Gate Oxide Reliability and Deuterated CMOS Processing

In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. It appears as if this controversy finds its origin in the different stages (e.g. oxidation or post metal anneal) deuterium is introduced in the CMOS process. This paper investigates this in detail. The obtained results show that the hot carrier degradation only benefits from an isotope effect when deuterium is introduced in the post metal anneal. At the same time, charge to breakdown for high quality oxides does not benefit from an isotope effect, regardless of the processing stage deuterium is introduced, or the gate oxide thickness used. This is verified on two different sets of wafers fabricated in two different laboratories

The Impact of Deuterated CMOS processing on Gate Oxide Reliability

In recent literature, a controversy has arisen over the question whether deuterium improves the stability of the MOS gate dielectric. In particular, the influence of deuterium incorporation on the bulk oxide quality is not clear. In this letter, deuterium or hydrogen is introduced during either the gate oxidation, postoxidation anneal, and/or the postmetal anneal (PMA). The oxide bulk degradation was evaluated using charge-to-breakdown and stress-induced leakage current; and the oxide interface degradation using hot-carrier degradation and low-frequency noise. The obtained results show that the oxide bulk does not benefit from the presence of deuterium, regardless of the stage of deuterium introduction, or the gate oxide thickness. The oxide interface is more stable only when deuterium is introduced in the PMA

Enhanced piezoelectric properties of (110)-oriented PbZr1−xTixO3 epitaxial thin films on silicon substrates at shifted morphotropic phase boundary

Piezoelectrical, ferroelectrical, and structural properties of epitaxial pseudocubic (110)pc oriented 500 nm thick PbZr1−xTixO3 thin films, prepared by pulsed laser deposition on (001) silicon substrates, were measured as a function of composition. The dependence of the measurement data on the Ti content is explained by an abrupt transition from the rhombohedral r-phase to the tetragonal (c/a) 45 phase for x  ≈  0.6, indicating a shift of the Morphotropic Phase Boundary to this value, where the effective piezoelectric coefficient e3 1 ,eff and dielectric constant ε33 ,eff reach their maximum values. These findings are of great significance for Si-based piezo-micro electro mechanical systems, in particular energy harvesters. The largest value of the figure-of-merit for such devices was found for x  = 0.6, FOM=24.0 GP

Integrated transcriptomic and proteomic analyses ofP. falciparumgametocytes: molecular insight into sex-specific processes and translational repression

Sexual differentiation of malaria parasites into gametocytes in the vertebrate host and subsequent gamete fertilization in mosquitoes is essential for the spreading of the disease. The molecular processes orchestrating these transitions are far from fully understood. Here, we report the first transcriptome analysis of male and female Plasmodium falciparum gametocytes coupled with a comprehensive proteome analysis. In male gametocytes there is an enrichment of proteins involved in the formation of flagellated gametes; proteins involved in DNA replication, chromatin organization and axoneme formation. On the other hand, female gametocytes are enriched in proteins required for zygote formation and functions after fertilization; protein-, lipid- and energy-metabolism. Integration of transcriptome and proteome data revealed 512 highly expressed maternal transcripts without corresponding protein expression indicating large scale translational repression in P. falciparum female gametocytes for the first time. Despite a high degree of conservation between Plasmodium species, 260 of these 'repressed transcripts' have not been previously described. Moreover, for some of these genes, protein expression is only reported in oocysts and sporozoites indicating that repressed transcripts can be partitioned into short- and long-term storage. Finally, these data sets provide an essential resource for identification of vaccine/drug targets and for further mechanistic studies

Towards metal-organic framework based field effect chemical sensors: UiO-66-NH2 for nerve agent detection

We present a highly sensitive gas detection approach for the infamous 'nerve agent' group of alkyl phosphonate compounds. Signal transduction is achieved by monitoring the work function shift of metal-organic framework UiO-66-NH2 coated electrodes upon exposure to ppb-level concentrations of a target simulant. Using the Kelvin probe technique, we demonstrate the potential of electrically insulating MOFs for integration in field effect devices such as ChemFETs: a three orders of magnitude improvement over previous work function-based detection of nerve agent simulants. Moreover, the signal is fully reversible both in dry and humid conditions, down to low ppb concentrations. Comprehensive investigation of the interactions that lead towards this high sensitivity points towards a series of confined interactions between the analyte and the pore interior of UiO-66-NH2

Cantilevers-on-membrane design for broadband MEMS piezoelectric vibration energy harvesting

Most MEMS piezoelectric vibration energy harvesters involve either cantilever-based topologies, doubly-clamped beams or membrane structures. While these traditional designs offer simplicity, their frequency response for broadband excitation are typically inadequate. This paper presents a new integrated cantilever-on-membrane design that attempts to both optimise the strain distribution on a piezoelectric membrane resonator and improve the power responsiveness of the harvester for broadband excitation. While a classic membrane-based resonator has the potential to theoretically offer wider operational frequency bandwidth than its cantilever counterpart, the addition of a centred proof mass neutralises its otherwise high strain energy regions. The proposed topology addresses this issue by relocating the proof mass onto subsidiary cantilevers and integrates the merits of both the membrane and the cantilever designs. When experimentally subjected to a band-limited white noise excitation, up to approximately two folds of power enhancement was observed for the new membrane harvester compared to a classic plain membrane device

Probing the plateau-insulator quantum phase transition in the quantum Hall regime

We report quantum Hall experiments on the plateau-insulator transition in a low mobility In_{.53} Ga_{.47} As/InP heterostructure. The data for the longitudinal resistance \rho_{xx} follow an exponential law and we extract a critical exponent \kappa= .55 \pm .05 which is slightly different from the established value \kappa = .42 \pm .04 for the plateau transitions. Upon correction for inhomogeneity effects, which cause the critical conductance \sigma_{xx}^* to depend marginally on temperature, our data indicate that the plateau-plateau and plateau- insulator transitions are in the same universality class.Comment: 4 pages, 4 figures (.eps

Sn delta-doping in GaAs

We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at low temperatures and in high magnetic fields up to 38 T. Hall-effect and Shubnikov-de Haas measurements show that the electron densities reached are higher than for other delta-dopants, like Si and Be. The maximum carrier density determined by the Hall effect equals 8.4x10^13 cm^-2. For all samples several Shubnikov-de Haas frequencies were observed, indicating the population of multiple subbands. The depopulation fields of the subbands were determined by measuring the magnetoresistance with the magnetic field in the plane of the delta-layer. The experimental results are in good agreement with selfconsistent bandstructure calculations. These calculation shows that in the sample with the highest electron density also the conduction band at the L point is populated.Comment: 11 pages text (ps), 9 figures (ps), submitted to Semicon. Science Tech