Alignment procedure of the LHCb Vertex Detector

LHCb is one of the four main experiments of the Large Hadron Collider (LHC) project, which will start at CERN in 2008. The experiment is primarily dedicated to B-Physics and hence requires precise vertex reconstruction. The silicon vertex locator (VELO) has a single hit precision of better than 10 micron and is used both off-line and in the trigger. These requirements place strict constraints on its alignment. Additional challenges for the alignment arise from the detector being retracted between each fill of the LHC and from its unique circular disc r/phi strip geometry. This paper describes the track based software alignment procedure developed for the VELO. The procedure is primarily based on a non-iterative method using a matrix inversion technique. The procedure is demonstrated with simulated events to be fast, robust and to achieve a suitable alignment precision.Comment: accepted for publication in NIM

Laser monitoring system for the ATLAS tile calorimeter

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LHCb VELO software alignment, Part III: the alignment of the relative sensor positions

The LHCb Vertex Locator contains 42 silicon sensor modules. Each module has two silicon sensors. A method for determining the relative alignment of the silicon sensors within each module from data is presented. The software implementation details are discussed. Monte-Carlo simulation studies are described that demonstrate an alignment precision of 1.3 micron is obtained in the sensor plane

LHCb VELO software alignment - PART II: the alignment of the VELO detector-halves

The software alignment of the Vertex Locator (VELO) is a critical component of the LHCb alignment strategy. This note demonstrates a potential algorithm to perform the alignment of the VELO detector-halves. The approach described in this document, and the tools developed, are also applicable to the alignment of the other LHCb sub-systems and the global relative alignment of the sub-detectors

Photovoltaic response around a unique180° ferroelectric domain wall in single crystalline BiFeO3

Using an experimental setup designed to scan a submicron sized light spot and collect the photogenerated current through larger electrodes, we map the photovoltaic response in ferroelectric BiFeO3 single crystals. We study the effect produced by a unique 180° ferroelectric domain wall (DW) and show that the photocurrent maps are significantly affected by its presence and shape. The effect is large in its vicinity and in the Schottky barriers at the interface with the Au electrodes, but no extra photocurrent is observed when the illuminating spot touches the DW, indicating that this particular entity is not the heart of specific photo-electric properties. Using 3D modelling, we argue that the measured effect is due to the spatial distribution of internal fields which are significantly affected by the charge of the DW due to its distortion

Interplay of structure and spin-orbit strength in magnetism of metal-benzene sandwiches: from single molecules to infinite wires

Based on first-principles density functional theory calculations we explore electronic and magnetic properties of experimentally producible sandwiches and infinite wires made of repeating benzene molecules and transition-metal atoms of V, Nb, and Ta. We describe the bonding mechanism in the molecules and in particular concentrate on the origin of magnetism in these structures. We find that all the considered systems have sizable magnetic moments and ferromagnetic spin-ordering, with the single exception of the V3-Bz4 molecule. By including the spin-orbit coupling into our calculations we determine the easy and hard axes of the magnetic moment, the strength of the uniaxial magnetic anisotropy energy (MAE), relevant for the thermal stability of magnetic orientation, and the change of the electronic structure with respect to the direction of the magnetic moment, important for spin-transport properties. While for the V-based compounds the values of the MAE are only of the order of 0.05-0.5 meV per metal atom, increasing the spin-orbit strength by substituting V with heavier Nb and Ta allows to achieve an increase in anisotropy values by one to two orders of magnitude. The rigid stability of magnetism in these compounds together with the strong ferromagnetic ordering makes them attractive candidates for spin-polarized transport applications. For a Nb-benzene infinite wire the occurrence of ballistic anisotropic magnetoresistance is demonstrated.Comment: 23 pages, 8 figure

Control of the spin to charge conversion using the inverse Rashba-Edelstein effect

Under the terms of the Creative Commons Attribution 3.0 Unported License to their work.We show here that using spin orbit coupling interactions at a metallic interface it is possible to control the sign of the spin to charge conversion in a spin pumping experiment. Using the intrinsic symmetry of the “Inverse Rashba Edelstein Effect” (IREE) in a Bi/Ag interface, the charge current changes sign when reversing the order of the Ag and Bi stacking. This confirms the IREE nature of the conversion of spin into charge in these interfaces and opens the way to tailoring the spin sensing voltage by an appropriate trilayer sequence.We would like to acknowledge financial support from the European Commission through the Marie Curie Intra European Fellowship Project No. 301656: AtomicFMR, funded by the 7th Framework Programme. This work was supported by Spanish Ministry of Economy and Competitivity through Project No. MAT2011-27553-C02, including FEDER funds, and by the Aragon Regional Government.Peer reviewe

Negative Domain Wall Contribution to the Resistivity of Microfabricated Fe Wires

The effect of domain walls on electron transport has been investigated in microfabricated Fe wires (0.65 to 20 $\mu m$ linewidths) with controlled stripe domains. Magnetoresistance (MR) measurements as a function of domain wall density, temperature and the angle of the applied field are used to determine the low field MR contributions due to conventional sources in ferromagnetic materials and that due to the erasure of domain walls. A negative domain wall contribution to the resistivity is found. This result is discussed in light of a recent theoretical study of the effect of domain walls on quantum transport.Comment: 7 pages, 4 postscript figures and 1 jpg image (Fig. 1

Response of electrically coupled spiking neurons: a cellular automaton approach

Experimental data suggest that some classes of spiking neurons in the first layers of sensory systems are electrically coupled via gap junctions or ephaptic interactions. When the electrical coupling is removed, the response function (firing rate {\it vs.} stimulus intensity) of the uncoupled neurons typically shows a decrease in dynamic range and sensitivity. In order to assess the effect of electrical coupling in the sensory periphery, we calculate the response to a Poisson stimulus of a chain of excitable neurons modeled by $n$-state Greenberg-Hastings cellular automata in two approximation levels. The single-site mean field approximation is shown to give poor results, failing to predict the absorbing state of the lattice, while the results for the pair approximation are in good agreement with computer simulations in the whole stimulus range. In particular, the dynamic range is substantially enlarged due to the propagation of excitable waves, which suggests a functional role for lateral electrical coupling. For probabilistic spike propagation the Hill exponent of the response function is $\alpha=1$, while for deterministic spike propagation we obtain $\alpha=1/2$, which is close to the experimental values of the psychophysical Stevens exponents for odor and light intensities. Our calculations are in qualitative agreement with experimental response functions of ganglion cells in the mammalian retina.Comment: 11 pages, 8 figures, to appear in the Phys. Rev.

Small-polaron hopping conductivity in bilayer manganite La1.2_{1.2}Sr1.8_{1.8}Mn2_{2}O7_{7}

We report anisotropic resistivity measurements on a La$_{1.2}$Sr$_{1.8}$Mn$_{2}$O$_{7}$ single crystal over a temperature $T$ range from 2 to 400 K and in magnetic fields $H$ up to 14 T. For $T\geq 218$ K, the temperature dependence of the zero-field in-plane $\rho_{ab}(T)$ resistivity obeys the adiabatic small polaron hopping mechanism, while the out-of-plane $\rho_{c}(T)$ resistivity can be ascribed by an Arrhenius law with the same activation energy. Considering the magnetic character of the polarons and the close correlation between the resistivity and magnetization, we developed a model which allows the determination of $\rho_{ab,c}(H,T)$. The excellent agreement of the calculations with the measurements indicates that small polarons play an essential role in the electrical transport properties in the paramagnetic phase of bilayer manganites.Comment: 4 pages, 3 figures, to appear in Physical Review