Electron-phonon interaction effects in semiconductor quantum dots: a non-perturbative approach

Multiphonon processes in a model quantum dot (QD) containing two electronic states and several optical phonon modes are considered by taking into account both intra- and nterlevel terms. The Hamiltonian is exactly diagonalized, including a finite number of multiphonon processes large enough to guarantee that the result can be considered exact in the physically important energy region. The physical properties are studied by calculating the electronic Green’s function and the QD dielectric function. When both the intra- and interlevel interactions are included, the calculated spectra allow several previously published experimental results obtained for spherical and self-assembled QD’s, such as enhanced two-LO-phonon replica in absorption spectra and up-converted photoluminescence to be explained. An explicit calculation of the spectral line shape due to intralevel interaction with a continuum of acoustic phonons is presented, where the multiphonon processes also are shown to be important. It is pointed out that such an interaction, under certain conditions, can lead to relaxation in the otherwise stationary polaron system.Fundação para a Ciência e a Tecnologia (FCT

Vibrational properties of single-wall nanotubes and monolayers of hexagonal BN

We report a detailed study of the vibrational properties of BN single-walled nanotubes and of the BN monolayer. Our results have been obtained from a well-established Tight-Binding model complemented with an electrostatic model to account for the long-range interactions arising from the polar nature of the material, and which are not included in the Tight-Binding model. Our study provides a wealth of data for the BN monolayer and nanotubes, such as phonon band structure, vibrational density of states, elastic constants, etc. For the nanotubes we obtain the behavior of the optically active modes as a function of the structural parameters, and we compare their frequencies with those derived from a zone-folding treatment applied to the phonon frequencies of the BN monolayer, finding general good agreement between the two.Comment: 14 pages with 10 postscript figures, to appear in PRB, January 15th 200

Integrated Circuits Based on Bilayer MoS

Two-dimensional (2D) materials, such as molybdenum disulfide (MoS2), have been shown to exhibit excellent electrical and optical properties. The semiconducting nature of MoS2 allows it to overcome the shortcomings of zero-bandgap graphene, while still sharing many of graphene’s advantages for electronic and optoelectronic applications. Discrete electronic and optoelectronic components, such as field-effect transistors, sensors, and photodetectors made from few-layer MoS2 show promising performance as potential substitute of Si in conventional electronics and of organic and amorphous Si semiconductors in ubiquitous systems and display applications. An important next step is the fabrication of fully integrated multistage circuits and logic building blocks on MoS2 to demonstrate its capability for complex digital logic and high-frequency ac applications. This paper demonstrates an inverter, a NAND gate, a static random access memory, and a five-stage ring oscillator based on a direct-coupled transistor logic technology. The circuits comprise between 2 to 12 transistors seamlessly integrated side-by-side on a single sheet of bilayer MoS2. Both enhancement-mode and depletion-mode transistors were fabricated thanks to the use of gate metals with different work functions.United States. Office of Naval Research (Young Investigator Program)Microelectronics Advanced Research Corporation (MARCO) (Focus Center for Materials, Structure and Device (MARCO MSD))National Science Foundation (U.S.) (NSF DMR 0845358)United States. Army Research Offic

Decoration of WS₂ Nanotubes and Fullerene-Like MoS₂ with Gold Nanoparticles

A new technique of gold nanoparticle (AuNP) growth on the sidewalls of WS₂ inorganic nanotubes (INT-WS₂) and the surface of MoS₂ fullerene-like nanoparticles (IF-MoS₂) is developed to produce metal–semiconductor nanocomposites. The coverage density and mean size of the nanoparticles are dependent on the HAuCl₄/MS₂ (M = W, Mo) molar ratio. AuNPs formation mechanism seems to involve spatially divided reactions of AuCl₄^– reduction and WS₂/MoS₂ oxidation taking place on the surface defects of the disulfide nanostructures rather than directly at the AuNP-INT/IF interface. A strong epitaxial matching between the lattices of the gold nanoparticles and the INT-WS₂ or IF-MoS₂ seems to suppress plasmon resonance in the nanocomposites with small (<10 nm mean size) AuNPs