337 research outputs found
Low disordered, stable, and shallow germanium quantum wells: a playground for spin and hybrid quantum technology
Buried-channel semiconductor heterostructures are an archetype material
platform to fabricate gated semiconductor quantum devices. Sharp confinement
potential is obtained by positioning the channel near the surface, however
nearby surface states degrade the electrical properties of the starting
material. In this paper we demonstrate a two-dimensional hole gas of high
mobility ( cm/Vs) in a very shallow strained germanium
channel, which is located only 22 nm below the surface. This high mobility
leads to mean free paths , setting new benchmarks for holes in
shallow FET devices. Carriers are confined in an undoped Ge/SiGe
heterostructure with reduced background contamination, sharp interfaces, and
high uniformity. The top-gate of a dopant-less field effect transistor controls
the carrier density in the channel. The high mobility, along with a percolation
density of , light effective mass (0.09
m), and high g-factor (up to ) highlight the potential of undoped
Ge/SiGe as a low-disorder material platform for hybrid quantum technologies
Structural and optical quality of GaN grown on Sc2O3/Y2O3/Si(111)
Thick (∼900 nm) GaN layers were grown by molecular beam epitaxy on cost-effective Sc2O3/Y2O3/Si(111) substrates and characterized by x-ray diffraction and photoluminescence. Samples grown in Ga-rich condition show superior structural and optical quality with reduced density of cubic GaN inclusions within the hexagonal matrix and a relatively strong photoluminescence emission at 3.45 eV at 10 K. Cubic inclusions are formed in the initial growth stage and their concentration is reduced with increasing film thickness and after rapid thermal annealing
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Engineering the semiconductor/oxide interaction for stacking twin suppression in single crystalline epitaxial silicon(111)/insulator/Si(111) heterostructures
The integration of alternative semiconductor layers on the Si material platform via oxide heterostructures is of interest to increase the performance and/or functionality of future Si-based integrated circuits. The single crystalline quality of epitaxial (epi) semiconductor-insulator-Si heterostructures is however limited by too high defect densities, mainly due to a lack of knowledge about the fundamental physics of the heteroepitaxy mechanisms at work. To shed light on the physics of stacking twin formation as one of the major defect mechanisms in (111)-oriented fcc-related heterostructures on Si(111), we report a detailed experimental and theoretical study on the structure and defect properties of epi-Si(111)/Y2O 3/Pr2O3/Si(111) heterostructures. Synchrotron radiation-grazing incidence x-ray diffraction (SR-GIXRD) proves that the engineered Y2O3/Pr2O3 buffer dielectric heterostructure on Si(111) allows control of the stacking sequence of the overgrowing single crystalline epi-Si(111) layers. The epitaxy relationship of the epi-Si(111)/insulator/Si(111) heterostructure is characterized by a type A/B/A stacking configuration. Theoretical ab initio calculations show that this stacking sequence control of the heterostructure is mainly achieved by electrostatic interaction effects across the ionic oxide/covalent Si interface (IF). Transmission electron microscopy (TEM) studies detect only a small population of misaligned type B epi-Si(111) stacking twins whose location is limited to the oxide/epiSi IF region. Engineering the oxide/semiconductor IF physics by using tailored oxide systems opens thus a promising approach to grow heterostructures with well-controlled properties. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft
Domain matching epitaxy of ferrimagnetic CoFe2O4 thin films on Sc2O3/Si(111)
This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics.Ferrimagnetic spinel CoFe2O4 (CFO) films are integrated with Si(111) using Sc2O3 buffer layers. The huge lattice mismatch (17%) between CFO and Sc2O3 is accommodated by domain matching, and CFO grows epitaxially with (111) out-of-plane orientation and coexistence of A- and B-type in-plane crystal variants. CFO films have low roughness of 4 Å and saturation magnetization of about 300 emu/cm3. These properties make CFO films on Sc2O3-buffered Si(111) comparable to those grown on oxide single crystals and thus extend the possibilities of using spinel oxides in electronic devices
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Temperature dependence of strain–phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
We investigate the temperature dependence of the Ge Raman mode strain–phonon coefficient in Ge/Si heteroepitaxial layers. By analyzing the temperature-dependent evolution of both the Raman Ge-Ge line and of the Ge lattice strain, we obtain a linear dependence of the strain–phonon coefficient as a function of temperature. Our findings provide an efficient method for capturing the temperature-dependent strain relaxation mechanism in heteroepitaxial systems. Furthermore, we show that the rather large variability reported in the literature for the strain–phonon coefficient values might be due to the local heating of the sample due to the excitation laser used in µ-Raman experiments. © 2020 The Authors. Journal of Raman Spectroscopy published by John Wiley & Sons Lt
temperature dependence of strain phonon coefficient in epitaxial ge si 001 a comprehensive analysis
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Photoluminescence from ultrathin Ge-rich multi-quantum wells observed up to room-temperature: experiments and modeling
Employing a low-temperature growth-mode, we fabricated ultrathin Si1-xGex/Si multiple quantum well (QW) structures with a well thickness of less than 1.5 nm and a Ge concentration above 60 % directly on a Si substrate. We identified an unusual temperature-dependent blueshift of the photoluminescence (PL) and an exceptionally low thermal quenching. We find that this behavior is related to the relative intensities of the no-phonon (NP) peak and a phonon-assisted replica that are the main contributors to the total PL signal. In order to investigate these aspects in more detail, we developed a strategy to calculate the PL spectrum employing a self-consistent multi-valley effective mass model in combination with second-order perturbation theory. According to our investigation, we find that while the phonon-assisted feature decreases with temperature, the NP feature shows a strong increase in the recombination rate. Besides leading to the observed robustness against thermal quenching, this causes the observed blueshift of the total PL signal.T.W. and K.B. were supported by the Stiftung der Deutschen Wirtschaft (sdw) and by the
Deutsche Forschungsgemeinschaft (DFG) through project B10 within the Collaborative
Research Center (CRC) 951 Hybrid Inorganic/Organic Systems for Opto-Electronics. HRTEM
measurements were financed by Xunta de Galica Grant No. GRC2014/008
Optoelectronics with electrically tunable PN diodes in a monolayer dichalcogenide
One of the most fundamental devices for electronics and optoelectronics is
the PN junction, which provides the functional element of diodes, bipolar
transistors, photodetectors, LEDs, and solar cells, among many other devices.
In conventional PN junctions, the adjacent p- and n-type regions of a
semiconductor are formed by chemical doping. Materials with ambipolar
conductance, however, allow for PN junctions to be configured and modified by
electrostatic gating. This electrical control enables a single device to have
multiple functionalities. Here we report ambipolar monolayer WSe2 devices in
which two local gates are used to define a PN junction exclusively within the
sheet of WSe2. With these electrically tunable PN junctions, we demonstrate
both PN and NP diodes with ideality factors better than 2. Under excitation
with light, the diodes show photodetection responsivity of 210 mA/W and
photovoltaic power generation with a peak external quantum efficiency of 0.2%,
promising numbers for a nearly transparent monolayer sheet in a lateral device
geometry. Finally, we demonstrate a light-emitting diode based on monolayer
WSe2. These devices provide a fundamental building block for ubiquitous,
ultra-thin, flexible, and nearly transparent optoelectronic and electronic
applications based on ambipolar dichalcogenide materials.Comment: 14 pages, 4 figure
An air-stable DPP-thieno-TTF copolymer for single-material solar cell devices and field effect transistors
Following an approach developed in our group to incorporate tetrathiafulvalene (TTF) units into conjugated polymeric systems, we have studied a low band gap polymer incorporating TTF as a donor component. This polymer is based on a fused thieno-TTF unit that enables the direct incorporation of the TTF unit into the polymer, and a second comonomer based on the diketopyrrolopyrrole (DPP) molecule. These units represent a donor–acceptor copolymer system, p(DPP-TTF), showing strong absorption in the UV–visible region of the spectrum. An optimized p(DPP-TTF) polymer organic field effect transistor and a single material organic solar cell device showed excellent performance with a hole mobility of up to 5.3 × 10–2 cm2/(V s) and a power conversion efficiency (PCE) of 0.3%, respectively. Bulk heterojunction organic photovoltaic devices of p(DPP-TTF) blended with phenyl-C71-butyric acid methyl ester (PC71BM) exhibited a PCE of 1.8%
Spray-coatable ionogels based on silane-ionic liquids for low voltage, flexible, electrolyte-gated organic transistors
We introduce a new type of silane-based ionogels that are produced by gelation of the ionic liquid 3-methyl-1-(3-(triethoxysilyl)propyl)-imidazolium bis(trifluoromethylsulfonyl)imide ([(EtO)3SiPMIM][TFSI]) with tetramethylorthosilane and formic acid. In the obtained ionogels the cations are involved in the network formation while the anions can move freely. The ionogels show advantageous properties for application in flexible electronics, such as low modulus, solution processability and high specific capacitance. Spray-coated ionogels were used as high capacitance gate dielectrics for organic (poly[3-hexylthiophene], P3HT) electrolyte-gated transistors (EGTs) that operated at very low voltages (<2 V) with high on/off ratios in air over weeks. Devices fabricated on polymer foil remained functional during repeated bending cycles with strains up to 2.3%
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