High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots

We compare the quality factor values of the whispery gallery modes of microdisks incorporating GaN quantum dots (QDs) grown on AlN and AlGaN barriers by performing room temperature photoluminescence (PL) spectroscopy. The PL measurements show a large number of high Q factor (Q) resonant modes on the whole spectrum which allows us to identify the different radial mode families and to compare them with simulations. We report a considerable improvement of the Q factor which reflect the etching quality and the relatively low cavity loss by inserting QDs into the cavity. GaN/AlN QDs based microdisks show very high Q values (Q > 7000) whereas the Q factor is only up to 2000 in microdisks embedding QDs grown on AlGaN barrier layer. We attribute this difference to the lower absorption below bandgap for AlN barrier layers at the energies of our experimental investigation

Solving thermal issues in tensile-strained Ge microdisks

International audienceWe propose to use a Ge-dielectric-metal stacking to allow one to address both thermal management with the metal as an efficient heat sink and tensile strain engineering with the buried dielectric as a stressor layer. This scheme is particularly useful for the development of Ge-based optical sources. We demonstrate experimentally the relevance of this approach by comparing the optical response of tensile-strained Ge microdisks with an Al heat sink or an oxide pedestal. Photoluminescence indicates a much reduced temperature rise in the microdisk (16 K with Al pedestal against 200 K with SiO 2 pedestal under a 9 mW continuous wave optical pumping). An excellent agreement is found with finite element modeling of the temperature rise. This original stacking combining metal and dielectrics is promising for integrated photonics where thermal management is an issue

Ultra-Low Threshold cw Lasing in Tensile Strained GeSn Microdisk Cavities

GeSn is proven as a good candidate to achieve CMOS-compatible laser sources on silicon. Lasing demonstrations in this alloy were based on directness of the band structure, this directness being increased with increasing the Sn content above 8 at.%. These past few years the research were consequently focused on incorporating the highest Sn content as possible to achieve high directness and high temperature laser operation. This unfortunately results is increased threshold. In this contribution we discuss the advantages in combining tensile strain engineering with lower Sn content alloys. This approach is motivated by the higher material quality in lower Sn content. The case with Sn content as small as 5.4 at.% Sn will be discussed. The alloy is initially compressively strained, and exhibits an indirect band gap that is turned to direct by applying tensile strain. A specific technology based on transfer On Insulator stressor layer on metal was developed to address strain engineering, thermal cooling and defective interface with the Ge-VS. This led to lasing in Ge0.95Sn0.05 microdisk cavities with dramatically reduced thresholds, by two order of magnitude, as compared to the case with high Sn alloys and as consequence enables cw operation

Ultra-low-threshold continuous-wave and pulsed lasing in tensile-strained GeSn alloys

Strained GeSn alloys are promising for realizing light emitters based entirely on group IV elements. Here, we report GeSn microdisk lasers encapsulated with a SiNx stressor layer to produce tensile strain. A 300 nm-thick GeSn layer with 5.4 at% Sn, which is an indirect-bandgap semiconductor as-grown, is transformed via tensile strain engineering into a direct-bandgap semiconductor that supports lasing. In this approach, the low Sn concentration enables improved defect engineering and the tensile strain delivers a low density of states at the valence band edge, which is the light hole band. We observe ultra-low-threshold continuous-wave and pulsed lasing at temperatures up to 70 K and 100 K, respectively. Lasers operating at a wavelength of 2.5 μm have thresholds of 0.8 kW cm−2 for nanosecond pulsed optical excitation and 1.1 kW cm−2 under continuous-wave optical excitation. The results offer a path towards monolithically integrated group IV laser sources on a Si photonics platform

Superconducting single photon detectors integrated with diamond nanophotonic circuits

Photonic quantum technologies promise to repeat the success of integrated nanophotonic circuits in non-classical applications. Using linear optical elements, quantum optical computations can be performed with integrated optical circuits and thus allow for overcoming existing limitations in terms of scalability. Besides passive optical devices for realizing photonic quantum gates, active elements such as single photon sources and single photon detectors are essential ingredients for future optical quantum circuits. Material systems which allow for the monolithic integration of all components are particularly attractive, including III-V semiconductors, silicon and also diamond. Here we demonstrate nanophotonic integrated circuits made from high quality polycrystalline diamond thin films in combination with on-chip single photon detectors. Using superconducting nanowires coupled evanescently to travelling waves we achieve high detection efficiencies up to 66 % combined with low dark count rates and timing resolution of 190 ps. Our devices are fully scalable and hold promise for functional diamond photonic quantum devices.Comment: 28 pages, 5 figure

Stacking patterns in self-organized opal photonic crystal

International audienceIn this letter the authors present both experimental and numerical studies of the optical properties of four-layer artificial opals. The stacking of four layers of spheres may arise according to three different arrangements: face-centered cubic, hexagonal close packed, or double hexagonal close packed. The study shows that the transmission spectra features are characteristic of the type of stacking, and thus, each color region observed under the optical microscope can be unambiguously associated with one of the stacking types

Nanocrystalline diamond photonics platform with high quality factor photonic crystal cavities

International audienceWe demonstrate a diamond photonics platform with integrated suspended waveguide-cavity structures and two dimensional photonic crystal (PhC) cavities. PhC cavities with quality factors exceeding 2800 have been fabricated using a top-down approach from thin nanocrystalline diamond films. The developed technological process allows one to access these cavities in a fully planar geometry, including light injection and collection from the outside using lensed-fibers. This diamond platform opens the road to large scale fabrication of photonics devices including optical sensor chips

Surface-sensitive diamond photonic crystals for high-performance gas detection

International audienceDiamond slotted photonic crystal (PhC) cavities were fabricated and used for gas detection. They exhibit wavelength sensitivity reaching a 350 nm per unit change of the refractive index of the gaseous environment of the PhC. With a simple oxidized surface termination, diamond PhCs display an ultrahigh sensitivity to the surface adsorption of polar molecules. Gaseous concentrations as low as 80 parts per million (ppm) of hexanol vapor in nitrogen are probed, and a detection limit in the ppm range is inferred, demonstrating a high interest of such devices for trace sensing