The amount of ionized Mn acceptors in various p-type Mn-doped GaAs epilayers
has been evaluated by electrochemical capacitance-voltage measurements, and has
been compared systematically with concentrations of incorporated Mn atoms and
holes for wide range of Mn concentration (10^17 ~ 10^21 cm^-3). Quantitative
assessment of anomalous Hall effect at room temperature is also carried out for
the first time.Comment: 8 pages, 4 figures, tabl