22 research outputs found

    Interaction effects at the magnetic-field induced metal-insulator transition in Si/SiGe superlattices

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    A metal-insulator transition was induced by in-plane magnetic fields up to 27 T in homogeneously Sb-doped Si/SiGe superlattice structures. The localisation is not observed for perpendicular magnetic fields. A comparison with magnetoconductivity investigations in the weakly localised regime shows that the delocalising effect originates from the interaction-induced spin-triplet term in the particle-hole diffusion channel. It is expected that this term, possibly together with the singlet particle-particle contribution, is of general importance in disordered n-type Si bulk and heterostructures.Comment: 5 pages, 3 figures, Solid State Communications, in prin

    Role of TGF-β in Tumor Progression and Metastasis

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    4.2.3.5 References for 4.2.3.0 - 4.2.3.4

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