192,957 research outputs found

    Microscopic mechanisms of magnetization reversal

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    Two principal scenarios of magnetization reversal are considered. In the first scenario all spins perform coherent motion and an excess of magnetic energy directly goes to a nonmagnetic thermal bath. A general dynamic equation is derived which includes a tensor damping term similar to the Bloch-Bloembergen form but the magnetization magnitude remains constant for any deviation from equilibrium. In the second reversal scenario, the absolute value of the averaged sample magnetization is decreased by a rapid excitation of nonlinear spin-wave resonances by uniform magnetization precession. We have developed an analytic k-space micromagnetic approach that describes this entire reversal process in an ultra-thin soft ferromagnetic film for up to 90^{o} deviation from equilibrium. Conditions for the occurrence of the two scenarios are discussed

    Atomic structure of Ge quantum dots on the Si(001) surface

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    In situ morphological investigation of the {105} faceted Ge islands on the Si(001) surface (hut clusters) have been carried out using an ultra high vacuum instrument integrating a high resolution scanning tunnelling microscope and a molecular beam epitaxy vessel. Both species of hut clusters--pyramids and wedges--were found to have the same structure of the {105} facets which was visualized. Structures of vertexes of the pyramidal clusters and ridges of the wedge-shaped clusters were revealed as well and found to be different. This allowed us to propose a crystallographic model of the {105} facets as well as models of the atomic structure of both species of the hut clusters. An inference is made that transitions between the cluster shapes are impossible.Comment: 6 pages, 6 figures. Accepted to JETP Letters (publication date 2010-03-25

    Negative differential thermal resistance and thermal transistor

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    We report on the first model of a thermal transistor to control heat flow. Like its electronic counterpart, our thermal transistor is a three-terminal device with the important feature that the current through the two terminals can be controlled by small changes in the temperature or in the current through the third terminal. This control feature allows us to switch the device between "off" (insulating) and "on" (conducting) states or to amplify a small current. The thermal transistor model is possible because of the negative differential thermal resistance.Comment: 4 pages, 4 figures. SHortened. To appear in Applied Physics Letter

    Flow Vorticity in Peripheral High Energy Heavy Ion Collisions

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    The vorticity development is studied in the reaction plane of peripheral relativistic heavy ion reactions where the initial state has substantial angular momentum. The earlier predicted rotation effect and Kelvin Helmholtz Instability, lead to significant initial vorticity and circulation. In low viscosity QGP this vorticity remains still significant at the time of freeze out of the system, even if damping due to the explosive expansion and the dissipation decreases the vorticity and circulation. In the reaction plane the vorticity arises from the initial angular momentum, and it is stronger than in the transverse plane where vorticity is caused by random fluctuations only

    Implementation of universal quantum gates based on nonadiabatic geometric phases

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    We propose an experimentally feasible scheme to achieve quantum computation based on nonadiabatic geometric phase shifts, in which a cyclic geometric phase is used to realize a set of universal quantum gates. Physical implementation of this set of gates is designed for Josephson junctions and for NMR systems. Interestingly, we find that the nonadiabatic phase shift may be independent of the operation time under appropriate controllable conditions. A remarkable feature of the present nonadiabatic geometric gates is that there is no intrinsic limitation on the operation time, unlike adiabatic geometric gates. Besides fundamental interest, our results may simplify the implementation of geometric quantum computation based on solid state systems, where the decoherence time may be very short.Comment: 5 pages, 2 figures; the version published in Phys. Rev. Let

    Modified Fragmentation Function from Quark Recombination

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    Within the framework of the constituent quark model, it is shown that the single hadron fragmentation function of a parton can be expressed as a convolution of shower diquark or triquark distribution function and quark recombination probability, if the interference between amplitudes of quark recombination with different momenta is neglected. The recombination probability is determined by the hadron's wavefunction in the constituent quark model. The shower diquark or triquark distribution functions of a fragmenting jet are defined in terms of overlapping matrices of constituent quarks and parton field operators. They are similar in form to dihadron or trihadron fragmentation functions in terms of parton operator and hadron states. Extending the formalism to the field theory at finite temperature, we automatically derive contributions to the effective single hadron fragmentation function from the recombination of shower and thermal constituent quarks. Such contributions involve single or diquark distribution functions which in turn can be related to diquark or triquark distribution functions via sum rules. We also derive QCD evolution equations for quark distribution functions that in turn determine the evolution of the effective jet fragmentation functions in a thermal medium.Comment: 23 pages in RevTex with 8 postscript figure
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