Deposition and patterning of magnetic atom trap lattices in FePt films with periods down to 200nm

We report on the epitaxial growth and the characterization of thin FePt films and the subsequent patterning of magnetic lattice structures. These structures can be used to trap ultracold atoms for quantum simulation experiments. We use Molecular Beam Epitaxy (MBE) to deposit monocrystalline FePt films with a thickness of 50 nm. The films are characterized with X-ray scattering and Mossbauer spectroscopy to determine the long range order parameter and the hard magnetic axes. A high monocrystalline fraction was measured as well as a strong remanent magnetization of M = 900 kA/m and coercivity of 0.4 T. Using Electron Beam Lithography (EBL) and argon ion milling we create lattice patterns with a period down to 200 nm, and a resolution of 30 nm. The resulting lattices are imaged in a Scanning Electron Microscope in cross-section created by a Focused Ion Beam. A lattice with continuously varying lattice constant ranging from 5 micrometer down to 250nm has been created to show the wide range of length scales that can now be created with this technique.Comment: 8 pages, 10 figure

Surface quality studies of high Tc_{c} superconductors of the Hg , Tl and Hgx_{x}Tl1−x_{1-x}-families: RBS and resonant C and O backscattering studies

The composition, crystallinity, uniformity, purity, and thermal stability of cuprate superconductors have been studied by Rutherford backscattering and channeling spectrometry, and 3.045 MeV He$^{+}$ oxygen non-Rutherford resonant scattering. Further experiments have been performed with 1.75 MeV H$^{+}$carbon non-Rutherford resonant scattering. Three sets of samples were studied : HgBa$_{2}$CuO$_{(4+\delta)}$ (Hg1201), Hg$_{x}$T1$_{1-x}$Ba$_{2}$Ca$_{2}$Cu$_{3}$O$_{(2n+\delta)}$ (Hg,T1-1223) and T1$_{1.85}$Ba$_{2}$CuO$_{6}$/LaA10$_{3}$ (T1-2201), either in bulk or as an epitaxial thin film. It was observed that the superconductors exhibit a metal deficiency near the surface, which is largely compensated by excess oxygen. Moreover, the samples are significantly contaminated with carbon within the probing region of the H$^+$ beam. The thermal stability and surface degradation were studied in both oxidizing ambient and vacuum. As a general trend, the heavy metal deficiency — and consequently the compensating oxygen excess — is enhanced as the temperature increases

The Influence of an Adsorbate Layer on Adatom Diffusion and Island Nucleation: Fe on Si(111)-√3 x √3-Au

Using scanning tunneling microscopy, the influence of a thin Au layer on the diffusion of Fe adatoms and the subsequent island nucleation on a Si(111) surface is investigated. The adsorbate induces thestructure that increases the surface mobility of subsequently deposited Fe atoms, resulting in the formation well-defined nanoclusters. Surprisingly, the domain walls—inherent to the reconstruction—do not influence the surface diffusion, which demonstrates that the passivation is of much more importance for the self-assembly than the surface corrugation. Using the decoupling of the diffusion and nucleationonthe surface and the reactionwiththe surface and conventional nucleation theory, the activation energy for surface diffusionEd = 0.61 eV and the critical cluster sizei = 3 are determined, which reveal the microscopic details of the diffusion and nucleation processes

Minority anion substitution by Ni in ZnO

We report on the lattice location of implanted Ni in ZnO using the beta(-) emission channeling technique. In addition to the majority substituting for the cation (Zn), a significant fraction of the Ni atoms occupy anion (O) sites. Since Ni is chemically more similar to Zn than it is to O, the observed O substitution is rather puzzling. We discuss these findings with respect to the general understanding of lattice location of dopants in compound semiconductors. In particular, we discuss potential implications on the magnetic behavior of transition metal doped dilute magnetic semiconductors. (C) 2013 AIP Publishing LLC

Damage and strain in epitaxial GexSi1–x films irradiated with Si

The damage and strain induced by irradiation of both relaxed and pseudomorphic GexSi1–x films on Si(100) with 100 keV 28Si ions at room temperature have been studied by MeV 4He channeling spectrometry and x-ray double-crystal diffractometry. The ion energy was chosen to confine the major damage to the films. The results are compared with experiments for room temprature Si irradiation of Si(100) and Ge(100). The maximum relative damage created in low-Ge content films studied here (x=10%, 13%, 15%, 20%, and 22%) is considerably higher than the values obtained by interpolating between the results for relative damage in Si-irradiated single crystal Si and Ge. This, together with other facts, indicates that a relatively small fraction of Ge in Si has a significant stabilizing effect on the retained damage generated by room-temperature irradiation with Si ions. The damage induced by irradiation produces positive perpendicular strain in GexSi1–x, which superimposes on the intrinsic positive perpendicular strain of the pseudomorphic or partially relaxed films. In all of the cases studied here, the induced maximum perpendicular strain and the maximum relative damage initially increase slowly with the dose, but start to rise at an accelerated rate above a threshold value of ~0.15% and 15%, respectively, until the samples are amorphized. The pre-existing pseudomorphic strain in the GexSi1–x film does not significantly influence the maximum relative damage created by Si ion irradiation for all doses and x values. The relationship between the induced maximum perpendicular strain and the maximum relative damage differs from that found in bulk Si(100) and Ge(100)

Morphology-Controllable Synthesis of CeO2on a Pt Electrode

Nanoscale cerium dioxides with shape of nanoparticles, nanorods, and nanotubes were electrochemically synthesized. The morphology of CeO2was modulated by changing electrode potential and potential direction. CeO2nanorods and CeO2nanotubes were synthesized via the potentiostatic and cyclic voltammeteric methods, respectively. The morphology and structure of the obtained CeO2were characterized by field emission scanning electron microscope (FESEM) and X-ray diffraction (XRD). A possible formation mechanism has been suggested to illuminate the relationship between the preparation condition and the morphology of CeO2

Thermal stability of interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As

© 2019 American Physical Society. In (Ga,Mn)As, a model dilute magnetic semiconductor, the electric and magnetic properties are strongly influenced by the lattice sites occupied by the Mn atoms. In particular, the highest Curie temperatures are achieved upon thermal annealing in a narrow temperature window around 200°C, by promoting the diffusion of interstitial Mn towards the surface. In this work, we determined the thermal stability of both interstitial and substitutional Mn in ferromagnetic (Ga,Mn)As thin films, using the emission channeling technique. At a higher Mn concentration, the temperatures at which substitutional and interstitial Mn become mobile not only decrease, but also become closer to each other. These findings advance our understanding of self-compensation in (Ga,Mn)As by showing that the strong dependence of the Curie temperature on annealing temperature around 200°C is a consequence of balance between diffusion of interstitial Mn and segregation of substitutional Mn