IJzertijdbewoning en gevechtslinies uit WOI. Een opgraving te Beveren, KMO-zone Doornpark.

Dit rapport werd ingediend bij het agentschap samen met een aantal afzonderlijke digitale bijlagen. Een aantal van deze bijlagen zijn niet inbegrepen in dit pdf document en zijn niet online beschikbaar. Sommige bijlagen (grondplannen, fotos, spoorbeschrijvingen, enz.) kunnen van belang zijn voor een betere lezing en interpretatie van dit rapport. Indien u deze bijlagen wenst te raadplegen kan u daarvoor contact opnemen met: [email protected]

50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform

We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF, A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss

Low-power, low-penalty, flip-chip integrated, 10Gb/s ring-based 1V CMOS photonics transmitter

Modulation with 7.5dB transmitter penalty is demonstrated from a novel 1.5Vpp differential CMOS driver flip-chip integrated with a Si ring modulator, consuming 350fJ/bit from a single 1V supply at bit rates up to 10Gb/s

4:1 silicon photonic serializer for data center interconnects demonstrating 104 Gbaud OOK and PAM4 transmission

With next-generation optical interconnects for data centers aiming for 0.8 Tb/s or 1.6 Tb/s, 100 Gbaud capable transmitters from a single-laser source will become indispensable. However, these lane rates would require bandwidths of 70 GHz or more, doubling the bandwidth requirements of the electrical and optical components with respect to the fastest current generation of optical interconnects running at 53 Gbaud pulse-amplitude modulation (PAM-4). In this paper, we propose an integrated 4: 1 optical serializer topology to achieve 104 Gbaud On-Off Keying (OOK) and PAM-4 transmission using only quarter rate components at the transmitter. We show 104 (208) Gbit/s OOK (PAM4) transmission using four GeSi electro-absorption modulators (EAMs) over 1 km of single-mode fiber (SMF). For 104 Gbaud OOK, clearly open eyes are obtained, while for PAM-4 the performance is limited by the nonlinear E/O-transfer function of the EAM. However, adding pre-emphasis in the electrical driver or replacing the single EAM with our previously demonstrated optical DAC topology-consisting of two EAMs in parallel with a 90 degrees phase difference between each-could substantially improve these results. Additionally, we discuss the possibility of a four channel transmitter (4 x 208 Gb/s) from a single mode locked laser, amounting to a 832 Gb/s rate based on the current demonstrator

InP/InGaAs photodetector on SOI photonic circuitry

We present an InP-based membrane p-i-n photodetector on a silicon-on-insulator sample containing a Si-wiring photonic circuit that is suitable for use in optical interconnections on Si integrated circuits (ICs). The detector mesa footprint is 50 mu m(2), which is the smallest reported to date for this kind of device, and the junction capacitance is below 10 fF, which allows for high integration density and low dynamic power consumption. The measured detector responsivity and 3-dB bandwidth are 0.45 A/W and 33 GHz, respectively. The device fabrication is compatible with wafer-scale processing steps, guaranteeing compatibility toward future-generation electronic IC processing

Temperature and wavelength drift tolerant WDM transmission and routing in on-chip silicon photonic interconnects

We demonstrate a temperature and wavelength shift resilient silicon transmission and routing interconnect system suitable for multi-socket interconnects, utilizing a dual-strategy CLIPP feedback circuitry that safeguards the operating point of the constituent photonic building blocks along the entire on-chip transmission-multiplexing-routing chain. The control circuit leverages a novel control power-independent and calibration-free locking strategy that exploits the 2nd derivative of ring resonator modulators (RMs) transfer function to lock them close to the point of minimum transmission penalty. The system performance was evaluated on an integrated Silicon Photonics 2-socket demonstrator, enforcing control over a chain of RM-MUX-AWGR resonant structures and stressed against thermal and wavelength shift perturbations. The thermal and wavelength stress tests ranged from 27 degrees C to 36 degrees C and 1309.90 nm to 1310.85 nm and revealed average eye diagrams Q-factor values of 5.8 and 5.9 respectively, validating the system robustness to unstable environments and fabrication variations. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreemen