Ensemble-induced strong light-matter coupling of a single quantum emitter

We discuss a technique to strongly couple a single target quantum emitter to a cavity mode, which is enabled by virtual excitations of a nearby mesoscopic ensemble of emitters. A collective coupling of the latter to both the cavity and the target emitter induces strong photon non-linearities in addition to polariton formation, in contrast to common schemes for ensemble strong coupling. We demonstrate that strong coupling at the level of a single emitter can be engineered via coherent and dissipative dipolar interactions with the ensemble, and provide realistic parameters for a possible implementation with SiV$^{-}$ defects in diamond. Our scheme can find applications, amongst others, in quantum information processing or in the field of cavity-assisted quantum chemistry.Comment: 13 pages, 6 figures; substantially revised manuscript; see arXiv:1912.12703 for mathematical derivation

A GaAs metalorganic vapor phase epitaxy growth process o reduce Ge out-diffusion from the Ge substrate

A barrier based on GaAs for controlling the Ge out diffusion has been developed by metalorganic vapor phase epitaxy. It is based on a thin GaAs layer (50 nm) grown at a low temperature (≈500 °C) on top of a predeposition layer, showing that GaAs prevents the Ge diffusing when it is grown at a low temperature. Additionally, two different predeposition monolayers have been compared, concluding that when the Ga is deposited first, the diffusions across the GaAsGe heterointerface decrease

Influence of GaInP ordering on the electronic quality of concentrator solar cells

The ordering phenomenon produces a reduction in the band gap of the GaInP material. Though a drawback for many optoelectronic applications, ordering can be used as an additional degree of material and device engineering freedom. The performance of the record efficiency GaInP/GaAs/Ge multijunction solar cells depends on the quality and design of the GaInP top cell, which can be affected also by ordering. The tradeoff existing between band gap and minority carrier properties, and the possibility of creating a back surface field (BSF) structure based on an order–disorder GaInP heterostructure makes the study of the ordering appealing for solar cell applications. In this work, the ordering dependency with the growth conditions and substrate orientation is studied. The results obtained are presented to enrich and extend the data available in the literature. Then the properties of order–disorder GaInP heterostructures are assessed by using them as BSF in GaInP concentrator solar cells. The external quantum efficiency (EQE) shows a good behavior of these BSF layers, but unexpectedly poor electronic quality in the active layers. Although the exact origin of this problem remains to be known, it is attributed to traps introduced by the ordered/disordered domains matrix or growth native defects. EQE measurements with bias light show a recovery of the minority carrier properties, presumably due to the saturation of the traps

Functional Quantum Nodes for Entanglement Distribution over Scalable Quantum Networks

We demonstrate entanglement distribution between two remote quantum nodes located 3 meters apart. This distribution involves the asynchronous preparation of two pairs of atomic memories and the coherent mapping of stored atomic states into light fields in an effective state of near maximum polarization entanglement. Entanglement is verified by way of the measured violation of a Bell inequality, and can be used for communication protocols such as quantum cryptography. The demonstrated quantum nodes and channels can be used as segments of a quantum repeater, providing an essential tool for robust long-distance quantum communication.Comment: 10 pages, 7 figures. Text revised, additional information included in Appendix. Published online in Science Express, 5 April, 200

One-way quantum computing in a decoherence-free subspace

We introduce a novel scheme for one-way quantum computing (QC) based on the use of information encoded qubits in an effective cluster state resource. With the correct encoding structure, we show that it is possible to protect the entangled resource from phase damping decoherence, where the effective cluster state can be described as residing in a Decoherence-Free Subspace (DFS) of its supporting quantum system. One-way QC then requires either single or two-qubit adaptive measurements. As an example where this proposal can be realized, we describe an optical lattice setup where the scheme provides robust quantum information processing. We also outline how one can adapt the model to provide protection from other types of decoherence.Comment: 9 pages, 4 figures, RevTeX

Angle-resolved photoemission and first-principles electronic structure of single-crystalline α\alpha-uranium (001)

Continuing the photoemission study begun with the work of Opeil et al. [Phys. Rev. B \textbf{73}, 165109 (2006)], in this paper we report results of an angle-resolved photoemission spectroscopy (ARPES) study performed on a high-quality single-crystal $\alpha$-uranium at 173 K. The absence of surface-reconstruction effects is verified using X-ray Laue and low-energy electron diffraction (LEED) patterns. We compare the ARPES intensity map with first-principles band structure calculations using a generalized gradient approximation (GGA) and we find good correlations with the calculated dispersion of the electronic bands

Magnetic Damping of Solid Solution Semiconductor Alloys

The objective of this study is to: (1) experimentally test the validity of the modeling predictions applicable to the magnetic damping of convective flows in electrically conductive melts as this applies to the bulk growth of solid solution semiconducting materials; and (2) assess the effectiveness of steady magnetic fields in reducing the fluid flows occurring in these materials during processing. To achieve the objectives of this investigation, we are carrying out a comprehensive program in the Bridgman and floating-zone configurations using the solid solution alloy system Ge-Si. This alloy system has been studied extensively in environments that have not simultaneously included both low gravity and an applied magnetic field. Also, all compositions have a high electrical conductivity, and the materials parameters permit reasonable growth rates. An important supporting investigation is determining the role, if any, that thermoelectromagnetic convection (TEMC) plays during growth of these materials in a magnetic field. TEMC has significant implications for the deployment of a Magnetic Damping Furnace in space. This effect will be especially important in solid solutions where the growth interface is, in general, neither isothermal nor isoconcentrational. It could be important in single melting point materials, also, if faceting takes place producing a non-isothermal interface. In conclusion, magnetic fields up to 5 Tesla are sufficient to eliminate time-dependent convection in silicon floating zones and possibly Bridgman growth of Ge-Si alloys. In both cases, steady convection appears to be more significant for mass transport than diffusion, even at 5 Tesla in the geometries used here. These results are corroborated in both growth configurations by calculations

Laser operation of Ga(NAsP) lattice-matched to (001) silicon substrate

The lattice-matched growth of the direct band gap material Ga(NAsP) is a seminal concept for the monolithic integration of III/V laser on a silicon substrate. Here, we report on the growth, characterization, and lasing properties of Ga(NAsP)/(BGa)(AsP) multi quantum well heterostructures embedded in (BGa)P cladding layers which were deposited on an exactly oriented (001) Si substrate. Structural investigations confirm a high crystal quality without any indication for misfit or threading dislocation formation. Laser operation between 800 nm and 900 nm of these broad area device structures was achieved under optical pumping as well as electrical injection for temperatures up to 150 K. This “proof of principle” points to the enormous potential of Ga(NAsP) as an optical complement to Si microelectronics

Temporal variability of summer-time ozone and aerosols in the free troposphere over the eastern North Atlantic

In the free troposphere over Tenerife in the summer, O3 concentrations are anti-correlated with major pollutant aerosols (nss-SO = 4 and NO−3) and with 210Pb, a tracer for boundary layer sources. In contrast, O3 is highly correlated with 7Be, a product of cosmic ray interactions in the upper troposphere and stratosphere. This suggests that natural O3 sources (i.e. the stratosphere) might be playing an important role. Nonetheless our results do not preclude the possibility that substantial amounts of pollution-related O3 could be transported in the free troposphere. However, to be consistent with our results, the transport mechanisms would have to incorporate efficient processes for the removal of pollutant aerosol species and 210Pb