Electron energy loss spectroscopy determination of Ti oxidation state at the (001) LaAlO3/SrTiO3 interface as a function of LaAlO3 growth conditions

At the (001) interface between the two band-insulators LaAlO3 and SrTiO3, a high-mobility electron gas may appear, which has been the object of numerous works over the last four years. Its origin is a subject of debate between the interface polarity and unintended doping. Here we use electron energy loss 'spectrum images', recorded in cross-section in a scanning transmission electron microscope, to analyse the Ti3+ ratio, characteristic of extra electrons. We find an interface concentration of Ti3+ that depends on growth conditions.Comment: 6 page

Crossbar operation of BiFeO3/Ce–CaMnO3 ferroelectric tunnel junctions: From materials to integration

Ferroelectric Tunnel Junctions (FTJs) are a candidate for the hardware realization of synapses in artificial neural networks. The fabrication process for a 784 x 100 crossbar array of 500 nm large FTJs, exhibiting effective On/Off currents ratio in the range 50-100, is presented. First, the epitaxial 4 nm-BiFeO3/Ca0.96Ce0.04MnO3//YAlO3 is combined with Ni electrodes. The oxidation of Ni during the processing affects the polarity of the FTJ and the On/ Off ratio, which becomes comparable to that of CMOS-compatible HfZrO4 junctions. The latter have a wider coercive field distribution: consequently, in test crossbar arrays, BiFeO3 exhibits a smaller cross-talk than HfZrO4. Furthermore, the relatively larger threshold for ferroelectric switching in BiFeO3 allows the use application of half-programming schemes for supervised and unsupervised learning. Second, the heterostructure is combined with W and Pt electrodes. The design is optimized for the controlled collapse chip connection to neuromorphic circuits.ISSN:0884-2914ISSN:2044-532

Ultra-low damping insulating magnetic thin films get perpendicular

A magnetic material combining both low losses and strong perpendicular magnetic anisotropy (PMA) was so far missing in the field of magnon-spintronics. The authors here report on Bismuth doped YIG nanometer thick films showing both PMA and low magnetic losses for ultra-thin PMA materials

Polar Chirality in BiFeO 3 Emerging from A Peculiar Domain Wall Sequence

International audienceTopological states are currently gathering intensive investigation in condensed matter physics due to their potential as configurable electronic devices for the future era coined "topotronics". Beyond numerous breakthroughs in magnetism over the last decade, a new paradigm is emerging with the proposal of topologically-protected objects in ferroelectric materials. Recently, ferroelectric skyrmions and vortices were observed in PbTiO3/SrTiO3 superlattices, opening the path towards ultra-small topological objects with low-power electric-field control. Here we report the observation of chiral polar windings in a single epitaxial thin film, triggered by its self-organized stripe domain pattern arrangement. Combining resonant elastic X-ray scattering and scanning transmission electron microscopy, we show signatures of polar chirality in epitaxial BiFeO3 thin films corroborated with a complex ferroelectric domain wall structure. The net chirality suggests that domain walls induce a polar rotation through a small path alternating with an unexpected long path at every second domain wall. In addition, scanning probe microscopy reveals singularities associated to this peculiar domain wall structure. These results bring new insights into the unexpected complexity of standard striped-domain BiFeO3 thin films and open questions as for the driving force of this polar chirality

Finite Size Effects in Antiferromagnetic Highly Strained BiFeO 3 Multiferroic Films

International audienceAbstract Epitaxially strain‐engineered tetragonal (T)‐like BiFeO 3 (BFO) is a multiferroic material with unique crystallographic and physical properties compared to its bulk rhombohedral parent. While the effect of this structural change on ferroelectric properties is understood, the influence on correlated antiferromagnetic (AFM) properties, especially with reduced film thickness, is less clear. Here, the AFM behavior of T‐like BFO films 9–58 nm thick on LaAlO 3 (001) substrates fabricated by pulsed laser deposition was studied using conversion electron Mössbauer spectroscopy and X‐ray diffraction. The key findings include: i) Ultrathin T‐like BFO films (<10 nm) show a decoupling of magnetic and structural transitions, with the polar vector tilted 32 degrees from [001] in 9–13 nm films. ii) Films thinner than 13 nm exhibit no structural transition down to 150 K, with a Néel (T N ) transition at ≈290 K, ≈35 K lower than thicker films. Interestingly, the T N scaling with thickness suggests realistic scaling exponents considering a critical correlation length for C‐type AFM order, rather than G‐type. The results show that finite size effects can tailor transition temperatures and modulate AFM wave modes in antiferromagnetic oxides, with implications for AFM spintronics for future information technologies

Finite Size Effects in Antiferromagnetic Highly Strained BiFeO 3 Multiferroic Films

International audienceAbstract Epitaxially strain‐engineered tetragonal (T)‐like BiFeO 3 (BFO) is a multiferroic material with unique crystallographic and physical properties compared to its bulk rhombohedral parent. While the effect of this structural change on ferroelectric properties is understood, the influence on correlated antiferromagnetic (AFM) properties, especially with reduced film thickness, is less clear. Here, the AFM behavior of T‐like BFO films 9–58 nm thick on LaAlO 3 (001) substrates fabricated by pulsed laser deposition was studied using conversion electron Mössbauer spectroscopy and X‐ray diffraction. The key findings include: i) Ultrathin T‐like BFO films (<10 nm) show a decoupling of magnetic and structural transitions, with the polar vector tilted 32 degrees from [001] in 9–13 nm films. ii) Films thinner than 13 nm exhibit no structural transition down to 150 K, with a Néel (T N ) transition at ≈290 K, ≈35 K lower than thicker films. Interestingly, the T N scaling with thickness suggests realistic scaling exponents considering a critical correlation length for C‐type AFM order, rather than G‐type. The results show that finite size effects can tailor transition temperatures and modulate AFM wave modes in antiferromagnetic oxides, with implications for AFM spintronics for future information technologies

Temperature-independent ferromagnetic resonance shift in Bi doped YIG garnets through magnetic anisotropy tuning

International audienceThin garnet films are becoming central for magnon-spintronics and spin-orbitronics devices as they show versatile magnetic properties together with low magnetic losses. These fields would benefit from materials in which heat does not affect the magnetization dynamics, an effect known as the non-linear thermal frequency shift. In this study, low damping Bi substituted Iron garnet (Bi:YIG) ultra-thin films have been grown using Pulsed Laser Deposition. Through a fine tuning of the growth parameters, the precise control of the perpendicular magnetic anisotropy allows to achieve a full compensation of the dipolar magnetic anisotropy. Strikingly, once the growth conditions are optimized, varying the growth temperature from 405 °C to 475 °C as the only tuning parameter induces the easy-axis to go from out-of-plane to in-plane. For films that are close to the dipolar compensation, Ferromagnetic Resonance measurements yield an effective magnetization µ$_0$M$_{eff}$ (T) that has almost no temperature dependence over a large temperature range (260 K to 400 K) resulting in an anisotropy temperature exponent of 2. These findings put Bi:YIG system among the very few materials in which the temperature dependence of the magnetic anisotropy varies at the same rate than the saturation magnetization. This interesting behavior is ascribed phenomenologically to the sizable orbital moment of Bi$^{3+}

Voltage-Controlled Reconfigurable Magnonic Crystal at the Sub-micrometer Scale

International audienceMultiferroics offer an elegant means to implement voltage-control and on the fly reconfigurability in microscopic, nanoscaled systems based on ferromagnetic materials. These properties are particularly interesting for the field of magnonics, where spin waves are used to perform advanced logical or analogue functions. Recently, the emergence of nano-magnonics is expected to eventually lead to the large-scale integration of magnonic devices. However, a compact voltage-controlled, on demand reconfigurable magnonic system has yet to be shown. Here, we introduce the combination of multiferroics with ferromagnets in a fully epitaxial heterostructure to achieve such voltagecontrolled and reconfigurable magnonic systems. Imprinting a remnant electrical polarization in thin multiferroic BiFeO 3 with a periodicity of 500 nm yields a modulation of the effective magnetic field in the micron-scale, ferromagnetic La 2/3 Sr 1/3 MnO 3 magnonic waveguide. We evidence the magneto-electrical coupling by characterizing the spin wave propagation spectrum in this artificial, voltage induced, magnonic crystal and demonstrate the occurrence of a robust magnonic bandgap with > 20 dB rejection

Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO3 Multiferroic Films

International audienceIn ferroelectric thin films, the domain structure defines ferroelectric switching pathways and thus influences device performance. In epitaxial bismuth ferrite (BiFeO3) films, fractal-like domains have been observed, but direct evidence of their origins has remained unclear. Here, we show that the nature of the ferroelectric domain structure-i.e. striped vs. fractal-like-in epitaxial BiFeO3 is defined by the strain profile across the film-substrate interface. In samples with fractal-like domains, X-ray diffraction analysis reveals strong strain gradients, while geometric phase analysis using atomic resolution scanning transmission electron microscopy reveals that within a few nanometers of the film-substrate interface, the out of plane strain shows an anomalous dip while the in-plane strain is constant. Electron energy-loss near edge structure at the oxygen K edge shows that in the vicinity of the interface, the oxygen coordination is locally modified; this combined with the anomalous strain behavior thus drives the formation of fractal-like domains. Conversely, if uniform strain is maintained across the interface, characteristic striped domains are formed. Interestingly, conversion from the fractal-like arrangement to striped domains is found possible by an ex-situ thermal treatment step. Critically, the antiferromagnetic state of the BiFeO3 is influenced by the domain structure, whereby the fractal-like domains disrupt the long-range spin cycloid. Finally, as a demonstration of the applicability of this concept, we show that a carefully engineered lower electrode with large strain gradient can be used to induce fractal domains

Interfacial Strain Gradients Control Nanoscale Domain Morphology in Epitaxial BiFeO3 Multiferroic Films

International audienceIn ferroelectric thin films, the domain structure defines ferroelectric switching pathways and thus influences device performance. In epitaxial bismuth ferrite (BiFeO3) films, fractal-like domains have been observed, but direct evidence of their origins has remained unclear. Here, we show that the nature of the ferroelectric domain structure-i.e. striped vs. fractal-like-in epitaxial BiFeO3 is defined by the strain profile across the film-substrate interface. In samples with fractal-like domains, X-ray diffraction analysis reveals strong strain gradients, while geometric phase analysis using atomic resolution scanning transmission electron microscopy reveals that within a few nanometers of the film-substrate interface, the out of plane strain shows an anomalous dip while the in-plane strain is constant. Electron energy-loss near edge structure at the oxygen K edge shows that in the vicinity of the interface, the oxygen coordination is locally modified; this combined with the anomalous strain behavior thus drives the formation of fractal-like domains. Conversely, if uniform strain is maintained across the interface, characteristic striped domains are formed. Interestingly, conversion from the fractal-like arrangement to striped domains is found possible by an ex-situ thermal treatment step. Critically, the antiferromagnetic state of the BiFeO3 is influenced by the domain structure, whereby the fractal-like domains disrupt the long-range spin cycloid. Finally, as a demonstration of the applicability of this concept, we show that a carefully engineered lower electrode with large strain gradient can be used to induce fractal domains