Further search for a neutral boson with a mass around 9 MeV/c2

Two dedicated experiments on internal pair conversion (IPC) of isoscalar M1 transitions were carried out in order to test a 9 MeV/c2 X-boson scenario. In the 7Li(p,e+e-)8Be reaction at 1.1 MeV proton energy to the predominantly T=0 level at 18.15 MeV, a significant deviation from IPC was observed at large pair correlation angles. In the 11B(d,n e+e-)12C reaction at 1.6 MeV, leading to the 12.71 MeV 1+ level with pure T=0 character, an anomaly was observed at 9 MeV/c2. The compatibility of the results with the scenario is discussed.Comment: 12 pages, 5 figures, 2 table

Third Cumulant of the total Transmission of diffuse Waves

The probability distribution of the total transmission is studied for waves multiple scattered from a random, static configuration of scatterers. A theoretical study of the second and third cumulant of this distribution is presented. Within a diagrammatic approach a theory is developed which relates the third cumulant normalized to the average, $\langle \langle T_a^3 \rangle \rangle$, to the normalized second cumulant $\langle \langle T_a^2 \rangle \rangle$. For a broad Gaussian beam profile it is found that $\langle \langle T_a^3 \rangle \rangle= \frac{16}{5} \langle \langle T_a^2 \rangle \rangle^2$. This is in good agreement with data of optical experiments.Comment: 16 pages revtex, 8 separate postscript figure

Organic Single-Crystal Field-Effect Transistors

We present an overview of recent studies of the charge transport in the field effect transistors on the surface of single crystals of organic low-molecular-weight materials. We first discuss in detail the technological progress that has made these investigations possible. Particular attention is devoted to the growth and characterization of single crystals of organic materials and to different techniques that have been developed for device fabrication. We then concentrate on the measurements of the electrical characteristics. In most cases, these characteristics are highly reproducible and demonstrate the quality of the single crystal transistors. Particularly noticeable are the small sub-threshold slope, the non-monotonic temperature dependence of the mobility, and its weak dependence on the gate voltage. In the best rubrene transistors, room-temperature values of $\mu$ as high as 15 cm$^2$/Vs have been observed. This represents an order-of-magnitude increase with respect to the highest mobility previously reported for organic thin film transistors. In addition, the highest-quality single-crystal devices exhibit a significant anisotropy of the conduction properties with respect to the crystallographic direction. These observations indicate that the field effect transistors fabricated on single crystals are suitable for the study of the \textit{intrinsic} electronic properties of organic molecular semiconductors. We conclude by indicating some directions in which near-future work should focus to progress further in this rapidly evolving area of research.Comment: Review article, to appear in special issue of Phys. Stat. Sol. on organic semiconductor

Field-Effect Transistors on Tetracene Single Crystals

We report on the fabrication and electrical characterization of field-effect transistors at the surface of tetracene single crystals. We find that the mobility of these transistors reaches the room-temperature value of $0.4 \ cm^2/Vs$. The non-monotonous temperature dependence of the mobility, its weak gate voltage dependence, as well as the sharpness of the subthreshold slope confirm the high quality of single-crystal devices. This is due to the fabrication process that does not substantially affect the crystal quality.Comment: Accepted by Appl. Phys. Lett, tentatively scheduled for publication in the November 24, 2003 issu

Influence of the gate leakage current on the stability of organic single-crystal field-effect transistors

We investigate the effect of a small leakage current through the gate insulator on the stability of organic single-crystal field-effect transistors (FETs). We find that, irrespective of the specific organic molecule and dielectric used, leakage current flowing through the gate insulator results in an irreversible degradation of the single-crystal FET performance. This degradation occurs even when the leakage current is several orders of magnitude smaller than the source-drain current. The experimental data indicate that a stable operation requires the leakage current to be smaller than $10^{-9} \ \mathrm{A/cm}^2$. Our results also suggest that gate leakage currents may determine the lifetime of thin-film transistors used in applications.Comment: submitted to Appl. Phys. Let

POPULATION DYNAMICS AND SPAWNING OF THE FLATFISH SOLEA BLEEKERI AND PSEUDORHOMBUS ARSIUS IN THE INTERTIDAL AREA OF INHACA ISLAND, MO&#199AMBIQUE

The population dynamics of flatfish Solea bleekeri and Pseudorhombus arsius within the intertidal area of Inhaca Island, Moçambique, was investigated using bottom trawl data collected during summer (December 1996–March 1997) and winter (June 1997–August 1997). The endemic S. bleekeri is a small, relatively slowgrowing species with low rates of natural mortality. Densities of juveniles were significantly greater in winter (24.7 fish 1 000 m-2) than in summer (10.8 fish 1 000 m-2), probably because of intensive spawning during summer. Greater catches of S. bleekeri were taken by night than by day. Densities of P. arsius did not differ significantly between day and night or among seasons. Mean density of P. arsius was 53 fish 1 000 m-2 for the survey. Both species preferred the same substrata, significantly greater densities being found on the mudflats and in the tidal channels. Both seem to complete two life cycles within a year.Afr. J. mar. Sci. 25: 49–6

An algorithm for calculating the Lorentz angle in silicon detectors

Future experiments will use silicon sensors in the harsh radiation environment of the LHC (Large Hadron Collider) and high magnetic fields. The drift direction of the charge carriers is affected by the Lorentz force due to the high magnetic field. Also the resulting radiation damage changes the properties of the drift. In this paper measurements of the Lorentz angle of electrons and holes before and after irradiation are reviewed and compared with a simple algorithm to compute the Lorentz angle.Comment: 13 pages, 7 figures, final version accepted by NIMA. Mainly clarifications included and slightly shortene

Audio-visual interaction in emotion perception for communication

Information from multiple modalities contributes to recognizing emotions. While it is known interactions occur between modalities, it is unclear what characterizes these. These interactions, and changes in these interactions due to sensory impairments, are the main subject of this PhD project. This extended abstract for the Doctoral Symposium of ETRA 2018 describes the project; its background, what I hope to achieve, and some preliminary results.</p

Low Mass Dark Matter and Invisible Higgs Width In Darkon Models

The Standard Model (SM) plus a real gauge-singlet scalar field dubbed darkon (SM+D) is the simplest model possessing a weakly interacting massive particle (WIMP) dark-matter candidate. In this model, the parameters are constrained from dark matter relic density and direct searches. The fact that interaction between darkon and SM particles is only mediated by Higgs boson exchange may lead to significant modifications to the Higgs boson properties. If the dark matter mass is smaller than a half of the Higgs boson mass, the Higgs boson can decay into a pair of darkons resulting in a large invisible branching ratio. The Higgs boson will be searched for at the LHC and may well be discovered in the near future. If a Higgs boson with a small invisible decay width will be found, the SM+D model with small dark matter mass will be in trouble. We find that by extending the SM+D to a two-Higgs-doublet model plus a darkon (THDM+D) it is possible to have a Higgs boson with a small invisible branching ratio and at the same time the dark matter can have a low mass. We also comment on other implications of this model.Comment: RevTeX, 15 pages, 11 figures. A few typos corrected and some references adde