Fluctuations, Saturation, and Diffractive Excitation in High Energy Collisions

Diffractive excitation is usually described by the Good--Walker formalism for low masses, and by the triple-Regge formalism for high masses. In the Good--Walker formalism the cross section is determined by the fluctuations in the interaction. In this paper we show that by taking the fluctuations in the BFKL ladder into account, it is possible to describe both low and high mass excitation by the Good--Walker mechanism. In high energy $pp$ collisions the fluctuations are strongly suppressed by saturation, which implies that pomeron exchange does not factorise between DIS and $pp$ collisions. The Dipole Cascade Model reproduces the expected triple-Regge form for the bare pomeron, and the triple-pomeron coupling is estimated.Comment: 20 pages, 12 figure

van der Waals Bonded Co/h-BN Contacts to Ultrathin Black Phosphorus Devices

Due to the chemical inertness of 2D hexagonal-Boron Nitride (h-BN), few atomic-layer h-BN is often used to encapsulate air-sensitive 2D crystals such as Black Phosphorus (BP). However, the effects of h-BN on Schottky barrier height, doping and contact resistance are not well known. Here, we investigate these effects by fabricating h-BN encapsulated BP transistors with cobalt (Co) contacts. In sharp contrast to directly Co contacted p-type BP devices, we observe strong n-type conduction upon insertion of the h-BN at the Co/BP interface. First principles calculations show that this difference arises from the much larger interface dipole at the Co/h-BN interface compared to the Co/BP interface, which reduces the work function of the Co/h-BN contact. The Co/h-BN contacts exhibit low contact resistances (~ 4.5 k-ohm), and are Schottky barrier free. This allows us to probe high electron mobilities (4,200 cm2/Vs) and observe insulator-metal transitions even under two-terminal measurement geometry

Soft gluons away from jets: distribution and correlation

Recently, an exact conformal mapping between soft gluons emitted from jets at large angle in e+e- annihilation and those in the BFKL evolution of a high energy hadron has been proposed. We elucidate some remarkable aspects of this correspondence and use them to analytically compute the distribution and correlation of gluons in the interjet region. We also establish the timelike counterpart of Mueller's dipole model and discuss the resulting linear and nonlinear evolution equations.Comment: 25 pages, v2: minor corrections, to be published in jhe

Gate-tunable black phosphorus spin valve with nanosecond spin lifetimes

Two-dimensional materials offer new opportunities for both fundamental science and technological applications, by exploiting the electron spin. While graphene is very promising for spin communication due to its extraordinary electron mobility, the lack of a band gap restricts its prospects for semiconducting spin devices such as spin diodes and bipolar spin transistors. The recent emergence of 2D semiconductors could help overcome this basic challenge. In this letter we report the first important step towards making 2D semiconductor spin devices. We have fabricated a spin valve based on ultra-thin (5 nm) semiconducting black phosphorus (bP), and established fundamental spin properties of this spin channel material which supports all electrical spin injection, transport, precession and detection up to room temperature (RT). Inserting a few layers of boron nitride between the ferromagnetic electrodes and bP alleviates the notorious conductivity mismatch problem and allows efficient electrical spin injection into an n-type bP. In the non-local spin valve geometry we measure Hanle spin precession and observe spin relaxation times as high as 4 ns, with spin relaxation lengths exceeding 6 um. Our experimental results are in a very good agreement with first-principles calculations and demonstrate that Elliott-Yafet spin relaxation mechanism is dominant. We also demonstrate that spin transport in ultra-thin bP depends strongly on the charge carrier concentration, and can be manipulated by the electric field effect

Electronic Spin Transport in Dual-Gated Bilayer Graphene

The elimination of extrinsic sources of spin relaxation is key in realizing the exceptional intrinsic spin transport performance of graphene. Towards this, we study charge and spin transport in bilayer graphene-based spin valve devices fabricated in a new device architecture which allows us to make a comparative study by separately investigating the roles of substrate and polymer residues on spin relaxation. First, the comparison between spin valves fabricated on SiO2 and BN substrates suggests that substrate-related charged impurities, phonons and roughness do not limit the spin transport in current devices. Next, the observation of a 5-fold enhancement in spin relaxation time in the encapsulated device highlights the significance of polymer residues on spin relaxation. We observe a spin relaxation length of ~ 10 um in the encapsulated bilayer with a charge mobility of 24000 cm2/Vs. The carrier density dependence of spin relaxation time has two distinct regimes; n<4 x 1012 cm-2, where spin relaxation time decreases monotonically as carrier concentration increases, and n>4 x 1012 cm-2, where spin relaxation time exhibits a sudden increase. The sudden increase in the spin relaxation time with no corresponding signature in the charge transport suggests the presence of a magnetic resonance close to the charge neutrality point. We also demonstrate, for the first time, spin transport across bipolar p-n junctions in our dual-gated device architecture that fully integrates a sequence of encapsulated regions in its design. At low temperatures, strong suppression of the spin signal was observed while a transport gap was induced, which is interpreted as a novel manifestation of impedance mismatch within the spin channel

Spin Relaxation in Single Layer Graphene with Tunable Mobility

Graphene is an attractive material for spintronics due to theoretical predictions of long spin lifetimes arising from low spin-orbit and hyperfine couplings. In experiments, however, spin lifetimes in single layer graphene (SLG) measured via Hanle effects are much shorter than expected theoretically. Thus, the origin of spin relaxation in SLG is a major issue for graphene spintronics. Despite extensive theoretical and experimental work addressing this question, there is still little clarity on the microscopic origin of spin relaxation. By using organic ligand-bound nanoparticles as charge reservoirs to tune mobility between 2700 and 12000 cm2/Vs, we successfully isolate the effect of charged impurity scattering on spin relaxation in SLG. Our results demonstrate that while charged impurities can greatly affect mobility, the spin lifetimes are not affected by charged impurity scattering.Comment: 13 pages, 5 figure

Correlation of small-x gluons in impact parameter space

In the framework of the QCD dipole model at high energy, we present an analytic evaluation of the dipole pair density in two limits in which the parent dipole is much larger/smaller than the distance between the two child dipoles. Due to conformal symmetry, the two limits give an identical result. The power-law correlation between dipoles explicitly breaks the factorization of target-averaged scattering amplitudes.Comment: 15 pages, 3 figures; some comments and references added, accepted by Nucl. Phys.

Odderon in baryon-baryon scattering from the AdS/CFT correspondence

Based on the AdS/CFT correspondence, we present a holographic description of various C-odd exchanges in high energy baryon-baryon and baryon-antibaryon scattering, and calculate their respective contributions to the difference in the total cross sections. We predict that, due to the warp factor of AdS_5, the total cross section in pp collisions is larger than in p\bar{p} collisions at asymptotically high energies.Comment: 23 pages, v2: minor changes, to be published in JHE

Strongly anisotropic spin relaxation in graphene/transition metal dichalcogenide heterostructures at room temperature

Graphene has emerged as the foremost material for future two-dimensional spintronics due to its tuneable electronic properties. In graphene, spin information can be transported over long distances and, in principle, be manipulated by using magnetic correlations or large spin-orbit coupling (SOC) induced by proximity effects. In particular, a dramatic SOC enhancement has been predicted when interfacing graphene with a semiconducting transition metal dechalcogenide, such as tungsten disulphide (WS$_2$). Signatures of such an enhancement have recently been reported but the nature of the spin relaxation in these systems remains unknown. Here, we unambiguously demonstrate anisotropic spin dynamics in bilayer heterostructures comprising graphene and WS$_2$. By using out-of-plane spin precession, we show that the spin lifetime is largest when the spins point out of the graphene plane. Moreover, we observe that the spin lifetime varies over one order of magnitude depending on the spin orientation, indicating that the strong spin-valley coupling in WS$_2$ is imprinted in the bilayer and felt by the propagating spins. These findings provide a rich platform to explore coupled spin-valley phenomena and offer novel spin manipulation strategies based on spin relaxation anisotropy in two-dimensional materials

Holographic current correlators at finite coupling and scattering off a supersymmetric plasma

By studying the effect of the order(\alpha'^3) string theory corrections to type IIB supergravity, including those corrections involving the Ramond-Ramond five-form field strength, we obtain the corrected equations of motion of an Abelian perturbation of the AdS_5-Schwarzschild black hole. We then use the gauge theory/string theory duality to examine the coupling-constant dependence of vector current correlators associated to a gauged U(1) sub-group of the global R-symmetry group of strongly-coupled N=4 supersymmetric Yang-Mills theory at finite temperature. The corrections induce a set of higher-derivative operators for the U(1) gauge field, but their effect is highly suppressed. We thus find that the order(\alpha'^3) corrections affect the vector correlators only indirectly, through the corrected metric. We apply our results to investigate scattering off a supersymmetric Yang-Mills plasma at low and high energy. In the latter regime, where Deep Inelastic Scattering is expected to occur, we find an enhancement of the plasma structure functions in comparison with the infinite 't Hooft coupling result.Comment: 38 pages, 6 figures, minor clarifications added, typos corrected, references adde