Direct observation of ordered configurations of hydrogen adatoms on graphene

Ordered configurations of hydrogen adatoms on graphene have long been proposed, calculated and searched for. Here we report direct observation of several ordered configurations of H adatoms on graphene by scanning tunneling microscopy. On the top side of the graphene plane, H atoms in the configurations appear to stick to carbon atoms in the same sublattice. A gap larger than 0.6 eV in the local density of states of the configurations was revealed by scanning tunneling spectroscopy measurements. These findings can be well explained by density functional theory calculations based on double sided H configurations. In addition, factors that may influence H ordering are discussed

Quasi-1D graphene superlattices formed on high index surfaces

We report preparation of large area quasi-1D monolayer graphene superlattices on a prototypical high index surface Cu(410)-O and characterization by Raman spectroscopy, Auger electron spectroscopy (AES), low energy electron diffraction (LEED), scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS). The periodically stepped substrate gives a 1D modulation to graphene, forming a superlattice of the same super-periodicity. Consequently the moire pattern is also quasi-1D, with a different periodicity. Scanning tunneling spectroscopy measurements revealed new Dirac points formed at the superlattice Brillouin zone boundary as predicted by theories.Comment: 4 figure

Evolution of the Raman spectrum of graphene grown on copper upon oxidation of the substrate

Significant changes in the Raman spectrum of single-layer graphene grown on a copper film were observed after the spontaneous oxidation of the underlying substrate that occurred under ambient conditions. The frequencies of the graphene G and 2D Raman modes were found to undergo red shifts, while the intensities of the two bands change by more than an order of magnitude. To understand the origin of these effects, we further characterized the samples by scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), and atomic force microscopy (AFM). The oxidation of the substrate produced an appreciable corrugation in the substrate without disrupting the crystalline order of the graphene overlayer and/or changing the carrier doping level. We explain the red shifts of the Raman frequencies in terms of tensile strain induced by corrugation of the graphene layer. The changes in Raman intensity with oxidation arise from the influence of the thin cuprous oxide film on the efficiency of light coupling with the graphene layer in the Raman scattering process

A simple method to tune graphene growth between monolayer and bilayer

Selective growth of either monolayer or bilayer graphene is of great importance. We developed a method to readily tune large area graphene growth from complete monolayer to complete bilayer. In an ambient pressure chemical vapor deposition process, we used the sample temperature at which to start the H2 flow as the control parameter and realized the change from monolayer to bilayer growth of graphene on Cu foil. When the H2 starting temperature was above 700°C, continuous monolayer graphene films were obtained. When the H2 starting temperature was below 350°C, continuous bilayer films were obtained. Detailed characterization of the samples treated under various conditions revealed that heating without the H2 flow caused Cu oxidation. The more the Cu substrate oxidized, the less graphene bilayer could form