Ideal CdTe/HgTe superlattices

In this paper we consider a new superlattice system consisting of alternating layers of CdTe and HgTe constructed parallel to the (001) zincblende plane. The tight‐binding method is used to calculate the electronic properties of this system, in particular, band edge and interface properties. The energy gap as a function of layer thickness is determined. It is found to decrease monotonically with increasing HgTe layer thickness for a fixed ratio of CdTe to HgTe layer thicknesses. The symmetry of the valence band maximum state is found to change at certain HgTe layer thicknesses. This is explained by relating the superlattice states to bulk CdTe and HgTe states. The existence of interface states is investigated for the superlattice with 12 layers of CdTe alternating with 12 of HgTe. Interface states are found near the boundaries of the Brillouin zone, but none are found in the band gap

Tight‐binding calculation for the AlAs–GaAs (100) interface

We report the results of a study of the electronic properties of the AlAs–GaAs interface using the tight‐binding method. The tight‐binding matrix for the superlattice system is used in the limit in which the thickness of the repeated superlattice slab becomes large. This system is studied in detail with special emphasis placed on the determination of interface states. No interface states with energies within the GaAs forbidden gap are found. The densities of states per layer are calculated and compared with bulk densities of states. They resemble the bulk densities of states except for layers adjacent to the interface

Localization of superlattice electronic states and complex bulk band structures

The relative lineup of the band structures of the two constituents of a semiconductor superlattice can cause charge carriers to be confined. This occurs when the energy of a superlattice state is located in an allowed energy region of one of the constituents (the "well" semiconductor), but in the band gap of the other (the "barrier" semiconductor). A charge carrier will tend to be confined in the layers made from the semiconductor with the allowed region at that energy. It will have an exponentially decaying amplitude to be found in the semiconductor with a band gap at that energy

Passage-time distributions from a spin-boson detector model

The passage-time distribution for a spread-out quantum particle to traverse a specific region is calculated using a detailed quantum model for the detector involved. That model, developed and investigated in earlier works, is based on the detected particle's enhancement of the coupling between a collection of spins (in a metastable state) and their environment. We treat the continuum limit of the model, under the assumption of the Markov property, and calculate the particle state immediately after the first detection. An explicit example with 15 boson modes shows excellent agreement between the discrete model and the continuum limit. Analytical expressions for the passage-time distribution as well as numerical examples are presented. The precision of the measurement scheme is estimated and its optimization discussed. For slow particles, the precision goes like $E^{-3/4}$, which improves previous $E^{-1}$ estimates, obtained with a quantum clock model.Comment: 11 pages, 6 figures; minor changes, references corrected; accepted for publication in Phys. Rev.

Relative momentum for identical particles

Possible definitions for the relative momentum of identical particles are considered

Transport mechanism through metal-cobaltite interfaces

The resistive switching (RS) properties as a function of temperature were studied for Ag/La$_{1-x}$Sr$_x$CoO$_3$ (LSCO) interfaces. The LSCO is a fully-relaxed 100 nm film grown by metal organic deposition on a LaAlO$_3$ substrate. Both low and a high resistance states were set at room temperature and the temperature dependence of their current-voltage (IV) characteristics was mea- sured taking care to avoid a significant change of the resistance state. The obtained non-trivial IV curves of each state were well reproduced by a circuit model which includes a Poole-Frenkel element and two ohmic resistances. A microscopic description of the changes produced by the RS is given, which enables to envision a picture of the interface as an area where conductive and insulating phases are mixed, producing Maxwell-Wagner contributions to the dielectric properties.Comment: 13 pages, 5 figures, to be published in APL. Corresponding author: C. Acha ([email protected]

Positional Advantage: Factors Behind the Uneven Geographic Distribution of Top Chess Players

This paper seeks to explore the reason behind the uneven geographic distribution of top chess grandmasters. FIDE rating data, country data, and survey data given to chess grandmasters are gathered to determine the validity of the hypothesis: That the two main influences in whether a country has a higher or lower number (and percentage) of top grandmasters are chess culture and federation/government support. The research tests the correlation between several variables and explores whether or not there is quantitative and qualitative support for this assumption. Individual studies in the latter end of this paper explore the countries on a case-by-case basis to explore the factors that aren’t immediately visible when observing the data alon

Semiclassical scalar propagators in curved backgrounds: formalism and ambiguities

The phenomenology of quantum systems in curved space-times is among the most fascinating fields of physics, allowing --often at the gedankenexperiment level-- constraints on tentative theories of quantum gravity. Determining the dynamics of fields in curved backgrounds remains however a complicated task because of the highly intricate partial differential equations involved, especially when the space metric exhibits no symmetry. In this article, we provide --in a pedagogical way-- a general formalism to determine this dynamics at the semiclassical order. To this purpose, a generic expression for the semiclassical propagator is computed and the equation of motion for the probability four-current is derived. Those results underline a direct analogy between the computation of the propagator in general relativistic quantum mechanics and the computation of the propagator for stationary systems in non-relativistic quantum mechanics. A possible application of this formalism to curvature-induced quantum interferences is also discussed.Comment: New materials on gravitationally-induced quantum interferences has been adde

A switch element in the autophagy E2 Atg3 mediates allosteric regulation across the lipidation cascade

Autophagy depends on the E2 enzyme, Atg3, functioning in a conserved E1-E2-E3 trienzyme cascade that catalyzes lipidation of Atg8-family ubiquitin-like proteins (UBLs). Molecular mechanisms underlying Atg8 lipidation remain poorly understood despite association of Atg3, the E1 Atg7, and the composite E3 Atg12-Atg5-Atg16 with pathologies including cancers, infections and neurodegeneration. Here, studying yeast enzymes, we report that an Atg3 element we term E123IR (E1, E2, and E3-interacting region) is an allosteric switch. NMR, biochemical, crystallographic and genetic data collectively indicate that in the absence of the enzymatic cascade, the Atg3(E123IR) makes intramolecular interactions restraining Atg3's catalytic loop, while E1 and E3 enzymes directly remove this brace to conformationally activate Atg3 and elicit Atg8 lipidation in vitro and in vivo. We propose that Atg3's E123IR protects the E2 similar to UBL thioester bond from wayward reactivity toward errant nucleophiles, while Atg8 lipidation cascade enzymes induce E2 active site remodeling through an unprecedented mechanism to drive autophagy