1,729 research outputs found
Spin-Orbit mediated spin relaxation in monolayer MoS2
We study the intra-valley spin-orbit mediated spin relaxation in monolayers
of MoS2 within a two bands effective Hamiltonian. The intrinsic spin splitting
of the valence band as well as a Rashba-like coupling due to the breaking of
the out-of-plane inversion symmetry are considered. We show that, in the hole
doped regime, the out-of-plane spin relaxation is not very efficient since the
spin splitting of the valence band tends to stabilize the spin polarization in
this direction. We obtain spin lifetimes larger than nanoseconds, in agreement
with recent valley polarization experiments.Comment: final version, 9 pages, 5 figure
Collisionless Hydrodynamics of Doped Graphene in a Magnetic Field
The electrodynamics of a two-dimensional gas of massless fermions in graphene
is studied by a collisionless hydrodynamic approach. A low-energy dispersion
relation for the collective modes (plasmons) is derived both in the absence and
in the presence of a perpendicular magnetic field. The results for graphene are
compared to those for a standard two-dimensional gas of massive electrons. We
further compare the results within the classical hydrodynamic approach to the
full quantum mechanical calculation in the random phase approximation. The
low-energy dispersion relation is shown to be a good approximation at small
wave vectors. The limitations of this approach at higher order is also
discussed.Comment: 7 pages, 1 figur
Spin-density-wave instability in graphene doped near the van Hove singularity
We study the instability of the metallic state towards the formation of a new
ground state in graphene doped near the van Hove singularity. The system is
described by the Hubbard model and a field theoretical approach is used to
calculate the charge and spin susceptibility. We find that for repulsive
interactions, within the random phase approximation, there is a competition
between ferromagnetism and spin-density wave (SDW). It turns out that a SDW
with a triangular geometry is more favorable when the Hubbard parameter is
above the critical value U_c(T), which depends on the temperature T, even if
there are small variations in the doping. Our results can be verified by ARPES
or neutron scattering experiments in highly doped graphene.Comment: 5 pages, 5 figures, 1 tabl
Effect of Point Defects on the Optical and Transport Properties of MoS2 and WS2
Imperfections in the crystal structure, such as point defects, can strongly
modify the optical and transport properties of materials. Here, we study the
effect of point defects on the optical and DC conductivities of single layers
of semiconducting transition metal dichalcogenides with the form S,
where =Mo or W. The electronic structure is considered within a six bands
tight-binding model, which accounts for the relevant combination of
orbitals of the metal and orbitals of the chalcogen . We use the
Kubo formula for the calculation of the conductivity in samples with different
distributions of disorder. We find that and/or S defects create mid-gap
states that localize charge carriers around the defects and which modify the
optical and transport properties of the material, in agreement with recent
experiments. Furthermore, our results indicate a much higher mobility for
-doped WS in comparison to MoS
Spin-wave amplification and lasing driven by inhomogeneous spin transfer torques
We show that an inhomogeneity in the spin-transfer torques in a metallic
ferromagnet under suitable conditions strongly amplifies incoming spin waves.
Moreover, at nonzero temperatures the incoming thermally occupied spin waves
will be amplified such that the region with inhomogeneous spin transfer torques
emits spin waves spontaneously, thus constituting a spin-wave laser. We
determine the spin-wave scattering amplitudes for a simplified model and
set-up, and show under which conditions the amplification and lasing occurs.
Our results are interpreted in terms of a so-called black-hole laser, and could
facilitate the field of magnonics, that aims to utilize spin waves in logic and
data-processing devices.Comment: 5 pages, 4 figure
Self-Consistent Screening Approximation for Flexible Membranes: Application to Graphene
Crystalline membranes at finite temperatures have an anomalous behavior of
the bending rigidity that makes them more rigid in the long wavelength limit.
This issue is particularly relevant for applications of graphene in nano- and
micro-electromechanical systems. We calculate numerically the height-height
correlation function of crystalline two-dimensional membranes,
determining the renormalized bending rigidity, in the range of wavevectors
from \AA till 10 \AA in the self-consistent screening
approximation (SCSA). For parameters appropriate to graphene, the calculated
correlation function agrees reasonably with the results of atomistic Monte
Carlo simulations for this material within the range of from
\AA till 1 \AA. In the limit our data for the
exponent of the renormalized bending rigidity is compatible with the previously known analytical results for the
SCSA . However, this limit appears to be reached only for
\AA whereas at intermediate the behavior of
cannot be described by a single exponent.Comment: 5 pages, 4 figure
Strain-induced bound states in transition-metal dichalcogenide bubbles
This is an author-created, un-copyedited version of an article published in 2D Materials. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The Version of Record is available online at https://doi.org/10.1088/2053-1583/ab0113We theoretically study the formation of single-particle bound states confined by strain at the center of bubbles in monolayers of transition-metal dichalcogenides (TMDs). Bubbles ubiquitously form in two-dimensional crystals on top of a substrate by the competition between van der Waals forces and the hydrostatic pressure exerted by trapped fluid. This leads to strong strain at the center of the bubble that reduces the bangap locally, creating potential wells for the electrons that confine states inside. We simulate the spectrum versus the bubble radius for the four semiconducting group VI TMDs, MoS2, WSe2, WS2 and MoSe2, and find an overall Fock-Darwin spectrum of bubble bound states, characterised by small deviations compatible with Berry curvature effects. We analyse the density of states, the state degeneracies, orbital structure and optical transition rules. Our results show that elastic bubbles in these materials are remarkably efficient at confining photocarriersWe acknowledge funding from the Graphene Flagship, contract CNECTICT-604391, from the Comunidad de Madrid through Grant MAD2D-CM, S2013/MIT-3007, from the Spanish Ministry of Economy and Competitiveness through Grants No. RYC-2011-09345, RYC-2016-20663, FIS2015-65706-P, FIS2016-80434-P (AEI/FEDER, EU) and the María de Maeztu Programme for Units of Excellence in R&D (MDM-2014-0377
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