847 research outputs found

    Squeezing based on nondegenerate frequency doubling internal to a realistic laser

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    We investigate theoretically the quantum fluctuations of the fundamental field in the output of a nondegenerate second harmonic generation process occuring inside a laser cavity. Due to the nondegenerate character of the nonlinear medium, a field orthogonal to the laser field is for some operating conditions indepedent of the fluctuations produced by the laser medium. We show that this fact may lead to perfect squeezing for a certain polarization mode of the fundamental field. The experimental feasibility of the system is also discussed.Comment: 6 pages, 5 figure

    Quantum phase gate with a selective interaction

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    We present a proposal for implementing quantum phase gates using selective interactions. We analize selectivity and the possibility to implement these gates in two particular systems, namely, trapped ions and Cavity QED.Comment: Four pages of TEX file and two EPS figures. Submitted for publicatio

    Atomic Hole Doping of Graphene

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    Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of graphene based electronics is the reliable control of the type and density of the charge carriers by external (gate) and internal (doping) means. While gating has been successfully demonstrated for graphene flakes and epitaxial graphene on silicon carbide, the development of reliable chemical doping methods turns out to be a real challenge. In particular hole doping is an unsolved issue. So far it has only been achieved with reactive molecular adsorbates, which are largely incompatible with any device technology. Here we show by angle-resolved photoemission spectroscopy that atomic doping of an epitaxial graphene layer on a silicon carbide substrate with bismuth, antimony or gold presents effective means of p-type doping. Not only is the atomic doping the method of choice for the internal control of the carrier density. In combination with the intrinsic n-type character of epitaxial graphene on SiC, the charge carriers can be tuned from electrons to holes, without affecting the conical band structure

    Measurement of the Positive Muon Lifetime and Determination of the Fermi Constant to Part-per-Million Precision

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    We report a measurement of the positive muon lifetime to a precision of 1.0 parts per million (ppm); it is the most precise particle lifetime ever measured. The experiment used a time-structured, low-energy muon beam and a segmented plastic scintillator array to record more than 2 x 10^{12} decays. Two different stopping target configurations were employed in independent data-taking periods. The combined results give tau_{mu^+}(MuLan) = 2196980.3(2.2) ps, more than 15 times as precise as any previous experiment. The muon lifetime gives the most precise value for the Fermi constant: G_F(MuLan) = 1.1663788 (7) x 10^-5 GeV^-2 (0.6 ppm). It is also used to extract the mu^-p singlet capture rate, which determines the proton's weak induced pseudoscalar coupling g_P.Comment: Accepted for publication in Phys. Rev. Let

    Oxidation Induced Doping of Nanoparticles Revealed by in Situ X-ray Absorption Studies

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    Doping is a well-known approach to modulate the electronic and optical properties of nanoparticles (NPs). However, doping at nanoscale is still very challenging, and the reasons for that are not well understood. We studied the formation and doping process of iron and iron oxide NPs in real time by in situ synchrotron X-ray absorption spectroscopy. Our study revealed that the mass flow of the iron triggered by oxidation is responsible for the internalization of the dopant (molybdenum) adsorbed at the surface of the host iron NPs. The oxidation induced doping allows controlling the doping levels by varying the amount of dopant precursor. Our in situ studies also revealed that the dopant precursor substantially changes the reaction kinetics of formation of iron and iron oxide NPs. Thus, in the presence of dopant precursor we observed significantly faster decomposition rate of iron precursors and substantially higher stability of iron NPs against oxidation. The same doping mechanism and higher stability of host metal NPs against oxidation was observed for cobalt-based systems. Since the internalization of the adsorbed dopant at the surface of the host NPs is driven by the mass transport of the host, this mechanism can be potentially applied to introduce dopants into different oxidized forms of metal and metal alloy NPs providing the extra degree of compositional control in material design.Fil: Kwon, Soon Gu. Argonne National Laboratory; Estados UnidosFil: Chattopadhyay, Soma. Argonne National Laboratory; Estados Unidos. Illinois Institute of Technology; Estados UnidosFil: Koo, Bonil. Argonne National Laboratory; Estados UnidosFil: Dos Santos Claro, Paula Cecilia. Argonne National Laboratory; Estados UnidosFil: Shibata, Tomohiro. Argonne National Laboratory; Estados UnidosFil: Requejo, Felix Gregorio. Consejo Nacional de Investigaciones CientĂ­ficas y TĂ©cnicas. Centro CientĂ­fico TecnolĂłgico Conicet - La Plata. Instituto de Investigaciones FisicoquĂ­micas TeĂłricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones FisicoquĂ­micas TeĂłricas y Aplicadas; ArgentinaFil: Giovanetti, Lisandro Jose. Consejo Nacional de Investigaciones CientĂ­ficas y TĂ©cnicas. Centro CientĂ­fico TecnolĂłgico Conicet - La Plata. Instituto de Investigaciones FisicoquĂ­micas TeĂłricas y Aplicadas. Universidad Nacional de La Plata. Facultad de Ciencias Exactas. Instituto de Investigaciones FisicoquĂ­micas TeĂłricas y Aplicadas; ArgentinaFil: Liu, Yuzi. Argonne National Laboratory; Estados UnidosFil: Johnson, Christopher. Argonne National Laboratory; Estados UnidosFil: Prakapenka, Vitali. University of Chicago; Estados UnidosFil: Lee, Byeongdu. Argonne National Laboratory; Estados UnidosFil: Shevchenko, Elena V.. Argonne National Laboratory; Estados Unido

    Improved Measurement of the Positive Muon Lifetime and Determination of the Fermi Constant

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    The mean life of the positive muon has been measured to a precision of 11 ppm using a low-energy, pulsed muon beam stopped in a ferromagnetic target, which was surrounded by a scintillator detector array. The result, tau_mu = 2.197013(24) us, is in excellent agreement with the previous world average. The new world average tau_mu = 2.197019(21) us determines the Fermi constant G_F = 1.166371(6) x 10^-5 GeV^-2 (5 ppm). Additionally, the precision measurement of the positive muon lifetime is needed to determine the nucleon pseudoscalar coupling g_P.Comment: As published version (PRL, July 2007

    The Majorana experiment: an ultra-low background search for neutrinoless double-beta decay

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    The observation of neutrinoless double-beta decay would resolve the Majorana nature of the neutrino and could provide information on the absolute scale of the neutrino mass. The initial phase of the Majorana experiment, known as the Demonstrator, will house 40 kg of Ge in an ultra-low background shielded environment at the 4850' level of the Sanford Underground Laboratory in Lead, SD. The objective of the Demonstrator is to determine whether a future 1-tonne experiment can achieve a background goal of one count per tonne-year in a narrow region of interest around the 76Ge neutrinoless double-beta decay peak.Comment: Presentation for the Rutherford Centennial Conference on Nuclear Physic
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