Optical Response of Sr2_2RuO4_4 Reveals Universal Fermi-liquid Scaling and Quasiparticles Beyond Landau Theory

We report optical measurements demonstrating that the low-energy relaxation rate ($1/\tau$) of the conduction electrons in Sr$_2$RuO$_4$ obeys scaling relations for its frequency ($\omega$) and temperature ($T$) dependence in accordance with Fermi-liquid theory. In the thermal relaxation regime, 1/\tau\propto (\hbar\omega)^2 + (p\pi\kB T)^2 with $p=2$, and $\omega/T$ scaling applies. Many-body electronic structure calculations using dynamical mean-field theory confirm the low-energy Fermi-liquid scaling, and provide quantitative understanding of the deviations from Fermi-liquid behavior at higher energy and temperature. The excess optical spectral weight in this regime provides evidence for strongly dispersing "resilient" quasiparticle excitations above the Fermi energy

Large modulation of the Shubnikov-de Haas oscillations by the Rashba interaction at the LaAlO3_{3}/SrTiO3_{3} interface

We investigate the 2-dimensional Fermi surface of high-mobility LaAlO$_3$/SrTiO$_3$ interfaces using Shubnikov-de Haas oscillations. Our analysis of the oscillation pattern underscores the key role played by the Rashba spin-orbit interaction brought about by the breaking of inversion symmetry, as well as the dominant contribution of the heavy $d_{xz}$/$d_{yz}$ orbitals on electrical transport. We furthermore bring into light the complex evolution of the oscillations with the carrier density, which is tuned by the field effect

Breakup of the Fermi surface near the Mott transition in low-dimensional systems

We investigate the Mott transition in weakly-coupled one-dimensional (1d) fermionic chains. Using a generalization of Dynamic Mean Field Theory, we show that the Mott gap is suppressed at some critical hopping $t_{\perp}^{c2}$. The transition from the 1d insulator to a 2d metal proceeds through an intermediate phase where the Fermi surface is broken into electron and hole pockets. The quasiparticle spectral weight is strongly anisotropic along the Fermi surface, both in the intermediate and metallic phases. We argue that such pockets would look like `arcs' in photoemission experiments.Comment: REVTeX 4, 5 pages, 4 EPS figures. References added; problem with figure 4 fixed; typos correcte

Strong-coupling analysis of scanning tunneling spectra in Bi2_2Sr2_2Ca2_2Cu3_3O10+δ_{10+\delta}

We study a series of spectra measured in the superconducting state of optimally-doped Bi-2223 by scanning tunneling spectroscopy. Each spectrum, as well as the average of spectra presenting the same gap, is fitted using a strong-coupling model taking into account the band structure, the BCS gap, and the interaction of electrons with the spin resonance. After describing our measurements and the main characteristics of the strong-coupling model, we report the whole set of parameters determined from the fits, and we discuss trends as a function of the gap magnitude. We also simulate angle-resolved photoemission spectra, and compare with recent experimental results.Comment: Published versio

Countercurrent chromatography in analytical chemistry (IUPAC technical report)

© 2009 IUPACCountercurrent chromatography (CCC) is a generic term covering all forms of liquid-liquid chromatography that use a support-free liquid stationary phase held in place by a simple centrifugal or complex centrifugal force field. Biphasic liquid systems are used with one liquid phase being the stationary phase and the other being the mobile phase. Although initiated almost 30 years ago, CCC lacked reliable columns. This is changing now, and the newly designed centrifuges appearing on the market make excellent CCC columns. This review focuses on the advantages of a liquid stationary phase and addresses the chromatographic theory of CCC. The main difference with classical liquid chromatography (LC) is the variable volume of the stationary phase. There are mainly two different ways to obtain a liquid stationary phase using centrifugal forces, the hydrostatic way and the hydrodynamic way. These two kinds of CCC columns are described and compared. The reported applications of CCC in analytical chemistry and comparison with other separation and enrichment methods show that the technique can be successfully used in the analysis of plants and other natural products, for the separation of biochemicals and pharmaceuticals, for the separation of alkaloids from medical herbs, in food analysis, etc. On the basis of the studies of the last two decades, recommendations are also given for the application of CCC in trace inorganic analysis and in radioanalytical chemistry

Tunneling spectra of strongly coupled superconductors: Role of dimensionality

We investigate numerically the signatures of collective modes in the tunneling spectra of superconductors. The larger strength of the signatures observed in the high-Tc superconductors, as compared to classical low-Tc materials, is explained by the low dimensionality of these layered compounds. We also show that the strong-coupling structures are dips (zeros in the d2I/dV2 spectrum) in d-wave superconductors, rather than the steps (peaks in d2I/dV2) observed in classical s-wave superconductors. Finally we question the usefulness of effective density of states models for the analysis of tunneling data in d-wave superconductors.Comment: 8 pages, 6 figure

Multi-band Superconductivity in the Chevrel Phases SnMo6S8 and PbMo6S8

Sub-Kelvin scanning tunnelling spectroscopy in the Chevrel Phases SnMo6S8 and PbMo6S8 reveals two distinct superconducting gaps with Delta_1 = 3 meV, Delta_2 ~ 1.0 meV and Delta_1 = 3.1 meV, Delta_2 ~ 1.4 meV respectively. The gap distribution is strongly anisotropic, with Delta_2 predominantly seen when scanning across unit-cell steps on the (001) sample surface. The spectra are well-fitted by an anisotropic two-band BCS s-wave gap function. Our spectroscopic data are confirmed by electronic heat capacity measurements which also provide evidence for a twin-gap scenario.Comment: 5 pages, 4 figure

Node-like excitations in superconducting PbMo6S8 probed by scanning tunneling spectroscopy

We present the first scanning tunneling spectroscopy study on the Chevrel phase PbMo6S8, an extreme type II superconductor with a coherence length only slightly larger than in high-Tc cuprates. Tunneling spectra measured on atomically flat terraces are spatially homogeneous and show well-defined coherence peaks. The low-energy spectral weight, the zero bias conductance and the temperature dependence of the gap are incompatible with a conventional isotropic s-wave interpretation, revealing the presence of low-energy excitations in the superconducting state. We show that our data are consistent with the presence of nodes in the superconducting gap.Comment: To appear in PRB; 5 pages, 4 figure

Schottky barrier heights at polar metal/semiconductor interfaces

Using a first-principle pseudopotential approach, we have investigated the Schottky barrier heights of abrupt Al/Ge, Al/GaAs, Al/AlAs, and Al/ZnSe (100) junctions, and their dependence on the semiconductor chemical composition and surface termination. A model based on linear-response theory is developed, which provides a simple, yet accurate description of the barrier-height variations with the chemical composition of the semiconductor. The larger barrier values found for the anion- than for the cation-terminated surfaces are explained in terms of the screened charge of the polar semiconductor surface and its image charge at the metal surface. Atomic scale computations show how the classical image charge concept, valid for charges placed at large distances from the metal, extends to distances shorter than the decay length of the metal-induced-gap states.Comment: REVTeX 4, 11 pages, 6 EPS figure

Heterovalent interlayers and interface states: an ab initio study of GaAs/Si/GaAs (110) and (100) heterostructures

We have investigated ab initio the existence of localized states and resonances in abrupt GaAs/Si/GaAs (110)- and (100)-oriented heterostructures incorporating 1 or 2 monolayers (MLs) of Si, as well as in the fully developed Si/GaAs (110) heterojunction. In (100)-oriented structures, we find both valence- and conduction-band related near-band edge states localized at the Si/GaAs interface. In the (110) systems, instead, interface states occur deeper in the valence band; the highest valence-related resonances being about 1 eV below the GaAs valence-band maximum. Using their characteristic bonding properties and atomic character, we are able to follow the evolution of the localized states and resonances from the fully developed Si/GaAs binary junction to the ternary GaAs/Si/GaAs (110) systems incorporating 2 or 1 ML of Si. This approach also allows us to show the link between the interface states of the (110) and (100) systems. Finally, the conditions for the existence of localized states at the Si/GaAs (110) interface are discussed based on a Koster-Slater model developed for the interface-state problem.Comment: REVTeX 4, 14 pages, 15 EPS figure