Weak Localization Thickness Measurements of Si:P Delta-Layers

We report on our results for the characterization of Si:P delta-layers grown by low temperature molecular beam epitaxy. Our data shows that the effective thickness of a delta-layer can be obtained through a weak localization analysis of electrical transport measurements performed in perpendicular and parallel magnetic fields. An estimate of the diffusivity of phosphorous in silicon is obtained by applying this method to several samples annealed at 850 Celsius for intervals of zero to 15 minutes. With further refinements, this may prove to be the most precise method of measuring delta-layer widths developed to date, including that of Secondary Ion Mass Spectrometry analysis

Relation among concentrations of incorporated Mn atoms, ionized Mn acceptors, and holes in p-(Ga,Mn)As epilayers

The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers has been evaluated by electrochemical capacitance-voltage measurements, and has been compared systematically with concentrations of incorporated Mn atoms and holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative assessment of anomalous Hall effect at room temperature is also carried out for the first time.Comment: 8 pages, 4 figures, tabl

Generalized four-point characterization method for resistive and capacitive contacts

In this paper, a four-point characterization method is developed for resistive samples connected to either resistive or capacitive contacts. Provided the circuit equivalent of the complete measurement system is known including coaxial cable and connector capacitances as well as source output and amplifier input impedances, a frequency range and capacitive scaling factor can be determined, whereby four-point characterization can be performed. The technique is demonstrated with a discrete element test sample over a wide frequency range using lock-in measurement techniques from 1 Hz - 100 kHz. The data fit well with a circuit simulation of the entire measurement system. A high impedance preamplifier input stage gives best results, since lock-in input impedances may differ from manufacturer specifications. The analysis presented here establishes the utility of capacitive contacts for four-point characterizations at low frequency.Comment: 21 pages, 10 figure

Batch Adsorber based PSA Model for Rapid and Efficient Screening of Adsorbents in Post-Combustion CO2 Capture

The adsorption-based CO capture has shown promising potential overcoming the limitations posed by commercialised solvent amine-based systems. The choice of an adsorbent is critical to the design of pressure swing adsorption (PSA) processes. Since adsorption processes are cyclic, their design and optimization are computationally challenging. Hence, simple models that capture the essential process characteristics are required for rapid screening of adsorbents. The objective of this work is to come up with a simplified process design model for PSA process which could reliably screen the adsorbents at a faster rate. The model considers only a batch adsorber thereby significantly reducing the complexity, allowing for rapid computation. The model is used to estimate CO purity, recovery and energy consumption. The model results are compared with detailed process optimizations to develop a classification metric to identify adsorbents that satisfy U. S. Department of Energy’s requirement for CO capture processes. The model is then used to screen favourable adsorbents from a set of 100+ real and hypothetical adsorbents. The results indicate that the batch adsorber model can be used for screening a large database of adsorbents in a fast and efficient manner.Fil: Subramanian Balashankar, V.. University of Alberta; CanadáFil: De Pauw, R.. University of Alberta; CanadáFil: Rajagopalan, A. K.. University of Alberta; CanadáFil: Avila, Adolfo María. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Tucumán. Instituto de Química del Noroeste. Universidad Nacional de Tucumán. Facultad de Bioquímica, Química y Farmacia. Instituto de Química del Noroeste; ArgentinaFil: Rajendran, A.. University of Alberta; CanadáXXIX Interamerican Congress of Chemical EngineeringTorontoCanadáCanadian Society for Chemical Engineerin

Prediction of impending type 1 diabetes through automated dual-label measurement of proinsulin:C-peptide ratio

Background : The hyperglycemic clamp test, the gold standard of beta cell function, predicts impending type 1 diabetes in islet autoantibody-positive individuals, but the latter may benefit from less invasive function tests such as the proinsulin: C-peptide ratio (PI:C). The present study aims to optimize precision of PI:C measurements by automating a dual-label trefoil-type time-resolved fluorescence immunoassay (TT-TRFIA), and to compare its diagnostic performance for predicting type 1 diabetes with that of clamp-derived C-peptide release. Methods : Between-day imprecision (n = 20) and split-sample analysis (n = 95) were used to compare TT-TRFIA (Auto Delfia, Perkin-Elmer) with separate methods for proinsulin (in-house TRFIA) and C-peptide (Elecsys, Roche). High-risk multiple autoantibody-positive firstdegree relatives (n = 49; age 5-39) were tested for fasting PI:C, HOMA2-IR and hyperglycemic clamp and followed for 20-57 months (interquartile range). Results : TT-TRFIA values for proinsulin, C-peptide and PI:C correlated significantly (r(2) = 0.96-0.99; P<0.001) with results obtained with separate methods. TT-TRFIA achieved better between-day % CV for PI:C at three different levels (4.5-7.1 vs 6.7-9.5 for separate methods). In high-risk relatives fasting PI:C was significantly and inversely correlated ( r(s) = -0.596; P<0.001) with first-phase C-peptide release during clamp ( also with second phase release, only available for age 12-39 years; n = 31), but only after normalization for HOMA2-IR. In ROC- and Cox regression analysis, HOMA2-IR-corrected PI:C predicted 2-year progression to diabetes equally well as clamp-derived C-peptide release. Conclusions : The reproducibility of PI:C benefits from the automated simultaneous determination of both hormones. HOMA2-IR-corrected PI:C may serve as a minimally invasive alternative to the more tedious hyperglycemic clamp test

Resistivity of dilute 2D electrons in an undoped GaAs heterostructure

We report resistivity measurements from 0.03 K to 10 K in a dilute high mobility 2D electron system. Using an undoped GaAs/AlGaAs heterojunction in a gated field-effect transistor geometry, a wide range of densities, $0.16 \times 10^{10} {cm}^{-2}$ to $7.5 \times 10^{10} {cm}^{-2}$, are explored. For high densities, the results are quantitatively shown to be due to scattering by acoustic phonons and impurities. In an intermediate range of densities, a peak in the resistivity is observed for temperatures below 1 K. This non-monotonic resistivity can be understood by considering the known scattering mechanisms of phonons, bulk and interface ionized impurities. Still lower densities appear insulating to the lowest temperature measured.Comment: 4 pages, 4 figure