Doubling the mobility of InAs/InGaAs selective area grown nanowires

Selective area growth (SAG) of nanowires and networks promise a route toward scalable electronics, photonics, and quantum devices based on III-V semiconductor materials. The potential of high-mobility SAG nanowires however is not yet fully realised, since interfacial roughness, misfit dislocations at the nanowire/substrate interface and nonuniform composition due to material intermixing all scatter electrons. Here, we explore SAG of highly lattice-mismatched InAs nanowires on insulating GaAs(001) substrates and address these key challenges. Atomically smooth nanowire/substrate interfaces are achieved with the use of atomic hydrogen (a-H) as an alternative to conventional thermal annealing for the native oxide removal. The problem of high lattice mismatch is addressed through an InxGa1-xAs buffer layer introduced between the InAs transport channel and the GaAs substrate. The Ga-In material intermixing observed in both the buffer layer and the channel is inhibited via careful tuning of the growth temperature. Performing scanning transmission electron microscopy and x-ray diffraction analysis along with low-temperature transport measurements we show that optimized In-rich buffer layers promote high-quality InAs transport channels with the field-effect electron mobility over 10 000 cm2 V-1 s-1. This is twice as high as for nonoptimized samples and among the highest reported for InAs selective area grown nanostructures.The project was supported by Microsoft Quantum, the European Research Council (ERC) under Grant No. 716655 (HEMs-DAM), and the European Union Horizon 2020 research and innovation program under the Marie Sklodowska-Curie Grant No. 722176. The authors acknowledge Dr. Keita Ohtani for technical support and fruitful discussions. D.V.B. is grateful to Dr. Juan-Carlos Estrada Saldaña for careful reading of the manuscript. The authors thank Francesco Montalenti, Marco Albani and Leo Miglio for scientific discussions. ICN2 acknowledges funding from Generalitat de Catalunya 2017 SGR 327. ICN2 is supported by the Severo Ochoa program from Spanish MINECO (Grant No. SEV-2017-0706) and is funded by the CERCA Programme/Generalitat de Catalunya. Part of the present work has been performed in the framework of Universitat Autònoma de Barcelona Materials Science Ph.D. program. The HAADF-STEM microscopy was conducted in the Laboratorio de Microscopias Avanzadas at Instituto de Nanociencia de Aragon-Universidad de Zaragoza. M.C.S. has received funding from the European Unionâs Horizon 2020 research and innovation programme under the Marie Sklodowska-Curie Grant Agreement No. 754510 (PROBIST). The funding agency is Consejo Superior de Investigaciones Científicas (CSIC) and the project reference is “Research Platform on Quantum Technologies PTI-001”