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Polarization-induced Rashba spin-orbit coupling in structurally symmetric III-Nitride quantum wells
The effective linear coupling coefficient and the total spin-splitting are
calculated in Ga- and N- face InGaN quantum wells. Alloy content, geometry, and
gate voltage affect an internal field and an electron density distribution in
the growth direction that has direct effect on a spin-splitting. The sign of
structural inversion asymmetry (SIA) spin-orbit coupling coefficient depends on
an internal electric field in the well that results in different signs for
Ga-face and N-face III-Nitride structures. The effective linear coupling
coefficient is always positive because of the Dresselhaus-type contribution
that is a major one in quantum wells under consideration. The magnitude of the
spin-splitting is comparable with that experimentally observed in III-Nitrides
and III-V zinc-blende structures.Comment: 17 pages, 8 figure
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