Doped semiconductor material and method for doping same

A method for doping semiconductor material and the semiconductor produced by the method are described. An interface is established between a solid electrolyte and a semiconductor to be doped. The electrolyte is chosen to be an ionic conductor of the selected impurity and the semiconductor material and electrolyte are jointly chosen so that any compound formed from the impurity and the semiconductor will have a free energy no lower than the electrolyte. A potential is then established across the interface so as to allow the impurity ions to diffuse into the semiconductor. In one embodiment the semiconductor and electrolyte may be heated so as to increase the diffusion coefficient

Initial stages of high temperature metal oxidation

The application of XPS and UPS to the study of the initial stages of high temperature (> 350/sup 0/C) electrochemical oxidation of iron and nickel is discussed. In the high temperature experiments, iron and nickel electrodes were electrochemically oxidized in contact with a solid oxide electrolyte in the uhv system. The great advantages of this technique are that the oxygen activity at the interface may be precisely controlled and the ability to run the reactions in uhv allows the simultaneous observation of the reactions by XPS

The generalized parton distributions of the nucleon in the NJL model based on the Faddeev approach

We study the generalized parton distributions, including the helicity-flip ones, using Nambu-Jona-Lasinio model based on a relativistic Faddeev approach with `static approximation'. Sum rules relating the generalized parton distributions to nucleon electromagnetic form factors are satisfied. Moreover, quark-antiquark contributions in the region $-\xi<x<\xi$ are non-vanishing. Our results are qualitatively similar to those calculated with Radyushkin's double distribution ansatz using forward parton distribution functions calculated in the NJL model as inputs.Comment: 35 pages, 15 figure

Multi-Threshold Level Set Model for Image Segmentation

A multi-threshold level set model for image segmentations is presented in the paper. The multi-threshold level set formulation uses a speed function for stopping the locations of the active contours. The speed function with multiple thresholds is designed for detecting boundaries of multiple regions of interest (ROI) in images. These thresholds can be automatically obtained by Fuzzy C-means method. The experimental results show that the proposed method is able to capture boundaries of multiple regions of interest

Rhenium complex as emitting material in highly efficient phosphorescent organic light-emitting diodes

Interest in luminescent materials able to efficiently emit in the solid state is continuously growing, because in most applications the dyes are used as solid films. This is the case of the Organic Light Emitting Diodes (OLEDs), where electroluminescent metal complexes have been widely investigated as dopants, able to increase their performances [1]. We present here a dinuclear Re(I) complexes (1, see Scheme 1) whose emission is higher in solid state and in PMMA matrix than in solution and is used as dopant in OLEDs. This complex belong to the family of neutral Re(I) complexes with general formula [Re2(CO)6(\u3bc-1,2-diazine)(\u3bc-X)2], where X is halogen. Some of them have recently gained interest for their intense yellow/green emission, occurring from triplet metal-to-ligand charge transfer (3MLCT) states [2], showing a modulation effect of the diazine substituents on wavelengths, lifetimes and quantum yields of the emission. \u3a6 up to 0.53 has been measured for the di-chloro complexes containing diazines bearing alkyl groups in both the \u3b2 positions [3]. At variance with the chloro derivatives, the bromo analogue 1 is almost not-emitting in solution (\u3a6em 0.002 in deareated toluene). We have now found that in the solid state 1 shows intense yellow-orange emission (\u3a6em 0.50 in neat powder), blue shifted with respect to the solution (560 nm vs. 620 nm). The emission is intense also in PMMA matrix (\u3a6em 0.19 in PMMA at 10% w/w, 556 nm). This very high aggregated emission here is discussed in terms of the restriction of the intramolecular roto-vibrational motions of the \u201cRe2(CO)6(\u3bc-Br)2\u201d scaffold imposed by the rigid environment, as evidenced by the strong decrease of the knr. Moreover a parallel increase of kr is noticed, which clearly shows the influence of the halides in determining not only the energy of the excited state, but also the nature of the lowest (emitting) state. These properties allowed its successful use as a phosphorescent dopant in OLEDs and here we report the performances of OLED devices prepared both by solution- and vacuumprocessing. The values of the external quantum efficiency are 1.7% (4.3 cd/A and 1.7 lm/W) and 10% (29.1 cd/A and 22.1 lm/W) respectively and are the highest ever reported for rhenium-based devices, comparable to state-of-the-art devices employing Ir(III)- and Pt(II)- based metal complexes. The combination of synthetic strategy and encouraging results in potential OLEDs applications should make these dinuclear Re(I) complexes highly attractive to a broad spectrum of research fields. 1. \u201cHighly efficient OLEDs with Phosphorescent Materials\u201d H. Yersin Ed. Wiley-VCH, (2008). 2. D. Donghi, G. D\u2019Alfonso, M. Mauro, M. Panigati, P. Mercandelli, A. Sironi, P. Mussini, L. D\u2019Alfonso, Inorg. Chem. 28 (2008) 4243-4255. 3. M. Mauro, E. Quartapelle Procopio, Y. Sun, C. H. Chien, D. Donghi, M. Panigati, P. Mercandelli, P. Mussini, G. D\u2019Alfonso, L. De Cola, Adv. Funct. Mater. 19 (2009) 2607-2614

Surfactant-mediated growth of semiconductor materials

During epitaxial growth of semiconducting materials using either molecular beam epitaxy or organometallic vapour deposition, the addition of a surfactant can enhance two-dimensional layer-by-layer growth. This modified growth process is now called the surfactant-mediated growth (SMG) method. It has had an important impact on the development of technologically important materials in device applications, such as heterostructures used for laser applications. Recent developments that use surfactants to improve doping profiles in semiconducting systems and antisurfactants (ASMG) to grow quantum dots further ensure that SMG/ASMG will play a major role in the future development of optoelectronic materials and nanoparticles. In this paper, we review important earlier experimental work involving the SMG method as well as some recent developments. Theoretical work involving first-principles methods and kinetic Monte Carlo simulations are discussed but confined only to the surfactant effect

Aldose Reductase Genotypes and Cardiorenal Complications: An 8-year prospective analysis of 1,074 type 2 diabetic patients

OBJECTIVE—We report the independent risk association of type 2 diabetic nephropathy with the z−2 allele of the 5′-(CA)n microsatellite and C-106T promoter polymorphisms of the aldose reductase gene (ALR2) using a case-control design. In this expanded cohort, we examined their predictive roles on new onset of cardiorenal complications using a prospective design

Optical Properties and Enhanced Photothermal Conversion Efficiency of SiO2/A-Dlc Selective Absorber Films for A Solar Energy Collector Fabricated by Unbalance Sputter

AbstractSolar energy could become the most attractive alternative energy source. In this study we test an attractive new candidate material for solar energy collectors. It can be found that the higher the gas pressure is, the higher the sp2/sp3 area ratio, the greater the sputtering rate and the greater the optical absorption. The photothermal conversion efficiency of a SiO2 coating on the amorphous diamond-like carbon (a-DLC) selective absorber films deposited on the Cr/mirror like Al substrate is 93.2% as the film thickness of a SiO2 coating is 105nm. The coatings also increase the protective properties for a longer service life. This makes the SiO2 coated a-DLC film a promising new candidate material for solar selective absorber films. The SiO2/a-DLC selective absorber films also were deposited on the Al extrusion substrates

The Localization of ss-Wave and Quantum Effective Potential of a Quasi-Free Particle with Position-Dependent Mass

The properties of the s-wave for a quasi-free particle with position-dependent mass(PDM) have been discussed in details. Differed from the system with constant mass in which the localization of the s-wave for the free quantum particle around the origin only occurs in two dimensions, the quasi-free particle with PDM can experience attractive forces in $D$ dimensions except D=1 when its mass function satisfies some conditions. The effective mass of a particle varying with its position can induce effective interaction which may be attractive in some cases. The analytical expressions of the eigenfunctions and the corresponding probability densities for the s-waves of the two- and three-dimensional systems with a special PDM are given, and the existences of localization around the origin for these systems are shown.Comment: 12pages, 8 figure