Comparison of the material quality of AlxIn1-xN (x ~ 0-0.50) films deposited on Si (100) and (111) by reactive RF sputtering

Here, we compare the material quality of AlxIn1-xN layers deposited on Si with different crystallographic orientations, (100) and (111), via radio-frequency (RF) sputtering. To modulate their Al content, the Al RF power was varied from 0 to 225 W, whereas the In RF power and deposition temperature were fixed at 30 W and 300oC, respectively. X-ray diffraction measurements reveal a c-axis-oriented wurtzite structure with no phase separation regardless of the Al content (x = 0-0.50), which increases with the Al power supply. The surface morphology of the AlxIn1-xN layers improves with increasing Al content and it is similar for samples grown on both Si substrates (the root-mean-square roughness decreases from 12 nm to 2.5 nm). Furthermore, from TEM images we notice a similar grain-like columnar morphology and defect density on samples deposited on both Si substrates under the same conditions. Simultaneously grown AlxIn1-xN-on-sapphire samples point to a residual n-type carrier concentration in the 1020-1021 cm-3 range. The optical band gap energy of these layers evolves from 1.75 eV to 2.56 eV with increasing Al content, consistent with the blue shift of their low-temperature photoluminescence. In general, the material quality of the AlxIn1-xN films on Si is similar for both crystallographic orientations. Nonetheless, samples deposited on sapphire show an improved structural and morphological characteristic likely due to the lower difference in lattice constants between the nitride and the sapphire substrate

Effect of the quantum well thickness on the performance of InGaN photovoltaic cells

International audienceWe report on the influence of the quantum well thickness on the effective band gap and conversion efficiency of In0.12Ga0.88N/GaN multiple quantum well solar cells. The band-to-band transition can be redshifted from 395 to 474 nm by increasing the well thickness from 1.3 to 5.4 nm, as demonstrated by cathodoluminescence measurements. However, the redshift of the absorption edge is much less pronounced in absorption: in thicker wells, transitions to higher energy levels dominate. Besides, partial strain relaxation in thicker wells leads to the formation of defects, hence degrading the overall solar cell performance. InGaN alloys are considered as promising candidates for high-efficiency photovoltaic devices [1-4] since their band gap spans almost the whole solar spectrum from 0.7 eV (InN) to 3.4 eV (GaN). This makes theoretically possible the development of all-InGaN multijunction solar cells with a freely customizable number of junctions to enhance the overall efficiency. However, the large lattice mismatch between GaN and InN has led several groups to study the possibility of hybrid integration, combining an InGaN cell in a tandem device with silicon [5,6] or other non-III-nitride [7] photovoltaic cells. The difficulty of growing high-quality InGaN layers increases with the In content. Reports of InGaN-based junctions with an In mole fraction exceeding 0.3 are rare [1]; the best external quantum efficiencies (EQEs) exceeding 0.7 are obtained at around 400 nm and quickly drop for longer wavelengths [8-10]. The main challenges are the large dislocation density and In-clustering, caused by the strong tendency to phase separation during growth. Absorbing layers in the form of a multiple quantum well (MQW) structure are often used to delay strain relaxation. Furthermore, the quantum confined Stark effect (QCSE) associated to the strong piezoelectric fields in the InGaN/GaN system [11] offers the possibility to tune the effective band gap of the structure by adjusting the quantum well (QW) and barrier thickness (tQW and tB, respectively). The effect of tuning tB in InGaN/GaN MQW photovoltaic devices has been studied by Wierer et al. [12] and Watanabe et al. [13]. According to their results, the absorption cutoff of the solar cells redshifts with decreasing tB. However, this does not always translate in enhanced overall cell efficiency, since the short circuit current density (Jsc) and open circuit voltage (Voc) also depend on tB. In this paper, we focus on the influence of the QW thickness on the effective band gap of the junction and its impact on the overall cell efficiency. We experimentally demonstrate that the band-to-band transition in InGaN QWs can be significantly redshifted in larger QWs. However, this redshift appears linked to a dramatic enlargement of the Stokes shift, so that increasing the tQW above a few nm is n

Novel InN/InGaN multiple quantum well structures for slow‐light generation at telecommunication wavelengths

The third order susceptibility is responsible for a variety of optical non-linear phenomena -like self focusing, phase conjugation and four-wave mixing- with applications in coherent control of optical communication. InN is particularly attractive due to its near-IR bandgap and predicted high nonlinear effects. Moreover, the synthesis of InN nanostructures makes possible to taylor the absorption edge in the telecomunication spectral range and enhance nonlinear parameters thanks to carrier confinement. In this work, we assess the nonlinear optical behavior of InN/InxGa(1-x)N (0.9 > x > 0.7) multiplequantum-well (MQW) structures grown by plasma-assisted MBE on GaN-on-sapphire templates. Low-temperature (5 K) photoluminescence measurements show near-IR emission whose intensity increases with the In content in the barriers, which is explained in terms of the existence of piezoelectric fields in the structures. The nonlinear optical absorption coefficient, α2, were measured at 1.55 μm using the Z-scan method. We observe a strong dependence of the nonlinear absorption coefficient on the In content in the barriers. Saturable absorption is observed for the sample with x = 0.9, with α2 ̃ -9x103 cm/GW. For this sample, an optically controlled reduction of the speed of light by a factor S ∼ 80 is obtained at 1.55 μm. © 2010 WILEY-VCH Verlag GmbH & Co. KGaA

Waveguide saturable absorbers at 1.55 μm based on intraband transitions in GaN/AlN QDs

We report on the design, fabrication and optical characterization of GaN/AlN quantum-dot-based waveguides for all-optical switching via intraband absorption saturation at 1.55 μm. The transmittance of the TMpolarized light increases with the incident optical power due to the saturation of the s-p z intraband absorption in the QDs. Single-mode waveguides with a ridge width of 2 μm and a length of 1.5 mm display 10 dB absorption saturation of the TM-polarized light for an input pulse energy of 8 p J and 150 fs. © 2013 Optical Society of America.This work was supported by Spanish Government Project TEC2012-37958-C02-01, Comunidad de Madrid Project S2009/ESP-178, and the EU Marie Curie IEF ‘SolarIn’ (#331745), and EU ERC-StG ‘TeraGaN’ (#278428) projects.Peer Reviewe

Improvement of InN layers deposited on Si(111) by RF sputtering using a low-growth-rate InN buffer layer

We investigate the influence of a low-growth-rate InN buffer layer on structural and optical properties of wurtzite nanocrystalline InN films deposited on Si(111) substrates by reactive radio-frequency sputtering. The deposition conditions of the InN buffer layer were optimized in terms of morphological and structural quality, leading to films with surface root-mean-square roughness of ∿ 1 nm under low-growth-rate conditions (60 nm/h). The use of the developed InN buffer layer improves the crystalline quality of the subsequent InN thick films deposited at high growth rate (180 nm/h), as confirmed by the narrowing of X-ray diffraction peaks and the increase of the average grain size of the layers. This improvement of the structural quality is further confirmed by Raman scattering spectroscopy measurements. Room temperature PL emission peaking at ∿ 1.58 eV is observed for InN samples grown with the developed buffer layer. The crystal and optical quality obtained for InN films grown on Si(111) using the low-growth-rate InN buffer layer become comparable to high-quality InN films deposited directly on GaN templates by RF sputtering. © 2011 Elsevier B.V. All rights reserved.Spanish Government Projects, TEC2009-14423-C02-02 and MAT2010-16116, Comunidad de Madrid ProjectS-0505/AMB-0364, and CSIC Project PIE-2009 provided partial financial support.Peer Reviewe