218 research outputs found
Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources
Plasma-assisted molecular beam epitaxy (PA-MBE) is now widely used for the growth of group III-nitrides. Many years ago it became clear that during PA-MBE there is unintentional doping of GaN with boron (B) due to decomposition of the pyrolytic boron nitride (PBN) cavity of the RF plasma source. In this paper we discuss the unintentional B incorporation for PA-MBE growth of GaN and AlxGa1βxN using a highly efficient RF plasma source. We have studied a wide range of MBE growth conditions for GaN and AlxGa1βxN with growth rates from 0.2 to 3 Β΅m/h, RF powers from 200 to 500 W, different nitrogen flow rates from 1 to 25 sccm and growth times up to several days. The chemical concentrations of B and matrix elements of Al, Ga, N were studied as a functions of depth using secondary ion mass spectrometry (SIMS). We demonstrate that boron incorporation with this highly efficient RF plasma source is approximately 1Γ1018 to 3Γ1018 cmβ3 for the AlxGa1βxN growth rates of 2 β 3 Β΅m/h
Growth of free-standing bulk wurtzite AlxGa1βxN layers by molecular beam epitaxy using a highly efficient RF plasma source
The recent development of group III nitrides allows researchers world-wide to consider AlGaN based light emitting diodes as a possible new alternative deep ultraβviolet light source for surface decontamination and water purification. In this paper we will describe our recent results on plasma-assisted molecular beam epitaxy (PA-MBE) growth of free-standing wurtzite AlxGa1βxN bulk crystals using the latest model of Riber's highly efficient nitrogen RF plasma source. We have achieved AlGaN growth rates up to 3 Β΅m/h. Wurtzite AlxGa1βxN layers with thicknesses up to 100 ΞΌm were successfully grown by PA-MBE on 2-inch and 3-inch GaAs (111)B substrates. After growth the GaAs was subsequently removed using a chemical etch to achieve free-standing AlxGa1βxN wafers. Free-standing bulk AlxGa1βxN wafers with thicknesses in the range 30β100 ΞΌm may be used as substrates for further growth of AlxGa1βxN-based structures and devices. High Resolution Scanning Transmission Electron Microscopy (HR-STEM) and Convergent Beam Electron Diffraction (CBED) were employed for detailed structural analysis of AlGaN/GaAs (111)B interface and allowed us to determine the N-polarity of AlGaN layers grown on GaAs (111)B substrates. The novel, high efficiency RF plasma source allowed us to achieve free-standing AlxGa1βxN layers in a single day's growth, making this a commercially viable process
X-ray Diffraction Analysis of the Chromium-containing Electroerosion Powders of Micro - and Nanoparticles
Presents the results of a study of x-ray analysis of the powder obtained by electro erosion dispersing of waste nichrome H15N60 brand in kerosene lighting. The major phases in Nickel-chromium powder obtained by electroerosion dispersion method in kerosene lighting are Ni and Si2O
Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN
Currently there is a high level of interest in the development of ultraviolet (UV) light sources for solid state lighting, optical sensors, surface decontamination and water purification. III-V semiconductor UV LEDs are now successfully manufactured using the AlGaN material system; however, their efficiency is still low. The majority of UV LEDs require AlxGa1-xN layers with compositions in the mid-range between AlN and GaN. Because there is a significant difference in the lattice parameters of GaN and AlN, AlxGa1-xN substrates would be preferable to those of either GaN or AlN for many ultraviolet device applications. However, the growth of AlxGa1-xN bulk crystals by any standard bulk growth techniques has not been developed so far.
There are very strong electric polarization fields inside the wurtzite (hexagonal) group III-nitride structures. The charge separation within quantum wells leads to a significant reduction in the efficiency of optoelectronic device structures. Therefore, the growth of non-polar and semi-polar group III-nitride structures has been the subject of considerable interest recently. A direct way to eliminate polarization effects is to use non-polar (001) zinc-blende (cubic) III-nitride layers. However, attempts to grow zinc-blende GaN bulk crystals by anystandard bulk growth techniques were not successful.
Molecular beam epitaxy (MBE) is normally regarded as an epitaxial technique for the growth of very thin layers with monolayer control of their thickness. In this study we have used plasma-assisted molecular beam epitaxy (PA MBE) and have produced for the first time free-standing layers of zinc-blende GaN up to 100 ΞΌm in thickness and up to 3-inch in diameter. We have shown that our newly developed PA-MBE process for the growth of zinc-blende GaN layers can also be used to achieve free-standing wurtzite AlxGa1-xN wafers. Zinc-blende and wurtzite AlxGa1-xN polytypes can be grown on different orientations of GaAs substrates - (001) and (111)B respectively. We have subsequently removed the GaAs using a chemical etch in order to produce free-standing GaN and AlxGa1-xN wafers. At a thickness of βΌ30 ΞΌm, free-standing GaN and AlxGa1-xN wafers can easily be handled without cracking. Therefore, free-standing GaN and AlxGa1-xN wafers with thicknesses in the 30β100 ΞΌm range may be used as substrates for further growth of GaN and AlxGa1 xN-based structures and devices.
We have compared different RF nitrogen plasma sources for the growth of thick nitride AlxGa1-xN films including a standard HD25 source from Oxford Applied Research and a novel high efficiency source from Riber. We have investigated a wide range of the growth rates from 0.2 to 3 ΞΌm/h. The use of highly efficient nitrogen RF plasma sources makes PA-MBE a potentially viable commercial process, since free-standing films can be achieved in a single day.
Our results have demonstrated that MBE may be competitive with the other group III-nitrides bulk growth techniques in several important areas including production of free-standing zinc-blende (cubic) (Al)GaN and of free-standing wurtzite (hexagonal) AlGaN
Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys
GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here, they present first results on PA-MBE growth and properties of N-rich GaNSb and InNAs alloys and compare these with GaNAs and GaNBi alloys. The enhanced incorporation of As and Sb was achieved by growing the layers at extremely low growth temperatures. Although layers become amorphous for high As, Sb, and Bi content, optical absorption measurements show a progressive shift of the optical absorption edge to lower energy. The large band gap range and controllable conduction and valence band positions of these HMAs make them promising materials for efficient solar energy conversion devices
Π‘Π«ΠΠΠ ΠΠ’ΠΠ§ΠΠΠ Π‘ΠΠΠΠ ΠΠΠΠΠ Π ΠΠ‘Π’ΠΠΠ ΠΠΠ«Π₯ ΠΠΠΠΠΠ£Π CD25 Π CD95 Π£ ΠΠΠΠΠΠΠ«Π₯ ΠΠΠΠ¬ΠΠ«Π₯
Background: Burn injury is accompanied by modulation of the many components of immunity, including the system regulation, which includes soluble forms of leukocyte differentiation molecules. Earlier in burn patients, we detected changes in serum levels of soluble differentiation molecules CD25 (sCD25) and CD95 (sCD25). Despite the existence of data on change of serum level of the soluble molecules CD25 and CD95 in the blood of patients with a burn trauma, there are no data on particular cell producers.Aims: To conduct the analysis of serum level of the molecules sCD25 and sCD95 in the blood of patients with acute burn trauma in comparison with peripheral blood cells composition to obtain data on the types of cells that produce the molecules sCD25 and sCD95.Materials and methods: Blood samples from 24 heavily burnt patients aged 16 to 77 years were studied. Determination of sCD25 and sCD95 molecules serum levels was performed by ELISA. Number of CD45+CD25+ lymphocytes, CD45+CD95+ cells, CD14+CD95+ monocytes, CD16b+CD95+ neutrophils, and RFMI (relative mean fluorescence intensity) was evaluated by flow cytometry.Results: In the first five days of the date of burn sCD25 and sCD95 serum levels tended to increase. sCD25 molecules contents in the blood of surviving and dead patients did not depend on the relative content of CD45+CD25+ lymphocytes, RFMI index, but correlated with the absolute level of lymphocytes and leukocytes. Serum levels of sCD95 molecules showed the dependence on the absolute neutrophil count and leukocytes in the survivors and on the absolute content of lymphocytes, neutrophils, and leukocytes in patients who died.Conclusions: The findings suggest that the lymphocytes in the early period of burn disease are the main cells-producers of sCD25 and affect the increase of its content in the blood serum not due to changes in the density of CD25 molecules expression on their membrane followed by increased shedding but by increasing the number of CD25 positive cells. The main cells-producers of sCD95 molecules for survivors in the early period of burn disease are likely to be the neutrophils and lymphocytes; in the dead patients, the main producers are neutrophils.ΠΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½ΠΈΠ΅. ΠΠΆΠΎΠ³ΠΎΠ²Π°Ρ ΡΡΠ°Π²ΠΌΠ° ΡΠΎΠΏΡΠΎΠ²ΠΎΠΆΠ΄Π°Π΅ΡΡΡ ΠΌΠΎΠ΄ΡΠ»ΡΡΠΈΠ΅ΠΉ ΠΌΠ½ΠΎΠ³ΠΈΡ
Π·Π²Π΅Π½ΡΠ΅Π² ΠΈΠΌΠΌΡΠ½ΠΈΡΠ΅ΡΠ°, Π² ΡΠΎΠΌ ΡΠΈΡΠ»Π΅ ΡΠΈΡΡΠ΅ΠΌΠΎΠΉ ΡΠ΅Π³ΡΠ»ΡΡΠΈΠΈ, Π² ΡΠΎΡΡΠ°Π² ΠΊΠΎΡΠΎΡΠΎΠΉ Π²Ρ
ΠΎΠ΄ΡΡ ΡΠ°ΡΡΠ²ΠΎΡΠΈΠΌΡΠ΅ ΡΠΎΡΠΌΡ Π»Π΅ΠΉΠΊΠΎΡΠΈΡΠ°ΡΠ½ΡΡ
Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΡΠΎΠ²ΠΎΡΠ½ΡΡ
ΠΌΠΎΠ»Π΅ΠΊΡΠ». Π Π°Π½Π΅Π΅ Ρ ΠΎΠΆΠΎΠ³ΠΎΠ²ΡΡ
Π±ΠΎΠ»ΡΠ½ΡΡ
Π±ΡΠ»ΠΈ ΠΎΠ±Π½Π°ΡΡΠΆΠ΅Π½Ρ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΡ Π² ΡΡΠ²ΠΎΡΠΎΡΠΎΡΠ½ΠΎΠΌ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΠΈ ΡΠ°ΡΡΠ²ΠΎΡΠΈΠΌΡΡ
Π΄ΠΈΡΡΠ΅ΡΠ΅Π½ΡΠΈΡΠΎΠ²ΠΎΡΠ½ΡΡ
ΠΌΠΎΠ»Π΅ΠΊΡΠ» CD25 (sCD25) ΠΈ CD95 (sCD25). ΠΠ΅ΡΠΌΠΎΡΡΡ Π½Π° Π½Π°Π»ΠΈΡΠΈΠ΅ Π΄Π°Π½Π½ΡΡ
ΠΎΠ± ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΠΈ ΡΡΠ²ΠΎΡΠΎΡΠΎΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ ΡΠ°ΡΡΠ²ΠΎΡΠΈΠΌΡΡ
ΠΌΠΎΠ»Π΅ΠΊΡΠ» CD25 ΠΈ CD95 Π² ΠΊΡΠΎΠ²ΠΈ ΠΏΠ°ΡΠΈΠ΅Π½ΡΠΎΠ² Ρ ΠΎΠΆΠΎΠ³ΠΎΠ²ΠΎΠΉ ΡΡΠ°Π²ΠΌΠΎΠΉ, ΠΎΡΡΡΡΡΡΠ²ΡΡΡ Π΄Π°Π½Π½ΡΠ΅ ΠΎ ΡΠΎΠΌ, ΠΊΠ°ΠΊΠΈΠΌΠΈ ΠΊΠ»Π΅ΡΠΊΠ°ΠΌΠΈ ΠΎΠ½ΠΈ ΠΏΡΠΎΠ΄ΡΡΠΈΡΡΡΡΡΡ.Π¦Π΅Π»Ρ ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡ β ΠΏΡΠΎΠ²Π΅ΡΡΠΈ Π°Π½Π°Π»ΠΈΠ· ΡΡΠ²ΠΎΡΠΎΡΠΎΡΠ½ΠΎΠ³ΠΎ ΡΡΠΎΠ²Π½Ρ ΠΌΠΎΠ»Π΅ΠΊΡΠ» sCD25 ΠΈ sCD95 Π² ΠΊΡΠΎΠ²ΠΈ ΠΏΠ°ΡΠΈΠ΅Π½ΡΠΎΠ² Π² ΠΎΡΡΡΠΎΠΌ ΠΏΠ΅ΡΠΈΠΎΠ΄Π΅ ΠΎΠΆΠΎΠ³ΠΎΠ²ΠΎΠΉ ΡΡΠ°Π²ΠΌΡ Π² ΡΠΎΠΏΠΎΡΡΠ°Π²Π»Π΅Π½ΠΈΠΈ Ρ ΠΏΠΎΠΏΡΠ»ΡΡΠΈΠΎΠ½Π½ΡΠΌ ΡΠΎΡΡΠ°Π²ΠΎΠΌ ΠΊΠ»Π΅ΡΠΎΠΊ ΠΏΠ΅ΡΠΈΡΠ΅ΡΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΊΡΠΎΠ²ΠΈ Ρ ΡΠ΅Π»ΡΡ ΠΏΠΎΠ»ΡΡΠ΅Π½ΠΈΡ Π΄Π°Π½Π½ΡΡ
ΠΎ ΡΠΈΠΏΠ°Ρ
ΠΊΠ»Π΅ΡΠΎΠΊ, ΠΏΡΠΎΠ΄ΡΡΠΈΡΡΡΡΠΈΡ
ΠΌΠΎΠ»Π΅ΠΊΡΠ»Ρ sCD25 ΠΈ sCD95.ΠΠ΅ΡΠΎΠ΄Ρ. ΠΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½Ρ ΠΎΠ±ΡΠ°Π·ΡΡ ΠΊΡΠΎΠ²ΠΈ 24 ΡΡΠΆΠ΅Π»ΠΎ ΠΎΠ±ΠΎΠΆΠΆΠ΅Π½Π½ΡΡ
ΠΏΠ°ΡΠΈΠ΅Π½ΡΠΎΠ² Π² Π²ΠΎΠ·ΡΠ°ΡΡΠ΅ ΠΎΡ 16 Π΄ΠΎ 77 Π»Π΅Ρ. ΠΠΏΡΠ΅Π΄Π΅Π»Π΅Π½ΠΈΠ΅ ΡΡΠ²ΠΎΡΠΎΡΠΎΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ ΠΌΠΎΠ»Π΅ΠΊΡΠ» sCD25 ΠΈ sCD95 ΠΏΡΠΎΠ²ΠΎΠ΄ΠΈΠ»ΠΈ ΠΈΠΌΠΌΡΠ½ΠΎΡΠ΅ΡΠΌΠ΅Π½ΡΠ½ΡΠΌ ΠΌΠ΅ΡΠΎΠ΄ΠΎΠΌ. ΠΠΎΠ»ΠΈΡΠ΅ΡΡΠ²ΠΎ CD45+CD25+ Π»ΠΈΠΌΡΠΎΡΠΈΡΠΎΠ², CD45+CD95+ ΠΊΠ»Π΅ΡΠΎΠΊ, CD14+CD95+ ΠΌΠΎΠ½ΠΎΡΠΈΡΠΎΠ², CD16b+CD95+ Π½Π΅ΠΉΡΡΠΎΡΠΈΠ»ΠΎΠ² ΠΈ RFMI (relative mean fluorescence intensity) ΠΎΡΠ΅Π½ΠΈΠ²Π°Π»ΠΈ Ρ ΠΏΠΎΠΌΠΎΡΡΡ ΠΏΡΠΎΡΠΎΡΠ½ΠΎΠΉ ΡΠΈΡΠΎΡΠ»ΡΠΎΡΠΎΠΌΠ΅ΡΡΠΈΠΈ.Π Π΅Π·ΡΠ»ΡΡΠ°ΡΡ. Π ΠΏΠ΅ΡΠ²ΡΠ΅ ΠΏΡΡΡ ΡΡΡΠΎΠΊ ΠΎΡ ΠΌΠΎΠΌΠ΅Π½ΡΠ° ΠΎΠΆΠΎΠ³Π° ΡΡΠ²ΠΎΡΠΎΡΠΎΡΠ½ΠΎΠ΅ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΠ΅ sCD25 ΠΈ sCD95 ΠΈΠΌΠ΅Π»ΠΎ ΡΠ΅Π½Π΄Π΅Π½ΡΠΈΡ ΠΊ ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΡ. Π‘ΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΠ΅ ΠΌΠΎΠ»Π΅ΠΊΡΠ» sCD25 ΠΊΠ°ΠΊ Ρ Π²ΡΠΆΠΈΠ²ΡΠΈΡ
, ΡΠ°ΠΊ ΠΈ ΠΏΠΎΠ³ΠΈΠ±ΡΠΈΡ
Π±ΠΎΠ»ΡΠ½ΡΡ
Π½Π΅ Π·Π°Π²ΠΈΡΠ΅Π»ΠΎ ΠΎΡ ΠΎΡΠ½ΠΎΡΠΈΡΠ΅Π»ΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ CD45+CD25+ Π»ΠΈΠΌΡΠΎΡΠΈΡΠΎΠ², ΠΈΠ½Π΄Π΅ΠΊΡΠ° RFMI, Π½ΠΎ ΠΊΠΎΡΡΠ΅Π»ΠΈΡΠΎΠ²Π°Π»ΠΎ Ρ Π°Π±ΡΠΎΠ»ΡΡΠ½ΡΠΌ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΠ΅ΠΌ Π»ΠΈΠΌΡΠΎΡΠΈΡΠΎΠ² ΠΈ Π»Π΅ΠΉΠΊΠΎΡΠΈΡΠΎΠ². Π‘ΡΠ²ΠΎΡΠΎΡΠΎΡΠ½ΡΠΉ ΡΡΠΎΠ²Π΅Π½Ρ ΠΌΠΎΠ»Π΅ΠΊΡΠ» sCD95 ΠΎΠ±Π½Π°ΡΡΠΆΠΈΠ²Π°Π» Π·Π°Π²ΠΈΡΠΈΠΌΠΎΡΡΡ ΠΎΡ Π°Π±ΡΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ Π½Π΅ΠΉΡΡΠΎΡΠΈΠ»ΠΎΠ² ΠΈ Π»Π΅ΠΉΠΊΠΎΡΠΈΡΠΎΠ² Ρ Π²ΡΠΆΠΈΠ²ΡΠΈΡ
Π±ΠΎΠ»ΡΠ½ΡΡ
ΠΈ Π°Π±ΡΠΎΠ»ΡΡΠ½ΠΎΠ³ΠΎ ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ Π»ΠΈΠΌΡΠΎΡΠΈΡΠΎΠ², Π½Π΅ΠΉΡΡΠΎΡΠΈΠ»ΠΎΠ² ΠΈ Π»Π΅ΠΉΠΊΠΎΡΠΈΡΠΎΠ² β Ρ ΠΏΠΎΠ³ΠΈΠ±ΡΠΈΡ
.ΠΠ°ΠΊΠ»ΡΡΠ΅Π½ΠΈΠ΅. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π΄Π°Π½Π½ΡΠ΅ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΡΡ Π·Π°ΠΊΠ»ΡΡΠΈΡΡ, ΡΡΠΎ Π»ΠΈΠΌΡΠΎΡΠΈΡΡ Π² ΡΠ°Π½Π½Π΅ΠΌ ΠΏΠ΅ΡΠΈΠΎΠ΄Π΅ ΠΎΠΆΠΎΠ³ΠΎΠ²ΠΎΠΉ Π±ΠΎΠ»Π΅Π·Π½ΠΈ ΡΠ²Π»ΡΡΡΡΡ ΠΎΡΠ½ΠΎΠ²Π½ΡΠΌΠΈ ΠΊΠ»Π΅ΡΠΊΠ°ΠΌΠΈ-ΠΏΡΠΎΠ΄ΡΡΠ΅Π½ΡΠ°ΠΌΠΈ sCD25 ΠΈ Π²Π»ΠΈΡΡΡ Π½Π° ΠΏΠΎΠ²ΡΡΠ΅Π½ΠΈΠ΅ ΠΈΡ
ΡΠΎΠ΄Π΅ΡΠΆΠ°Π½ΠΈΡ Π² ΡΡΠ²ΠΎΡΠΎΡΠΊΠ΅ ΠΊΡΠΎΠ²ΠΈ Π½Π΅ Π·Π° ΡΡΠ΅Ρ ΠΈΠ·ΠΌΠ΅Π½Π΅Π½ΠΈΡ ΠΏΠ»ΠΎΡΠ½ΠΎΡΡΠΈ ΡΠΊΡΠΏΡΠ΅ΡΡΠΈΠΈ Π½Π° ΠΈΡ
ΠΌΠ΅ΠΌΠ±ΡΠ°Π½Π΅ ΠΌΠΎΠ»Π΅ΠΊΡΠ» CD25 Ρ ΠΏΠΎΡΠ»Π΅Π΄ΡΡΡΠΈΠΌ ΡΡΠΈΠ»Π΅Π½ΠΈΠ΅ΠΌ ΡΠ΅Π΄Π΄ΠΈΠ½Π³Π°, Π° ΠΏΡΡΠ΅ΠΌ ΡΠ²Π΅Π»ΠΈΡΠ΅Π½ΠΈΡ ΠΊΠΎΠ»ΠΈΡΠ΅ΡΡΠ²Π° Π‘D25-ΠΏΠΎΠ»ΠΎΠΆΠΈΡΠ΅Π»ΡΠ½ΡΡ
ΠΊΠ»Π΅ΡΠΎΠΊ. ΠΡΠ½ΠΎΠ²Π½ΡΠΌΠΈ ΠΊΠ»Π΅ΡΠΊΠ°ΠΌΠΈ-ΠΏΡΠΎΠ΄ΡΡΠ΅Π½ΡΠ°ΠΌΠΈ ΠΌΠΎΠ»Π΅ΠΊΡΠ» sCD95 Ρ Π²ΡΠΆΠΈΠ²ΡΠΈΡ
Π±ΠΎΠ»ΡΠ½ΡΡ
Π² ΡΠ°Π½Π½Π΅ΠΌ ΠΏΠ΅ΡΠΈΠΎΠ΄Π΅ ΠΎΠΆΠΎΠ³ΠΎΠ²ΠΎΠΉ Π±ΠΎΠ»Π΅Π·Π½ΠΈ, Π²Π΅ΡΠΎΡΡΠ½ΠΎ, ΡΠ²Π»ΡΡΡΡΡ Π½Π΅ΠΉΡΡΠΎΡΠΈΠ»Ρ ΠΈ Π»ΠΈΠΌΡΠΎΡΠΈΡΡ, Ρ ΠΏΠΎΠ³ΠΈΠ±ΡΠΈΡ
β Π½Π΅ΠΉΡΡΠΎΡΠΈΠ»Ρ.
ΠΠ»ΠΈΡΠ½ΠΈΠ΅ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΏΠΎΡΠ²Ρ ΠΈ ΠΌΠΈΠ½Π΅ΡΠ°Π»ΡΠ½ΠΎΠ³ΠΎ ΠΏΠΈΡΠ°Π½ΠΈΡ Π½Π° Π΄ΠΈΠ½Π°ΠΌΠΈΠΊΡ Π±ΠΈΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΠΎΠΉ Π°ΠΊΡΠΈΠ²Π½ΠΎΡΡΠΈ ΠΈ NPK ΠΏΡΠΈ Π²ΠΎΠ·Π΄Π΅Π»ΡΠ²Π°Π½ΠΈΠΈ ΡΡΠΎΠ²ΠΎΠ³ΠΎ ΡΡΠΌΠ΅Π½Ρ
The use of scientifically based doses of fertilizers in the cultivation of crops does not lead to the removal of nutrients from the natural reserves of the organic and mineral soil by microflora. At the same time, the methods and terms for the introduction of mineral fertilizers must be linked with the technology of soil preparation and moisture supply. Nitrogen fertilizers, because of their rapid volati-lization, are recommended to be applied for pre-sowing cultivation with sealing in the surface layer, and phosphorous fertilizers, as inactive β along with the main soil treatment. In this connection, in studies of the significant influence of the methods of basic soil cultivation with and without application of nitrogen, its dynamics along layers are not revealed. Deep soil-free tillage allows significantly more accumulation and longer storage of moisture in the soil layers; In comparison with the classical plowing and dumping plowing and planing in a meter layer of soil, the additional moisture reserves before sowing the crop are respectively 300 and 230 m3 / ha, in the tubing phase β barley β 256 and 189 m3/ha, in the phase of milk ripeness β 270 And 128 m3/ha. Deficiency of moisture reduces the biological activity of the soil, in this regard, moisture-saving methods of basic soil cultivation are especially important in conditions of rain-fed farming, not only on the yield of agricultural crops, but also on the processes of humus formation. The total accumulation of amino acids in the half-meter layer in the variant with deep soil-free tillage before sowing barley was 424 ΞΌg amine / G of cloth, in the phase of tubing β ear β 400 ΞΌg amine / G canvas, in the phase of milk ripeness β 210 ΞΌg amine / G of canvas. The values obtained are higher in comparison with the control data and the variant with planar tillage at 7 and 18%, 48 and 32%, 10 and 36% respectively. Positive dynamics in terms of productive moisture and accumulation of amino acids in the variant with deep soil-free soil treatment, application of calculated phosphorus doses for main processing and nitrogen for pre-sowing cultivation, had an effect on a significant increase in grain relative to control at 0.4 t/ha, Processing β at 0.35 t/ha.ΠΡΠΈΠΌΠ΅Π½Π΅Π½ΠΈΠ΅ Π½Π°ΡΡΠ½ΠΎ ΠΎΠ±ΠΎΡΠ½ΠΎΠ²Π°Π½Π½ΡΡ
Π΄ΠΎΠ· ΡΠ΄ΠΎΠ±ΡΠ΅Π½ΠΈΠΉ ΠΏΡΠΈ Π²ΠΎΠ·Π΄Π΅Π»ΡΠ²Π°Π½ΠΈΠΈ ΡΠ΅Π»ΡΡΠΊΠΎΡ
ΠΎΠ·ΡΠΉΡΡΠ²Π΅Π½Π½ΡΡ
ΠΊΡΠ»ΡΡΡΡ Π½Π΅ ΠΏΡΠΈΠ²ΠΎΠ΄ΠΈΡ ΠΊ Π²ΡΠ½ΠΎΡΡ ΠΏΠΈΡΠ°ΡΠ΅Π»ΡΠ½ΡΡ
ΡΠ»Π΅ΠΌΠ΅Π½ΡΠΎΠ² ΠΈΠ· Π΅ΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΡ
Π·Π°ΠΏΠ°ΡΠΎΠ² ΠΎΡΠ³Π°Π½ΠΈΡΠ΅ΡΠΊΠΎΠΉ ΠΈ ΠΌΠΈΠ½Π΅ΡΠ°Π»ΡΠ½ΠΎΠΉ ΡΠ°ΡΡΠΈ ΠΏΠΎΡΠ²Ρ ΠΌΠΈΠΊΡΠΎΡΠ»ΠΎΡΠΎΠΉ. ΠΡΠΈ ΡΡΠΎΠΌ ΡΠΏΠΎΡΠΎΠ±Ρ ΠΈ ΡΡΠΎΠΊΠΈ Π²Π½Π΅ΡΠ΅Π½ΠΈΡ ΠΌΠΈΠ½Π΅ΡΠ°Π»ΡΠ½ΡΡ
ΡΠ΄ΠΎΠ±ΡΠ΅Π½ΠΈΠΉ Π½Π΅ΠΎΠ±Ρ
ΠΎΠ΄ΠΈΠΌΠΎ ΡΠ²ΡΠ·ΡΠ²Π°ΡΡ Ρ ΡΠ΅Ρ
Π½ΠΎΠ»ΠΎΠ³ΠΈΠ΅ΠΉ ΠΏΠΎΠ΄Π³ΠΎΡΠΎΠ²ΠΊΠΈ ΠΏΠΎΡΠ²Ρ ΠΈ Π²Π»Π°Π³ΠΎΠΎΠ±Π΅ΡΠΏΠ΅ΡΠ΅Π½Π½ΠΎΡΡΡΡ. ΠΠ·ΠΎΡ-Π½ΡΠ΅ ΡΠ΄ΠΎΠ±ΡΠ΅Π½ΠΈΡ ΠΈΠ·-Π·Π° ΠΈΡ
Π±ΡΡΡΡΠΎΠ³ΠΎ ΡΠ»Π΅ΡΡΡΠΈΠ²Π°Π½ΠΈΡ ΡΠ΅ΠΊΠΎΠΌΠ΅Π½Π΄ΡΠ΅ΡΡΡ Π²Π½ΠΎΡΠΈΡΡ ΠΏΠΎΠ΄ ΠΏΡΠ΅Π΄ΠΏΠΎΡΠ΅Π²Π½ΡΡ ΠΊΡΠ»ΡΡΠΈΠ²Π°-ΡΠΈΡ Ρ Π·Π°Π΄Π΅Π»ΠΊΠΎΠΉ Π² ΠΏΠΎΠ²Π΅ΡΡ
Π½ΠΎΡΡΠ½ΡΠΉ ΡΠ»ΠΎΠΉ, Π° ΡΠΎΡΡΠΎΡΠ½ΡΠ΅, ΠΊΠ°ΠΊ ΠΌΠ°Π»ΠΎΠΏΠΎΠ΄Π²ΠΈΠΆΠ½ΡΠ΅ β Π²ΠΌΠ΅ΡΡΠ΅ Ρ ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΎΠΉ ΠΏΠΎΡΠ²Ρ. Π ΡΠ²ΡΠ·ΠΈ Ρ ΡΡΠΈΠΌ Π² ΠΈΡΡΠ»Π΅Π΄ΠΎΠ²Π°Π½ΠΈΡΡ
ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎΠ³ΠΎ Π²Π»ΠΈΡΠ½ΠΈΡ ΡΠΏΠΎΡΠΎΠ±ΠΎΠ² ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΏΠΎΡΠ²Ρ Ρ Π²Π½Π΅ΡΠ΅Π½ΠΈΠ΅ΠΌ ΠΈ Π±Π΅Π· Π²Π½Π΅ΡΠ΅Π½ΠΈΡ Π°Π·ΠΎΡΠ° Π½Π° Π΅Π³ΠΎ Π΄ΠΈΠ½Π°ΠΌΠΈΠΊΡ ΠΏΠΎ ΡΠ»ΠΎΡΠΌ Π½Π΅ Π²ΡΡΠ²Π»Π΅Π½ΠΎ. ΠΠ»ΡΠ±ΠΎΠΊΠ°Ρ Π±Π΅Π·ΠΎΡΠ²Π°Π»ΡΠ½Π°Ρ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠ° ΠΏΠΎΡΠ²Ρ ΠΏΠΎΠ·Π²ΠΎΠ»ΡΠ΅Ρ ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΠΎ Π±ΠΎΠ»ΡΡΠ΅ Π½Π°ΠΊΠ°ΠΏΠ»ΠΈΠ²Π°ΡΡ ΠΈ Π΄ΠΎΠ»ΡΡΠ΅ ΡΠΎΡ
ΡΠ°Π½ΡΡΡ Π²Π»Π°Π³Ρ Π² ΠΏΠΎΡΠ²Π΅Π½Π½ΡΡ
ΡΠ»ΠΎΡΡ
; Π² ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΈ Ρ ΠΊΠ»Π°ΡΡΠΈΡΠ΅ΡΠΊΠΎΠΉ Π»Π΅ΠΌΠ΅ΡΠ½ΠΎ-ΠΎΡΠ²Π°Π»ΡΠ½ΠΎΠΉ Π²ΡΠΏΠ°ΡΠΊΠΎΠΉ ΠΈ ΠΏΠ»ΠΎΡΠΊΠΎΡΠ΅Π·Π½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΎΠΉ Π² ΠΌΠ΅ΡΡΠΎΠ²ΠΎΠΌ ΡΠ»ΠΎΠ΅ ΠΏΠΎΡΠ²Ρ Π΄ΠΎΠΏΠΎΠ»Π½ΠΈΡΠ΅Π»ΡΠ½ΡΠ΅ Π·Π°ΠΏΠ°ΡΡ Π²Π»Π°Π³ΠΈ ΠΏΠ΅ΡΠ΅Π΄ ΠΏΠΎΡΠ΅Π²ΠΎΠΌ ΠΊΡΠ»ΡΡΡΡΡ ΡΠΎΡΡΠ°Π²Π»Ρ-ΡΡ ΡΠΎΠΎΡΠ²Π΅ΡΡΡΠ²Π΅Π½Π½ΠΎ 300 ΠΈ 230 ΠΌ3/Π³Π°, Π² ΡΠ°Π·Ρ ΡΡΡΠ±ΠΊΠΎΠ²Π°Π½ΠΈΠ΅ β ΠΊΠΎΠ»ΠΎΡΠ΅Π½ΠΈΠ΅ ΡΡΠΌΠ΅Π½Ρ β 256 ΠΈ 189 ΠΌ3/Π³Π°, Π² ΡΠ°Π·Ρ ΠΌΠΎΠ»ΠΎΡΠ½ΠΎΠΉ ΡΠΏΠ΅Π»ΠΎΡΡΠΈ β 270 ΠΈ 128 ΠΌ3/Π³Π°. ΠΠ΅ΡΠΈΡΠΈΡ Π²Π»Π°Π³ΠΈ ΡΠ½ΠΈΠΆΠ°Π΅Ρ Π±ΠΈΠΎΠ»ΠΎΠ³ΠΈΡΠ΅ΡΠΊΡΡ Π°ΠΊΡΠΈΠ²Π½ΠΎΡΡΡ ΠΏΠΎΡΠ²Ρ, Π² ΡΠ²ΡΠ·ΠΈ Ρ ΡΡΠΈΠΌ Π²Π»Π°Π³ΠΎΡΠ±Π΅ΡΠ΅Π³Π°ΡΡΠΈΠ΅ ΡΠΏΠΎΡΠΎΠ±Ρ ΠΎΡΠ½ΠΎΠ²Π½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΈ ΠΏΠΎΡΠ²Ρ ΠΈΠΌΠ΅ΡΡ ΠΎΡΠΎΠ±Π΅Π½Π½ΠΎ Π±ΠΎΠ»ΡΡΠΎΠ΅ Π·Π½Π°ΡΠ΅Π½ΠΈΠ΅ Π² ΡΡΠ»ΠΎΠ²ΠΈΡΡ
Π½Π΅ΠΎΡΠΎΡΠ°Π΅ΠΌΠΎΠ³ΠΎ Π·Π΅ΠΌΠ»Π΅Π΄Π΅Π»ΠΈΡ Π½Π΅ ΡΠΎΠ»ΡΠΊΠΎ Π½Π° ΡΡΠΎΠΆΠ°ΠΉΠ½ΠΎΡΡΡ ΡΠ΅Π»ΡΡΠΊΠΎΡ
ΠΎΠ·ΡΠΉΡΡ-Π²Π΅Π½Π½ΡΡ
ΠΊΡΠ»ΡΡΡΡ, Π½ΠΎ ΠΈ Π½Π° ΠΏΡΠΎΡΠ΅ΡΡΡ Π³ΡΠΌΡΡΠΎΠΎΠ±ΡΠ°Π·ΠΎΠ²Π°Π½ΠΈΡ. Π‘ΡΠΌΠΌΠ°ΡΠ½ΠΎΠ΅ Π½Π°ΠΊΠΎΠΏΠ»Π΅Π½ΠΈΠ΅ Π°ΠΌΠΈΠ½ΠΎΠΊΠΈΡΠ»ΠΎΡ Π² ΠΏΠΎΠ»Ρ-ΠΌΠ΅ΡΡΠΎΠ²ΠΎΠΌ ΡΠ»ΠΎΠ΅ Π² Π²Π°ΡΠΈΠ°Π½ΡΠ΅ Ρ Π³Π»ΡΠ±ΠΎΠΊΠΎΠΉ Π±Π΅Π·ΠΎΡΠ²Π°Π»ΡΠ½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΎΠΉ ΠΏΠΎΡΠ²Ρ ΠΏΠ΅ΡΠ΅Π΄ ΠΏΠΎΡΠ΅Π²ΠΎΠΌ ΡΡΠΌΠ΅Π½Ρ ΡΠΎΡΡΠ°Π²-Π»ΡΠ»ΠΎ 424 ΠΌΠΊΠ³ Π°ΠΌΠΈΠ½. / Π³ ΠΏΠΎΠ»ΠΎΡΠ½Π°, Π² ΡΠ°Π·Ρ ΡΡΡΠ±ΠΊΠΎΠ²Π°Π½ΠΈΠ΅ β ΠΊΠΎΠ»ΠΎΡΠ΅Π½ΠΈΠ΅ β 400 ΠΌΠΊΠ³ Π°ΠΌΠΈΠ½. / Π³ ΠΏΠΎΠ»ΠΎΡΠ½Π°, Π² ΡΠ°Π·Ρ ΠΌΠΎΠ»ΠΎΡΠ½ΠΎΠΉ ΡΠΏΠ΅Π»ΠΎΡΡΠΈ β 210 ΠΌΠΊΠ³ Π°ΠΌΠΈΠ½. / Π³ ΠΏΠΎΠ»ΠΎΡΠ½Π°. ΠΠΎΠ»ΡΡΠ΅Π½Π½ΡΠ΅ Π·Π½Π°ΡΠ΅Π½ΠΈΡ Π²ΡΡΠ΅ Π² ΡΡΠ°Π²Π½Π΅Π½ΠΈΠΈ Ρ Π΄Π°Π½Π½ΡΠΌΠΈ ΠΏΠΎ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ ΠΈ Π²Π°ΡΠΈΠ°Π½ΡΡ Ρ ΠΏΠ»ΠΎΡΠΊΠΎΡΠ΅Π·Π½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΎΠΉ ΠΏΠΎΡΠ²Ρ Π½Π° 7 ΠΈ 18%, 48 ΠΈ 32%, 10 ΠΈ 36% ΡΠΎΠΎΡΠ²Π΅ΡΡΡ-Π²Π΅Π½Π½ΠΎ. ΠΠΎΠ»ΠΎΠΆΠΈΡΠ΅Π»ΡΠ½Π°Ρ Π΄ΠΈΠ½Π°ΠΌΠΈΠΊΠ° ΠΏΠΎ ΠΏΡΠΎΠ΄ΡΠΊΡΠΈΠ²Π½ΠΎΠΉ Π²Π»Π°Π³Π΅ ΠΈ Π½Π°ΠΊΠΎΠΏΠ»Π΅Π½ΠΈΡ Π°ΠΌΠΈΠ½ΠΎΠΊΠΈΡΠ»ΠΎΡ Π² Π²Π°ΡΠΈΠ°Π½ΡΠ΅ Ρ Π³Π»ΡΠ±ΠΎΠΊΠΎΠΉ Π±Π΅Π·ΠΎΡΠ²Π°Π»ΡΠ½ΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΎΠΉ ΠΏΠΎΡΠ²Ρ, Π²Π½Π΅ΡΠ΅Π½ΠΈΠ΅ΠΌ ΡΠ°ΡΡΠ΅ΡΠ½ΡΡ
Π΄ΠΎΠ· ΡΠΎΡΡΠΎΡΠ° ΠΏΠΎΠ΄ ΠΎΡΠ½ΠΎΠ²Π½ΡΡ ΠΎΠ±ΡΠ°-Π±ΠΎΡΠΊΡ ΠΈ Π°Π·ΠΎΡΠ° ΠΏΠΎΠ΄ ΠΏΡΠ΅Π΄ΠΏΠΎΡΠ΅Π²Π½ΡΡ ΠΊΡΠ»ΡΡΠΈΠ²Π°ΡΠΈΡ ΠΏΠΎΠ΄Π΅ΠΉΡΡΠ²ΠΎΠ²Π°Π»Π° Π½Π° ΡΡΡΠ΅ΡΡΠ²Π΅Π½Π½ΡΡ ΠΏΡΠΈΠ±Π°Π²ΠΊΡ Π·Π΅ΡΠ½Π° ΠΏΠΎ ΠΎΡΠ½ΠΎΡΠ΅Π½ΠΈΡ ΠΊ ΠΊΠΎΠ½ΡΡΠΎΠ»Ρ Π½Π° ΡΡΠΎΠ²Π½Π΅ 0,4 Ρ/Π³Π°, Π²Π°ΡΠΈΠ°Π½ΡΡ Ρ ΠΌΠ΅Π»ΠΊΠΎΠΉ ΠΎΠ±ΡΠ°Π±ΠΎΡΠΊΠΎΠΉ β Π½Π° ΡΡΠΎΠ²Π½Π΅ 0,35 Ρ/Π³Π°
ΠΡΠ΅Π½ΠΊΠ° Π΄ΠΈΠ½Π°ΠΌΠΈΡΠ΅ΡΠΊΠΎΠΉ ΡΠΎΡΡΠ°Π²Π»ΡΡΡΠ΅ΠΉ ΡΠ°Π±ΠΎΡΡ ΠΠΠ‘
Briefly the technique of assessing the impact of transient modes for comprehensive indicators on the toxicity of diesel or fuel efficiency, with respect to the NRTC test cycle for off-road equipment.ΠΡΠ°ΡΠΊΠΎ ΡΠ°ΡΡΠΌΠΎΡΡΠ΅Π½Π° ΠΌΠ΅ΡΠΎΠ΄ΠΈΠΊΠ° ΠΎΡΠ΅Π½ΠΊΠΈ Π²Π»ΠΈΡΠ½ΠΈΡ Π½Π΅ΡΡΡΠ°Π½ΠΎΠ²ΠΈΠ²ΡΠΈΡ
ΡΡ ΡΠ΅ΠΆΠΈΠΌΠΎΠ² ΡΠ°Π±ΠΎΡΡ Π½Π° ΠΈΠ½ΡΠ΅Π³ΡΠ°Π»ΡΠ½ΡΠ΅ ΠΏΠΎΠΊΠ°Π·Π°ΡΠ΅Π»ΠΈ Π΄ΠΈΠ·Π΅Π»Ρ ΠΏΠΎ ΡΠΎΠΊΡΠΈΡΠ½ΠΎΡΡΠΈ ΠΈΠ»ΠΈ ΡΠΎΠΏΠ»ΠΈΠ²Π½ΠΎΠΉ ΡΠΊΠΎΠ½ΠΎΠΌΠΈΡΠ½ΠΎΡΡΠΈ, ΠΏΡΠΈΠΌΠ΅Π½ΠΈΡΠ΅Π»ΡΠ½ΠΎ ΠΊ Π΅Π·Π΄ΠΎΠ²ΠΎΠΌΡ ΡΠΈΠΊΠ»Ρ NRTC Π΄Π»Ρ Π²Π½Π΅Π΄ΠΎΡΠΎΠΆΠ½ΠΎΠΉ ΡΠ΅Ρ
Π½ΠΈΠΊΠΈ
Electroerosive Powder Obtained from Alloy VK8 Waste into Butanol
The results of studies of the properties of the powders obtained by electroerosive dispersing of the hard alloy
wastes of mark VK8 in butanol. It is found that the powder particles obtained by electroerosive dispersing
of waste carbide grade VK8 in butyl alcohol, consist of the following major elements: W, Co, Fe, C and O
- β¦