Pyrite nanocrystals: shape-controlled synthesis and tunable optical properties via reversible self-assembly

Nanocrystals from non-toxic, earth abundant materials have recently received great interest for their potential large-scale application in photovoltaics and photocatalysis. Here, we report for the first time on the shape-controlled and scalable synthesis of phase-pure pyrite (FeS2) nanocrystals employing the simple, inexpensive, thermal reaction of iron–oleylamine complexes with sulfur in oleylamine. Either dendritic nanocrystals (nanodendrites) or nanocubes are obtained by adjusting the iron-oleylamine concentration and thereby controlling the nucleus concentration and kinetics of the nanocrystal growth. Pyrite nanodendrites are reversibly assembled by washing with toluene and redispersed by adding the ligand oleylamine. The assembly–redispersion-process is accompanied by an increased absorption in the red/near-infrared spectral region for the aggregated state. This increased low-energy absorption is due to interactions between the closed-packed nanocrystals. High-concentration nanodendrite dispersions are used to prepare pyrite thin films with strong broadband extinction in the visible and near-infrared. These films are attractive candidates for light harvesting in all inorganic solar cells based on earth abundant, non-toxic materials as well as for photocatalytic applications

Miniband-related 1.4–1.8 μm luminescence of Ge/Si quantum dot superlattices

The luminescence properties of highly strained, Sb-doped Ge/Si multi-layer heterostructures with incorporated Ge quantum dots (QDs) are studied. Calculations of the electronic band structure and luminescence measurements prove the existence of an electron miniband within the columns of the QDs. Miniband formation results in a conversion of the indirect to a quasi-direct excitons takes place. The optical transitions between electron states within the miniband and hole states within QDs are responsible for an intense luminescence in the 1.4–1.8 µm range, which is maintained up to room temperature. At 300 K, a light emitting diode based on such Ge/Si QD superlattices demonstrates an external quantum efficiency of 0.04% at a wavelength of 1.55 µm

STRUCTURAL, COMPOSITIONAL, AND OPTICAL PROPERTIES OF ULTRATHIN Si/Ge SUPERLATTICES

Strained-layer superlattices (SLS) composed of a sequence of ultrathin Si and Ge layers are grown on Ge(110) buffer layers by MBE. Crystalline quality, relaxation of asymmetrically SLS, and interdiffusion are studied in situ by LEED and AES. New optical transitions in the range of 0.7 to 0.8 eV are observed with photoluminescence experiments

Silicon/Germanium Strained-Layer Superlattices

High quality Si/Ge strained layer superlattices are achieved by low temperature molecular beam epitaxy on Si, SixGe1−x and Ge substrates. Various characterization techniques are used to obtain information on critical thickness, strain distribution, misfit dislocations, interface sharpness and superlattice periodicity. The band structure is strongly influenced by strain and zone folding effects. Two-dimensional electron systems can be realized in the wider gap Si layers due to the strain-induced lowering of the conduction band. New optical transitions in the infrared regime are observed with short period Si/Ge superlattices