6 research outputs found

    Characteristics of longitudinal optical phonon assisted quantum carrier capture process-temperature and bias dependence

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    The quantum carrier capture time in a quantum well laser is calculated as a function of temperature and bias current. The calculated results show good consistency with recent measurements on the small signal frequency response of a quantum well laser at cryogenic temperatures. This calculation reveals some of the characteristics of longitudinal optical phonon assisted quantum carrier capture phenomena in quantum well structures.© 1995 American Institute of Physics

    UNAMBIGUOUS DETERMINATION OF QUANTUM CAPTURE, CARRIER DIFFUSION, AND INTRINSIC EFFECTS IN QUANTUM-WELL LASER DYNAMICS USING WAVELENGTH-SELECTIVE OPTICAL MODULATION

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    A novel wavelength-dependent optical modulation technique capable of explicitly delineating the effects of quantum capture, carrier diffusion, and other intrinsic effects in quantum-well laser dynamics is described. Results for a compressively strained multiple-quantum-well laser are presented

    Spontaneous emission measurements for resolving damping mechanisms in direct modulation of quantum well lasers

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    We demonstrate a measurement technique for determining the contribution of carrier transport effect on the maximum modulation bandwidth in quantum well lasers. This technique independently measures the ratio of the effective carrier capture to escape times, as well as the contribution from intraband damping mechanisms, in an operating laser. Every single parameter in the present model for modulation dynamics of quantum well lasers can now be determined experimentally, which enables a consistency check on its validity. © 1996 American Institute of Physics

    Compound Heterostructure Semiconductor Lasers and Photodetectors

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