Ec − 1.4 eV, 2.1 eV, 2.6 V, and Ev + 0.3 eV and 0.6 eV. For all Mg compositions, the activation energies of the first three states were constant with respect to the conduction band edge, whereas the latter two revealed constant activation energies with respect to the valence band edge. In contrast to the ternary materials, only three levels, at Ec − 2.1 eV, Ev + 0.3 eV, and 0.6 eV, were observed for the ZnO control sample in this systematically grown series of samples. Substantially higher concentrations of the deep levels at Ev + 0.3 eV and Ec − 2.1 eV were observed in ZnO compared to the Mg alloyed samples. Moreover, there is a general invariance of trap concentration of the Ev + 0.3 eV and 0.6 eV levels on Mg content, while at least and order of magnitude dependency of the Ec − 1.4 eV and Ec − 2.6 eV levels in Mg alloyed samples
Sprachrohr der Muslime im Westen: Tariq Ramadan und sein Konzept einer zeitgemäßen islamischen Ethik
Monte Carlo model of electron energy degradation in a CO2 atmosphere
A Monte Carlo model has been developed to study the degradation of <1000 eV
electrons in an atmosphere of CO2, which is one of the most abundant species in
Mars' and Venus' atmospheres. The e-CO2 cross sections are presented in an
assembled set along with their analytical representations. Monte Carlo
simulations are carried out at several energies to calculate the "yield
spectra", which embodied all the information related to electron degradation
process and can be used to calculate "yield" (or population) for any inelastic
process. The numerical yield spectra have been fitted analytically resulting in
an analytical yield spectra (AYS). We have calculated the mean energy per ion
pair and efficiencies for various inelastic processes, including the double and
dissociative double ionization of \car\ and negative ion formation. The energy
distribution of the secondary electrons produced per incident electron is also
presented at few incident energies. The mean energy per ion pair for CO2 is
37.5 (35.8) eV at 200 (1000) eV, compared to experimental value 32.7 eV at high
energies. Ionization is the dominant loss process at energies above 50 eV with
contribution of ~50%. Among the excitation processes, 13.6 eV and 12.4 eV
states are the dominant loss processes consuming ~28% energy above 200 eV.
Around and below ionization threshold, 13.6 eV, 12.4 eV, and 11.1 eV, followed
by 8.6 eV and 9.3 eV excitation states are important loss processes, while
below 10 eV vibrational excitation dominates.Comment: 31 pages, 13 figure
Sensitivity of an image plate system in the XUV (60 eV < E < 900 eV)
Phosphor imaging plates (IPs) have been calibrated and proven useful for
quantitative x-ray imaging in the 1 to over 1000 keV energy range. In this
paper we report on calibration measurements made at XUV energies in the 60 to
900 eV energy range using beamline 6.3.2 at the Advanced Light Source at
Lawrence Berkeley National Laboratory. We measured a sensitivity of ~25 plus or
minus 15 counts/pJ over the stated energy range which is compatible with the
sensitivity of Si photodiodes that are used for time-resolved measurements. Our
measurements at 900 eV are consistent with the measurements made by Meadowcroft
et al. at ~1 keV.Comment: 7 pages, 2 figure
Is your article EV-TRACKed?
The EV-TRACK knowledgebase is developed to cope with the need for transparency and rigour to increase reproducibility and facilitate standardization of extracellular vesicle (EV) research. The knowledgebase includes a checklist for authors and editors intended to improve the transparency of methodological aspects of EV experiments, allows queries and meta-analysis of EV experiments and keeps track of the current state of the art. Widespread implementation by the EV research community is key to its success
Thermal annealing behaviour on electrical properties of Pd/Ru Schottky contacts on n-type GaN
We have investigated the electrical properties of Pd/Ru Schottky contacts on n-GaN as a function of annealing temperature by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The Schottky barrier height of the as-deposited Pd/Ru contact is found to be 0.67 eV (I-V) and 0.79 eV (C-V), respectively. Measurements showed that the Schottky barrier height increased from 0.68 eV (I-V) and 0.80 eV (C-V) to 0.80 eV (I-V) and 0.96 eV (C-V) as the annealing temperature is varied from 200 °C to 300 °C. Upon annealing at 400 °C and 500 °C, the Schottky barrier height decreased to 0.73 eV (I-V) and 0.85 eV (C-V) and 0.72 eV (I-V) and 0.84 eV (C-V), respectively. It is noted that the barrier height further decreased to 0.59 eV (I-V) and 0.72 eV (C-V) when the contact is annealed at 600 °C. The change of Schottky barrier heights and ideality factors with annealing temperature may be due to the formation of interfacial compounds at the Ru/Pd/n-GaN interface.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/2788
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