Wavelength-multiplexed duplex transceiver based on III-V/Si hybrid integration for off-chip and on-chip optical interconnects

A six-channel wavelength-division-multiplexed optical transceiver with a compact footprint of 1.5 x 0.65 mm(2) for off-chip and on-chip interconnects is demonstrated on a single silicon-on-insulator chip. An arrayed waveguide grating is used as the (de)multiplexer, and III-V electroabsorption sections fabricated by hybrid integration technology are used as both modulators and detectors, which also enable duplex links. The 30-Gb/s capacity for each of the six wavelength channels for the off-chip transceiver is demonstrated. For the on-chip interconnect, an electrical-to-electrical 3-dB bandwidth of 13 GHz and a data rate of 30 Gb/s per wavelength are achieved

Revealing microstructural evolutions, mechanical properties and wear performance of wire arc additive manufacturing homogeneous and heterogeneous NiTi alloy

Heterogeneous microstructure designs have attracted a great deal of attention, not only because they have the potential to achieve an ideal combination of two conflicting properties, but also because the processes involved in their fabrication are cost-effective and can be scaled up for industrial production. The process parameters in the preparation process have an important effect on the microstructure and properties of alloy members prepared by wire arc additive manufacturing (WAAM) technology. It was expected that the spatial heterogeneous microstructure with large microstructural heterogeneities in metals can be formed through changing the process parameters. In this work, homogeneous NiTi thin-walled component and heterogeneous NiTi thin-walled component were fabricated using WAAM technology by adjusting the heat input. The effects of deposition height and heat input on the microstructure, mechanical properties and wear properties of WAAM NiTi alloys were investigated. The results show that grains were gradually refined with the increase of deposition height in the homogeneous WAAM NiTi component. The ultimate tensile strength of homogeneous WAAM NiTi component increased from 606.87 MPa to 654.45 MPa and the elongation increased from 12.72% to 15.38%, as the increase of deposition height. Moreover, the homogeneous WAAM NiTi component exhibited excellent wear resistance, the coefficient of friction decreased from 0.760 to 0.715 with the increase of deposition height. Meanwhile, the grains in the heterogeneous WAAM NiTi component shows the finest grains in the central region. The ultimate tensile strength of the lower region, middle region and upper region of heterogeneous WAAM NiTi components were 556.12 MPa, 599.53 MPa and 739.79 MPa, and the elongations were 12.98%, 16.69%, 21.74%, respectively. The coefficient of friction for the lower region, middle region and upper region of heterogeneous WAAM NiTi components were 0.713, 0.720 and 0.710, respectively. The microhardness and cyclic compression properties of the homogeneous components with higher heat input were better than those of the heterogeneous components for the same deposition height. The tensile yield strength, elongation and wear resistance of the heterogeneous components were superior compared to the homogeneous components. These results can be used to optimize the WAAM process parameters to prepare NiTi components with excellent mechanical properties

Giant schwannoma of thoracic vertebra: A case report

BACKGROUND,It is relatively rare for schwannomas to invade bone, but it is very rare for a large,mass to form concurrently in the paravertebral region. Surgical resection is the,only effective treatment. Because of the extensive tumor involvement and the,many important surrounding structures, the tumor needs to be fully exposed.,Most of the tumors are completely removed by posterior combined open-heart,surgery to relieve spinal cord compression, restore the stability of the spine and,maximize the recovery of nerve and spinal cord function. The main objective of,this article is to present a schwannoma that had invaded the T5 and T6 vertebral,bodies and formed a large paravertebral mass with simultaneous invasion of the,spinal canal and compression of the spinal cord.,CASE SUMMARY,A 40-year-old female suffered from intermittent chest and back pain for 8 years.,Computed tomography and magnetic resonance imaging scans showed a,paravertebral tumor of approximately 86 mm × 109 mm × 116 mm, where the,adjacent T5 and T6 vertebral bodies were invaded by the tumor, the right intervertebral,foramen was enlarged, and the tumor had invaded the spinal canal to,compress the thoracic medulla. The preoperative puncture biopsy diagnosed a,benign schwannoma. Complete resection of the tumor was achieved by a two-step,operation. In the first step, the thoracic surgeon adopted a lateral approach to,separate the thoracic tumor from the lung. In the second step, a spine surgeon,performed a posterior midline approach to dissect the tumor from the vertebral,junction through removal of the tumor from the posterior side and further,resection of the entire T5 and T6 vertebral bodies. The large bone defect was,reconstructed with titanium mesh, and the posterior root arch was nail-fixed. Due,to the large amount of intraoperative bleeding, we performed tumor angioembolization,before surgery to reduce and avoid large intraoperative bleeding. The,postoperative diagnosis of benign schwannoma was confirmed by histochemical,examination. There was no sign of tumor recurrence or spinal instability during,the 2-year follow-up.,CONCLUSION,Giant schwannoma is uncommon. In this case, a complete surgical resection of a,giant thoracic nerve sheath tumor that invaded part of the vertebral body and,compressed the spinal cord was safe and effective

Interplay between topological insulators and superconductors

Topological insulators are insulating in the bulk but possess metallic surface states protected by time-reversal symmetry. Here, we report on a detailed electronic transport study in high-quality Bi 2Se 3 topological insulator thin films contacted by superconducting (In, Al, and W) electrodes. The resistance of the film shows an abrupt and significant upturn when the electrodes become superconducting. In turn, the Bi 2Se 3 film greatly weakens the superconductivity of the electrodes, significantly reducing both their transition temperatures and their critical fields. A possible interpretation of these results is that the superconducting electrodes are accessing the surface states and the experimental results are consequences of the interplay between the Cooper pairs of the electrodes and the spin-polarized current of the surface states in Bi 2Se 3. © 2012 American Physical Society.published_or_final_versio

Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators

Three-dimensional (3D) topological insulators (TI) are novel quantum materials with insulating bulk and topologically protected metallic surfaces with Dirac-like band structure. The spin-helical Dirac surface states are expected to host exotic topological quantum effects and find applications in spintronics and quantum computation. The experimental realization of these ideas requires fabrication of versatile devices based on bulk-insulating TIs with tunable surface states. The main challenge facing the current TI materials exemplified by Bi2Se3 and Bi2Te3 is the significant bulk conduction, which remains unsolved despite extensive efforts involving nanostructuring, chemical doping and electrical gating. Here we report a novel approach for engineering the band structure of TIs by molecular beam epitaxy (MBE) growth of (Bi1-xSbx)2Te3 ternary compounds. Angle-resolved photoemission spectroscopy (ARPES) and transport measurements show that the topological surface states exist over the entire composition range of (Bi1-xSbx)2Te3 (x = 0 to 1), indicating the robustness of bulk Z2 topology. Most remarkably, the systematic band engineering leads to ideal TIs with truly insulating bulk and tunable surface state across the Dirac point that behave like one quarter of graphene. This work demonstrates a new route to achieving intrinsic quantum transport of the topological surface states and designing conceptually new TI devices with well-established semiconductor technology.Comment: Minor changes in title, text and figures. Supplementary information adde

Formation of sp³ bonding in nanoindented carbon nanotubes and graphite

Author name used in this publication: C. H. Woo2004-2005 > Academic research: refereed > Publication in refereed journalVersion of RecordPublishe

Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films

We present a study of the structure and chemical composition of the Cr-doped 3D topological insulator Bi2Se3. Single-crystalline thin films were grown by molecular beam epitaxy on Al2O3 (0001), and their structural and chemical properties determined on an atomic level by aberration-corrected scanning transmission electron microscopy and electron energy loss spectroscopy. A regular quintuple layer stacking of the Bi2Se3 film is found, with the exception of the first several atomic layers in the initial growth. The spectroscopy data gives direct evidence that Cr is preferentially substituting for Bi in the Bi2Se3 host. We also show that Cr has a tendency to segregate at internal grain boundaries of the Bi2Se3 film

Observation of a ppb mass threshoud enhancement in \psi^\prime\to\pi^+\pi^-J/\psi(J/\psi\to\gamma p\bar{p}) decay

The decay channel $\psi^\prime\to\pi^+\pi^-J/\psi(J/\psi\to\gamma p\bar{p})$ is studied using a sample of $1.06\times 10^8$ $\psi^\prime$ events collected by the BESIII experiment at BEPCII. A strong enhancement at threshold is observed in the $p\bar{p}$ invariant mass spectrum. The enhancement can be fit with an $S$-wave Breit-Wigner resonance function with a resulting peak mass of $M=1861^{+6}_{-13} {\rm (stat)}^{+7}_{-26} {\rm (syst)} {\rm MeV/}c^2$ and a narrow width that is $\Gamma<38 {\rm MeV/}c^2$ at the 90% confidence level. These results are consistent with published BESII results. These mass and width values do not match with those of any known meson resonance.Comment: 5 pages, 3 figures, submitted to Chinese Physics

The bornavirus-derived human protein EBLN1 promotes efficient cell cycle transit, microtubule organisation and genome stability.

It was recently discovered that vertebrate genomes contain multiple endogenised nucleotide sequences derived from the non-retroviral RNA bornavirus. Strikingly, some of these elements have been evolutionary maintained as open reading frames in host genomes for over 40 million years, suggesting that some endogenised bornavirus-derived elements (EBL) might encode functional proteins. EBLN1 is one such element established through endogenisation of the bornavirus N gene (BDV N). Here, we functionally characterise human EBLN1 as a novel regulator of genome stability. Cells depleted of human EBLN1 accumulate DNA damage both under non-stressed conditions and following exogenously induced DNA damage. EBLN1-depleted cells also exhibit cell cycle abnormalities and defects in microtubule organisation as well as premature centrosome splitting, which we attribute in part, to improper localisation of the nuclear envelope protein TPR. Our data therefore reveal that human EBLN1 possesses important cellular functions within human cells, and suggest that other EBLs present within vertebrate genomes may also possess important cellular functions

Upregulation of miR-196b Confers a Poor Prognosis in Glioblastoma Patients via Inducing a Proliferative Phenotype

PURPOSE: To explore the expression pattern, prognostic value and functional role of miR-196b in glioblastoma (GBM) patients using large cohorts. EXPERIMENTAL DESIGN: MiR-196b expression was measured using the Human v2.0 miRNA Expression BeadChip (Illumina) in 198 frozen glioma tissues. The expression levels of miR-196b were also validated in an independent cohort containing 128 formalin-fixed paraffin-embedded (FFPE) glioma samples using qRT-PCR. The presence of other molecular prognostic indicators was assessed centrally in the glioma samples. Whole genome gene profiling was performed to investigate the underlying biological behavior. MiR-196b functional analyses were performed in U87 and U251 cell lines. RESULTS: The expression levels of miR-196b were inversely correlated with overall survival in GBM patients. Gene set enrichment analysis (GSEA) showed that the gene sets relating to cell cycle were significantly enriched in the cases with miR-196b overexpression. Functional analyses in U87 and U251 cells revealed that miR-196b was involved in cell proliferation. CONCLUSIONS: MiR-196b is overexpressed and confers a poor prognosis via promoting cellular proliferation in GBM patients