Low-operating-voltage polymer thin-film transistors based on poly(3-hexylthiophene) with hafnium oxide as the gate dielectric

The effects of hafnium oxide $(hbox{HfO}-{2})$ gate dielectric annealing treatment in oxygen $(hbox{O}-{2})$ and ammonia $(hbox{NH}-{3})$ ambient on the electrical performance of polymer thin-film transistors (PTFTs) based on poly(3-hexylthiophene) are investigated. The PTFTs with $hbox{HfO}-{2}$ gate dielectric and also octadecyltrichlorosilane surface modification, prepared by spin-coating process, exhibit good performance, such as a small threshold voltage of $-$0.5 V and an operating voltage as low as $-$4 V. Results indicate that the PTFT with $hbox{NH}-{3}$-annealed $hbox{HfO}-{2}$ shows higher carrier mobility, larger on/off current ratio, smaller subthreshold swing, and lower threshold voltage than the PTFT with $hbox{O}-{2}$-annealed $hbox{HfO}-{2}$. Capacitancevoltage analysis for metal-polymer-oxide-silicon structures indicates that the better electrical performance of the PTFT with $hbox{NH}-{3}$ -annealed $hbox{HfO}-{2}$ is attributed to improved dielectric/polymer interface and reduced series resistance in the transistor. © 2006 IEEE.published_or_final_versio

Bias-stress-induced instability of polymer thin-film transistor based on poly(3-hexylthiophene)

A polymer thin-film transistor (PTFT) based on poly(3-hexylthiophene) (P3HT) is fabricated by a spin-coating process and characterized. Its bias-stress-induced instability during operation is investigated as a function of time and temperature. For negative gate-bias stress, the carrier mobility remains unchanged, the off-state current decreases, and the threshold voltage shifts toward the negative direction. On the other hand, for negative drain-bias stress, the carrier mobility decreases slightly, the off-state current increases, and the threshold voltage shifts toward the positive direction. The threshold shifts under gate- and drain-bias stresses are observed to be logarithmically dependent on time, and the decay rate of the threshold-voltage shift is independent of temperature. The results suggest that the origin of the threshold-voltage shift upon negative gate-bias stress is predominantly associated with holes trapped within the SiO 2 gate dielectric or at the P3HT/SiO 2 interface, while time-dependent charge trapping in the deep trap states and creation of defect states in the channel region are responsible for the drain-bias stress effect on the PTFT. © 2011 IEEE.published_or_final_versio

Simple Metals at High Pressure

In this lecture we review high-pressure phase transition sequences exhibited by simple elements, looking at the examples of the main group I, II, IV, V, and VI elements. General trends are established by analyzing the changes in coordination number on compression. Experimentally found phase transitions and crystal structures are discussed with a brief description of the present theoretical picture.Comment: 22 pages, 4 figures, lecture notes for the lecture given at the Erice course on High-Pressure Crystallography in June 2009, Sicily, Ital

Investigations on DNA damage and frequency of micronuclei in occupational exposure to electromagnetic fields (EMFs) emitted from video display terminals (VDTs)

The potential effect of electromagnetic fields (EMFs) emitted from video display terminals (VDTs) to elicit biological response is a major concern for the public. The software professionals are subjected to cumulative EMFs in their occupational environments. This study was undertaken to evaluate DNA damage and incidences of micronuclei in such professionals. To the best of our knowledge, the present study is the first attempt to carry out cytogenetic investigations on assessing bioeffects in personal computer users. The study subjects (n = 138) included software professionals using VDTs for more than 2 years with age, gender, socioeconomic status matched controls (n = 151). DNA damage and frequency of micronuclei were evaluated using alkaline comet assay and cytochalasin blocked micronucleus assay respectively. Overall DNA damage and incidence of micronuclei showed no significant differences between the exposed and control subjects. With exposure characteristics, such as total duration (years) and frequency of use (minutes/day) sub-groups were assessed for such parameters. Although cumulative frequency of use showed no significant changes in the DNA integrity of the classified sub-groups, the long-term users (> 10 years) showed higher induction of DNA damage and increased frequency of micronuclei and micro nucleated cells

Serum amyloid A primes microglia for ATP-dependent interleukin-1\u3b2 release

Acute-phase response is a systemic reaction to environmental/inflammatory insults and involves production of acute-phase proteins, including serum amyloid A (SAA). Interleukin-1\u3b2 (IL-1\u3b2), a master regulator of neuroinflammation produced by activated inflammatory cells of the myeloid lineage, in particular microglia, plays a key role in the pathogenesis of acute and chronic diseases of the peripheral nervous system and CNS. IL-1\u3b2 release is promoted by ATP acting at the purinergic P2X7 receptor (P2X7R) in cells primed with toll-like receptor (TLR) ligands

Genomic imbalances in esophageal squamous cell carcinoma identified by molecular cytogenetic techniques

This review summarizes the chromosomal changes detected by molecular cytogenetic approaches in esophageal squamous cell carcinoma (ESCC), the ninth most common malignancy in the world. Whole genome analyses of ESCC cell lines and tumors indicated that the most frequent genomic gains occurred at 1, 2q, 3q, 5p, 6p, 7, 8q, 9q, 11q, 12p, 14q, 15q, 16, 17, 18p, 19q, 20q, 22q and X, with focal amplifications at 1q32, 2p16-22, 3q25-28, 5p13-15.3, 7p12-22, 7q21-22, 8q23-24.2, 9q34, 10q21, 11p11.2, 11q13, 13q32, 14q13-14, 14q21, 14q31-32, 15q22-26, 17p11.2, 18p11.2-11.3 and 20p11.2. Recurrent losses involved 3p, 4, 5q, 6q, 7q, 8p, 9, 10p, 12p, 13, 14p, 15p, 18, 19p, 20, 22, Xp and Y. Gains at 5p and 7q, and deletions at 4p, 9p, and 11q were significant prognostic factors for patients with ESCC. Gains at 6p and 20p, and losses at 10p and 10q were the most significant imbalances, both in primary carcinoma and in metastases, which suggested that these regions may harbor oncogenes and tumor suppressor genes. Gains at 12p and losses at 3p may be associated with poor relapse-free survival. The clinical applicability of these changes as markers for the diagnosis and prognosis of ESCC, or as molecular targets for personalized therapy should be evaluated

Stretchable Dual-Capacitor Multi-Sensor for Touch-Curvature-Pressure-Strain Sensing

We introduce a new type of multi-functional capacitive sensor that can sense several different external stimuli. It is fabricated only with polydimethylsiloxane (PDMS) films and silver nanowire electrodes by using selective oxygen plasma treatment method without photolithography and etching processes. Differently from the conventional single-capacitor multi-functional sensors, our new multifunctional sensor is composed of two vertically-stacked capacitors (dual-capacitor). The unique dual-capacitor structure can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction, and it can also detect the surface-normal directionality of curvature, pressure, and touch. Meanwhile, the conventional single-capacitor sensor has ambiguity in distinguishing curvature and pressure and it can detect only the strength of external stimulus. The type, directionality, and strength of external stimulus can be determined based on the relative capacitance changes of the two stacked capacitors. Additionally, the logical flow reflected on a tree structure with its branches reaching the direction and strength of the corresponding external stimulus unambiguously is devised. This logical flow can be readily implemented in the sensor driving circuit if the dual-capacitor sensor is commercialized actually in the future

A Jurisprudential Analysis of Government Intervention and Prenatal Drug Abuse

This article takes a different approach in considering the problem of prenatal drug abuse. After briefly discussing government intervention and constitutional issues, this article will consider the concept of duty and correlative rights. This discussion of duty and correlative rights suggests that the government can take measures to curb prenatal drug use without recognizing fetal rights. The article concludes with a discussion of the utility of criminal legislation as compared to public health legislation that treats drug addiction as a disease requiring treatment. As formulated, the proposal for public health legislation is not based on any concept of fetal rights. Instead, it is based on the recognition of societal interests, as well as the woman’s needs