747 research outputs found

    Effects of varying oxygen partial pressure on molten silicon-ceramic substrate interactions

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    The silicon sessile drop contact angle was measured on hot pressed silicon nitride, silicon nitride coated on hot pressed silicon nitride, silicon carbon coated on graphite, and on Sialon to determine the degree to which silicon wets these substances. The post-sessile drop experiment samples were sectioned and photomicrographs were taken of the silicon-substrate interface to observe the degree of surface dissolution and degradation. Of these materials, silicon did not form a true sessile drop on the SiC on graphite due to infiltration of the silicon through the SiC coating, nor on the Sialon due to the formation of a more-or-less rigid coating on the liquid silicon. The most wetting was obtained on the coated Si3N4 with a value of 42 deg. The oxygen concentrations in a silicon ribbon furnace and in a sessile drop furnace were measured using the protable thoria-yttria solid solution electrolyte oxygen sensor. Oxygen partial pressures of 10 to the minus 7 power atm and 10 to the minus 8 power atm were obtained at the two facilities. These measurements are believed to represent nonequilibrium conditions

    Simplified Solar Tracking Prototype

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    Ti3SiC2-formation during Ti–C–Si multilayer deposition by magnetron sputtering at 650 °C

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    Titanium Silicon Carbide films were deposited from three separate magnetrons with elemental targets onto Si wafer substrates. The substrate was moved in a circular motion such that the substrate faces each magnetron in turn and only one atomic species (Ti, Si or C) is deposited at a time. This allows layer-by-layer film deposition. Material average composition was determined to Ti0.47Si0.14C0.39 by energy-dispersive X-ray spectroscopy. High-resolution transmission electron microscopy and Raman spectroscopy were used to gain insights into thin film atomic structure arrangements. Using this new deposition technique formation of Ti3SiC2 MAX phase was obtained at a deposition temperature of 650 °C, while at lower temperatures only silicides and carbides are formed. Significant sharpening of Raman E2g and Ag peaks associated with Ti3SiC2 formation was observed

    Sporopollenin, a natural copolymer, is robust under high hydrostatic pressure

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    Lycopodium sporopollenin, a natural copolymer, shows exceptional stability under high hydrostatic pressures (10 GPa) as determined by in situ high pressure synchrotron source FTIR spectroscopy. This stability is evaluated in terms of the component compounds of the sporopollenin: p-coumaric acid, phloretic acid, ferulic acid, and palmitic and sebacic acids, which represent the additional n-acid and ndiacid components. This high stability is attributed to interactions between these components, rather than the exceptional stability of any one molecular component. We propose a biomimetic solution for the creation of polymer materials that can withstand high pressures for a multitude of uses in aeronautics, vascular autografts, ballistics and light-weight protective materials

    Power, Control and Optimization

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    The guest editors are very grateful to all the collaborators of the journal, for their welcoming and approval of this special issue and for their guidance, help, and close advice at every stage. We guest editors wish all the readers an enjoyable, instructive, and inspiring study of the contributions of this journal special issue. Indeed, we cordially hope that our special issue will represent this journal as a rising and premium journal of science, which strongly supports research, education, and development everywhere on the globe

    Study program to develop and evaluate die and container materials for the growth of silicon ribbons

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    The development and evaluation of proprietary coatings of pure silicon carbide, silicon nitride, and aluminum nitride on less pure hot pressed substrates of the respective ceramic materials, is described. Silicon sessile drop experiments were performed on coated test specimens under controlled oxygen partial pressure. Prior to testing, X-ray diffraction and SEM characterization was performed. The reaction interfaces were characterized after testing with optical and scanning electron microscopy and Auger electron spectroscopy. Increasing the oxygen partial pressure was found to increase the molten silicon contact angle, apparently because adsorbed oxygen lowers the solid-vapor interfacial free energy. It was also found that adsorbed oxygen increased the degree of attack of molten silicon upon the chemical vapor deposited coatings. Cost projections show that reasonably priced, coated, molten silicon resistant refractory material shapes are obtainable

    Comparison of thermal stability in MAX211 and 312 phases

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    The susceptibility of four MAX phases (Ti2AlC, Cr2AlC, Ti3AlC2, and Ti3SiC2) to high-temperature thermal dissociation in vacuum has been investigated using in-situ neutron diffraction. In high vacuum, these phases decomposed above 1400°C through the sublimation of M and A elements, forming a surface coating of MC. The apparent activation energies for the decomposition of sintered Ti3SiC2, Ti3AlC2, and Ti2AlC were determined to be 179.3, -71.9, and 85.7 kJ mol−1, respectively. The spontaneous release of Ti2AlC and TiC from de-intercalation during decomposition of Ti3AlC2 resulted in a negative activation energy

    Electronic structure investigation of Ti3AlC2, Ti3SiC2, and Ti3GeC2 by soft-X-ray emission spectroscopy

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    The electronic structures of epitaxially grown films of Ti3AlC2, Ti3SiC2 and Ti3GeC2 have been investigated by bulk-sensitive soft X-ray emission spectroscopy. The measured high-resolution Ti L, C K, Al L, Si L and Ge M emission spectra are compared with ab initio density-functional theory including core-to-valence dipole matrix elements. A qualitative agreement between experiment and theory is obtained. A weak covalent Ti-Al bond is manifested by a pronounced shoulder in the Ti L-emission of Ti3AlC2. As Al is replaced with Si or Ge, the shoulder disappears. For the buried Al and Si-layers, strongly hybridized spectral shapes are detected in Ti3AlC2 and Ti3SiC2, respectively. As a result of relaxation of the crystal structure and the increased charge-transfer from Ti to C, the Ti-C bonding is strengthened. The differences between the electronic structures are discussed in relation to the bonding in the nanolaminates and the corresponding change of materials properties.Comment: 15 pages, 8 figure
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