1,083 research outputs found

    Density of near-extreme events

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    We provide a quantitative analysis of the phenomenon of crowding of near-extreme events by computing exactly the density of states (DOS) near the maximum of a set of independent and identically distributed random variables. We show that the mean DOS converges to three different limiting forms depending on whether the tail of the distribution of the random variables decays slower than, faster than, or as a pure exponential function. We argue that some of these results would remain valid even for certain {\em correlated} cases and verify it for power-law correlated stationary Gaussian sequences. Satisfactory agreement is found between the near-maximum crowding in the summer temperature reconstruction data of western Siberia and the theoretical prediction.Comment: 4 pages, 3 figures, revtex4. Minor corrections, references updated. This is slightly extended version of the Published one (Phys. Rev. Lett.

    A Dynamic Oligopoly with Collusion and Price Wars

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    Securonomics beyond the ‘first political question’: Power, people and place

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    This is the author accepted manuscript. The final version is available from Progressive Britain via the link in this recor

    What is securonomics? Look to Germany and Sweden for clues, not just the US

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    This is the author accepted manuscript. The final version is available from LabourList Limited via the link in this recor

    Controlled single electron transfer between Si:P dots

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    We demonstrate electrical control of Si:P double dots in which the potential is defined by nanoscale phosphorus doped regions. Each dot contains approximately 600 phosphorus atoms and has a diameter close to 30 nm. On application of a differential bias across the dots, electron transfer is observed, using single electron transistors in both dc- and rf-mode as charge detectors. With the possibility to scale the dots down to few and even single atoms these results open the way to a new class of precision-doped quantum dots in silicon.Comment: 3 figures, 3 page

    A graphene field-effect transistor as a molecule-specific probe of DNA nucleobases

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    © 2015 Macmillan Publishers Limited. All rights reserved. Fast and reliable DNA sequencing is a long-standing target in biomedical research. Recent advances in graphene-based electrical sensors have demonstrated their unprecedented sensitivity to adsorbed molecules, which holds great promise for label-free DNA sequencing technology. To date, the proposed sequencing approaches rely on the ability of graphene electric devices to probe molecular-specific interactions with a graphene surface. Here we experimentally demonstrate the use of graphene field-effect transistors (GFETs) as probes of the presence of a layer of individual DNA nucleobases adsorbed on the graphene surface. We show that GFETs are able to measure distinct coverage-dependent conductance signatures upon adsorption of the four different DNA nucleobases; a result that can be attributed to the formation of an interface dipole field. Comparison between experimental GFET results and synchrotron-based material analysis allowed prediction of the ultimate device sensitivity, and assessment of the feasibility of single nucleobase sensing with graphene

    Charge-based silicon quantum computer architectures using controlled single-ion implantation

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    We report a nanofabrication, control and measurement scheme for charge-based silicon quantum computing which utilises a new technique of controlled single ion implantation. Each qubit consists of two phosphorus dopant atoms ~50 nm apart, one of which is singly ionized. The lowest two energy states of the remaining electron form the logical states. Surface electrodes control the qubit using voltage pulses and dual single electron transistors operating near the quantum limit provide fast readout with spurious signal rejection. A low energy (keV) ion beam is used to implant the phosphorus atoms in high-purity Si. Single atom control during the implantation is achieved by monitoring on-chip detector electrodes, integrated within the device structure, while positional accuracy is provided by a nanomachined resist mask. We describe a construction process for implanted single atom and atom cluster devices with all components registered to better than 20 nm, together with electrical characterisation of the readout circuitry. We also discuss universal one- and two-qubit gate operations for this architecture, providing a possible path towards quantum computing in silicon.Comment: 9 pages, 5 figure
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