Variable metric proximal stochastic variance reduced gradient methods for nonconvex nonsmooth optimization

We study the problem of minimizing the sum of two functions. The first function is the average of a large number of nonconvex component functions and the second function is a convex (possibly nonsmooth) function that admits a simple proximal mapping. With a diagonal Barzilai-Borwein stepsize for updating the metric, we propose a variable metric proximal stochastic variance reduced gradient method in the mini-batch setting, named VM-SVRG. It is proved that VM-SVRG converges sublinearly to a stationary point in expectation. We further suggest a variant of VM-SVRG to achieve linear convergence rate in expectation for nonconvex problems satisfying the proximal Polyak-Lojasiewicz inequality. The complexity of VM-SVRG is lower than that of the proximal gradient method and proximal stochastic gradient method, and is the same as the proximal stochastic variance reduced gradient method. Numerical experiments are conducted on standard data sets. Comparisons with other advanced proximal stochastic gradient methods show the efficiency of the proposed method

A simulated investigation on the machining instability and dynamic surface generation

In this paper, the authors propose the generic concept of machining instability based on the analysis of all kinds of machining instable behaviors and their features. The investigation covers all aspects of the machining process, including the machine tool structural response, cutting process variables, tooling geometry and workpiece material property in a full dynamic scenario. The paper presents a novel approach for coping with the sophisticated machining instability and enabling better understanding of its effect on the surface generation through a combination of the numerical method with the characteristic equations and using block diagrams/functions to represent implicit equations and nonlinear factors. It therefore avoids the lengthy algebraic manipulations in deriving the outcome and the solution scheme is thus simple, robust and intuitive. Several machining case studies and their simulation results demonstrate the proposed approach is feasible for shop floor CNC machining optimisation in particular. The results also indicate the proposed approach is useful to monitor the machining instability and surface topography and to be potentially applied in adaptive control of the instability in real time

The short-time behaviour of a kinetic Ashkin-Teller model on the critical line

We simulate the kinetic Ashkin-Teller model with both ordered and disordered initial states, evolving in contact with a heat-bath at the critical temperature. The power law scaling behaviour for the magnetic order and electric order are observed in the early time stage. The values of the critical exponent $\theta$ vary along the critical line. Another dynamical exponent $z$ is also obtained in the process.Comment: 14 pages LaTeX with 4 figures in postscrip

Top-illuminated dye-sensitized solar cells with a room-temperature- processed ZnO photoanode on metal substrates and a Pt-coated Ga-doped ZnO counter electrode

We report on top-illuminated, fluorine tin oxide/indium tin oxide-free (FTO/ITO-free), dye-sensitized solar cells (DSCs) using room-temperature- processed ZnO layers on metal substrates as the working electrodes and Pt-coated Ga-doped ZnO layers (GZO) as the counter electrodes. These top-illuminated DSCs with GZO render comparable efficiency to those employing commercial FTO counter electrodes. Despite a lower current density, the top-illuminated DSCs result in a higher fill factor than conventional DSCs due to a low ohmic loss at the electrode/semiconductor interface. The effect of metal substrate on the performance of the resulting top-illuminated DSCs is also studied by employing various metals with different work functions. Ti is shown to be a suitable metal to be used as the working electrode in the top-illuminated device architecture owing to its low ohmic loss at the electrode/semiconductor interface, minimum catalytic activity on redox reactions and high resistance to corrosion by liquid electrolytes. © 2011 IOP Publishing Ltd

An efficient non-Lambertian organic light-emitting diode using imprinted submicron-size zinc oxide pillar arrays

We report phosphorescent organic light-emitting diodes with a substantially improved light outcoupling efficiency and a wider angular distribution through applying a layer of zinc oxide periodic nanopillar arrays by pattern replication in non-wetting templates technique. The devices exhibited the peak emission intensity at an emission angle of 40° compared to 0° for reference device using bare ITO-glass. The best device showed a peak luminance efficiency of 95.5 ± 1.5 cd/A at 0° emission (external quantum efficiency - EQE of 38.5 ± 0.1%, power efficiency of 127 ± 1 lm/W), compared to that of the reference device, which has a peak luminance efficiency of 68.0 ± 1.4 cd/A (EQE of 22.0 ± 0.1%, power efficiency of 72 ± 1 lm/W). © 2013 American Institute of Physics

A PN-type quantum barrier for InGaN/GaN light emitting diodes

In this work, InGaN/GaN light-emitting diodes (LEDs) with PN-type quantum barriers are comparatively studied both theoretically and experimentally. A strong enhancement in the optical output power is obtained from the proposed device. The improved performance is attributed to the screening of the quantum confined Stark effect (QCSE) in the quantum wells and improved hole transport across the active region. In addition, the enhanced overall radiative recombination rates in the multiple quantum wells and increased effective energy barrier height in the conduction band has substantially suppressed the electron leakage from the active region. Furthermore, the electrical conductivity in the proposed devices is improved. The numerical and experimental results are in excellent agreement and indicate that the PN-type quantum barriers hold great promise for high-performance InGaN/GaN LEDs. © 2013 Optical Society of America

Phylogenetic reassessment of the Chaetomium globosum species complex

Chaetomium globosum, the type species of the genus, is ubiquitous, occurring on a wide variety of substrates, in air and in marine environments. This species is recognised as a cellulolytic and/or endophytic fungus. It is also known as a source of secondary metabolites with various biological activities, having great potential in the agricultural, medicinal and industrial fields. On the negative side, C. globosum has been reported as an air contaminant causing adverse health effects and as causal agent of human fungal infections. However, the taxonomic status of C. globosum is still poorly understood. The contemporary species concept for this fungus includes a broadly defined morphological diversity as well as a large number of synonymies with limited phylogenetic evidence. The aim of this study is, therefore, to resolve the phylogenetic limits of C. globosum s.str. and related species. Screening of isolates in the collections of the CBS-KNAW Fungal Biodiversity Centre (The Netherlands) and the China General Microbiological Culture Collection Centre (China) resulted in recognising 80 representative isolates of the C. globosum species complex. Thirty-six species are identified based on phylogenetic inference of six loci, supported by typical morphological characters, mainly ascospore shape. Of these, 12 species are newly described here. Additionally, C. cruentum, C. mollipilium, C. rectum, C. subterraneum and two varieties of C. globosum are synonymised under C. globosum s.str., and six species are resurrected, i.e. C. angustispirale, C. coarctatum, C. cochliodes, C. olivaceum, C. spiculipilium and C. subglobosum. Chaetomium ascotrichoides is segregated from C. madrasense and the genus name Chaetomidium is rejected. Five species, including C. globosum s.str., are typified here to stabilise their taxonomic status. A further evaluation of the six loci used in this study as potential barcodes indicated that the 28S large subunit (LSU) nrDNA and the internal transcribed spacer regions and intervening 5.8S nrRNA (ITS) gene regions were unreliable to resolve species, whereas β-tubulin (tub2) and RNA polymerase II second largest subunit (rpb2) showed the greatest promise as DNA barcodes for differentiating Chaetomium species. This study provides a starting point to establish a more robust classification system for Chaetomium and for the Chaetomiaceae.The National Natural Science Foundation of China (Project No. 30570007) and the Ministry of Science and Technology of P.R. China (No. 2006FY120100).http://www.ingentaconnect.com/content/nhn/pimjhttp://www.persoonia.orgam2017Forestry and Agricultural Biotechnology Institute (FABI)Microbiology and Plant Patholog

A hole modulator for InGaN/GaN light-emitting diodes

The low p-type doping efficiency of the p-GaN layer has severely limited the performance of InGaN/GaN light-emitting diodes (LEDs) due to the ineffective hole injection into the InGaN/GaN multiple quantum well (MQW) active region. The essence of improving the hole injection efficiency is to increase the hole concentration in the p-GaN layer. Therefore, in this work, we have proposed a hole modulator and studied it both theoretically and experimentally. In the hole modulator, the holes in a remote p-type doped layer are depleted by the built-in electric field and stored in the p-GaN layer. By this means, the overall hole concentration in the p-GaN layer can be enhanced. Furthermore, the hole modulator is adopted in the InGaN/GaN LEDs, which reduces the effective valance band barrier height for the p-type electron blocking layer from ∼332meV to ∼294 meV at 80 A/cm2 and demonstrates an improved optical performance, thanks to the increased hole concentration in the p-GaN layer and thus the improved hole injection into the MQWs. © 2015 AIP Publishing LLC

Partial wave analysis of J/\psi \to \gamma \phi \phi

Using $5.8 \times 10^7 J/\psi$ events collected in the BESII detector, the radiative decay $J/\psi \to \gamma \phi \phi \to \gamma K^+ K^- K^0_S K^0_L$ is studied. The $\phi\phi$ invariant mass distribution exhibits a near-threshold enhancement that peaks around 2.24 GeV/$c^{2}$. A partial wave analysis shows that the structure is dominated by a $0^{-+}$ state ($\eta(2225)$) with a mass of $2.24^{+0.03}_{-0.02}{}^{+0.03}_{-0.02}$ GeV/$c^{2}$ and a width of $0.19 \pm 0.03^{+0.06}_{-0.04}$ GeV/$c^{2}$. The product branching fraction is: $Br(J/\psi \to \gamma \eta(2225))\cdot Br(\eta(2225)\to \phi\phi) = (4.4 \pm 0.4 \pm 0.8)\times 10^{-4}$.Comment: 11 pages, 4 figures. corrected proof for journa