Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures

Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics

Carbon-assisted chemical vapor deposition of hexagonal boron nitride

We show that in a low-pressure chemical vapor deposition (CVD) system, the residual oxygen and/or air play a crucial role in the mechanism of the growth of hexagonal boron nitride (h-BN) films on Ni foil 'enclosures'. Hexagonal-BN films grow on the Ni foil surface via the formation of an intermediate boric-oxide (BOx) phase followed by a thermal reduction of the BOx by a carbon source (either amorphous carbon powder or methane), leading to the formation of single-and bi-layer h-N. Low energy electron microscopy (LEEM) and diffraction (LEED) were used to map the number of layers over large areas; Raman spectroscopy, time-of-flight secondary ion mass spectrometry (ToF-SIMS), x-ray photoelectron spectroscopy (XPS) and scanning tunneling microscopy (STM) were used to characterize the structure and physical quality of the ultra-thin h-BN film. The growth procedure reported here leads to a better understanding and control of the synthesis of ultra-thin h-BN films

WSe_(2-x)Te_x alloys grown by molecular beam epitaxy

The growth of WSe(2-x)Tex alloys by molecular beam epitaxy has been demonstrated for the first time to investigate the phase transition from the semiconducting 2H phase to the semi-metallic 1T’ phase as a function of Te concentration. Up to 14% Te incorporation, stable alloys in the semiconducting 2H phase are achieved while above 79% Te incorporation, stable alloys in the semi-metallic 1T’ phase are obtained. Our results indicate the MBE-grown WSe(2-x)Tex alloys exhibit a miscibility gap from 14% to 79% Te concentrations at a growth temperature of 250 °C, a temperature compatible with direct vertical back-end-of-line integration. This miscibility gap results in phase separation of two different alloys, both with different composition and crystal structure. While the alloying of small Te concentrations does indeed result in a desired reduction of the semiconducting bandgap, the phase separation above 14% Te incorporation prohibits bandgap tuning for a wider range of applications. These results highlight the competing energies and kinetics associated with producing uniform WSe(2-x)Tex alloys

Impact of etch processes on the chemistry and surface states of the topological insulator Bi2Se3

The unique properties of topological insulators such as Bi2Se3 are intriguing for their potential implementation in novel device architectures for low power and defect-tolerant logic and memory devices. Recent improvements in the synthesis of Bi2Se3 have positioned researchers to fabricate new devices to probe the limits of these materials. The fabrication of such devices, of course, requires etching of the topological insulator, in addition to other materials including gate oxides and contacts which may impact the topologically protected surface states. In this paper, we study the impact of He+ sputtering and inductively coupled plasma Cl2 and SF6 reactive etch chemistries on the physical, chemical, and electronic properties of Bi2Se3. Chemical analysis by X-ray photoelectron spectroscopy tracks changes in the surface chemistry and Fermi level, showing preferential removal of Se that results in vacancy-induced n-type doping. Chlorine-based chemistry successfully etches Bi2Se3 but with residual Se–Se bonding and interstitial Cl species remaining after the etch. The Se vacancies and residuals can be removed with postetch anneals in a Se environment, repairing Bi2Se3 nearly to the as-grown condition. Critically, in each of these cases, angle-resolved photoemission spectroscopy (ARPES) reveals that the topologically protected surface states remain even after inducing significant surface disorder and chemical changes, demonstrating that topological insulators are quite promising for defect-tolerant electronics. Changes to the ARPES intensity and momentum broadening of the surface states are discussed. Fluorine-based etching aggressively reacts with the film resulting in a relatively thick insulating film of thermodynamically favored BiF3 on the surface, prohibiting the use of SF6-based etching in Bi2Se3 processing

Engineering the interface chemistry for scandium electron contacts in WSe2 transistors and diodes

Sc has been employed as an electron contact to a number of two-dimensional (2D) materials (e.g. MoS2, black phosphorous) and has enabled, at times, the lowest electron contact resistance. However, the extremely reactive nature of Sc leads to stringent processing requirements and metastable device performance with no true understanding of how to achieve consistent, high-performance Sc contacts. In this work, WSe2 transistors with impressive subthreshold slope (109 mV dec−1) and I ON/I OFF (106) are demonstrated without post-metallization processing by depositing Sc contacts in ultra-high vacuum (UHV) at room temperature (RT). The lowest electron Schottky barrier height (SBH) is achieved by mildly oxidizing the WSe2 in situ before metallization, which minimizes subsequent reactions between Sc and WSe2. Post metallization anneals in reducing environments (UHV, forming gas) degrade the I ON/I OFF by ~103 and increase the subthreshold slope by a factor of 10. X-ray photoelectron spectroscopy indicates the anneals increase the electron SBH by 0.4–0.5 eV and correspondingly convert 100% of the deposited Sc contacts to intermetallic or scandium oxide. Raman spectroscopy and scanning transmission electron microscopy highlight the highly exothermic reactions between Sc and WSe2, which consume at least one layer RT and at least three layers after the 400 °C anneals. The observed layer consumption necessitates multiple sacrificial WSe2 layers during fabrication. Scanning tunneling microscopy/spectroscopy elucidate the enhanced local density of states below the WSe2 Fermi level around individual Sc atoms in the WSe2 lattice, which directly connects the scandium selenide intermetallic with the unexpectedly large electron SBH. The interface chemistry and structural properties are correlated with Sc–WSe2 transistor and diode performance. The recommended combination of processing conditions and steps is provided to facilitate consistent Sc contacts to WSe2

Surfaces d'alliages métalliques complexes : structure, propriétés et nanostructuration

We report the investigation of pseudo-ten-fold surfaces on two complex metallic alloys considered as approximants to the decagonal quasicristal. The atomic and electronic structure of the both samples is investigated by means of a multi-technique approach supported by ab initio electronic structure calculations. The main termination of the (100) surface of Al13Co4 is attributed to an incomplete puckered layer. The (010) surface of Al3(Mn, Pd) exhibits an important amount of structural imperfections. With the exception of several vacancies, this surface is identical to the complete puckered layer. In a second stage, both surfaces have been used as templates for the growth of metallic thin films. On both surfaces, Pb adatoms adopt a pseudomorphic growth mode up to one monolayer. For the Al13Co4 surface, the sticking coefficient of Pb vanishes upon the completion of the monolayer. However, it remains sufficient for the growth of additional layers on the Al3(Mn, Pd) (010) surface. The adsorption of Cu on the Al13Co4 surface follows also a pseudomorphic growth mode up to one monolayer. The ß-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the b-phase is followed by the formation of the g-Al4Cu9 phase. Both b and g phases grow as two (110) domains rotated by 72° from each otherCe travail a permis de déterminer les structures atomique et électronique de deux surfaces d'alliages métalliques complexes à l'aide d'une approche multi-techniques supportée par des calculs ab intio de structure électronique. Les surfaces de ces cristaux ont pu être corrélées à certains plans présents dans les modèles structuraux disponibles. La terminaison dominante de la surface (100) d'Al13Co4 est identifiée comme un plan corrugué incomplet du volume. La surface (010) de Al3(Mn, Pd) présente un nombre conséquent d'imperfections structurales. À l'exception de certains sites lacunaires, elle est identique au plan corrugué complet du massif. Dans une seconde étape, ces échantillons ont été utilisés comme substrat pour la croissance de films minces métalliques. Les atomes de Pb déposés sur ces deux surfaces suivent un mode de croissance pseudomorphique jusqu'à la formation de la monocouche. Dans le cas de l'Al13Co4, le coefficient de collage du Pb s'annule une fois cette monocouche formée. Sur la surface Al3(Mn, Pd), le croissance de couches additionnelles de Pb est observée. L'adsorption du Cu sur Al13Co4 mène de nouveau à un mode de croissance pseudomorphique jusqu'à la monocouche. Au-delà de ce dépôt, la phase ß-Al(Cu, Co) apparaît en surface. Pour des dépôts à des températures plus élevées, la phase- ß est suivie par la formation de la phase g-Al4Cu9. Les phases b et g croissent suivant deux domaines (110) orientés l'un par rapport à l'autre avec un angle de 72

Complexe metallic alloys surfaces : structure, properties and nanostructuration

Ce travail a permis de déterminer les structures atomique et électronique de deux surfaces d'alliages métalliques complexes à l'aide d'une approche multi-techniques supportée par des calculs ab intio de structure électronique. Les surfaces de ces cristaux ont pu être corrélées à certains plans présents dans les modèles structuraux disponibles. La terminaison dominante de la surface (100) d'Al13Co4 est identifiée comme un plan corrugué incomplet du volume. La surface (010) de Al3(Mn, Pd) présente un nombre conséquent d'imperfections structurales. À l'exception de certains sites lacunaires, elle est identique au plan corrugué complet du massif. Dans une seconde étape, ces échantillons ont été utilisés comme substrat pour la croissance de films minces métalliques. Les atomes de Pb déposés sur ces deux surfaces suivent un mode de croissance pseudomorphique jusqu'à la formation de la monocouche. Dans le cas de l'Al13Co4, le coefficient de collage du Pb s'annule une fois cette monocouche formée. Sur la surface Al3(Mn, Pd), le croissance de couches additionnelles de Pb est observée. L'adsorption du Cu sur Al13Co4 mène de nouveau à un mode de croissance pseudomorphique jusqu'à la monocouche. Au-delà de ce dépôt, la phase ß-Al(Cu, Co) apparaît en surface. Pour des dépôts à des températures plus élevées, la phase- ß est suivie par la formation de la phase ?-Al4Cu9. Les phases ß et ? croissent suivant deux domaines (110) orientés l'un par rapport à l'autre avec un angle de 72°We report the investigation of pseudo-ten-fold surfaces on two complex metallic alloys considered as approximants to the decagonal quasicristal. The atomic and electronic structure of the both samples is investigated by means of a multi-technique approach supported by ab initio electronic structure calculations. The main termination of the (100) surface of Al13Co4 is attributed to an incomplete puckered layer. The (010) surface of Al3(Mn, Pd) exhibits an important amount of structural imperfections. With the exception of several vacancies, this surface is identical to the complete puckered layer. In a second stage, both surfaces have been used as templates for the growth of metallic thin films. On both surfaces, Pb adatoms adopt a pseudomorphic growth mode up to one monolayer. For the Al13Co4 surface, the sticking coefficient of Pb vanishes upon the completion of the monolayer. However, it remains sufficient for the growth of additional layers on the Al3(Mn, Pd) (010) surface. The adsorption of Cu on the Al13Co4 surface follows also a pseudomorphic growth mode up to one monolayer. The ß-Al(Cu, Co) phase appears for coverages greater than one monolayer. For higher temperature deposition, the ß-phase is followed by the formation of the ?-Al4Cu9 phase. Both ß and ? phases grow as two (110) domains rotated by 72° from each othe