299 research outputs found

    Design and Implementation of 2D Convolution on x86/x64 Processors

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    Non-Volatile Memory Characteristics of Submicrometre Hall Structures Fabricated in Epitaxial Ferromagnetic MnAl Films on GaAs

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    Hall-effect structures with submicrometre linewidths (<0.3pm) have been fabricated in ferromagnetic thin films of Mn[sub 0.60]Al[sub 0.40] which are epitaxially grown on a GaAs substrate. The MnAl thin films exhibit a perpendicular remanent magnetisation and an extraordinary Hall effect with square hysteretic behaviour. The presence of two distinct stable readout states demonstrates the potential of using ultrasmall ferromagnetic volumes for electrically addressable, nonvolatile storage of digital information

    The extraordinary Hall effect in coherent epitaxial tau (Mn,Ni)Al thin films on GaAs

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    Ultrathin coherent epitaxial films of ferromagnetic tau(Mn,Ni)0.60Al0.40 have been grown by molecular beam epitaxy on GaAs substrates. X-ray scattering and cross-sectional transmission electron microscopy measurements confirm that the c axis of the tetragonal tau unit cell is aligned normal to the (001) GaAs substrate. Measurements of the extraordinary Hall effect (EHE) show that the films are perpendicularly magnetized, exhibiting EHE resistivities saturating in the range of 3.3-7.1 muOMEGA-cm at room temperature. These values of EHE resistivity correspond to signals as large as +7 and -7 mV for the two magnetic states of the film with a measurement current of 1 mA. Switching between the two magnetic states is found to occur at distinct field values that depend on the previously applied maximum field. These observations suggest that the films are magnetically uniform. As such, tau(Mn,Ni)Al films may be an excellent medium for high-density storage of binary information

    Epitaxial-tau(Mn,Ni)Al/(Al,Ga)As heterostructures: Magnetic and magneto-optic properties

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    Ferromagnetic Perpendicularly magnetized epitaxial thin films of tau (Mn,Ni)AI have been successfully grown on AlAs/GaAs heterostructures by molecular beam epitaxy. We have investigated the polar Kerr rotation and magnetization of tau MnAl and (Mn,Ni) Al as a function of Mn and Ni concentration. The largest polar Kerr rotation and remnant magnetization were obtained for Mn0.5Al0.5 thin films with values of 0.16-degrees and 224 emu/cm3, respectively. We observed that the Kerr rotation and magnetization remained constant with Ni additions up to about 12 at. % and subsequently decreased with further Ni additions. We discuss these results and one possible method of enhancing the Kerr rotation

    A Hierarchical Profiler of Intermediate Representation Code based on LLVM

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    Profiling based techniques have gained much attention on computer architecture and software analysis communities. The target is to rely on one or more profiling tools in order to identify specific code pieces of interest e.g., code pieces that slowdown a given application. The extracted code pieces can be further modified and optimized. In general, the profiling tools can be classified as deterministic, statistical-based, or rely on hardware performance counters. A common characteristic of the available profiling tools is typically based on analyzing or even manipulating (in case of binary instrumentation tools) machine-level code. This approach come with two main drawbacks. First, a lot of information (even GBytes of data) needs to be gathered, stored, post-processed, and visualized. Second, the performed analysis of the gathered data is platform-specific and it is not straightforward to categorize the given applications/program phases/kernels into distinct categories that have the same or almost the same behavior (e.g., the same percentage of computational vs. control instructions). The latter stems from the fact even small changes in the source code of the applications might lead to significantly different machine code implementations. Therefore, even two specific program kernels exhibit the same behavior (e.g., they have the same number of instructions, but with a different ordering), it is very difficult for a machine-code level profiling tool to assess their similarity, simply because the generated machine level code might have significant differences resulting in many missing opportunities for the available profiling tools. To address this issue, in this paper, we present a new profiling tool that is able to operate on the machine independent intermediate representation (IR) level. The profiler (still in development phase) relies on the LLVM API and it is able to hierarchically (at various levels of the call stack) and recursively parse the IR code and extract various useful statistics. We showcase the practicality of our profiler by analyzing a subset of the PolyBench benchmarks assuming (as pointed out by a recent study) that there is a strong correlation of LLVM IR code

    Quenched bond randomness in marginal and non-marginal Ising spin models in 2D

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    We investigate and contrast, via entropic sampling based on the Wang-Landau algorithm, the effects of quenched bond randomness on the critical behavior of two Ising spin models in 2D. The random bond version of the superantiferromagnetic (SAF) square model with nearest- and next-nearest-neighbor competing interactions and the corresponding version of the simple Ising model are studied and their general universality aspects are inspected by a detailed finite-size scaling (FSS) analysis. We find that, the random bond SAF model obeys weak universality, hyperscaling, and exhibits a strong saturating behavior of the specific heat due to the competing nature of interactions. On the other hand, for the random Ising model we encounter some difficulties for a definite discrimination between the two well-known scenarios of the logarithmic corrections versus the weak universality. Yet, a careful FSS analysis of our data favors the field-theoretically predicted logarithmic corrections.Comment: 19 pages, 5 figures, final versio

    Critical behavior of the random-anisotropy model in the strong-anisotropy limit

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    We investigate the nature of the critical behavior of the random-anisotropy Heisenberg model (RAM), which describes a magnetic system with random uniaxial single-site anisotropy, such as some amorphous alloys of rare earths and transition metals. In particular, we consider the strong-anisotropy limit (SRAM), in which the Hamiltonian can be rewritten as the one of an Ising spin-glass model with correlated bond disorder. We perform Monte Carlo simulations of the SRAM on simple cubic L^3 lattices, up to L=30, measuring correlation functions of the replica-replica overlap, which is the order parameter at a glass transition. The corresponding results show critical behavior and finite-size scaling. They provide evidence of a finite-temperature continuous transition with critical exponents ηo=−0.24(4)\eta_o=-0.24(4) and Îœo=2.4(6)\nu_o=2.4(6). These results are close to the corresponding estimates that have been obtained in the usual Ising spin-glass model with uncorrelated bond disorder, suggesting that the two models belong to the same universality class. We also determine the leading correction-to-scaling exponent finding ω=1.0(4)\omega = 1.0(4).Comment: 24 pages, 13 figs, J. Stat. Mech. in pres

    Enhancing global climate policy ambition towards a 1.5 °C stabilization: a short-term multi-model assessment

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    The Paris Agreement is a milestone in international climate policy as it establishes a global mitigation framework towards 2030 and sets the ground for a potential 1.5 °C climate stabilization. To provide useful insights for the 2018 UNFCCC Talanoa facilitative dialogue, we use eight state-of-the-art climate-energy-economy models to assess the effectiveness of the Intended Nationally Determined Contributions (INDCs) in meeting high probability 1.5 and 2 °C stabilization goals. We estimate that the implementation of conditional INDCs in 2030 leaves an emissions gap from least cost 2 °C and 1.5 °C pathways for year 2030 equal to 15.6 (9.0–20.3) and 24.6 (18.5–29.0) GtCO2eq respectively. The immediate transition to a more efficient and low-carbon energy system is key to achieving the Paris goals. The decarbonization of the power supply sector delivers half of total CO2 emission reductions in all scenarios, primarily through high penetration of renewables and energy efficiency improvements. In combination with an increased electrification of final energy demand, low-carbon power supply is the main short-term abatement option. We find that the global macroeconomic cost of mitigation efforts does not reduce the 2020–2030 annual GDP growth rates in any model more than 0.1 percentage points in the INDC or 0.3 and 0.5 in the 2 °C and 1.5 °C scenarios respectively even without accounting for potential co-benefits and avoided climate damages. Accordingly, the median GDP reductions across all models in 2030 are 0.4%, 1.2% and 3.3% of reference GDP for each respective scenario. Costs go up with increasing mitigation efforts but a fragmented action, as implied by the INDCs, results in higher costs per unit of abated emissions. On a regional level, the cost distribution is different across scenarios while fossil fuel exporters see the highest GDP reductions in all INDC, 2 °C and 1.5 °C scenarios

    A combined experimental and theoretical investigation of oxidation catalysis by cis-[VIV(O)(Cl/F)(N4)]+ species mimicking the active center of metal-enzymes

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    Reaction of VIVOCl2 with the nonplanar tetradentate N4 bis-quinoline ligands yielded four oxidovanadium(IV) compounds of the general formula cis-[VIV(O)(Cl)(N4)]Cl. Sequential treatment of the two nonmethylated N4 oxidovanadium(IV) compounds with KF and NaClO4 resulted in the isolation of the species with the general formula cis-[VIV(O)(F)(N4)]ClO4. In marked contrast, the methylated N4 oxidovanadium(IV) derivatives are inert toward KF reaction due to steric hindrance, as evidenced by EPR and theoretical calculations. The oxidovanadium(IV) compounds were characterized by single-crystal X-ray structure analysis, cw EPR spectroscopy, and magnetic susceptibility. The crystallographic characterization showed that the vanadium compounds have a highly distorted octahedral coordination environment and the d(VIV–F) = 1.834(1) Å is the shortest to be reported for (oxido)(fluorido)vanadium(IV) compounds. The experimental EPR parameters of the VIVO2+ species deviate from the ones calculated by the empirical additivity relationship and can be attributed to the axial donor atom trans to the oxido group and the distorted VIV coordination environment. The vanadium compounds act as catalysts toward alkane oxidation by aqueous H2O2 with moderate ΀ΟΝ up to 293 and product yields of up to 29% (based on alkane); the vanadium(IV) is oxidized to vanadium(V), and the ligands remain bound to the vanadium atom during the catalysis, as determined by 51V and 1H NMR spectroscopies. The cw X-band EPR studies proved that the mechanism of the catalytic reaction is through hydroxyl radicals. The chloride substitution reaction in the cis-[VIV(O)(Cl)(N4)]+ species by fluoride and the mechanism of the alkane oxidation were studied by DFT calculations
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