Positron annihilation spectroscopy for the determination of thickness and defect profile in thin semiconductor layers

We present a method, based on positron annihilation spectroscopy, to obtain information on the defect depth profile of layers grown over high-quality substrates. We have applied the method to the case of ZnO layers grown on sapphire, but the method can be very easily generalized to other heterostructures (homostructures) where the positron mean diffusion length is small enough. Applying the method to the ratio of W and S parameters obtained from Doppler broadening measurements, W∕S plots, it is possible to determine the thickness of the layer and the defect profile in the layer, when mainly one defect trapping positron is contributing to positron trapping at the measurement temperature. Indeed, the quality of such characterization is very important for potential technological applications of the layer.Peer reviewe

Positron annihilation lifetime spectroscopy of ZnO bulk samples

In order to gain a further insight into the knowledge of point defects of ZnO, positron annihilation lifetime spectroscopy was performed on bulk samples annealed under different atmospheres. The samples were characterized at temperatures ranging from 10 to 500 K. Due to difficulties in the conventional fitting of the lifetime spectra caused by the low intensity of the defect signals, we have used an alternative method as a solution to overcome these difficulties and resolve all the lifetime components present in the spectra. Two different vacancy-type defects are identified in the samples: Zn vacancy complexes (VZn−X) and vacancy clusters consisting of up to five missing Zn-O pairs. In addition to the vacancies, we observe negative-ion-type defects, which are tentatively attributed to intrinsic defects in the Zn sublattice. The effect of the annealing on the observed defects is discussed. The concentrations of the VZn−X complexes and negative-ion-type defects are in the 0.2–2 ppm range, while the cluster concentrations are 1–2 orders of magnitude lower.Peer reviewe

Positron annihilation lifetime spectroscopy of ZnO bulk samples

In order to gain a further insight into the knowledge of point defects of ZnO, positron annihilation lifetime spectroscopy was performed on bulk samples annealed under different atmospheres. The samples were characterized at temperatures ranging from 10 to 500 K. Due to difficulties in the conventional fitting of the lifetime spectra caused by the low intensity of the defect signals, we have used an alternative method as a solution to overcome these difficulties and resolve all the lifetime components present in the spectra. Two different vacancy-type defects are identified in the samples: Zn vacancy complexes (VZn−X) and vacancy clusters consisting of up to five missing Zn-O pairs. In addition to the vacancies, we observe negative-ion-type defects, which are tentatively attributed to intrinsic defects in the Zn sublattice. The effect of the annealing on the observed defects is discussed. The concentrations of the VZn−X complexes and negative-ion-type defects are in the 0.2–2 ppm range, while the cluster concentrations are 1–2 orders of magnitude lower.Peer reviewe

Influencia del conocimiento previo y de la estructura conceptual de los estudiantes de bup en la resolución de problemas

 The intent of this study was to investigate the influence of both previous knowledge as well as post-instructional conceptual knowledge to foster the achievement in problem-solving. data were collected from 136 BUP students of valencia.</p

Zinc vacancies in the heteroepitaxy of ZnO on sapphire: Influence of the substrate orientation and layer thickness

Positron annihilation spectroscopy has been used to study the vacancy-type defects produced in films grown by metalorganic chemical vapor deposition on different sapphire orientations. Zn vacancies are the defects controlling the positron annihilation spectra at room temperature. Close to the interface (<500nm) their concentration depends on the surface plane of sapphire over which the ZnO film has been grown. The Zn vacancy content in the film decreases with thickness, and above 1μm it is independent of the substrate orientation.Peer reviewe

On the interplay of point defects and Cd in non-polar ZnCdO films

Non-polar ZnCdO films, grown over m- and r-sapphire with a Cd concentration ranging between 0.8% and 5%, have been studied by means of slow positron annihilation spectroscopy (PAS) combined with chemical depth profiling by secondary ion mass spectroscopy and Rutherford back-scattering. Vacancy clusters and Zn vacancies with concentrations up to 10exp17 cm−3 and 10exp18 cm−3, respectively, have been measured inside the films. Secondary ion mass spectroscopy results show that most Cd stays inside the ZnCdO film but the diffused atoms can penetrate up to 1.3 μm inside the ZnO buffer. PAS results give an insight to the structure of the meta-stable ZnCdO above the thermodynamical solubility limit of 2%. A correlation between the concentration of vacancy clusters and Cd has been measured. The concentration of Zn vacancies is one order of magnitude larger than in as-grown non-polar ZnO films and the vacancy cluster are, at least partly, created by the aggregation of smaller Zn vacancy related defects. The Zn vacancy related defects and the vacancy clusters accumulate around the Cd atoms as a way to release the strain induced by the substitutional CdZn in the ZnO crystal.Peer reviewe

Structural and vibrational study of Bi2Se3 under high pressure

The structural and vibrational properties of bismuth selenide (Bi2Se3) have been studied by means of x-ray diffraction and Raman scattering measurements up to 20 and 30 GPa, respectively. The measurements have been complemented with ab initio total-energy and lattice dynamics calculations. Our experimental results evidence a phase transition from the low-pressure rhombohedral (R-3m) phase (B-Bi2Se3) with sixfold coordination for Bi to a monoclinic C2/m structure (B-Bi2Se3) with sevenfold coordination for Bi above 10 GPa. The equation of state and the pressure dependence of the lattice parameters and volume of a and B phases of Bi2Se3 are reported. Furthermore, the presence of a pressure-induced electronic topological phase transition in B-Bi2Se3 is discussed. Raman measurements evidence that Bi2Se3 undergoes two additional phase transitions around 20 and 28 GPa, likely toward a monoclinic C2/c and a disordered body-centered cubic structure with 8-fold and 9- or 10-fold coordination, respectively. These two high-pressure structures are the same as those recently found at high pressures in Bi2Te3 and Sb2Te3. On pressure release, Bi2Se3 reverts to the original rhombohedral phase after considerable hysteresis. Symmetries, frequencies, and pressure coefficients of the Raman and infrared modes in the different phases are reported and discussed.This work was done under financial support from Spanish Ministry of Science and Innovation under Projects No. MAT2007-66129, No. MAT2010-21270-C04-03/04, and No. CSD-2007-00045 and from the Valencian government under Project No. Prometeo/2011-035. It is also supported by the Ministry of Education, Youth and Sports of the Czech Republic Project No. MSM 0021627501

Chiral Symmetry and the Nucleon Structure Functions

The isospin asymmetry of the sea quark distribution as well as the unexpectedly small quark spin fraction of the nucleon are two outstanding discoveries recently made in the physics of deep-inelastic structure functions. We evaluate here the corresponding quark distribution functions within the framework of the chiral quark soliton model, which is an effective quark model of baryons maximally incorporating the most important feature of low energy QCD, i.e. the chiral symmetry and its spontaneous breakdown. It is shown that the model can explain qualitative features of the above-mentioned nucleon structure functions within a single framework, thereby disclosing the importance of chiral symmetry in the physics of high energy deep-inelastic scatterings.Comment: 20pages, LaTex, 5 Postscript figures A numerical error of the original version was corrected. The discussion on the regularization dependence of distribution functions has been added. A comparison with the low energy-scale parametrization of Gloeck, Reya and Vogt has been mad

Preferred growth direction by PbS nanoplatelets preserves perovskite infrared light harvesting for stable, reproducible, and efficient solar cells

Formamidinium-based perovskite solar cells (PSCs) present the maximum theoretical efficiency of the lead perovskite family. However, formamidinium perovskite exhibits significant degradation in air. The surface chemistry of PbS has been used to improve the formamidinium black phase stability. Here, the use of PbS nanoplatelets with (100) preferential crystal orientation is reported, to potentiate the repercussion on the crystal growth of perovskite grains and to improve the stability of the material and consequently of the solar cells. As a result, a vertical growth of perovskite grains, a stable current density of 23 mA cm(-2), and a stable incident photon to current efficiency in the infrared region of the spectrum for 4 months is obtained, one of the best stability achievements for planar PSCs. Moreover, a better reproducibility than the control device, by optimizing the PbS concentration in the perovskite matrix, is achieved. These outcomes validate the synergistic use of PbS nanoplatelets to improve formamidinium long-term stability and performance reproducibility, and pave the way for using metastable perovskite active phases preserving their light harvesting capability

Charge Symmetry Breaking in the Valence Quark Distributions of the Nucleon

Using a quark model, we study the effect of charge symmetry breaking on the valence quark distributions of the nucleon. The effect due to quark mass differences and the Coulomb interaction of the electrically charged quarks is calculated and, in contrast to recent claims, found to be small. In addition, we investigate the effect of charge symmetry breaking in the confining interaction, and in the perturbative evolution equations used to relate the quark model distributions to experiment. We find that both these effects are small, and that the strong charge symmetry breaking effect included in the scalar confining interactions may be distinguishable from that generated by quark mass differences.Comment: 10 pages, LaTEX, 5 Postscript figure